TWI598683B - 含氟醇之分子光阻材料及其使用製程 - Google Patents
含氟醇之分子光阻材料及其使用製程 Download PDFInfo
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- TWI598683B TWI598683B TW100141116A TW100141116A TWI598683B TW I598683 B TWI598683 B TW I598683B TW 100141116 A TW100141116 A TW 100141116A TW 100141116 A TW100141116 A TW 100141116A TW I598683 B TWI598683 B TW I598683B
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- Prior art keywords
- group
- hydrogen
- substituted
- alkyl
- unsubstituted
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- 229920002120 photoresistant polymer Polymers 0.000 title claims description 61
- 238000000034 method Methods 0.000 title claims description 18
- 230000008569 process Effects 0.000 title claims description 11
- AQYSYJUIMQTRMV-UHFFFAOYSA-N hypofluorous acid Chemical compound FO AQYSYJUIMQTRMV-UHFFFAOYSA-N 0.000 title claims description 9
- 239000000463 material Substances 0.000 title description 16
- -1 wherein R 5 Chemical compound 0.000 claims description 59
- 239000000203 mixture Substances 0.000 claims description 35
- 125000000217 alkyl group Chemical group 0.000 claims description 34
- 239000002253 acid Chemical group 0.000 claims description 32
- 125000003118 aryl group Chemical group 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 27
- 239000001257 hydrogen Substances 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 20
- 239000002904 solvent Substances 0.000 claims description 20
- 229910052731 fluorine Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 16
- GQPLZGRPYWLBPW-UHFFFAOYSA-N calix[4]arene Chemical compound C1C(C=2)=CC=CC=2CC(C=2)=CC=CC=2CC(C=2)=CC=CC=2CC2=CC=CC1=C2 GQPLZGRPYWLBPW-UHFFFAOYSA-N 0.000 claims description 16
- 239000011737 fluorine Substances 0.000 claims description 16
- 125000003545 alkoxy group Chemical group 0.000 claims description 15
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 15
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 14
- 125000000524 functional group Chemical group 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 125000003342 alkenyl group Chemical group 0.000 claims description 9
- 125000000304 alkynyl group Chemical group 0.000 claims description 9
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 239000003431 cross linking reagent Substances 0.000 claims description 8
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 6
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 125000002723 alicyclic group Chemical group 0.000 claims description 5
- 125000002947 alkylene group Chemical group 0.000 claims description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 5
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 5
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 5
- 239000004014 plasticizer Substances 0.000 claims description 5
- 125000003158 alcohol group Chemical group 0.000 claims description 4
- 125000004104 aryloxy group Chemical group 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 4
- 125000004122 cyclic group Chemical group 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 4
- 125000001072 heteroaryl group Chemical group 0.000 claims description 4
- 125000005842 heteroatom Chemical group 0.000 claims description 4
- 239000000049 pigment Substances 0.000 claims description 4
- 239000003755 preservative agent Substances 0.000 claims description 4
- 239000002318 adhesion promoter Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 239000003112 inhibitor Substances 0.000 claims description 3
- 239000003607 modifier Substances 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims 6
- 230000002335 preservative effect Effects 0.000 claims 2
- 241001164374 Calyx Species 0.000 claims 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 48
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 20
- 125000004432 carbon atom Chemical group C* 0.000 description 9
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 239000003999 initiator Substances 0.000 description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 5
