TWI597174B - Translucent conductive film, its manufacturing method, and its use - Google Patents
Translucent conductive film, its manufacturing method, and its use Download PDFInfo
- Publication number
- TWI597174B TWI597174B TW102128067A TW102128067A TWI597174B TW I597174 B TWI597174 B TW I597174B TW 102128067 A TW102128067 A TW 102128067A TW 102128067 A TW102128067 A TW 102128067A TW I597174 B TWI597174 B TW I597174B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- transmitting conductive
- layer
- conductive film
- transmitting
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000010408 film Substances 0.000 claims description 142
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 47
- 229910003437 indium oxide Inorganic materials 0.000 claims description 44
- 238000005259 measurement Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 33
- 239000002952 polymeric resin Substances 0.000 claims description 25
- 229920003002 synthetic resin Polymers 0.000 claims description 25
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 15
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 15
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000002233 thin-film X-ray diffraction Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 9
- -1 polyethylene terephthalate Polymers 0.000 claims description 8
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 7
- 229920000515 polycarbonate Polymers 0.000 claims description 6
- 239000004417 polycarbonate Substances 0.000 claims description 6
- 229920000728 polyester Polymers 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 257
- 238000011156 evaluation Methods 0.000 description 30
- 229910004298 SiO 2 Inorganic materials 0.000 description 21
- 238000004544 sputter deposition Methods 0.000 description 19
- 239000000523 sample Substances 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 230000003746 surface roughness Effects 0.000 description 13
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 13
- 229910001887 tin oxide Inorganic materials 0.000 description 11
- 238000002441 X-ray diffraction Methods 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 229910001868 water Inorganic materials 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910016523 CuKa Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011157 data evaluation Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910000487 osmium oxide Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Laminated Bodies (AREA)
- Non-Insulated Conductors (AREA)
- Physical Vapour Deposition (AREA)
- Position Input By Displaying (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012174379 | 2012-08-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201420358A TW201420358A (zh) | 2014-06-01 |
| TWI597174B true TWI597174B (zh) | 2017-09-01 |
Family
ID=50068045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102128067A TWI597174B (zh) | 2012-08-06 | 2013-08-06 | Translucent conductive film, its manufacturing method, and its use |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP5693749B2 (ko) |
| KR (1) | KR102078996B1 (ko) |
| CN (1) | CN104428844B (ko) |
| TW (1) | TWI597174B (ko) |
| WO (1) | WO2014024819A1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6211557B2 (ja) * | 2014-04-30 | 2017-10-11 | 日東電工株式会社 | 透明導電性フィルム及びその製造方法 |
| JP6261540B2 (ja) * | 2014-04-30 | 2018-01-17 | 日東電工株式会社 | 透明導電性フィルム及びその製造方法 |
| CN106460153B (zh) * | 2014-04-30 | 2019-05-10 | 日东电工株式会社 | 透明导电性膜及其制造方法 |
| EP3413100B1 (en) | 2016-09-27 | 2020-11-04 | LG Chem, Ltd. | Antireflection film |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH039323A (ja) * | 1989-06-07 | 1991-01-17 | Teijin Ltd | 液晶表示パネル用電極基板 |
| JP2602390B2 (ja) * | 1992-07-03 | 1997-04-23 | 住友金属鉱山株式会社 | 高密度ｉｔｏ焼結体及びその製造方法 |
| JP2000129427A (ja) | 1998-10-20 | 2000-05-09 | Teijin Ltd | 透明導電積層体の製造方法 |
| JP2000238178A (ja) * | 1999-02-24 | 2000-09-05 | Teijin Ltd | 透明導電積層体 |
| JP2002014364A (ja) * | 2000-06-29 | 2002-01-18 | Minolta Co Ltd | 液晶表示素子及びその製造方法 |
| JP4269587B2 (ja) | 2002-07-12 | 2009-05-27 | 凸版印刷株式会社 | 導電性積層体及びその製造方法 |
| CN1503604A (zh) * | 2002-11-22 | 2004-06-09 | 三井化学株式会社 | 透明导电性薄膜及其制造方法和使用它的电发光元件 |
| JP2006310070A (ja) * | 2005-04-28 | 2006-11-09 | Dainippon Printing Co Ltd | フレキシブル透明電極基板および有機ｅｌディスプレイデバイス |
| JP2010168647A (ja) * | 2008-12-24 | 2010-08-05 | Central Glass Co Ltd | 導電性薄膜の前駆薄膜及び該薄膜から得られる透明導電性薄膜 |
| JP5662933B2 (ja) * | 2009-06-30 | 2015-02-04 | 出光興産株式会社 | 透明導電膜 |
| JP5492479B2 (ja) * | 2009-07-10 | 2014-05-14 | ジオマテック株式会社 | 透明導電膜の製造方法 |
| JP2011037679A (ja) * | 2009-08-13 | 2011-02-24 | Tosoh Corp | 複合酸化物焼結体、スパッタリングターゲット、複合酸化物非晶質膜及びその製造方法、並びに、複合酸化物結晶質膜及びその製造方法 |
| JP5618229B2 (ja) * | 2009-12-18 | 2014-11-05 | 国立大学法人東北大学 | Ｉｔｏ粉末、ｉｔｏ粒子の製造方法、透明導電材用塗料並びに透明導電膜 |
| JP5652079B2 (ja) * | 2010-09-17 | 2015-01-14 | 凸版印刷株式会社 | 透明導電性積層体及びその製造方法 |
| JP5739742B2 (ja) * | 2010-11-04 | 2015-06-24 | 日東電工株式会社 | 透明導電性フィルムおよびタッチパネル |
| WO2012073964A1 (ja) * | 2010-11-30 | 2012-06-07 | 日東電工株式会社 | タッチ入力機能を有する表示パネル装置 |
-
2013
- 2013-08-05 KR KR1020157002111A patent/KR102078996B1/ko active IP Right Grant
- 2013-08-05 JP JP2013547039A patent/JP5693749B2/ja active Active
- 2013-08-05 CN CN201380036425.1A patent/CN104428844B/zh active Active
- 2013-08-05 WO PCT/JP2013/071108 patent/WO2014024819A1/ja active Application Filing
- 2013-08-06 TW TW102128067A patent/TWI597174B/zh not_active IP Right Cessation
-
2014
- 2014-09-24 JP JP2014193847A patent/JP6010078B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104428844A (zh) | 2015-03-18 |
| WO2014024819A1 (ja) | 2014-02-13 |
| JPWO2014024819A1 (ja) | 2016-07-25 |
| KR102078996B1 (ko) | 2020-02-19 |
| TW201420358A (zh) | 2014-06-01 |
| CN104428844B (zh) | 2016-04-27 |
| JP6010078B2 (ja) | 2016-10-19 |
| KR20150042780A (ko) | 2015-04-21 |
| JP2015065169A (ja) | 2015-04-09 |
| JP5693749B2 (ja) | 2015-04-01 |
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| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |