TWI655678B - Thin film transistor array and image display device - Google Patents
Thin film transistor array and image display device Download PDFInfo
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- TWI655678B TWI655678B TW103132707A TW103132707A TWI655678B TW I655678 B TWI655678 B TW I655678B TW 103132707 A TW103132707 A TW 103132707A TW 103132707 A TW103132707 A TW 103132707A TW I655678 B TWI655678 B TW I655678B
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- electrode
- insulating film
- interlayer insulating
- thin film
- transistor array
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Abstract
本發明係提供不需在層間絕緣膜的形成上使用光微影而層間絕緣膜缺陷少的薄膜電晶體陣列。薄膜電晶體陣列係至少具備絕緣基板10、閘極電極11、閘極絕緣膜12、源極電極13B、汲極電極14、半導體層15、覆蓋半導體層15的保護層16、畫素電極18、和形成在汲極電極14與畫素電極18之間的層間絕緣膜17。層間絕緣膜17係有機膜、或是有機和無機的混合膜,為了將畫素電極18連接於汲極電極14,層間絕緣膜17係在形成有汲極電極14之部位的一部分具有通路孔(via hole)40,汲極電極14具有位於通路孔40內而在電極材形成有開口的開口部,在通路孔40內的汲極電極14上存在硫醇基。
Description
本發明係關於薄膜電晶體陣列、及影像顯示裝置。
近年來,從可撓化、輕量化、低成本化等觀點而言,已有使用了能用印刷法製造的有機半導體的薄膜電晶體的研究在熱烈地進行,在有機EL或電子紙等的驅動電路或電子標籤等的應用受到期待。
薄膜電晶體係積層有導電體、絕緣體、及半導體等而成者。薄膜電晶體陣列係根據構造或用途設置層間絕緣膜,並透過設置在層間絕緣膜的通路孔(via hole),獲得在上部的導電體與下部的導電體之間電性的連接。
就層間絕緣膜而言,廣泛使用以電漿CVD形成無機膜的氮化矽或氧化矽的膜,在利用光阻形成所需的開口部後,利用乾式蝕刻形成通路孔的方法。又,也有使用感光性樹脂而形成的方法。在這些方法,由於在通路孔的形成上使用光微影,因此對於利用以低成本為目標的印刷法的薄膜電晶體陣列的製造的嘗試,產能(throughput)或成本成為問題。
相對於此,專利文獻1記載了用印刷法形成層間絕緣膜的方法。此方法,係在閘極絕緣膜成膜後,藉由在形成通路孔的部分利用噴墨法塗布溶劑而溶解絕緣膜,來形成通路孔。於在通路孔部露出的導電體表面,利用噴墨法塗布疏液墨而疏液化。然後,藉由利用噴墨法在基板整面印刷前驅物樹脂並加以硬化,來形成層間絕緣膜。
