M410333 五、新型說明： 【新型所屬之技術領域】 本創作是有關於一種裝載裝置，且特別是有關於一種 用以將晶圓裝載至平台上之裝載裝置。 【先前技術】 傳統的晶圓研磨製程係以一機械手臂裝載欲研磨之 晶圓至一旋轉平台（turntable)上，或於研磨之後將晶圓 取出，以進行晶圓清洗之步驟。旋轉平台可固定晶圓並帶 動晶圓旋轉。當晶圓旋轉時，可加入適當的化學研磨劑 (grinding reagent)，並以研磨塾（grinding pad)對 晶圓進行機械研磨，以將晶圓之表面的凹痕或膜層予以磨 平或平坦化。 然而，晶圓以機械手臂移動並定位於旋轉平台時，若 晶圓翹曲或變形的幅度太大，晶圓將無法緊密地貼合於旋 轉平台上，以致於晶圓的周圍與其下方的旋轉平台之間的 間隙過大，因而無法達到真空吸附晶圓的目的。 【新型内容】 本創作係有關於一種裝載裝置，可使晶圓的周圍與其 下方的平台緊密接觸並吸附在平台上。 根據本創作之一方面，提出一種裝載裝置，用以將一 晶圓裝載至一平台上。裝載裝置包括一機械手臂以及一抵 壓單元。機械手臂包括一轉軸、一吸附頭以及一擷取臂， 轉軸位於擷取臂的一第一端，而吸附頭位於擷取臂的一第 3 M410333 二端，其中吸附頭吸附晶圓，且擷取臂以轉軸為中心旋轉 並移動晶圓至平台上方，以使晶圓定位於平台上。抵壓單 元以吸附頭為中心，環狀排列於擷取臂上，其中晶圓以機 械手#移動至平台上時，抵壓單元均等地垂直抵麼晶圓之 周圍，以使晶圓之周圍與平台緊密接觸並吸附在平台上。 為了對本創作之上述及其他方面有更佳的瞭解，下文 特舉較佳實施例，並配合所附圖式，作詳細說明如下： 【實施方式】 本創作較佳實施例之裝載裝置，係用於半導體基材之 研磨製程或平坦化製程中，半導體基材例如為石夕晶圓，其 可應用於各種包含主動元件或被動元件（active 〇Γ passive elements)、數位電路或類比電路（digital oj· analog circuits)等積體電路的電子元件（electr〇nic components)中’例如是有關於光電元件（〇pt〇 electronic devices)、微機電糸統（Micro Electro Mechanical System; MEMS)、微流體糸統（micro fluidic systems)、或利用熱、 光線及壓力等物理量變化來測量的物理感測器（Physica 1 Sensor)之半導體基材。特別是可選擇使用晶圓級封裝 (wafer scale package; WSP)製程對影像感測元件、發光 二極體（light-emitting diodes; LEDs)、太陽能電池 (solar cells)、射頻元件（RF circuits)、加速計 (accelerators)、陀螺儀（gyroscopes)、微制動器（micro actuators)、表面聲波元件（surface acoustic wave devices)、壓力感測器（process sensors)或喷墨頭（ink M41U333 printer* heads)等半導體晶片進行縣之半導體基材。 其中上述晶圓級封裝製程主要係指在晶圓階段完成 封裝步驟後，再予以切割成獨立的封裝體，然而，在一特 定實施例中’例如將已分離之半導體晶片重新分布在一承 載B曰圓上，再進行封裝製程，亦可稱之為晶圓級封裝製 程。另外’上述晶圓級縣製程亦適用於藉堆疊⑷砂） 方式安排具有積體電路之多片晶圓，以形成多層積體電路 (ti layer integrated circuit devices)之晶片封褒 • 體。 睛參照第1及2圖’其中第！圖繪示依照_實施例之 裝載裝置之侧視示意圖，第2圖繪示依照-實施例之裝載 裝置之俯，示意圖。裝載裝置100包括一機械手臂110以 及抵壓單元120。機械手臂11〇用以操取一晶圓w並移 動曰:曰圓w至-製程平台102上（如第2圖所示，以虛線表 不晶圓W及裝載裝置100的移動狀態），以進行一製程步 驟機械手臂110包括一轉軸112、一吸附頭116以及一 擷取臂114。轉軸112位於擷取臂114的一第一端E1,而 吸附頭116位於擷取臂114的一第二端E2。當完成製程步 驟之後，自動控制機械手臂11〇回到製程平台1〇2的上 方，重新裝載晶圓w並移動，以回到原來的承靠平台工μ 上（如第1圖所示）。 在第1圖中，裝載裝置100更包括一驅動器130。機 械手臂110固定在驅動器130上。驅動器130可藉由馬達 或傳動齒輪傳送動力至機械手臂110,以使機械手臂11〇 可在一預定範圍内旋轉、前後移動或上下移動等。在一實 5 M410333 施例中，榻取臂的一端藉由轉軸112固定在驅動器130 上，以使擷取臂114能以轉轴112為中心旋轉，並可藉由 控制旋轉的角度’使操取臂114的另-端位於晶圓w的上 方’如第1圖所示。接著，藉由控制向下移動的距離，使 摘取# 114上的吸附頭Mg位於晶圓评上，讓吸附頭I” 能吸附晶圓W。 此外，裝載裝置1〇〇更包括一吸真空裝置14〇。吸附 頭116内具有至少一通道I〗6a，其一端可經由一外部管體 118 (或位於擷取臂114内的一内部管體）連接至吸真空 裝置140，以產生吸力。當吸真空裝置14〇作動時，吸附 頭116的通道116a内形成真空狀態而使晶圓w吸附在吸 附頭116上。當吸真空裝置14〇以一洩壓閥（圖未繪示） 解除通道116a内的真空狀態時，吸附頭116與晶圓w即 可自動刀離。如第2圖所示，當吸附頭116吸附晶圓w， 且擷取臂114以轉軸112為中心旋轉並移動晶圓w至製程 平台102上方時，藉由吸附頭116與晶圓w分離以使晶 圓w位於製程平台102上。在一實施例中製程平台 具有真空吸附之通道102a，可將晶圓w平穩地吸附在製程 平台102上。此外，製程平台1〇2下方具有旋轉軸（圖未 繪不）可同步帶動製程平台1〇2及晶圓w旋轉，以進行類 似研磨製程或平坦化製程等步驟。 此外，抵壓單元12〇包括多個抵壓件丨22。各個抵壓 件122包括一抵壓部124以及一活動臂126。抵壓件122 可為獨立的元件或相互連動的元件，其數量可為二個、四 個或/、個，本創作不加以限制。例如，當一抵壓件1 &壓 M410333 持於晶圓W之一側時，晶圓W的另一側相對有另一抵壓件 122壓持，以使晶圓W之相對兩側受力均等，如第1圖所 示之實施例。另外，在第2圖所示之實施例中，多個抵壓 件122以吸附頭116為中心，呈環狀且等間距排列，以使 晶圓W之周圍受到環狀排列之抵壓件122所壓持。因此， 當晶圓W以吸附頭116吸附，並以擷取臂114移動至製程 • 平台102上時，抵壓單元120均等地垂直抵壓晶圓W之周 . 圍，以使晶圓W之周圍與製程平台102緊密接觸並吸附在 • 製程平台102上。也就是說，晶圓W之周圍不會因翹曲或 變形而無法緊密地貼合於製程平台102上。 在一實施例中，抵壓部124之抵壓面S1與晶圓W之 周圍接觸，且具有耐磨性佳、耐腐蝕且摩擦係數低等特 性，其材質可為聚四氟乙烯（Polytetraf luoroethene， 簡稱PTFE)。此外，各個抵壓件122的抵壓部124可藉由 各自的活動臂126固定在擷取臂114的固定桿117上，且 • 共平面地抵壓晶圓W之周圍，以使晶圓W之周圍與製程平 ·. 台102緊密接觸並吸附在製程平台102上。另外，承靠平 台上的承靠墊（圖未繪示）的尺寸可加大，以使吸附頭116 吸附晶圓W時，晶圓W下方的承靠墊能提供支撐力，其對 應於抵壓件122垂直下壓時所產生的作用力，並且避免晶 圓W產生變形。 請參考第3A及3B圖，其分別繪示依照另一實施例之 裝載裝置的侧面示意圖以及俯視示意圖。裝載裝置200包 括一機械手臂210以及一抵壓單元220。