JP6494899B1 - 半導体基板、及びその製造方法 - Google Patents
半導体基板、及びその製造方法 Download PDFInfo
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- JP6494899B1 JP6494899B1 JP2019500606A JP2019500606A JP6494899B1 JP 6494899 B1 JP6494899 B1 JP 6494899B1 JP 2019500606 A JP2019500606 A JP 2019500606A JP 2019500606 A JP2019500606 A JP 2019500606A JP 6494899 B1 JP6494899 B1 JP 6494899B1
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- electroless
- plating
- plating film
- film
- semiconductor substrate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 110
- 239000000758 substrate Substances 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000007747 plating Methods 0.000 claims abstract description 198
- 238000000034 method Methods 0.000 claims abstract description 75
- 230000008569 process Effects 0.000 claims abstract description 52
- 239000003054 catalyst Substances 0.000 claims abstract description 36
- 238000005530 etching Methods 0.000 claims abstract description 26
- 238000005238 degreasing Methods 0.000 claims abstract description 11
- 238000002161 passivation Methods 0.000 claims description 32
- 239000007788 liquid Substances 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 239000010931 gold Substances 0.000 abstract 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 69
- 230000000052 comparative effect Effects 0.000 description 34
- 239000000243 solution Substances 0.000 description 23
- 229910000679 solder Inorganic materials 0.000 description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 7
- 238000007772 electroless plating Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 150000001879 copper Chemical class 0.000 description 6
- 238000006467 substitution reaction Methods 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910004613 CdTe Inorganic materials 0.000 description 3
- 229910018104 Ni-P Inorganic materials 0.000 description 3
- 229910018536 Ni—P Inorganic materials 0.000 description 3