又,專利文獻2所記載的方法,係在形成閘極絕緣膜後,藉由在形成通路孔的部分利用噴墨法塗布溶劑而溶解絕緣膜,來形成通路孔。由於在通路孔部露出的導電體係面積比開口部還小,因此利用噴墨法在導電體表面塗布疏液墨而疏液化。然後,藉由利用噴墨法在基板整面印刷前驅物樹脂並加以硬化,來形成層間絕緣膜。
專利文獻1 日本特開2012-64844號公報
專利文獻2 日本特開2012-204657號公報
然而,專利文獻1記載的方法,由於係在第一層間絕緣膜成膜後塗布溶劑而進行通路孔的開孔,因此有容易在通路孔部殘留第一層間絕緣膜的殘渣,畫素電極和汲極電極的導通變得不充分這種問題。
又,專利文獻2記載的方法,係將通路孔部的汲極電極預先形成為比第一層間絕緣膜的通路孔尺寸還小,但由於是利用真空成膜和光微影的加工,因此相較於印刷法,在產能或成本方面問題大。
因此,本發明係鑑於上述問題而完成者,目的在於提供不需在層間絕緣膜的形成上使用光微影而層間絕緣膜缺陷少的薄膜電晶體陣列及影像顯示裝置。
本發明係關於有鑑於上述問題的通路孔的構造,藉由在層間絕緣膜的汲極電極部分預先打開開口,在那裡用噴墨法塗布疏液處理墨,來只賦予汲極電極的通路孔部疏液性,藉此提供可形成利用印刷法的層間絕緣膜之構造及製造方法。
本發明的一態樣的薄膜電晶體陣列,係一種薄膜電晶體陣列,其係至少具備絕緣基板、閘極電極、閘極絕緣膜、源極電極、汲極電極、半導體層、覆蓋半導體層的保護層、畫素電極、和形成在汲極電極與畫素電極之間的層間絕緣膜的薄膜電晶體陣列,其中層間絕緣膜係有機膜、或是有機和無機的混合膜,為了將畫素電極連接於汲極電極,層間絕緣膜係在形成有汲極電極之部位的一部分具有通路孔,汲極電極具有位於通路孔內而在電極材形成有開口的開口部,在通路孔內的汲極電極上存在硫醇基。
又,在上述薄膜電晶體陣列中,通路孔的開口端可以存在於汲極電極的端部、或是汲極電極上。
又,在上述薄膜電晶體陣列中,層間絕緣膜的厚度可以是0.5μm以上5μm以下。
又,在上述薄膜電晶體陣列中,層間絕緣膜可以利用噴墨印刷法、網版印刷法、或是凹版印刷法形成。
又,在上述薄膜電晶體陣列中,半導體層可以是有機半導體層。
又,在上述薄膜電晶體陣列中,絕緣基板可以是塑膠基板。
又,本發明的一態樣的影像顯示裝置係包含上述薄膜電晶體、和影像顯示媒體的影像顯示裝置。
又,在上述影像顯示裝置中,上述影像顯示媒體可以是利用電泳方式者。
根據本發明,便能提供不需在層間絕緣膜的形成上使用光微影而層間絕緣膜缺陷少的薄膜電晶體陣列及影像顯示裝置。
10‧‧‧塑膠基板
11‧‧‧閘極電極
12‧‧‧閘極絕緣膜
13A‧‧‧源極電極
13B‧‧‧源極電極
14‧‧‧汲極電極
15‧‧‧半導體層
16‧‧‧保護層
17‧‧‧層間絕緣膜
18‧‧‧畫素電極
19‧‧‧電容電極
20‧‧‧電泳媒體
21‧‧‧噴墨頭
22‧‧‧疏液處理墨
31‧‧‧第一層間絕緣膜
32‧‧‧第二層間絕緣膜
40‧‧‧通路孔
50‧‧‧薄膜電晶體陣列
51‧‧‧薄膜電晶體陣列
52‧‧‧薄膜電晶體陣列
第1圖係顯示本發明的實施形態的薄膜電晶體陣列的構造的平面及剖面圖。
第2圖係顯示實施例1的薄膜電晶體陣列的構造的平面及剖面圖。
第3圖係顯示實施例1的汲極電極的平面及剖面圖。
