TWI594437B - Thin film transistor array and video display device - Google Patents

Thin film transistor array and video display device Download PDF

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Publication number
TWI594437B
TWI594437B TW103110807A TW103110807A TWI594437B TW I594437 B TWI594437 B TW I594437B TW 103110807 A TW103110807 A TW 103110807A TW 103110807 A TW103110807 A TW 103110807A TW I594437 B TWI594437 B TW I594437B
Authority
TW
Taiwan
Prior art keywords
film transistor
thin film
transistor array
printing method
protective layer
Prior art date
Application number
TW103110807A
Other languages
English (en)
Chinese (zh)
Other versions
TW201448233A (zh
Inventor
Yukari Miyairi
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Publication of TW201448233A publication Critical patent/TW201448233A/zh
Application granted granted Critical
Publication of TWI594437B publication Critical patent/TWI594437B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
TW103110807A 2013-03-27 2014-03-24 Thin film transistor array and video display device TWI594437B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013066151A JP6123413B2 (ja) 2013-03-27 2013-03-27 薄膜トランジスタアレイおよび画像表示装置

Publications (2)

Publication Number Publication Date
TW201448233A TW201448233A (zh) 2014-12-16
TWI594437B true TWI594437B (zh) 2017-08-01

Family

ID=51623019

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103110807A TWI594437B (zh) 2013-03-27 2014-03-24 Thin film transistor array and video display device

Country Status (3)

Country Link
JP (1) JP6123413B2 (ja)
TW (1) TWI594437B (ja)
WO (1) WO2014155998A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6537960B2 (ja) 2015-12-01 2019-07-03 日本航空電子工業株式会社 絶縁層の形成方法、電子デバイスの生産方法及び電子デバイス

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020127857A1 (en) * 2001-03-08 2002-09-12 Hiroyuki Ohgami Active matrix substrate and method for producing the same
TW200603408A (en) * 2004-02-05 2006-01-16 Samsung Electronics Co Ltd TFT array substrate, method for manufacturing the same, and liquid crystal display having the same
US20100201932A1 (en) * 2009-02-09 2010-08-12 Hitachi Displays, Ltd. Liquid crystal display device
TW201142955A (en) * 2010-03-30 2011-12-01 Toppan Printing Co Ltd Method for manufacturing thin film transistor, thin film transistor and image display device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4570278B2 (ja) * 2000-08-28 2010-10-27 シャープ株式会社 アクティブマトリクス基板
JP5286826B2 (ja) * 2007-03-28 2013-09-11 凸版印刷株式会社 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、およびアクティブマトリスクディスプレイ
JP5286691B2 (ja) * 2007-05-14 2013-09-11 三菱電機株式会社 フォトセンサー
JP5187363B2 (ja) * 2010-08-24 2013-04-24 株式会社Ｊｖｃケンウッド 液晶表示装置
WO2013073495A1 (ja) * 2011-11-18 2013-05-23 シャープ株式会社 アクティブマトリクス基板、液晶表示装置およびアクティブマトリクス基板の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020127857A1 (en) * 2001-03-08 2002-09-12 Hiroyuki Ohgami Active matrix substrate and method for producing the same
TW200603408A (en) * 2004-02-05 2006-01-16 Samsung Electronics Co Ltd TFT array substrate, method for manufacturing the same, and liquid crystal display having the same
US20100201932A1 (en) * 2009-02-09 2010-08-12 Hitachi Displays, Ltd. Liquid crystal display device
TW201142955A (en) * 2010-03-30 2011-12-01 Toppan Printing Co Ltd Method for manufacturing thin film transistor, thin film transistor and image display device

Also Published As

Publication number Publication date
WO2014155998A1 (ja) 2014-10-02
JP6123413B2 (ja) 2017-05-10
TW201448233A (zh) 2014-12-16
JP2014191169A (ja) 2014-10-06

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