- 150000002466 imines Chemical class 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-WFGJKAKNSA-N Dimethyl sulfoxide Chemical compound [2H]C([2H])([2H])S(=O)C([2H])([2H])[2H] IAZDPXIOMUYVGZ-WFGJKAKNSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 150000001299 aldehydes Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- OZLBDYMWFAHSOQ-UHFFFAOYSA-N diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1 OZLBDYMWFAHSOQ-UHFFFAOYSA-N 0.000 description 4
- 229940116333 ethyl lactate Drugs 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 125000006239 protecting group Chemical group 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 3
- VTJUKNSKBAOEHE-UHFFFAOYSA-N calixarene Chemical compound COC(=O)COC1=C(CC=2C(=C(CC=3C(=C(C4)C=C(C=3)C(C)(C)C)OCC(=O)OC)C=C(C=2)C(C)(C)C)OCC(=O)OC)C=C(C(C)(C)C)C=C1CC1=C(OCC(=O)OC)C4=CC(C(C)(C)C)=C1 VTJUKNSKBAOEHE-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 150000003384 small molecules Chemical class 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 3
- 239000012953 triphenylsulfonium Substances 0.000 description 3
- JGTNAGYHADQMCM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-M 0.000 description 2
- ACEKLXZRZOWKRY-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,5,5,5-undecafluoropentane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F ACEKLXZRZOWKRY-UHFFFAOYSA-M 0.000 description 2
- YFSUTJLHUFNCNZ-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F YFSUTJLHUFNCNZ-UHFFFAOYSA-M 0.000 description 2
- 238000005160 1H NMR spectroscopy Methods 0.000 description 2
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 239000004971 Cross linker Substances 0.000 description 2
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- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
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- YVGKLVZOQWYWTI-UHFFFAOYSA-N calixresorc[4]arene Chemical compound C1C(C(=CC=2O)O)=CC=2CC(C(=CC=2O)O)=CC=2CC(=C2)C(O)=CC(O)=C2CC2=CC1=C(O)C=C2O YVGKLVZOQWYWTI-UHFFFAOYSA-N 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
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- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 2
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- 125000001046 glycoluril group Chemical class [H]C12N(*)C(=O)N(*)C1([H])N(*)C(=O)N2* 0.000 description 2
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- DYHSDKLCOJIUFX-UHFFFAOYSA-N tert-butoxycarbonyl anhydride Chemical compound CC(C)(C)OC(=O)OC(=O)OC(C)(C)C DYHSDKLCOJIUFX-UHFFFAOYSA-N 0.000 description 2
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- XGQJGMGAMHFMAO-UHFFFAOYSA-N 1,3,4,6-tetrakis(methoxymethyl)-3a,6a-dihydroimidazo[4,5-d]imidazole-2,5-dione Chemical compound COCN1C(=O)N(COC)C2C1N(COC)C(=O)N2COC XGQJGMGAMHFMAO-UHFFFAOYSA-N 0.000 description 1
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- YNNCOUORICNEOU-UHFFFAOYSA-N 3,3-dimethyldodecane Chemical compound CCCCCCCCCC(C)(C)CC YNNCOUORICNEOU-UHFFFAOYSA-N 0.000 description 1
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- SQKZZFHVQCSUHZ-UHFFFAOYSA-N 5-methyltetradecane Chemical compound CCCCCCCCCC(C)CCCC SQKZZFHVQCSUHZ-UHFFFAOYSA-N 0.000 description 1
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- C—CHEMISTRY; METALLURGY
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- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
- C07C39/24—Halogenated derivatives
- C07C39/42—Halogenated derivatives containing six-membered aromatic rings and other rings
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- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- G03F7/004—Photosensitive materials
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/92—Systems containing at least three condensed rings with a condensed ring system consisting of at least two mutually uncondensed aromatic ring systems, linked by an annular structure formed by carbon chains on non-adjacent positions of the aromatic system, e.g. cyclophanes
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/971,292 US8530136B2 (en) | 2010-12-17 | 2010-12-17 | Fluoroalcohol containing molecular photoresist materials and processes of use |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201234104A TW201234104A (en) | 2012-08-16 |
