TWI591687B - 在貴金屬電極上製造可線接合及可焊接之表面的方法 - Google Patents
在貴金屬電極上製造可線接合及可焊接之表面的方法 Download PDFInfo
- Publication number
- TWI591687B TWI591687B TW102141120A TW102141120A TWI591687B TW I591687 B TWI591687 B TW I591687B TW 102141120 A TW102141120 A TW 102141120A TW 102141120 A TW102141120 A TW 102141120A TW I591687 B TWI591687 B TW I591687B
- Authority
- TW
- Taiwan
- Prior art keywords
- palladium
- noble metal
- layer
- metal electrode
- wire bondable
- Prior art date
Links
- 229910000510 noble metal Inorganic materials 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 119
- 229910052763 palladium Inorganic materials 0.000 claims description 63
- 238000000151 deposition Methods 0.000 claims description 44
- 238000007747 plating Methods 0.000 claims description 31
- 229910052737 gold Inorganic materials 0.000 claims description 29
- 239000010931 gold Substances 0.000 claims description 29
- 238000009713 electroplating Methods 0.000 claims description 28
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 27
- 238000007772 electroless plating Methods 0.000 claims description 27
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 26
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 26
- -1 palladium ions Chemical class 0.000 claims description 24
- 239000003638 chemical reducing agent Substances 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 16
- 230000003750 conditioning effect Effects 0.000 claims description 13
- 229910052697 platinum Inorganic materials 0.000 claims description 13
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 12
- 229910000531 Co alloy Inorganic materials 0.000 claims description 10
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 6
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical group COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 5
- 235000019253 formic acid Nutrition 0.000 claims description 5
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 claims description 3
- 229940081974 saccharin Drugs 0.000 claims description 3
- 235000019204 saccharin Nutrition 0.000 claims description 3