第4圖(a)~(e)係顯示實施例1的薄膜電晶體陣列的製造方法中的從疏液處理到層間絕緣膜的形成為止的步驟的剖面圖。
第5圖係顯示比較例1的薄膜電晶體陣列的構造的平面圖及剖面圖。
針對本發明的實施形態,參照圖式加以說明。以下,參照的圖式係為了容易瞭解說明而沒有正確地按比例描繪。又,在實施形態中,同一構成要素係賦予同一元件符號。
本實施形態的薄膜電晶體陣列50、51係至少具備絕緣基板10、閘極電極11、閘極絕緣膜12、源極電極13B、汲極電極14、半導體層15、覆蓋半導體層15的保護層16、畫素電極18、和形成在汲極電極14與畫素電極18之間的層間絕緣膜17。閘極電極11係由閘極絕緣膜12被覆。層間絕緣膜17係有機膜、或是有機和無機的混合膜。為了將畫素電極18連接於汲極電極14,層間絕緣膜17係在形成有汲極電極14之部位的一部分具有通路孔40。於通路孔40埋設有導電材。汲極電極14具有位於通路孔40內而在電極材形成有開口的開口部,在通路孔40內的汲極電極14上存在硫醇基或是二硫醚基。例如,通路孔40的開口端係存在於汲極電極14的端部、或是汲極電極14上。例如,層間絕緣膜17的厚度係0.5μm以上5μm以下。例如,層間絕緣膜17
係利用噴墨印刷法、網版印刷法、或是凹版印刷法形成。例如,半導體層15係有機半導體層。例如,絕緣基板10係塑膠基板。
又,本實施形態的影像顯示裝置係具備本實施形態的薄膜電晶體陣列50、51、和影像顯示媒體(例如,影像顯示面板)。例如,影像顯示媒體係利用電泳方式者。
又,當製造薄膜電晶體陣列50、51時,係預先在汲極電極14之中的通路孔形成預定部打開開口,在那裡用噴墨法塗布疏液處理墨。只在通路孔形成預定部的汲極電極14形成疏液處理墨的膜。藉此,只有汲極電極14上的所需的區域成為疏液性,以印刷法成膜的層間絕緣膜17係選擇性地未塗布在通路孔形成預定部的汲極電極14。藉此,能以印刷法在層間絕緣膜17形成通路孔40。
具體而言,在第1圖,顯示本發明的實施形態的薄膜電晶體陣列50的構成的一例。在第1圖,於上側記載平面圖,於下側記載剖面圖。這點在第2圖及第5圖也是相同的。
薄膜電晶體陣列50,係在塑膠基板10(絕緣基板)上,具備閘極電極11、電容電極19、閘極絕緣膜12、源極電極13B、汲極電極14、半導體層15、保護層16、層間絕緣膜17、及畫素電極18(上部畫素電極)。源極電極13B及汲極電極14係形成在閘極絕緣膜12上,連接於半導體層15。在薄膜電晶體陣列50,保護層16係包含有機絕緣材料,且以被覆各半導體層15的方式形
成為長條狀(strip shape)。另外,為了導通畫素電極18和汲極電極14而在層間絕緣膜17所開口的通路孔40,係在汲極電極14的端部或是汲極電極14上配置了開口邊緣(第1圖的下側圖中的通路孔40的下端)。
本發明的實施形態的塑膠基板10的材料,能使用聚甲基丙烯酸甲酯、聚丙烯酸酯、聚碳酸酯、聚苯乙烯、聚環硫乙烷(polyethylene sulfide)、聚醚碸、聚烯烴、聚對苯二甲酸乙二酯、聚對萘二甲酸乙二酯、環烯烴聚合物、聚醚碸、三乙醯纖維素、聚氟乙烯薄膜、乙烯-四氟乙烯、共聚合樹脂、耐候性聚對苯二甲酸乙二酯、耐候性聚丙烯、玻璃纖維強化丙烯酸樹脂薄膜、玻璃纖維強化聚碳酸酯、透明性聚醯亞胺、氟系樹脂、環狀聚烯烴樹脂等,但本發明並非限定於這些材料。這些材料可以單獨使用,也可以作成積層2層以上的複合基板使用。又,也能使用在玻璃或塑膠基板上具有如彩色濾光片的樹脂層的基板。