- 239000008139 complexing agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005272 metallurgy Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910005642 SnTe Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005237 degreasing agent Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
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Abstract
Description
本出願は、2017年11月16日出願の日本出願第2017−221166号、および2018年9月5日出願の日本出願第2018−166131号に基づく優先権を主張し、前記日本出願に記載された全ての記載内容を援用するものである。
フリップチップでICと基板およびIC同士を接合するには、IC上に形成されたAl、Cu、Au等の電極パッドに、UBM(Under Bump Metallurgy アンダー・バンプ・メタラジー)を蒸着あるいはめっきで形成し、その上にSn−Ag、Sn−Ag−Cu等の鉛フリーはんだを印刷、ボール搭載あるいはめっきで形成する。これを同様に形成したICおよび基板上に加熱接合する方法が用いられている。
Al電極パッド上に無電解Niめっき皮膜を形成する方法としてはZnの置換めっきを用いたジンケート法が、Cu電極パッド上に無電解Niめっき皮膜を形成する方法としてはPd触媒法が広く用いられている。
電気めっきの場合、選択的にめっきするためにはフォトプロセスが必要となり、かつめっきされるべきAu電極パッドそれぞれに電流を流すための配線が必要となる上、枚葉毎の処理になるので、コストがかさみ、かつ生産性が低い問題があった。
[1]Au電極パッドを有し、前記Au電極パッド上に、無電解Niめっき皮膜/無電解Pdめっき皮膜/無電解Auめっき皮膜、または無電解Niめっき皮膜/無電解Auめっき皮膜を有する半導体基板。
[2]前記無電解Niめっき皮膜/無電解Pdめっき皮膜/無電解Auめっき皮膜、および無電解Niめっき皮膜/無電解Auめっき皮膜において、
無電解Niめっき皮膜の膜厚が1.5μm〜10μm、
無電解Auめっき皮膜の膜厚が0.01μm〜0.50μmであり、
前記無電解Niめっき皮膜/無電解Pdめっき皮膜/無電解Auめっき皮膜において、
無電解Pdめっき皮膜の膜厚が0.02μm〜0.50μmである
前記[1]に記載の半導体基板。
[3]前記無電解Niめっき皮膜がPを2質量%〜15質量%含有している前記[1]または[2]に記載の半導体基板。
[4]前記半導体基板はパシベーション膜を有し、
前記パシベーション膜は前記Au電極パッド上に形成されており、かつ前記Au電極パッドを露出する開口部を有しており、
前記開口部のAu電極パッド上に、無電解Niめっき皮膜/無電解Pdめっき皮膜/無電解Auめっき皮膜、または無電解Niめっき皮膜/無電解Auめっき皮膜を有し、
前記無電解Niめっき皮膜が形成されている領域において、前記Au電極パッドが、1nm以上エッチングされている前記[1]〜[3]のいずれか1項に記載の半導体基板。
[5]前記半導体基板が、化合物半導体基板、または酸化物半導体基板である前記[1]〜[4]のいずれか1項に記載の半導体基板。
[6]前記化合物半導体基板の化合物半導体が、II-VI族半導体、III-V族半導体、III-V族(窒化物系)半導体、IV-VI族半導体、IV-IV族半導体、I-III-VI族半導体、およびII-IV-V族半導体から選択されるいずれかである前記[5]に記載の半導体基板。
[7]前記[1]〜[6]のいずれか1項に記載の半導体基板の製造方法であって、以下の(1)〜(6)に記載の工程により、Au電極パッド上に無電解Niめっき皮膜/無電解Pdめっき皮膜/無電解Auめっき皮膜、または無電解Niめっき皮膜/無電解Auめっき皮膜を形成する半導体基板の製造方法。
(1)脱脂工程
(2)エッチング工程
(3)プレディップ工程
(4)Pd触媒付与工程
(5)無電解Niめっき工程
(6)無電解Pdめっき工程及び無電解Auめっき工程、
または、無電解Auめっき工程
[8]前記Pd触媒付与工程において、処理液を用い、Pd触媒付与を行う際の処理液の温度を20℃〜90℃とする前記[7]に記載の半導体基板の製造方法。