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910001020 Au alloy Inorganic materials 0.000 claims description 2
- 239000003353 gold alloy Substances 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 96
- 229910045601 alloy Inorganic materials 0.000 description 15
- 239000000956 alloy Substances 0.000 description 15
- 238000007654 immersion Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 11
- 229910018104 Ni-P Inorganic materials 0.000 description 10
- 229910018536 Ni—P Inorganic materials 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 239000002131 composite material Substances 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 7
- 229910001096 P alloy Inorganic materials 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 6
- 238000005476 soldering Methods 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 5
- 229910000085 borane Inorganic materials 0.000 description 5
- 239000008139 complexing agent Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000010970 precious metal Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 4
- 239000004280 Sodium formate Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 235000019254 sodium formate Nutrition 0.000 description 4
- 239000003381 stabilizer Substances 0.000 description 4
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910000521 B alloy Inorganic materials 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000012459 cleaning agent Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910020674 Co—B Inorganic materials 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- JHRWWRDRBPCWTF-OLQVQODUSA-N captafol Chemical compound C1C=CC[C@H]2C(=O)N(SC(Cl)(Cl)C(Cl)Cl)C(=O)[C@H]21 JHRWWRDRBPCWTF-OLQVQODUSA-N 0.000 description 2
- 229910001429 cobalt ion Inorganic materials 0.000 description 2
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- GQZXNSPRSGFJLY-UHFFFAOYSA-N hydroxyphosphanone Chemical compound OP=O GQZXNSPRSGFJLY-UHFFFAOYSA-N 0.000 description 2
- 229940005631 hypophosphite ion Drugs 0.000 description 2