本發明的實施形態的閘極電極11、源極配線13A、源極電極13B、汲極電極14、畫素電極18、及電容電極19的材料,能適合使用Au、Ag、Cu、Cr、Al、Mg、Li等低電阻金屬材料、或氧化物材料。具體而言,能使用氧化銦(In2O3)、氧化錫(SnO2)、氧化鋅(ZnO)、氧化鎘(CdO)、氧化銦鎘(CdIn2O4)、氧化鎘錫(Cd2SnO4)、氧化鋅錫(Zn2SnO4)、氧化銦鋅(InZnO)等。又,能較佳地使用在此氧化物材料掺雜不純物者。例如,能使用在氧化銦掺雜鉬或鈦者、在氧化錫掺雜銻或氟者、在氧化鋅
掺雜銦、鋁、鎵者等。其中,在氧化銦掺雜錫的氧化銦錫(ITO)展現特別低的電阻率。又,也能適合使用PEDOT(伸乙二氧基噻吩)等有機導電性材料,在此情況,可以單獨使用有機導電性材料,也可以將有機導電性材料和導電性氧化物材料積層複數層使用。閘極電極11、源極配線13A、源極電極13B及汲極電極14、畫素電極18、電容電極19,可以全部由相同的材料形成,也可以由不同的材料形成。但是,為了減少步驟,理想的是在源極配線13A、源極電極13B、及汲極電極14使用同一材料。這些電極係利用真空蒸鍍法、離子植入法、濺鍍法、雷射燒灼法、電漿CVD法、光CVD法、熱線CVD法等形成。又,這些電極也可以藉由利用網版印刷、彈性印刷、噴墨法等塗布將上述導電性材料作成墨狀、糊狀者,並加以燒成來形成。但是,在本發明,這些電極的形成方法不限定於這些方法。
本發明的實施形態的閘極絕緣膜12的材料,能使用氧化矽、氮化矽、氮氧化矽、氧化鋁、氧化鉭、氧化釔、氧化鉿、鋁酸鉿、氧化鋯、氧化鈦等無機材料、或是PMMA(聚甲基丙烯酸甲酯)等聚丙烯酸酯、PVA(聚乙烯醇)、PVP(聚乙烯酚)等。為了更簡便地形成閘極絕緣層12以及凹部,能適合使用具有感光性的塗布型絕緣材料,但本發明並非限定於這些材料。又,為了抑制閘極漏電流,絕緣材料的較佳電阻率係1011Ωcm以上,更佳為1014Ωcm以上。
本發明的實施形態的半導體層15,作為有機半導體材料,能將如聚噻吩、聚烯丙基胺、茀聯噻吩共聚合物、及它們的衍生物的高分子有機半導體材料;及如稠五苯、稠四苯、銅酞青、苝、6,13-雙(三異丙基矽烷基乙炔基)稠五苯(TIPS-稠五苯)、及它們的衍生物的低分子有機半導體材料;或用加熱處理等予以變換成有機半導體的前驅物用作半導體材料墨。又,奈米碳管或者是富勒烯等碳化合物或半導體奈米粒子分散液等也能用作半導體層的材料。在使用半導體材料墨的情況下,作為溶媒,能使用甲苯或二甲苯、二氫茚、四氫萘、丙二醇甲基醚乙酸酯等,但不限定於這些溶媒。
本發明的實施形態的保護層16的材料,能適合使用聚乙烯酚、聚甲基丙烯酸甲酯、聚醯亞胺、聚乙烯醇、環氧樹脂、氟樹脂等的高分子溶液、使氧化鋁或氧化矽凝膠(gel)等粒子分散的溶液。又,作為保護層16的形成方法,能適合使用利用網版印刷、彈性印刷(flexo-printing)、或噴墨法等濕式法,而直接形成圖案的方法。
在本發明的實施形態所使用的疏液處理墨所包含的化合物,可舉出硫醇化合物、或者是二硫醚化合物、或者是矽烷偶合劑、或者是膦酸化合物等,但不限定於這些化合物。作為這些化合物,能使用乙硫醇、丙硫醇、丁硫醇、戊硫醇、己硫醇、庚硫醇、辛硫醇、癸硫醇、十八硫醇等烷硫醇、苯硫醇、氟苯硫醇、五氟苯硫醇等芳香族硫醇類、二苯基二硫醚等二硫醚化合物、