[9]前記エッチング工程において、Au電極パッド上のAuを深さ1nm以上エッチングする前記[7]または[8]に記載の半導体基板の製造方法。
尚、本発明において、「/」の記号は、各めっき処理工程によって形成された複数のめっき皮膜の構造を意味し、電極パッドからのめっきの順番によって各めっき皮膜の表記順位となる。
本発明の半導体基板は、以下の(1)〜(6)の工程により、Au電極パッド上に無電解Niめっき皮膜/無電解Pdめっき皮膜/無電解Auめっき皮膜、または無電解Niめっき皮膜/無電解Auめっき皮膜を形成することにより、製造することができる。
(1)脱脂工程
(2)エッチング工程
(3)プレディップ工程
(4)Pd触媒付与工程
(5)無電解Niめっき工程
(6)無電解Pdめっき工程及び無電解Auめっき工程、
または、無電解Auめっき工程
化合物半導体基板の化合物半導体としては、II-VI族半導体、III-V族半導体、III-V族(窒化物系)半導体、IV-VI族半導体、IV-IV族半導体、I-III-VI族半導体、II-IV-V族半導体等を挙げることができる。
II-VI族半導体としては、CdTe、CdZnTe、ZnTe、ZnO(酸化物半導体にも分類される)、ZnS、ZnSe、CdS、HgCdTe等を挙げることができる。
III-V族半導体としては、GaAs、GaP、AlAs、AlSb、InSb、InAs、GaAsP、InGaAs、InGaP、GaInAsP、AlGaP、AlGaAs、InP、InAlAs、AlGaInP等を挙げることができる。
III-V族(窒化物系)半導体としては、GaN、GaInN、AlGaN、AlGaInN、AlN等を挙げることができる。
IV-VI族半導体としては、SnTe、PbTe等を挙げることができる。
IV-IV族半導体としては、SiC、SiGe等を挙げることができる。
I-III-VI族半導体としては、CuGaS2、CuInS2、CuGaxIn1−xSe2等を挙げることができる。
II-IV-V族半導体としては、ZnSiP2、ZnSnAs2等を挙げることができる。
また、酸化物半導体基板の酸化物半導体としては、ZnO、Ga2O3、Cu2O等を挙げることができる。
エッチング及びプレディップを行うことにより、Au電極パッド上に、Pdの皮膜を形成することができ、次いで無電解Niめっき皮膜を形成することができる。
前記Au電極パッドとしては、公知の方法により形成されたものでよく、パッドの厚さは好ましくは0.05μm〜10μmである。
半導体基板のAu電極パッド上を清浄化するために、先ず、脱脂処理を行う。脱脂工程については、半導体基板に付着している汚れの種類、半導体基板の耐薬品性によって、公知の薬品から選択することができる。例えば、アルカリ脱脂等を挙げることができ、WBD200、WBD400(JX金属製)等の公知のアルカリ脱脂剤を用いることができる。
エッチングは、Auをエッチングできるシアン系水溶液やヨウ素水溶液を用いることができる。前記エッチング工程において、Au表面を活性化するために、Au電極パッド上のAuを深さ1nm以上エッチングすることが好ましく、1nm以上、50nm以下がより好ましい。エッチングする深さが1nm以上であれば表面の活性化が十分に得られる。50nm以上でも効果は発揮するが、あまり多くエッチングしても効果が変わらない。但し、Au電極パッドがエッチングされすぎ消失しないように濃度や時間をコントロールする必要がある。例えば、シアン系水溶液を用いる場合には、KCN=5g/Lを用い、30秒程度処理すればよい。
Au電極パッド上に無電解Niめっきを行なった後における、半導体基板の断面のSTEM像の概略図を図1Aに示す。図1Bは、図1Aにおける破線で囲った部分の部分拡大図であり、エッチング深さを示す図である。
前記半導体基板が、前記Au電極パッド12を露出する開口部を有するパシベーション膜(PV膜)11を有する場合、Au電極パッド12の露出されていない端部の上にはパシベーション膜11が形成されている。パシベーション膜11が形成されている部分(Au電極パッドが露出していない部分)は、エッチング処理を行ってもエッチングされない。従って、半導体基板の断面を観察し、パシベーション膜11が形成されている部分に対して、パシベーション膜が形成されていない部分のAu電極パッド12がどのくらい削れているかを測定することにより、Auエッチング量xを求めることができる。無電解Niめっきの際にAuがエッチングされることはないので、Auエッチング量はNiをめっきする前と後とで同じである。従って、Au電極パッド12上に無電解Niめっきを行ない、無電解Niめっき皮膜13を形成した後においても、半導体基板の断面をSTEM分析してパシベーション膜11が形成されている部分と形成されていない部分のAu電極パッド表面の高さを比較することにより、Auエッチング量(エッチングの深さ)xを測定することができる。