- 239000000138 intercalating agent Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- UBQKCCHYAOITMY-UHFFFAOYSA-N pyridin-2-ol Chemical compound OC1=CC=CC=N1 UBQKCCHYAOITMY-UHFFFAOYSA-N 0.000 description 2
- 150000003230 pyrimidines Chemical class 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- SNICXCGAKADSCV-JTQLQIEISA-N (-)-Nicotine Chemical compound CN1CCC[C@H]1C1=CC=CN=C1 SNICXCGAKADSCV-JTQLQIEISA-N 0.000 description 1
- YTEMVNLZZGMIRZ-UHFFFAOYSA-N 2h-pyrimidine-1-sulfonic acid Chemical compound OS(=O)(=O)N1CN=CC=C1 YTEMVNLZZGMIRZ-UHFFFAOYSA-N 0.000 description 1
- RXFCIXRFAJRBSG-UHFFFAOYSA-N 3,2,3-tetramine Chemical compound NCCCNCCNCCCN RXFCIXRFAJRBSG-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-M Butyrate Chemical compound CCCC([O-])=O FERIUCNNQQJTOY-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- DFPAKSUCGFBDDF-ZQBYOMGUSA-N [14c]-nicotinamide Chemical compound N[14C](=O)C1=CC=CN=C1 DFPAKSUCGFBDDF-ZQBYOMGUSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OTBHHUPVCYLGQO-UHFFFAOYSA-N bis(3-aminopropyl)amine Chemical compound NCCCNCCCN OTBHHUPVCYLGQO-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000005265 dialkylamine group Chemical group 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- QOHMWDJIBGVPIF-UHFFFAOYSA-N n',n'-diethylpropane-1,3-diamine Chemical compound CCN(CC)CCCN QOHMWDJIBGVPIF-UHFFFAOYSA-N 0.000 description 1
- DILRJUIACXKSQE-UHFFFAOYSA-N n',n'-dimethylethane-1,2-diamine Chemical compound CN(C)CCN DILRJUIACXKSQE-UHFFFAOYSA-N 0.000 description 1
- QHJABUZHRJTCAR-UHFFFAOYSA-N n'-methylpropane-1,3-diamine Chemical compound CNCCCN QHJABUZHRJTCAR-UHFFFAOYSA-N 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 229960002715 nicotine Drugs 0.000 description 1
- SNICXCGAKADSCV-UHFFFAOYSA-N nicotine Natural products CN1CCCC1C1=CC=CN=C1 SNICXCGAKADSCV-UHFFFAOYSA-N 0.000 description 1
- 235000001968 nicotinic acid Nutrition 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 229960003512 nicotinic acid Drugs 0.000 description 1