甲基三甲氧基矽烷、乙基三甲氧基矽烷、丙基三甲氧基矽烷、辛基三甲氧基矽烷、辛基三乙氧基矽烷、辛基三氯矽烷、十八基三甲氧基矽烷、十八基三乙氧基矽烷、十八基三氯矽烷等矽烷偶合劑、十八基膦酸等膦酸化合物等,但不限定於這些化合物。又,溶媒係使用醇系溶劑,能使用1-丙醇、1-丁醇、2-丁醇、3-戊醇、2-甲基-1-丁醇、2-甲基-2-丁醇、異戊醇、3-甲基-2-丁醇、4-甲基-2-戊醇、烯丙醇、丙二醇單甲基醚、丙二醇單乙基醚等,但不限定於這些溶媒。
本發明的實施形態的層間絕緣膜17的材料,能使用聚醯亞胺、聚醯胺、聚酯、聚乙烯酚、聚乙烯醇、聚醋酸乙烯酯、聚胺基甲酸酯、聚碸、聚偏氟乙烯、氰基乙基支鏈澱粉(cyanoethylpullulan)、環氧樹脂、酚樹脂、苯并環丁烯樹脂、丙烯酸樹脂、聚苯乙烯、聚碳酸酯、環狀聚烯烴、氟樹脂、矽酮樹脂、或這些樹脂的聚合物合金(polymer alloy)或共聚合物,又,也能使用包含有機無機的填料等的複合材料,但不限定於這些材料。
作為使用本發明的圖案形成方法所形成的薄膜電晶體的構造,沒有特別的限定,可以是頂部閘極型、底部閘極型當中任一者的構造。
作為除了閘極電極11的配置以外的構造差異,可以是半導體層15的位置不同的底部接觸型、頂部接觸型,但在使用有機半導體材料作為半導體層15的情況下較佳為作成底部接觸型。這是因為底部接觸型,相較於頂
部接觸型,能縮短通道長度,能得到大的汲極電流的緣故。
第2圖顯示圖案布局平面圖以及剖面構造,其顯示包含實施例1的底部閘極底部接觸型的可撓薄膜電晶體陣列的薄膜電晶體陣列51的概略構成。以下,參照第2圖說明製造方法。本薄膜電晶體陣列51係1元件尺寸300μm×300μm,此元件係240×320個者。
使用聚對萘二甲酸乙二酯(PEN)薄膜作為塑膠基板10。利用濺鍍法在PEN薄膜上形成100nm的鋁的膜後,使用正型阻劑進行光微影及蝕刻,之後剝離阻劑,藉此形成閘極電極11及電容電極19。
接著,利用旋轉塗布機塗布塗布型感光性絕緣材料(AH系列,日立化成製)作為閘極絕緣材料後,雖然沒有圖示但利用光微影在閘極配線的端子部形成開口。之後,使其在180℃下乾燥而得到閘極絕緣膜12。
接下來,利用蒸鍍法形成50nm的金的膜,使用正型阻劑進行光微影及蝕刻,之後剝離阻劑,藉此形成源極電極13B及汲極電極14。
使用混合四氫萘和6,13-雙(三異丙基矽烷基乙炔基)稠五苯(TIPS-稠五苯)的溶液作為半導體層形成用材料。半導體層的形成係使用彈性印刷法。彈性印刷係使用感光性樹脂彈性版和150線的花紋輥(anilox roll),形成寬度100μm的長條形狀的半導體層。印刷後,使其在100℃下乾燥60分鐘形成半導體層15。
接著,形成保護層16。具體而言,使用氟系樹脂作為保護層形成材料。保護層的形成係使用彈性印刷。使用感光性樹脂彈性版作為彈性版,使用150線的花紋輥。使用長條形狀的彈性版,以覆蓋半導體層15的方式印刷線寬150μm的長條形狀的保護層16,使其在100℃下乾燥90分鐘形成保護層16。
