TWI587478B - Semiconductor device and method for manufacturing semiconductor device - Google Patents

Semiconductor device and method for manufacturing semiconductor device Download PDF

Info

Publication number
TWI587478B
TWI587478B TW104126111A TW104126111A TWI587478B TW I587478 B TWI587478 B TW I587478B TW 104126111 A TW104126111 A TW 104126111A TW 104126111 A TW104126111 A TW 104126111A TW I587478 B TWI587478 B TW I587478B
Authority
TW
Taiwan
Prior art keywords
electrode
semiconductor substrate
insulating film
range
interlayer insulating
Prior art date
Application number
TW104126111A
Other languages
English (en)
Chinese (zh)
Other versions
TW201624670A (zh
Inventor
添野明高
Original Assignee
豐田自動車股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 豐田自動車股份有限公司 filed Critical 豐田自動車股份有限公司
Publication of TW201624670A publication Critical patent/TW201624670A/zh
Application granted granted Critical
Publication of TWI587478B publication Critical patent/TWI587478B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW104126111A 2014-08-22 2015-08-11 Semiconductor device and method for manufacturing semiconductor device TWI587478B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014169454A JP6036765B2 (ja) 2014-08-22 2014-08-22 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201624670A TW201624670A (zh) 2016-07-01
TWI587478B true TWI587478B (zh) 2017-06-11

Family

ID=55350516

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104126111A TWI587478B (zh) 2014-08-22 2015-08-11 Semiconductor device and method for manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US9941273B2 (enExample)
JP (1) JP6036765B2 (enExample)
KR (1) KR101868730B1 (enExample)
CN (1) CN106575668B (enExample)
DE (1) DE112015003835B4 (enExample)
TW (1) TWI587478B (enExample)
WO (1) WO2016027564A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6299789B2 (ja) * 2016-03-09 2018-03-28 トヨタ自動車株式会社 スイッチング素子
JP6673088B2 (ja) * 2016-08-05 2020-03-25 トヨタ自動車株式会社 半導体装置
JP6784164B2 (ja) * 2016-12-15 2020-11-11 株式会社豊田中央研究所 半導体装置
DE102017118665A1 (de) * 2017-08-16 2019-02-21 Infineon Technologies Ag Rc-igbt
JP6776205B2 (ja) * 2017-09-20 2020-10-28 株式会社東芝 半導体装置の製造方法
US11251046B2 (en) * 2018-02-02 2022-02-15 Mitsubishi Electric Corporation Method of manufacturing semiconductor device
JP6964538B2 (ja) 2018-02-28 2021-11-10 株式会社 日立パワーデバイス 半導体装置および電力変換装置
US11417762B2 (en) 2019-06-26 2022-08-16 Skyworks Solutions, Inc. Switch with integrated Schottky barrier contact
JP7585646B2 (ja) 2019-08-13 2024-11-19 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102021104532B4 (de) * 2021-02-25 2025-06-18 Infineon Technologies Ag Mesa-Kontakt für MOS-gesteuerte Leistungshalbleitervorrichtung undVerfahren zum Herstellen einer Leistungshalbleitervorrichtung
JP7701610B2 (ja) * 2021-09-02 2025-07-02 ミネベアパワーデバイス株式会社 半導体装置、半導体装置の製造方法、電力変換装置
CN113921614B (zh) * 2021-12-13 2022-03-25 捷捷微电(上海)科技有限公司 一种半导体功率器件结构及其制造方法
CN117012830B (zh) * 2023-08-18 2026-01-30 广微集成技术（深圳）有限公司 一种屏蔽栅沟槽vdmos器件及其制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100314707A1 (en) * 2009-06-12 2010-12-16 Yedinak Joseph A Reduced Process Sensitivity of Electrode-Semiconductor Rectifiers
US20120146090A1 (en) * 2010-12-14 2012-06-14 Alpha And Omega Semiconductor Incorporated Self aligned trench mosfet with integrated diode
TW201426882A (zh) * 2012-12-21 2014-07-01 萬國半導體股份有限公司 用於負載開關和直流－直流器件的高密度ｍｏｓｆｅｔ的器件結構及其制備方法
TW201427022A (zh) * 2012-12-21 2014-07-01 萬國半導體股份有限公司 帶有自對准有源接觸的基於高密度溝槽的功率ｍｏｓｆｅｔ及其制備方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593620B1 (en) * 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6998678B2 (en) * 2001-05-17 2006-02-14 Infineon Technologies Ag Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode
AU2003260899A1 (en) * 2002-10-04 2004-04-23 Koninklijke Philips Electronics N.V. Power semiconductor devices
JP4406535B2 (ja) * 2003-01-14 2010-01-27 新電元工業株式会社 ショットキーダイオード付きトランジスタ
JP4799829B2 (ja) * 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
JP4829473B2 (ja) 2004-01-21 2011-12-07 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置およびその製造方法
JP4935160B2 (ja) * 2006-04-11 2012-05-23 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP4292427B2 (ja) * 2006-12-04 2009-07-08 サンケン電気株式会社 絶縁ゲート型電界効果トランジスタ及びその製造方法
JP5511308B2 (ja) * 2009-10-26 2014-06-04 三菱電機株式会社 半導体装置およびその製造方法
JP2011199060A (ja) * 2010-03-19 2011-10-06 Toshiba Corp 半導体装置及びその製造方法
WO2011136272A1 (ja) * 2010-04-28 2011-11-03 日産自動車株式会社 半導体装置
WO2013014943A2 (en) 2011-07-27 2013-01-31 Kabushiki Kaisha Toyota Chuo Kenkyusho Diode, semiconductor device, and mosfet
US9608071B2 (en) * 2012-02-14 2017-03-28 Toyota Jidosha Kabushiki Kaisha IGBT and IGBT manufacturing method
JP2014157896A (ja) * 2013-02-15 2014-08-28 Toyota Central R&D Labs Inc 半導体装置とその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100314707A1 (en) * 2009-06-12 2010-12-16 Yedinak Joseph A Reduced Process Sensitivity of Electrode-Semiconductor Rectifiers
US20120146090A1 (en) * 2010-12-14 2012-06-14 Alpha And Omega Semiconductor Incorporated Self aligned trench mosfet with integrated diode
TW201426882A (zh) * 2012-12-21 2014-07-01 萬國半導體股份有限公司 用於負載開關和直流－直流器件的高密度ｍｏｓｆｅｔ的器件結構及其制備方法
TW201427022A (zh) * 2012-12-21 2014-07-01 萬國半導體股份有限公司 帶有自對准有源接觸的基於高密度溝槽的功率ｍｏｓｆｅｔ及其制備方法