- RGHXWDVNBYKJQH-UHFFFAOYSA-N nitroacetic acid Chemical compound OC(=O)C[N+]([O-])=O RGHXWDVNBYKJQH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- 150000002941 palladium compounds Chemical class 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- HTIMQENIYIHRMC-UHFFFAOYSA-N propane-1,1,2-triamine Chemical compound CC(N)C(N)N HTIMQENIYIHRMC-UHFFFAOYSA-N 0.000 description 1
- XNYADZUHUHIGRZ-UHFFFAOYSA-N propane-1,1,3-triamine Chemical compound NCCC(N)N XNYADZUHUHIGRZ-UHFFFAOYSA-N 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical compound [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 1
- 125000005555 sulfoximide group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1844—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Description
本發明係關於諸如包括貴金屬電極之發光二極體之光電子裝置的製造及位於其上之可線結合及可焊接表面修整之形成。
諸如發光二極體(LED)之光電子裝置包含由當施加電流時發光的半導體物質所製成的區域。目前的LED係基於複合半導體,尤其所謂之III-V族化合物半導體,諸如Ga-N、Ga-P及Ga-As或諸如Ga-N/In-Ga-N之多層組合,其沉積在諸如藍寶石晶圓及矽晶圓之基板材料上。
該等複合半導體需要藉由電極電連接至電源。由於介於電極與複合半導體層之間不合要求的擴散過程,習知電極材料(諸如鋁或銅)不可用於LED中。由諸如鉑或金之貴金屬製造之電極代之以用作電極材料。
電極係藉由將諸如銅線之導體焊接或結合至電極上而連接至電源。因此,需要將可焊接及/或可線結合表面附接至貴金屬電極上,從而獲得介於導體與電極之間充分的電接觸及機械可靠性。而且,在電極與導體之間形成的連接點必須可靠。
本發明之一個目的在於提供一種用於在製造(光)電子裝置中將可
線結合表面及/或可焊接表面形成於由例如鉑或金製造之貴金屬電極上的方法。
該目的係藉由一種在貴金屬電極上製造可線結合及/或可焊接表面之方法解決,其包括呈以下順序的步驟:i.提供一其上附接有至少一個貴金屬電極之基板,ii.清潔該至少一個貴金屬電極,iii.藉由無電電鍍由含水電鍍浴在該至少一個貴金屬電極上沉積一選自鈀及鈀合金之晶種層,其中該電鍍浴在沉積該晶種層期間具有在60至90℃之範圍內的溫度,iv.藉由無電電鍍在該晶種層上沉積一選自包括鎳合金及鈷合金之群的中間層,v.藉由無電電鍍在該中間層上沉積至少一表面修整層,其中該至少一表面修整層係選自由鈀、鈀合金、金及金合金組成之群。
根據本發明之方法提供用於由貴金屬製造之電極的表面修整,其提供充分的可焊接性及/或可線結合性。而且,在電極與表面修整層之間沉積的中間層給整體組合提供高機械持久性。因此,在給整體組合應用機械力的焊接及/或線結合操作期間保護LED之底部複合半導體層及基板材料。
諸如LED之(光)電子裝置中之複合半導體層需要藉由電導體(諸如與附接至該複合半導體層接觸之導線)與電源電連接。電導體較佳地藉由焊接及/或線結合與電極接觸。電極及複合半導體層附接至較佳地選自包括藍寶石晶圓、矽晶圓及氧化銦錫晶圓之群的基板。
因為諸如鋁或銅之習知電極材料當與通常用作LED及相關裝置中之電致發光材料的複合半導體材料接觸時傾向於不合要求的擴散過程,所以附接至複合半導體層之電極需要由貴金屬製造。
適宜的電極包括一或多種較佳地選自包括鉑、金及鈀之群的貴金屬。
需要沉積在貴金屬電極上之表面修整以用於連續的焊接及/或線結合,藉此方法,電極與電源電接觸。
較佳而言,表面修整係僅藉由無電電鍍及/或浸沒類型電鍍沉積,該等方法在原理上容許將金屬及金屬合金層選擇性地沉積在充分活化之金屬表面上。因此,在該情形下,表面修整不沉積在未藉由例如晶種層充分活化的基板表面的其他區域上。
在製造印刷電路板等中已知的習知表面修整的沉積(其中該電極材料為銅及較不常見的為鋁)不適用於由較佳地選自包括鉑、金及鈀之群的貴金屬製造的電極。
在鋁作為電極材料的情形下,鋅酸鹽預處理容許在其上無電沉積選自鎳合金及鈷合金之中間層。
在銅作為電極材料的情形下,浸沒電鍍之貴金屬層(諸如浸沒電鍍之鈀層)容許在其上無電沉積選自鎳合金及鈷合金之中間層。
浸沒電鍍貴金屬層(諸如浸沒電鍍鈀層)未充分地活化諸如鉑或金電極之貴金屬電極之表面(對照實例2及3)。