また、Auエッチング量は、無電解Auめっき皮膜を形成した後に測定しても良い。
また、パシベーション膜の形成やパシベーション膜に開口部を形成してAu電極パッドを露出する方法は、公知の方法、条件により行なえばよい。
プレディップは、Pd触媒付与の前に、触媒付与液とほぼ同じ酸濃度の水溶液に浸漬する処理である。プレディップの役割は、親水性を上げて触媒付与液中に含有されるPdイオンに対する付着性を向上したり、触媒付与液への水洗水の流入を避けて触媒付与液の繰り返し再使用を可能とするものである。プレディップ液は、塩酸や硫酸などの水溶液であり、Pd触媒付与液の酸によって異なる。また、プレディップ処理は室温で数十秒から数分浸漬すればよく、プレディップ処理後には水洗は行わない。
Pd触媒付与の処理液を用いてPdの皮膜を形成する方法として、エッチング及びプレディップを行うことにより、Au電極パッド上にPdの触媒を付与することが可能となる。
Pd触媒付与に関しては、本発明の半導体基板の製造方法では、Au電極パッドにめっき皮膜を安定的に形成する観点から、処理温度を20℃〜90℃とすることが好ましい。
Pd触媒付与の処理液としては、市販のものであれば使用することができるが、使用温度(20℃〜90℃)で安定であることが好ましく、Pd源としてのPd塩、塩酸或いは硫酸、錯化剤等を含有することが好ましい。
Pd塩としては、塩化パラジウム、硫酸パラジウム、酢酸パラジウム等を用いることができる。Pd塩の濃度としては、処理液中、Pd金属として5ppm〜200ppmであることが好ましく、20ppm〜100ppmであることがより好ましい。
塩酸或いは硫酸としては、濃塩酸或いは濃硫酸として50ml/L〜150ml/L含有することが好ましい。
また、錯化剤としては塩化アンモニウム、硫酸アンモニウム等を用いることができ、1g/L〜10g/L含有することが好ましい。
また、処理時間が30秒以上であると、その上に形成する無電解Niめっきが安定的に析出しやすいので30秒以上とすることが好ましい。生産効率を考えると処理時間の上限を1800秒とすることが好ましい。
処理方法としては、Au電極パッドが、20℃〜90℃の処理液に30秒以上接触していることが好ましく、例えばAu電極パッドを前記処理液に浸漬することが好ましく、前記処理液を無電解Pdめっき液として用いた無電解めっき法が好ましい。
本発明の半導体基板の製造方法は、前記Pd触媒付与工程の後に、無電解Niめっき工程を有する。
本発明に用いることができる無電解Niめっきは特に限定されるものではないが、Ni−P、Ni−P−B、Ni−Bめっきがよく用いられる。
無電解Niめっきは、無電解Ni−Pめっき、無電解Ni−P−Bめっきであることが好ましく、無電解Ni−Pめっきであることがより好ましい。得られるNiめっき皮膜は、Pを15質量%以下含有していることが好ましく、2質量%〜15質量%含有していることがより好ましい。
Pが15質量%以下であるとPdめっきやAuめっきが析出しやすくなる。
Niめっき皮膜におけるP濃度、各めっき皮膜の厚さは、試料の断面のSTEM像のエネルギー分散型X線分光法(EDX)による元素分析により求めることができる。
本発明の半導体基板は、Au電極パッド上に無電解Niめっき皮膜/無電解Pdめっき皮膜/無電解Auめっき皮膜、または無電解Niめっき皮膜/無電解Auめっき皮膜、を有する。
前記無電解Auめっき皮膜の形成は、無電解置換Auめっき/無電解還元Auめっきの2段としても良い。
無電解Auめっき液としては、置換Auめっき液と還元Auめっき液がある。置換Auめっき液としては、例えば、JX金属製FA−210、FA−500、FA−501、CF−500、CF−500−SS等が挙げられる。この中で、FA−210はNi/Pd/Au仕様の置換Auめっき液である。一方、FA−500、FA−501、CF−500、CF−500−SSはNi/Au仕様の置換Auめっき液である。還元Auめっき液は、例えば、JX金属製RAP−13を使用することができる。
