TWI593046B - Bonding device and bonding method - Google Patents

Bonding device and bonding method Download PDF

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Publication number
TWI593046B
TWI593046B TW104140754A TW104140754A TWI593046B TW I593046 B TWI593046 B TW I593046B TW 104140754 A TW104140754 A TW 104140754A TW 104140754 A TW104140754 A TW 104140754A TW I593046 B TWI593046 B TW I593046B
Authority
TW
Taiwan
Prior art keywords
wafer
chuck
substrate
bonding
head
Prior art date
Application number
TW104140754A
Other languages
English (en)
Chinese (zh)
Other versions
TW201633441A (zh
Inventor
牧浩
中野和男
谷由貴夫
Original Assignee
捷進科技有限公司
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Filing date
Publication date
Application filed by 捷進科技有限公司 filed Critical 捷進科技有限公司
Publication of TW201633441A publication Critical patent/TW201633441A/zh
Application granted granted Critical
Publication of TWI593046B publication Critical patent/TWI593046B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW104140754A 2015-03-11 2015-12-04 Bonding device and bonding method TWI593046B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015048168A JP6510837B2 (ja) 2015-03-11 2015-03-11 ボンディング装置及びボンディング方法

Publications (2)

Publication Number Publication Date
TW201633441A TW201633441A (zh) 2016-09-16
TWI593046B true TWI593046B (zh) 2017-07-21

Family

ID=56984111

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104140754A TWI593046B (zh) 2015-03-11 2015-12-04 Bonding device and bonding method

Country Status (4)

Country Link
JP (1) JP6510837B2 (enrdf_load_stackoverflow)
KR (2) KR101807369B1 (enrdf_load_stackoverflow)
CN (1) CN105977183B (enrdf_load_stackoverflow)
TW (1) TWI593046B (enrdf_load_stackoverflow)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6643197B2 (ja) * 2016-07-13 2020-02-12 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
CN108511364B (zh) * 2017-02-28 2020-01-24 上海微电子装备（集团）股份有限公司 一种芯片键合装置
JP7164314B2 (ja) 2017-04-28 2022-11-01 ベシ スウィッツァーランド エージー 部品を基板上に搭載する装置及び方法
CN107093651B (zh) * 2017-05-18 2023-08-04 江西比太科技有限公司 太阳能硅片二合一自动上下料设备
JP7018341B2 (ja) * 2018-03-26 2022-02-10 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
EP3633715A1 (en) * 2018-10-02 2020-04-08 Infineon Technologies Austria AG Multi-clip structure for die bonding
US10861819B1 (en) * 2019-07-05 2020-12-08 Asm Technology Singapore Pte Ltd High-precision bond head positioning method and apparatus
JP7352159B2 (ja) * 2019-09-30 2023-09-28 日本電気硝子株式会社 デバイスの製造方法
JP7704534B2 (ja) * 2021-01-18 2025-07-08 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
CN112802793B (zh) * 2021-02-09 2025-04-15 深圳市卓兴半导体科技有限公司 运行机构和晶片吸附装置
JP7627934B2 (ja) * 2021-02-26 2025-02-07 アスリートＦａ株式会社 半導体デバイスの実装装置及び実装方法
CN117080127B (zh) * 2023-10-11 2024-01-05 江苏快克芯装备科技有限公司 芯片吸取异常检测装置及检测方法

Family Cites Families (18)

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JPS6140040A (ja) * 1984-07-31 1986-02-26 Oki Electric Ind Co Ltd 発光素子のダイスボンデイング位置決め方法
JP2696617B2 (ja) * 1991-06-04 1998-01-14 ローム株式会社 ダイボンディング装置
JPH05337865A (ja) * 1992-06-10 1993-12-21 Sony Corp 半導体実装装置とこれを用いた実装方法
KR100214586B1 (ko) * 1995-12-29 1999-08-02 구자홍 홀로그램 모듈 조립장치
JPH11274180A (ja) * 1998-03-24 1999-10-08 Sony Corp ダイボンド装置及びそれを用いた半導体装置の製造方法
JP2000244195A (ja) 1999-02-17 2000-09-08 Rohm Co Ltd フリップチップ装着装置のチップ位置認識装置
JP2000269240A (ja) * 1999-03-16 2000-09-29 Hitachi Cable Ltd 光モジュールの製造方法及び光素子搭載装置
JP3851468B2 (ja) * 1999-07-09 2006-11-29 富士写真フイルム株式会社 発光部品のボンディング方法および装置
JP4425609B2 (ja) * 2003-02-19 2010-03-03 キヤノンマシナリー株式会社 チップマウント方法および装置
JP4156460B2 (ja) * 2003-07-09 2008-09-24 Ｔｄｋ株式会社 ワークのピックアップ方法及びその装置、実装機
JP3808465B2 (ja) * 2003-12-24 2006-08-09 エルピーダメモリ株式会社 マウント方法及び装置
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Also Published As

Publication number Publication date
KR20170121133A (ko) 2017-11-01
KR101874756B1 (ko) 2018-07-04
JP6510837B2 (ja) 2019-05-08
CN105977183A (zh) 2016-09-28
KR101807369B1 (ko) 2017-12-08
CN105977183B (zh) 2019-10-25
TW201633441A (zh) 2016-09-16
JP2016171106A (ja) 2016-09-23
KR20160110058A (ko) 2016-09-21

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