較佳而言,清潔電極表面以除去有機殘質等,然後沉積表面修整層。較佳而言,應用包括酸及視需要進一步包括界面活性劑及/或氧化劑之蝕刻清潔劑組合物以清潔貴金屬電極的表面。尤其適宜的蝕刻清潔劑組合物包括水、硫酸及過氧化氫。
視需要地,蝕刻清潔之後繼之以在諸如硫酸之酸之水溶液中之清洗。
在本發明之另一實施例中,應用電漿處理以清潔貴金屬電極的表面。
可應用蝕刻清潔及電漿處理之組合以清潔貴金屬電極的表面。
除蝕刻清潔及/或電漿處理之外,可視需要地應用用於從貴金屬電極之表面除去不合要求的顆粒的處理。一種該類型之尤其適宜的處理為標準清潔1(SC1)處理,其包括利用包括氫氧化鋁及過氧化氫之水溶液處理貴金屬電極的表面的步驟。此種類型之組合物及處理條件為技術界已知。
藉由例如將包括至少一個電極之基板浸於清潔劑中或將清潔劑噴灑於電極上,將電極與該清潔劑接觸。在本發明之一個實施例中,藉由施加超音波來支持清潔處理。
接著,電極之經清潔表面係藉由將電極與包括鈀離子源、還原劑及用於鈀離子之錯合劑的無電(自動催化)鈀電鍍浴接觸而活化。取決於所用還原劑之類型,因而將鈀或鈀合金薄層沉積在經清潔電極上及充當連續電鍍操作之晶種層。
本發明者發現用於在該電極之表面上沉積鈀或鈀合金之無電電鍍浴應保持在60至90℃之範圍內的溫度以在該電極上沉積鈀或鈀合金。更佳而言,無電電鍍浴在沉積鈀或鈀合金於該電極期間維持在介於60至80℃之間之範圍內的溫度。最佳而言,該溫度在沉積期間維持在60至70℃之範圍內。該鈀或鈀合金層在本文中稱為晶種層。
需要60℃之最小電鍍浴溫度以獲得用於連續沉積中間層之電極的充分活化,即藉由在其上沉積鈀或鈀合金之晶種層(對照實例4)。因為用於晶種層之該沉積的無電電鍍浴較佳係含水電鍍浴,因此最大溫度主要由於水的沸點(在大氣壓下,100℃)而受限。由於根據本發明之方法之工業應用的實際原因,在沉積晶種層期間,無電電鍍浴之最大溫度較佳係90℃,更佳而言80℃及最佳而言70℃,從而限制來自
使用期間受熱之無電電鍍浴所蒸發的水量。
用於將晶種層沉積在貴金屬電極之經清潔表面上之無電電鍍浴中的鈀離子源較佳地選自水可溶鈀化合物,諸如硫酸鈀、氯化鈀及乙酸鈀。鈀離子之替代性來源為該等鈀鹽及一或多種含氮錯合劑(諸如陽離子鈀-乙二胺錯合物)與例如硫酸鹽或氯化物反離子的反應產物。
用於將晶種層沉積在貴金屬電極上之無電電鍍浴中的鈀離子濃度較佳地在0.5至500mmol/l的範圍內,更佳而言1至100mmol/l。
沉積鈀之還原劑較佳地選自包括甲酸、其衍生物或鹽之群。甲酸之適宜的衍生物為例如甲酸之酯,諸如甲酸甲酯、甲酸乙酯及甲酸丙酯。甲酸之其他適宜的衍生物為例如取代或未經取代之醯胺,諸如甲醯胺及N,N-二甲基甲醯胺。用於甲酸之鹽的適宜的反離子為例如選自鋰、鈉、鉀及銨。
純鈀層係由該電鍍浴沉積。
用於沉積鈀合金之還原劑較佳地選自由諸如次磷酸鈉之次磷酸鹽化合物(Pd-P合金之沉積)及諸如二烷基胺硼烷之硼烷化合物(Pd-B合金之沉積)組成之群。
最佳而言,用於沉積鈀合金之還原劑為次磷酸鈉。
無電電鍍浴中之還原劑的濃度較佳地在10至1000mmol/l的範圍。
該用於將晶種層沉積於貴金屬電極上之無電電鍍浴中之鈀離子的至少一種錯合劑較佳係含氮錯合劑。更佳而言,鈀離子的錯合劑係選自由一級胺、二級胺及三級胺組成之群。適宜的胺為例如乙二胺、1,3-二胺基-丙烷、1,2-雙(3-胺基-丙基-胺基)-乙烷、2-二乙基-胺基-乙基-胺、二伸乙基三胺、二伸乙基三胺-五乙酸、硝基-乙酸、N-(2-羥基-乙基)-乙二胺、乙二胺-N,N-二乙酸、2-(二甲基-胺基)-乙基-胺、
1,2-二胺基-丙基-胺、1,3-二胺基-丙基-胺、3-(甲基-胺基)-丙基-胺、3-(二甲基-胺基)-丙基-胺、3-(二乙基-胺基)-丙基-胺、雙-(3-胺基-丙基)-胺、1,2-雙-(3-胺基-丙基)-烷基-胺、二伸乙基三胺、三伸乙基四胺、四伸乙基五胺、五伸乙基六胺及其混合物。
無電電鍍浴中之該至少一種錯合劑與鈀離子之莫耳比在2:1至50:1的範圍內。
因為電鍍浴在低於4之pH值下傾向於不穩定,無電鈀或鈀合金電鍍浴之pH值較佳地在4至7的範圍內。更佳而言,電鍍浴之pH值在5至6的範圍內。
在本發明之一個實施例中,無電電鍍浴進一步包括呈較佳而言0.001至0.1mol/l,更佳而言0.001至0.01mol/l含量的至少一種其他的穩定劑。
該等其他的穩定劑可在高電鍍浴溫度下延長用於將晶種層沉積在貴金屬電極上之無電鈀或鈀合金電鍍浴的壽命。
該等其他的穩定劑較佳係磺醯亞胺。一種較佳的磺醯亞胺為糖精及其衍生物。最佳的磺醯亞胺為糖精。
無電鈀或鈀合金電鍍浴中之其他視需要的添加劑係選自包括聚苯基硫化物、嘧啶、多元醇及無機錯合劑如硫氰化物之群。較佳的嘧啶為菸醯胺、嘧啶-3-磺酸、菸酸、2-羥基吡啶及菸鹼。較佳的多元醇為聚乙二醇、聚丙二醇、聚乙二醇-聚丙二醇共聚物及其衍生物。