また、無電解Pdめっき液としては、例えば、JX金属製CA−400等が挙げられ、好ましく用いることができる。
Au膜厚に関しては、置換Auめっきでは膜厚に制限がでてくる。Ni/Pd/Au仕様の場合は、0.03μm、Ni/Au仕様の場合は、0.05μmで成膜がほぼ止まるので、それ以上の膜厚が必要な場合は還元Auめっきを行い厚膜化する。
上記めっき皮膜の膜厚の測定は、電極パッド中央付近の、めっき皮膜の表面・界面が電極パッドと平行な面となる部分の膜厚を測定した。
以下の電極パッド及びパシベーション膜を有するGaAsウェハを用いて、下記表1に記載のプロセス及び条件により無電解めっきを実施し、半導体基板を得た。
GaAsウェハ
・電極:Au電極パッド、膜厚1μm、パッド開口直径80μm円形
・パシベーション膜:SiN、0.5μm厚 + ポリイミド、3μm厚
表1において、「○」は、その処理を行ったことを示す。
また、比較例2は、一般的なAlパッドで使用されているジンケートプロセスの前処理で、脱脂、エッチングを行った後、プレディップ、Pd触媒付与に変えて、酸浸漬、一次ジンケート処理、酸浸漬、二次ジンケート処理を行い、次に無電解Niめっきを行ったものである。酸浸漬は30%硝酸を用い、一次ジンケート処理及び二次ジンケート処理は、表1に記載の条件で行った。
めっき後の断面STEM観察によりAuエッチング量を求めた。前記Au電極パッドおよびパシベーション膜を有するGaAsウェハは、Au電極パッドを形成した基板の上面にパシベーション膜を形成した後、パシベーション膜に、前記Au電極パッドを露出する開口部(直径80μm)を形成したものであり、Au電極パッドの露出されていない端部の上にはパシベーション膜が形成されている。GaAsウェハのパシベーション膜が形成された部分(開口されていない部分)は、エッチング後においてもAuがエッチングされない。従って、Au電極パッドの端部の断面を観察し、パシベーション膜が形成されていた部分(開口されていない部分)に対して、パシベーション膜が形成されていない部分(パッド開口している部分)のAuがどのくらい削れているかを測定することにより、Auエッチング量を求めた。
また、EDX分析によりNi皮膜中のP濃度を測定した。
その結果を表1に併記する。
また、はんだシェア試験を実施し、破壊界面からめっきの密着性を評価した。
はんだ特性の結果は、リフロー1回のみの場合と5回の場合のどちらも同じ結果となった。
リフロー加熱条件
温度:ピークトップ265℃、260℃以上で40秒加熱
雰囲気:窒素雰囲気(酸素濃度:600ppm〜800ppm)
使用はんだボール:Sn−3%Ag−0.5%Cu(150μm径)
はんだシェア試験条件
はんだシェア速度:100μm/sec
はんだシェア高さ:めっき/はんだ接合面から10μm
実施例1〜実施例11、比較例1、及び比較例2において、前記GaAsウェハの代わりに、以下の電極パッド及びパシベーション膜を有するSiCウェハを用いた以外は実施例1〜実施例11、比較例1、及び比較例2と同様にして、実施例12〜実施例22、比較例3、及び比較例4の半導体基板を得、実施例1と同様に評価した。その結果、実施例1〜実施例11、比較例1、及び比較例2と同様な評価結果が得られた。
SiCウェハ
・電極:Au電極パッド、膜厚1μm、
パッド開口1200μm×800μm長方形
・パシベーション膜:SiN、1.0μm厚 + ポリイミド、5μm厚
実施例1〜実施例11、比較例1、及び比較例2において、前記GaAsウェハの代わりに、以下の電極パッド及びパシベーション膜を有する、Si基板上にGaNのエピタキシャル膜を形成したエピタキシャルウェハを用いた以外は実施例1〜実施例11、比較例1、及び比較例2と同様にして、実施例23〜実施例33、比較例5、及び比較例6の半導体基板を得、実施例1と同様に評価した。その結果、実施例1〜実施例11、比較例1、及び比較例2と同様な評価結果が得られた。
Si基板上にGaNエピタキシャル膜を形成したエピタキシャルウェハ
・電極:Au電極パッド、膜厚1.5μm、
パッド開口900μm×600μm長方形
・パシベーション膜:SiN、1.0μm厚 + ポリイミド、5μm厚
実施例1〜実施例11、比較例1、及び比較例2において、前記GaAsウェハの代わりに、以下の電極パッド及びパシベーション膜を有する、サファイア基板上にGaNのエピタキシャル膜を形成したエピタキシャルウェハを用いた以外は実施例1〜実施例11、比較例1、及び比較例2と同様にして、実施例34〜実施例44、比較例7、及び比較例8の半導体基板を得、実施例1と同様に評価した。その結果、実施例1〜実施例11、比較例1、及び比較例2と同様な評価結果が得られた。