在形成通路孔40的汲極電極部分進行疏液處理。第3圖係顯示在後面的步驟形成通路孔40的部分(通路孔形成預定部)的汲極電極14的形狀及剖面者。汲極電極14係在通路孔形成預定部的位置,具有在中心設置開口的開口部。第4圖係顯示從通路孔形成預定部的汲極電極14的疏液處理到層間絕緣膜17的形成為止的剖面形狀者。
如第4圖的(a)所示,利用噴墨印刷,將從噴墨頭21吐出的疏液處理墨22塗布在通路孔形成預定部的汲極電極14。疏液處理墨22包含硫醇化合物或是二硫醚化合物。溶媒能適合使用高沸點的醇溶媒。由於硫醇化合物或是二硫醚化合物的硫原子快速地與汲極電極14的金屬原子化合,因此能容易地賦予通路孔形成預定部的汲極電極14疏液性。若硫醇化合物或是二硫醚化合物包含氟化烷基鏈,則疏液性增加。
第4圖的(b)顯示由噴墨頭21所吐出的疏液處理墨22滴落在通路孔形成預定部的汲極電極14的內側的狀態。用感光性樹脂所形成的閘極絕緣膜12的表面有疏液性,滴落的疏液處理墨22係暫時滯留在汲極電極14的
開口內,但立刻如第4圖的(c)所示,在潤濕性相對比閘極絕緣膜12好的汲極電極14濕潤擴散開。藉由調整汲極電極14的開口徑和疏液處理墨22的塗布量,能只在通路孔形成預定部的汲極電極14印刷疏液處理墨22。
接著,形成層間絕緣膜17。使用環氧樹脂作為層間絕緣膜形成材料。使用網版印刷進行形成,使其在90℃下乾燥1小時,作成層間絕緣膜17。層間絕緣膜17係以覆蓋薄膜電晶體陣列51整體的方式印刷,但如第4圖的(d)所示,將開口擴張成比通路孔形成預定部的汲極電極14還大地印刷。
當在基板印刷層間絕緣膜形成材料的墨時墨會流動,但是由於通路孔形成預定部的汲極電極14的表面成為疏液性,因此如第4圖的(e)所示,層間絕緣膜材的流動停止在汲極電極14的邊緣部分,能將通路孔40設置成通路孔形成預定部的汲極電極14的外周形狀。
之後,形成畫素電極18。使用銀糊作為畫素電極材料。畫素電極18的形成係使用網版印刷,使銀糊完全填充在通路孔40內。圖案形成後,使其在90℃下乾燥1小時,藉此作成畫素電極18。
這樣後,在其與對向電極之間包夾電泳媒體20驅動本實施例的顯示器。不論是否利用印刷法形成層間絕緣膜17,都能良好地謀求畫素電極18和汲極電極14間的導通,能進行良好的影像顯示。
作為比較例1,顯示採取第5圖所示的形態的底部閘極底部接觸型可撓薄膜電晶體陣列52的製造方法。本電晶體陣列係1元件尺寸300μm×300μm,此元件係240×320個者。
使用聚對萘二甲酸乙二酯(PEN)薄膜作為塑膠基板10。與實施例1同樣地形成閘極電極11、電容電極19、閘極絕緣膜12、源極電極13、汲極電極14、半導體層15、及保護層16。
將層間絕緣膜17作成第一層間絕緣膜31和第二層間絕緣膜32的2層構造,層間絕緣膜31、32任一者都使用和實施例1同樣的材料及印刷方法。但是,第一層間絕緣膜31係在基板整面形成為膜厚0.5μm厚。以噴墨印刷在通路孔部滴下25pL左右的γ-丁內酯的液滴3次。接下來,為了賦予通路孔部的汲極電極14疏液性,而與實施例1同樣地以噴墨印刷塗布疏液處理墨22。接下來,將第二層間絕緣膜32形成為膜厚2.5μm厚。
與實施例1同樣地,形成畫素電極18,在其與對向電極之間包夾電泳媒體20驅動比較例1的顯示器,結果,層間絕緣膜17的在通路孔部的開孔係不充分的部位,妨礙畫素電極18和汲極電極14的導通,不亮的點多而無法進行良好的顯示。