然後,藉由無電電鍍將一中間層沉積在該晶種層上。該中間層較佳地選自由鎳合金及鈷合金組成之群。適宜的鎳合金為二元鎳合金諸如Ni-P合金及Ni-B合金,及三元鎳合金,諸如Ni-Mo-P合金及Ni-W-P合金。適宜的鈷合金為例如二元鈷合金(諸如Co-P合金及Co-B合金),及三元鈷合金(諸如Co-Mo-P及Co-W-P合金)。
用於將中間層沉積在該晶種層上之適宜的無電電鍍浴包括鎳或
鈷離子源、視需要之第二種金屬離子源、還原劑(諸如在沉積含磷合金之情形下的次磷酸鈉或在沉積含硼合金之情形下的硼烷化合物,諸如烷基胺硼烷)。
包括鎳離子及次磷酸根離子源之無電電鍍浴適合沉積Ni-P合金。同樣地,鈷離子及次磷酸根離子源導致Co-P合金之沉積。在硼烷化合物代替次磷酸根離子用作還原劑的情形下,分別獲得Ni-B或Co-B合金。添加至電鍍浴中之第二種金屬離子源可沉積各自的三元合金。
適宜的無電電鍍浴進一步包括至少一種錯合劑諸如聚羧酸及/或羥基羧酸及視需要之至少一種穩定劑,諸如銻離子、鉛離子、鉍離子及/或含硫有機化合物,諸如硫脲或其衍生物。
技術中已知用於將中間層沉積在晶種層上之適宜的無電電鍍浴組合物及電鍍參數,諸如沉積期間之電鍍浴溫度。
選自鎳合金及鈷合金之中間層比由貴金屬製造之電極層及電鍍於該中間層上之表面修整層顯著地更硬。因此,該中間層給LED裝置之敏感部件(諸如基板材料及發光二極體自身)在焊接及/或線結合操作期間提供機械穩定性。在線結合至該中間層之頂部上的表面修整層期間,以大量力擠壓線,由於充當中間層之鎳合金或鈷合金的固有硬度,該中間層分配/獲得大部份的該力。
該中間層的厚度較佳地在0.1至5μm的範圍內,更佳而言0.15至3μm。
接著,將可焊接及/或線可結合層(文中表示為「表面修整層」)沉積在該中間層上。
取決於此後以電源連接電極所用之技術及/或該連接之穩定性/可靠性,該表面修整層可由沉積在該中間層上之單一層或兩個個別層組成。
單一表面修整層為藉由浸沒類型電鍍或無電電鍍於該中間層上
沉積之金層。作為表面修整之該等金層可用於焊接及結合例如金線於電極上。金層之厚度較佳地在0.01至0.5μm的範圍內,更佳而言0.05至0.3μm。
另一類型之適宜的單一表面修整層為藉由無電電鍍沉積於中間層上的鈀或鈀合金層。用於活化由貴金屬製造的電極的相同類型的電鍍浴組合物可用於此任務中。因此,諸如Pd-P及Pd-B合金之鈀或鈀合金係由包括鈀離子源、還原劑及用於鈀離子之至少一種錯合劑的電鍍浴沉積。
最佳而言,電鍍浴為用於沉積鈀之含水電鍍浴,其包括鈀離子源(諸如硫酸鈀)、選自甲酸、其鹽及衍生物之還原劑及至少一種含氮錯合劑。
作為單一表面修整層之鈀或鈀合金尤其適合將由銅、鈀或經鈀塗覆之銅線製成的電線結合至電極上。
充當單一表面修整層之鈀或鈀合金的厚度較佳地在0.02至1μm的範圍內,更佳而言0.2至0.5μm。
根據本發明之適宜的多層表面修整層係由藉由無電電鍍於中間層上沉積之鈀或鈀合金層及藉由浸沒類型電鍍或無電電鍍於該鈀或鈀合金層上沉積之金層或金合金層組成。
鈀或鈀合金層可由上述無電電鍍浴組合物沉積。
在中間層與金層之間沉積之鈀或鈀合金的厚度較佳地在0.1至0.5μm,更佳而言0.15至0.3μm的範圍內。
在該鈀或鈀合金層上沉積的金層厚度較佳地在0.01至0.5μm,更佳而言0.05至0.3μm的範圍內。
為此目的,可使用由先前技術已知的浸沒類型或無電金電鍍電解質。該等電鍍浴組合物亦適用於直接將金沉積於中間層上。
用於將金沉積在中間層或鈀或鈀合金層上之適宜的浸沒類型電
鍍浴包括金離子源及至少一種錯合劑,諸如亞硫酸根離子。技術中已知電鍍參數(諸如電鍍浴在使用期間的溫度及電鍍時間)且可調整至佈線實驗中實現之所需的電鍍速率及金層厚度。
用於沉積金之浸沒類型電鍍浴較佳係含水組合物。
用於將金沉積在中間層或鈀或鈀合金層上之適宜的無電電鍍浴包括金離子源、還原劑及至少一種錯合劑。
用於沉積金之電鍍浴最佳係含水浸沒類型電鍍浴。
實例
現將藉由引用以下非限制性實例說明本發明。
在所有實例中使用附接至作為基板材料之矽晶圓之由具有100μm直徑之鉑製造的電極。個別電極之間的距離為400μm。
利用包括界面活性劑與酸之水溶液清潔電極之表面。
接著,測試用於在沉積作為中間層之Ni-P合金之前活化電極表面的不同方法。
用於將鈀層沉積在Ni-P合金層上之含水無電鈀電鍍浴包括硫酸鈀、作為還原劑之甲酸鈉及作為用於鈀離子之錯合劑的乙二胺。
用於將金層沉積在鈀層上之含水浸沒類型電鍍浴包括金離子源及亞硫酸根離子。
對照實例1
在將包括鉑電極之矽晶圓利用水清潔及清洗之後立即將其浸於無電鎳電鍍浴中。
在經清潔之電極表面上不引發Ni-P合金(中間層)之電鍍。
對照實例2
在將包括鉑電極之矽晶圓於包括硫酸鈀及硫酸之浸沒類型鈀電鍍浴中清潔之後將其活化。浸沒類型電鍍浴在使用期間維持在20℃。
在經清潔之電極表面上不引發Ni-P合金(中間層)之電鍍。
對照實例3
在將包括鉑電極之矽晶圓於包括硫酸鈀及硫酸之浸沒類型鈀電鍍浴中清潔之後將其活化。浸沒類型電鍍浴在使用期間維持在70℃。
在經清潔之電極表面上不引發Ni-P合金(中間層)之電鍍。
對照實例4