Also Published As

Publication number Publication date
KR101868730B1 (ko) 2018-06-18
TW201624670A (zh) 2016-07-01
KR20160138308A (ko) 2016-12-02
WO2016027564A1 (ja) 2016-02-25
US9941273B2 (en) 2018-04-10
CN106575668B (zh) 2019-09-03
DE112015003835T5 (de) 2017-05-11
US20170040316A1 (en) 2017-02-09
JP6036765B2 (ja) 2016-11-30
JP2016046377A (ja) 2016-04-04
CN106575668A (zh) 2017-04-19
DE112015003835B4 (de) 2020-10-15

Similar Documents

Publication Publication Date Title
TW201624670A (zh) 半導體裝置及半導體裝置之製造方法
US8587054B2 (en) Trench MOSFET with resurf stepped oxide and diffused drift region
EP2755237B1 (en) Trench MOS gate semiconductor device and method of fabricating the same
US9530882B1 (en) Trench MOSFET with shielded gate and diffused drift region
JP4727964B2 (ja) 半導体装置
US8648413B2 (en) Super-junction trench MOSFET with multiple trenched source-body contacts
US9024330B2 (en) Semiconductor device and manufacturing method thereof
US20170317207A1 (en) Trench mosfet structure and layout with separated shielded gate
JP6193163B2 (ja) 絶縁ゲート型半導体装置
JP5015488B2 (ja) 半導体装置
US9613809B2 (en) Method of manufacturing silicon carbide semiconductor device
TW201901959A (zh) 半導體裝置及半導體裝置之製造方法
TW201511271A (zh) 半導體裝置與其形成方法
US9947750B2 (en) Silicon carbide semiconductor switching device and method of manufacturing silicon carbide semiconductor switching device
JP7315311B2 (ja) 電界効果トランジスタ及び電界効果トランジスタを製造する方法
TWI591828B (zh) Semiconductor device and method of manufacturing the same
JP7371724B2 (ja) 半導体装置とその製造方法
CN106158944B (zh) 碳化硅静电感应晶体管以及用于制作碳化硅静电感应晶体管的工艺
JP7159949B2 (ja) 半導体装置
US9530881B2 (en) Semiconductor device, and method of manufacturing the same
JP6988262B2 (ja) 窒化物半導体装置とその製造方法
JP2013008783A (ja) 半導体装置の製造方法、半導体装置
JP7380236B2 (ja) 半導体装置
JP7190955B2 (ja) 半導体装置の製造方法
JP6680161B2 (ja) スイッチング素子の製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees