JP2016506449A - 貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面の製造方法 - Google Patents
貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面の製造方法 Download PDFInfo
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Abstract
Description
本発明の課題は、(光)電子素子の製造においてワイヤボンディング可能な表面および/またははんだ付け可能な表面を、例えば白金または金製の貴金属電極上で形成する方法を提供することである。
前記の課題は、貴金属電極上でワイヤボンディング可能且つ/またははんだ付け可能な表面の製造方法であって、以下の段階をこの順で含む前記方法によって解決される:
i. 基板上に施与された少なくとも1つの貴金属電極を有する基板を準備する段階、
ii. 前記少なくとも1つの貴金属電極を洗浄する段階、
iii. 前記少なくとも1つの貴金属電極上に、パラジウムおよびパラジウム合金から選択されるシード層を、無電解めっきによって水性めっき浴から堆積する段階、ここで、前記めっき浴は前記シード層の堆積の間、60〜90℃の範囲の温度を有する、
iv. ニッケル合金およびコバルト合金を含む群から選択される中間層を、前記シード層上に無電解めっきによって堆積する段階、
v. 少なくとも1つの表面仕上げ層を前記中間層上に無電解めっきによって堆積する段階、ここで、前記少なくとも1つの表面仕上げ層は、パラジウム、パラジウム合金、金および金合金からなる群から選択される。
(光)電子素子、例えばLEDにおける化合物半導体層は、前記化合物半導体層に施与された電極に接触される導電体によって、例えばワイヤリングによって、電源と電気的に接触されなければならない。導電体は好ましくは、はんだ付けおよび/またはワイヤボンディングによって電極と接触されている。電極および化合物半導体層は、好ましくはサファイアウェハ、シリコンウェハ、酸化インジウムスズウェハを含む群から選択される基板に施与されている。
白金電極を含むシリコンウェハを、洗浄し且つ水で濯いだ直後に無電解ニッケルめっき浴中に浸漬した。
白金電極を含むシリコンウェハを、洗浄後に、硫酸パラジウムおよび硫酸を含む浸漬型パラジウムめっき浴中で活性化させた。浸漬型めっき浴を使用の間、20℃で保持した。
白金電極を含むシリコンウェハを、洗浄後に、硫酸パラジウムおよび硫酸を含む浸漬型パラジウムめっき浴中で活性化させた。浸漬型めっき浴を使用の間、70℃で保持した。
白金電極を含むシリコンウェハを、洗浄後に、硫酸パラジウム、還元剤としてのギ酸ナトリウムおよび窒素含有錯化剤を含む無電解パラジウムめっき浴中で活性化させた。前記めっき浴を使用の間、55℃で保持した。
白金電極を含むシリコンウェハを、洗浄後に、硫酸パラジウム、還元剤としてのギ酸ナトリウムおよび窒素含有錯化剤を含む無電解パラジウムめっき浴中で活性化させた。前記めっき浴を使用の間、65℃で保持した。
白金電極を含むシリコンウェハを、洗浄後に、硫酸パラジウム、還元剤としてのギ酸ナトリウムおよび窒素含有錯化剤を含む無電解パラジウムめっき浴中で活性化させた。前記めっき浴を使用の間、85℃で保持した。
Claims (12)
- 貴金属電極上でワイヤボンディング可能且つ/またははんだ付け可能な表面を製造する方法であって、以下の段階をこの順で含む前記方法:
i. 基板上に施与された少なくとも1つの貴金属電極を有する基板を準備する段階、
ii. 前記少なくとも1つの貴金属電極を洗浄する段階、
iii. 前記少なくとも1つの貴金属電極上に、パラジウムおよびパラジウム合金から選択されるシード層を、無電解めっきによって水性めっき浴から堆積する段階、ここで、前記めっき浴は前記シード層の堆積の間、60〜90℃の範囲の温度を有し、且つ、前記めっき浴はパラジウムイオン源、還元剤、およびパラジウムイオンのための錯化剤を含む、
iv. ニッケル合金およびコバルト合金を含む群から選択される中間層を、前記シード層上に無電解めっきによって堆積する段階、
v. 少なくとも1つの表面仕上げ層を前記中間層上に無電解めっきによって堆積する段階、ここで、前記少なくとも1つの表面仕上げ層は、パラジウム、パラジウム合金、金および金合金からなる群から選択されるが、ただしパラジウムまたはパラジウム合金層上に、金からなる単独の表面層が浸漬型めっきによって堆積され、且つ多層表面仕上げの金層が浸漬型めっきまたは無電解めっきのいずれかによって堆積される。 - 少なくとも1つの電極が、白金、金、およびパラジウムの1つまたはそれより多くを含む、請求項1に記載の貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面を製造する方法。
- 段階iiiにおいて施与される水性めっき浴がさらに、スルフィミド化合物を含む、請求項1または2に記載の貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面を製造する方法。
- スルフィミド化合物がサッカリンである、請求項3に記載の貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面を製造する方法。
- スルフィミド化合物の濃度が0.001〜0.1mol/lの範囲である、請求項3または4に記載の貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面を製造する方法。
