TWI585867B - A method of manufacturing a bonding table, a bonding apparatus and a bonded substrate - Google Patents

A method of manufacturing a bonding table, a bonding apparatus and a bonded substrate Download PDF

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Publication number
TWI585867B
TWI585867B TW103133327A TW103133327A TWI585867B TW I585867 B TWI585867 B TW I585867B TW 103133327 A TW103133327 A TW 103133327A TW 103133327 A TW103133327 A TW 103133327A TW I585867 B TWI585867 B TW I585867B
Authority
TW
Taiwan
Prior art keywords
substrate
adsorption
region
control valve
bonding
Prior art date
Application number
TW103133327A
Other languages
English (en)
Chinese (zh)
Other versions
TW201521122A (zh
Inventor
Emi Matsui
Konosuke Hayashi
Takahiro Kanai
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Publication of TW201521122A publication Critical patent/TW201521122A/zh
Application granted granted Critical
Publication of TWI585867B publication Critical patent/TWI585867B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Fluid Mechanics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW103133327A 2013-09-25 2014-09-25 A method of manufacturing a bonding table, a bonding apparatus and a bonded substrate TWI585867B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013198584 2013-09-25

Publications (2)

Publication Number Publication Date
TW201521122A TW201521122A (zh) 2015-06-01
TWI585867B true TWI585867B (zh) 2017-06-01

Family

ID=52743378

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103133327A TWI585867B (zh) 2013-09-25 2014-09-25 A method of manufacturing a bonding table, a bonding apparatus and a bonded substrate

Country Status (7)

Country Link
US (1) US10586727B2 (ja)
EP (1) EP3051573A4 (ja)
JP (1) JP6348500B2 (ja)
KR (1) KR101898355B1 (ja)
CN (1) CN105612598B (ja)
TW (1) TWI585867B (ja)
WO (1) WO2015046243A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6244188B2 (ja) * 2013-11-27 2017-12-06 東京エレクトロン株式会社 接合装置、接合方法および接合システム
JP6568781B2 (ja) * 2015-04-04 2019-08-28 東京エレクトロン株式会社 基板保持方法、基板保持装置、処理方法及び処理装置
KR102041044B1 (ko) * 2018-04-30 2019-11-05 피에스케이홀딩스 주식회사 기판 지지 유닛
KR102468794B1 (ko) 2018-07-06 2022-11-18 삼성전자주식회사 웨이퍼 본딩 장치 및 이를 이용한 웨이퍼 본딩 시스템
KR102648711B1 (ko) 2018-09-20 2024-03-20 삼성전자주식회사 기판 본딩 장치 및 그를 이용한 기판 본딩 방법
CN111081817A (zh) * 2019-12-26 2020-04-28 吕晨康 一种太阳能电池板组件层压敷设装置
JP7355687B2 (ja) 2020-03-19 2023-10-03 キオクシア株式会社 貼合装置および貼合方法
CN112563184A (zh) * 2021-02-09 2021-03-26 北京中硅泰克精密技术有限公司 承载装置和半导体工艺设备
WO2022171305A1 (en) * 2021-02-15 2022-08-18 Applied Materials Italia S.R.L. System for handling substrates, gripper for lifting a substrate from a surface, method for gripping substrates using a gripper

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480617B (en) * 1997-08-27 2002-03-21 Canon Kk Substrate processing method, and substrate fabrication method
JP2005302858A (ja) * 2004-04-08 2005-10-27 Nikon Corp ウェハの接合装置
TW201304034A (zh) * 2011-04-26 2013-01-16 尼康股份有限公司 基板保持裝置、基板貼合裝置、基板保持方法、基板貼合方法、積層半導體裝置及疊合基板

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JPS61145829A (ja) 1984-12-20 1986-07-03 Nippon Mining Co Ltd モザイク状スパツタリングタ−ゲツトとその製造方法
JPS61145839A (ja) 1984-12-20 1986-07-03 Toshiba Corp 半導体ウエ−ハの接着方法および接着治具
JPS62221130A (ja) * 1986-03-24 1987-09-29 Toshiba Corp 真空チヤツク装置
JPH06244269A (ja) * 1992-09-07 1994-09-02 Mitsubishi Electric Corp 半導体製造装置並びに半導体製造装置におけるウエハ真空チャック装置及びガスクリーニング方法及び窒化膜形成方法
JPH10242255A (ja) 1997-02-28 1998-09-11 Kyocera Corp 真空吸着装置
JP2001024051A (ja) * 1999-07-09 2001-01-26 Tokyo Seimitsu Co Ltd ウェーハ吸着パッド
CN1965389B (zh) 2004-06-09 2011-08-10 尼康股份有限公司 基板保持装置、具备其之曝光装置及方法、元件制造方法
JP2006201330A (ja) 2005-01-19 2006-08-03 Fujitsu Ltd 貼合せ基板製造装置及び貼合せ基板製造方法
KR20060122557A (ko) 2005-05-27 2006-11-30 삼성전자주식회사 반도체 제조 장치의 진공 척
JP4899879B2 (ja) * 2007-01-17 2012-03-21 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5016523B2 (ja) * 2008-02-29 2012-09-05 株式会社日本セラテック 真空チャック
DE102008018536B4 (de) * 2008-04-12 2020-08-13 Erich Thallner Vorrichtung und Verfahren zum Aufbringen und/oder Ablösen eines Wafers auf einen/von einem Träger
JP2012186245A (ja) * 2011-03-04 2012-09-27 Tokyo Electron Ltd 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JP5877005B2 (ja) * 2011-07-29 2016-03-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板保持装置、および、基板保持方法
JP5929035B2 (ja) * 2011-08-10 2016-06-01 富士通セミコンダクター株式会社 基板搬送装置、半導体製造装置、及び基板搬送方法
JP2013120902A (ja) * 2011-12-08 2013-06-17 Tokyo Electron Ltd 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480617B (en) * 1997-08-27 2002-03-21 Canon Kk Substrate processing method, and substrate fabrication method
JP2005302858A (ja) * 2004-04-08 2005-10-27 Nikon Corp ウェハの接合装置
TW201304034A (zh) * 2011-04-26 2013-01-16 尼康股份有限公司 基板保持裝置、基板貼合裝置、基板保持方法、基板貼合方法、積層半導體裝置及疊合基板

Also Published As

Publication number Publication date
CN105612598A (zh) 2016-05-25
WO2015046243A1 (ja) 2015-04-02
CN105612598B (zh) 2019-09-24
JP6348500B2 (ja) 2018-06-27
US20160225655A1 (en) 2016-08-04
EP3051573A4 (en) 2017-05-03
KR101898355B1 (ko) 2018-09-12
KR20160055921A (ko) 2016-05-18
US10586727B2 (en) 2020-03-10
TW201521122A (zh) 2015-06-01
EP3051573A1 (en) 2016-08-03
JPWO2015046243A1 (ja) 2017-03-09

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