| TWI598683B true TWI598683B (zh) | 2017-09-11 |
Family
ID=45047757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100141116A TWI598683B (zh) | 2010-12-17 | 2011-11-10 | 含氟醇之分子光阻材料及其使用製程 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8530136B2 (OSRAM) |
| EP (1) | EP2651865B1 (OSRAM) |
| JP (1) | JP5796237B2 (OSRAM) |
| KR (1) | KR101531773B1 (OSRAM) |
| CN (1) | CN103261137A (OSRAM) |
| TW (1) | TWI598683B (OSRAM) |
| WO (1) | WO2012079919A1 (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2487148B1 (en) * | 2009-10-06 | 2014-12-31 | Mitsubishi Gas Chemical Company, Inc. | Cyclic compound, method for producing same, radiation sensitive composition, and method for forming resist pattern |
| EP2505576B1 (en) * | 2009-11-27 | 2019-04-24 | Mitsubishi Gas Chemical Company, Inc. | Cyclic compound, process for production thereof, radiation-sensitive composition, and resist pattern formation method |
| CN103752208A (zh) * | 2014-01-28 | 2014-04-30 | 扬州大学 | 一种起泡剂和稳泡剂及其合成方法 |
| CN107533288B (zh) | 2015-05-28 | 2021-10-19 | 英特尔公司 | 用于解耦合光致抗蚀剂的扩散和溶解性切换机制的手段 |
| US11487204B2 (en) * | 2017-07-27 | 2022-11-01 | Dic Corporation | Resist material |
| CN108363275A (zh) * | 2018-02-07 | 2018-08-03 | 江苏艾森半导体材料股份有限公司 | 一种用于oled阵列制造的正性光刻胶 |
| CN108897192B (zh) * | 2018-04-19 | 2022-04-05 | 中科院广州化学有限公司南雄材料生产基地 | 一种巯基-烯纳米压印光刻胶及其使用方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4189323A (en) | 1977-04-25 | 1980-02-19 | Hoechst Aktiengesellschaft | Radiation-sensitive copying composition |
| EP0058638B1 (de) | 1981-02-13 | 1985-08-28 | Ciba-Geigy Ag | Härtbare Zusammensetzung auf Basis eines säurehärtbaren Harzes und Verfahren zu dessen Härtung |
| JPH01293339A (ja) | 1988-05-23 | 1989-11-27 | Tosoh Corp | フォトレジスト組成物 |
| JP3116751B2 (ja) | 1993-12-03 | 2000-12-11 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
| JP3486341B2 (ja) | 1997-09-18 | 2004-01-13 | 株式会社東芝 | 感光性組成物およびそれを用いたパターン形成法 |
| JPH11217385A (ja) * | 1998-01-30 | 1999-08-10 | Nihon Schering Kk | 含フッ素ポルフィリン錯体およびそれを含有する造影剤 |
| US6093517A (en) | 1998-07-31 | 2000-07-25 | International Business Machines Corporation | Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions |
| EP1345080A3 (en) | 2002-03-15 | 2004-02-04 | Toyo Gosei Kogyo Co., Ltd. | 1,2-Naphthoquinone-2-Diazidesulfonate Ester photosensitive agent, method for producing the photosensitive agent, and photoresist composition |
| JP2006208765A (ja) * | 2005-01-28 | 2006-08-10 | Matsushita Electric Ind Co Ltd | レジスト材料及びそれを用いたパターン形成方法 |
| CN101218202A (zh) | 2005-06-01 | 2008-07-09 | 木下博雄 | 杯间苯二酚芳烃化合物以及由其构成的光致抗蚀剂基材及其组合物 |
| US7781157B2 (en) | 2006-07-28 | 2010-08-24 | International Business Machines Corporation | Method for using compositions containing fluorocarbinols in lithographic processes |
| KR101588903B1 (ko) | 2006-11-02 | 2016-01-26 | 미츠비시 가스 가가쿠 가부시키가이샤 | 감방사선성 조성물 |
| WO2009143357A2 (en) | 2008-05-23 | 2009-11-26 | Cornell University | Orthogonal processing of organic materials used in electronic and electrical devices |
-
2010
- 2010-12-17 US US12/971,292 patent/US8530136B2/en not_active Expired - Fee Related
-
2011
- 2011-11-10 TW TW100141116A patent/TWI598683B/zh active
- 2011-11-21 EP EP11788423.9A patent/EP2651865B1/en not_active Not-in-force
- 2011-11-21 WO PCT/EP2011/070579 patent/WO2012079919A1/en not_active Ceased
- 2011-11-21 JP JP2013543609A patent/JP5796237B2/ja not_active Expired - Fee Related
- 2011-11-21 CN CN2011800601309A patent/CN103261137A/zh active Pending
- 2011-11-21 KR KR1020137012373A patent/KR101531773B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP5796237B2 (ja) | 2015-10-21 |
| EP2651865A1 (en) | 2013-10-23 |
| US8530136B2 (en) | 2013-09-10 |
| KR20130122634A (ko) | 2013-11-07 |
| JP2014502646A (ja) | 2014-02-03 |
| WO2012079919A1 (en) | 2012-06-21 |
| EP2651865B1 (en) | 2017-07-12 |
| KR101531773B1 (ko) | 2015-06-25 |
| TW201234104A (en) | 2012-08-16 |
| US20120156611A1 (en) | 2012-06-21 |
| CN103261137A (zh) | 2013-08-21 |
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