サファイア基板上にGaNエピタキシャル膜を形成したエピタキシャルウェハ
・電極:Au電極パッド、膜厚0.5μm、
パッド開口60μm×60μm正方形
・パシベーション膜:SiN、0.5μm厚
実施例1〜実施例11、比較例1、及び比較例2において、前記GaAsウェハの代わりに、以下の電極パッド及びパシベーション膜を有するCdTeウェハを用いた以外は実施例1〜実施例11、比較例1、及び比較例2と同様にして、実施例45〜実施例55、比較例9、及び比較例10の半導体基板を得、実施例1と同様に評価した。その結果、実施例1〜実施例11、比較例1、及び比較例2と同様な評価結果が得られた。
CdTeウェハ
・電極:Au電極パッド、膜厚0.1μm、
パッド開口直径150μm円形
・パシベーション膜:ポジ型フォトレジスト3μm厚
12 Au電極パッド
13 無電解Niめっき皮膜
x Auエッチング量
Claims (9)
- Au電極パッドを有し、前記Au電極パッド上に、無電解Niめっき皮膜、無電解Pdめっき皮膜および無電解Auめっき皮膜をこの順に有するか、または無電解Niめっき皮膜および無電解Auめっき皮膜をこの順に有する半導体基板。
- 前記無電解Niめっき皮膜、前記無電解Pdめっき皮膜および前記無電解Auめっき皮膜がこの順に形成されためっき皮膜、および、前記無電解Niめっき皮膜および前記無電解Auめっき皮膜がこの順に形成されためっき皮膜において、
前記無電解Niめっき皮膜の膜厚が1.5μm〜10μm、
前記無電解Auめっき皮膜の膜厚が0.01μm〜0.50μmであり、
前記無電解Niめっき皮膜、前記無電解Pdめっき皮膜および前記無電解Auめっき皮膜がこの順に形成されためっき皮膜において、
前記無電解Pdめっき皮膜の膜厚が0.02μm〜0.50μmである
請求項1に記載の半導体基板。 - 前記無電解Niめっき皮膜がPを2質量%〜15質量%含有している請求項1または2に記載の半導体基板。
- 前記半導体基板はパシベーション膜を有し、
前記パシベーション膜は前記Au電極パッド上に形成されており、かつ前記Au電極パッドを露出する開口部を有しており、
前記開口部のAu電極パッド上に、無電解Niめっき皮膜、無電解Pdめっき皮膜および無電解Auめっき皮膜をこの順に有するか、または無電解Niめっき皮膜、無電解Auめっき皮膜をこの順に有し、
前記無電解Niめっき皮膜が形成されている領域において、前記Au電極パッドが、1nm以上エッチングされている請求項1〜3のいずれか1項に記載の半導体基板。 - 前記半導体基板が、化合物半導体基板、または酸化物半導体基板である請求項1〜4のいずれか1項に記載の半導体基板。
- 前記化合物半導体基板の化合物半導体が、II−VI族半導体、III−V族半導体、III−V族(窒化物系)半導体、IV−VI族半導体、IV−IV族半導体、I−III−VI族半導体、およびII−IV−V族半導体から選択されるいずれかである請求項5に記載の半導体基板。
- 請求項1〜6のいずれか1項に記載の半導体基板の製造方法であって、以下の(1)〜(6)に記載の工程により、Au電極パッド上に、無電解Niめっき皮膜、無電解Pdめっき皮膜および無電解Auめっき皮膜をこの順に形成するか、または無電解Niめっき皮膜および無電解Auめっき皮膜をこの順に形成する半導体基板の製造方法。
(1)脱脂工程
(2)エッチング工程
(3)プレディップ工程
(4)Pd触媒付与工程
(5)無電解Niめっき工程
(6)無電解Pdめっき工程及び無電解Auめっき工程、
または、無電解Auめっき工程 - 前記Pd触媒付与工程において、処理液を用い、Pd触媒付与を行う際の処理液の温度を20℃〜90℃とする請求項7に記載の半導体基板の製造方法。
- 前記エッチング工程において、Au電極パッド上のAuを深さ1nm以上エッチングする請求項7または8に記載の半導体基板の製造方法。
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JP2011003858A (ja) * | 2009-06-22 | 2011-01-06 | Seiko Epson Corp | 半導体装置の製造方法 |
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