在將包括鉑電極之矽晶圓於包括硫酸鈀、作為還原劑之甲酸鈉及含氮錯合劑之無電鈀電鍍浴中清潔之後將其活化。電鍍浴在使用期間維持在55℃。
在經清潔之電極表面上不引發Ni-P合金(中間層)之電鍍。
實例1
在將包括鉑電極之矽晶圓於包括硫酸鈀、作為還原劑之甲酸鈉及含氮錯合劑之無電鈀電鍍浴中清潔之後將其活化。電鍍浴在使用期間維持在65℃。
在經清潔之電極表面上按要求引發Ni-P合金(中間層)之電鍍。
實例2
在將包括鉑電極之矽晶圓於包括硫酸鈀、作為還原劑之甲酸鈉及含氮錯合劑之無電鈀電鍍浴中清潔之後將其活化。電鍍浴在使用期間維持在85℃。
在經清潔之電極表面上按要求引發Ni-P合金(中間層)之電鍍。
Claims (12)
- 一種在貴金屬電極上製造可線結合及/或可焊接表面之方法,其包括呈以下順序的步驟:i.提供一其上附接有至少一個貴金屬電極之基板,ii.清潔該至少一個貴金屬電極,iii.藉由無電電鍍由含水電鍍浴在該至少一個貴金屬電極上沉積一選自鈀及鈀合金之晶種層,其中該電鍍浴在沉積該晶種層期間具有在60至90℃之範圍內的溫度及其中該電鍍浴包括鈀離子源、還原劑及用於鈀離子之錯合劑,iv.藉由無電電鍍在該晶種層上沉積一選自包括鎳合金及鈷合金之群的中間層,v.藉由無電電鍍在該中間層上沉積至少一層表面修整層,其中該至少一層表面修整層係選自由鈀、鈀合金、金及金合金組成之群。
- 如請求項1之在貴金屬電極上製造可線結合及/或可焊接表面之方法,其中該至少一個貴金屬電極包括鉑、金及鈀之一或多種。
- 如請求項1或2之在貴金屬電極上製造可線結合及/或可焊接表面之方法,其中該在步驟iii.中應用之含水電鍍浴進一步包括磺醯亞胺化合物。
- 如請求項3之在貴金屬電極上製造可線結合及/或可焊接表面之方法,其中該磺醯亞胺化合物為糖精。
- 如請求項3之在貴金屬電極上製造可線結合及/或可焊接表面之方法,其中該磺醯亞胺化合物之濃度在0.001至0.1mol/l的範圍內。
- 如請求項1或2之在貴金屬電極上製造可線結合及/或可焊接表面 之方法,其中該電鍍浴在沉積該晶種層期間具有在60至80℃之範圍內的溫度。
- 如請求項1或2之在貴金屬電極上製造可線結合及/或可焊接表面之方法,其中該晶種層係由鈀製造。
- 如請求項1或2之在貴金屬電極上製造可線結合及/或可焊接表面之方法,其中該用於沉積該晶種層之電鍍浴中之還原劑係選自由甲酸、其衍生物及其鹽組成之群。
- 如請求項1或2之在貴金屬電極上製造可線結合及/或可焊接表面之方法,其中該包括至少一個貴金屬電極之基板係選自包括藍寶石晶圓、矽晶圓及氧化銦錫晶圓之群。
- 如請求項1或2之在貴金屬電極上製造可線結合及/或可焊接表面之方法,其中該至少一層表面修整層為一鈀層。
- 如請求項1或2之在貴金屬電極上製造可線結合及/或可焊接表面之方法,其中該至少一層表面修整層為一金層。
- 如請求項1或2之在貴金屬電極上製造可線結合及/或可焊接表面之方法,其中該表面修整層係由一鈀層及一在該鈀層之頂部上電鍍的金層組成。
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2012
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- 2013-11-12 TW TW102141120A patent/TWI591687B/zh active
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- 2013-11-14 US US14/435,472 patent/US9401466B2/en active Active
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US20150287898A1 (en) | 2015-10-08 |
CN104854260A (zh) | 2015-08-19 |
TW201430901A (zh) | 2014-08-01 |
KR20150092152A (ko) | 2015-08-12 |
US9401466B2 (en) | 2016-07-26 |
WO2014086567A2 (en) | 2014-06-12 |
EP2740818A1 (en) | 2014-06-11 |
KR102162537B1 (ko) | 2020-10-08 |
JP2016506449A (ja) | 2016-03-03 |
JP6231124B2 (ja) | 2017-11-15 |
CN104854260B (zh) | 2018-02-09 |
EP2740818B1 (en) | 2016-03-30 |
WO2014086567A3 (en) | 2014-09-12 |
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