如以上說明,根據本發明,便能提供不需在層間絕緣膜的形成上使用光微影而層間絕緣膜缺陷少的薄膜電晶體陣列及影像顯示裝置。
本發明的可撓薄膜電晶體,能作為可撓電子紙、或可撓有機EL顯示器等的開關元件等利用。另外,在其製造方法中,能藉由使用本發明,對生產性的提升有所幫助。具體而言,因為能以印刷法形成層間絕緣膜,故即使是大面積仍能用短的週期時間(tact time)形成薄膜電晶體陣列。又,由於不將形成層間絕緣膜的樹脂塗布在通路孔部的汲極電極上,因此充分確保了汲極電極和畫素電極的導通。藉此,可以低成本且高品質地製作可應用在可撓顯示器或IC卡、IC標籤等廣範圍上的可撓薄膜電晶體。
Claims (9)
- 一種薄膜電晶體陣列,其係至少具備絕緣基板、閘極電極、閘極絕緣膜、源極電極、汲極電極、半導體層、覆蓋該半導體層的保護層、畫素電極、和形成在該汲極電極與該畫素電極之間的層間絕緣膜,其中該層間絕緣膜係有機膜、或是有機和無機的混合膜,為了將該畫素電極連接於該汲極電極,該層間絕緣膜係在形成有該汲極電極之部位的一部分具有通路孔(via hole),該汲極電極具有位於該通路孔內而在電極材形成有開口的開口部,在該通路孔內的該汲極電極上存在硫醇基或二硫醚基。
- 如請求項1的薄膜電晶體陣列,其中該通路孔的開口端存在於該汲極電極的端部、或是該汲極電極上。
- 如請求項1或2的薄膜電晶體陣列,其中該層間絕緣膜的厚度係0.5μm以上5μm以下。
- 如請求項1或2的薄膜電晶體陣列,其中該層間絕緣膜係利用噴墨印刷法、網版印刷法、或是凹版印刷法形成。
- 如請求項1或2的薄膜電晶體陣列,其中該半導體層係有機半導體層。
- 如請求項1或2的薄膜電晶體陣列,其中該絕緣基板係塑膠基板。
- 如請求項1的薄膜電晶體陣列,其中該閘極絕緣膜露出於該汲極電極的該開口部。
- 一種影像顯示裝置,其係具備如請求項1至7中任一項的薄膜電晶體陣列、和影像顯示媒體。
- 如請求項8的影像顯示裝置,其中該影像顯示媒體係利用電泳方式者。
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JP2007324510A (ja) * | 2006-06-05 | 2007-12-13 | Sony Corp | 半導体装置の製造方法 |
JP2008042062A (ja) * | 2006-08-09 | 2008-02-21 | Chunghwa Picture Tubes Ltd | 接続用開口部の形成方法 |
JP4466763B2 (ja) * | 2008-05-14 | 2010-05-26 | ソニー株式会社 | パターン形成方法、半導体装置の製造方法、および表示装置の製造方法 |
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JP2011023445A (ja) * | 2009-07-14 | 2011-02-03 | Seiko Epson Corp | 多層配線基板の製造方法及び多層配線基板 |
JP5685855B2 (ja) * | 2009-09-08 | 2015-03-18 | 株式会社リコー | 表示装置および表示装置の製造方法 |
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