- シード層の堆積の間、めっき浴が60〜80℃の範囲の温度を有する、請求項1から5までのいずれか1項に記載の貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面を製造する方法。
- シード層がパラジウム製である、請求項1から6までのいずれか1項に記載の貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面を製造する方法。
- シード層を堆積するためのめっき浴中の還元剤が、ギ酸、それらの誘導体およびそれらの塩からなる群から選択される、請求項1から7までのいずれか1項に記載の貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面を製造する方法。
- 少なくとも1つの電極を含む基板が、サファイアウェハ、シリコンウェハおよび酸化インジウムスズウェハを含む群から選択される、請求項1から8までのいずれか1項に記載の貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面を製造する方法。
- 少なくとも1つの表面仕上げ層がパラジウム層である、請求項1から9までのいずれか1項に記載の貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面を製造する方法。
- 少なくとも1つの表面仕上げ層が金層である、請求項1から9までのいずれか1項に記載の貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面を製造する方法。
- 前記表面仕上げが、パラジウム層と、前記パラジウム層の上にめっきされた金層とからなる、請求項1から9までのいずれか1項に記載の貴金属電極上でワイヤボンディング可能且つはんだ付け可能な表面を製造する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP12195672.6A EP2740818B1 (en) | 2012-12-05 | 2012-12-05 | Method for manufacture of wire bondable and solderable surfaces on noble metal electrodes |
EP12195672.6 | 2012-12-05 | ||
PCT/EP2013/073841 WO2014086567A2 (en) | 2012-12-05 | 2013-11-14 | Method for manufacture of wire bondable and solderable surfaces on noble metal electrodes |
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JP2016506449A true JP2016506449A (ja) | 2016-03-03 |
JP6231124B2 JP6231124B2 (ja) | 2017-11-15 |
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US (1) | US9401466B2 (ja) |
EP (1) | EP2740818B1 (ja) |
JP (1) | JP6231124B2 (ja) |
KR (1) | KR102162537B1 (ja) |
CN (1) | CN104854260B (ja) |
TW (1) | TWI591687B (ja) |
WO (1) | WO2014086567A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016156034A (ja) * | 2015-02-23 | 2016-09-01 | 三菱マテリアル株式会社 | 無電解Niめっき方法 |
JP2018535325A (ja) * | 2015-11-27 | 2018-11-29 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツングAtotech Deutschland GmbH | パラジウムめっき浴組成物および無電解パラジウムめっき方法 |
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TWI591687B (zh) | 2017-07-11 |
KR20150092152A (ko) | 2015-08-12 |
EP2740818B1 (en) | 2016-03-30 |
WO2014086567A3 (en) | 2014-09-12 |
KR102162537B1 (ko) | 2020-10-08 |
JP6231124B2 (ja) | 2017-11-15 |
WO2014086567A2 (en) | 2014-06-12 |
EP2740818A1 (en) | 2014-06-11 |
US20150287898A1 (en) | 2015-10-08 |
CN104854260B (zh) | 2018-02-09 |
CN104854260A (zh) | 2015-08-19 |
US9401466B2 (en) | 2016-07-26 |
TW201430901A (zh) | 2014-08-01 |
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