機械手臂210用 以擷取一晶圓W並移動晶圓W至一平台202上，以進行一 7 M410333 製程步驟。有關機械手臂210之轉軸、擷取臂214以及吸 附頭216的操作方式如第1及2圖所示之實施例，在此不 再贅述。 本實施例與上述實施例不同的是，抵壓單元2 2 0包括 多個抵壓件222、一環狀板224以及多個彈簧226。各個 抵壓件222以環狀板224支撐並垂直抵壓於晶圓w之周 圍。在一實施例中，環狀板224固定在擷取臂214上，環 狀板224與平台202平行並保持一適當間距，且環狀板224 具有多個環狀排列的孔。此外，各個抵壓件222具有尺寸 大於環狀板224之孔徑的第一固定部pi以及第二固定部 P2。各個抵壓件122的桿部222a連接於第一固定部P1與 第二固定部P2之間，並穿過環狀板224之孔224a，以使 各個抵壓件222以環狀板224支撐並垂直於晶圓w之周 圍。在一實施例中，抵壓件222以第二固定部P2壓持於 晶圓W之周圍，且第二固定部p2之抵壓面S2具有耐磨性 佳、耐腐蝕且摩擦係數低等特性，其材質可為聚四氟乙烯 (PTFE)。 此外’各個彈簧226套設於抵壓件222的桿部222a， 並可彈性支撐於各個抵壓件222與環狀板224之間，以使 各個抵壓件222藉由彈簧226之彈力而均等地壓持於晶圓 W之周圍。在一實施例中，各個抵壓件222的第一固定部 P1或第一固定部P2例如以螺鎖方式固定於桿部222&上或 自桿部222a上拆除，以方便各個彈簣226套設在抵壓件 22=的柃部222a。另外，吸附頭216的吸附面S3與各個 抵壓件222的抵壓面S2係以共平面的方式配置。因此， M410333 各個抵壓件222以及吸附頭216以共平面的方式分別壓持 於晶圓W之周圍及中央區域，使晶圓W受力均等。也就是 說，晶圓W之周圍不會因翹曲或變形而無法緊密地貼合於 平台202上。 本創作上述二實施例所揭露之裝載裝置，係利用抵壓 單元抵壓於晶圓之周圍，以避免晶圓之周圍與其下方的平 • 台之間間隙太大（例如大於250微米）而發生故障警示， • 並減少因故障警示而中斷製程以進行修復的時間，以及減 • 少單站製程的報廢率、提高製程的良率等。 綜上所述，雖然本創作已以較佳實施例揭露如上，然 其並非用以限定本創作。本創作所屬技術領域中具有通常 知識者，在不脫離本創作之精神和範圍内，當可作各種之 更動與潤飾。因此，本創作之保護範圍當視後附之申請專 利範圍所界定者為準。 . 【圖式簡單說明】 φ 第1圖繪示依照一實施例之裝載裝置之側視示意圖。 第2圖繪示依照一實施例之裝載裝置之俯視示意圖。 第3A及3B圖分別繪示依照另一實施例之裝載裝置的 側面示意圖以及俯視示意圖。 【主要元件符號說明】 100、200 :裝載裝置 101 :承載平台 102、202 :製程平台 110、 210 :機械手臂 112 ： 轉軸 114、 214 :擷取臂 116、 216 :吸附頭 116a 、102a :通道 117 ： 固定桿 118 ： 管體 120、 220 :抵壓單元 122、 222 :抵壓件 124 ： 抵壓部 126 ： 活動臂 130 ： 驅動器 140 ： 吸真空裝置 222a :桿部 224 ： 環狀板 224a =子L 226 ： 彈簧 PI : 第一固定部 P2 : 第二固定部 El : 第一端 E2 : 第二端 M410333 SI、S2 :抵壓面 S3 :吸附面M410333 V. New description: [New technical field] The present invention relates to a loading device, and in particular to a loading device for loading a wafer onto a platform. [Prior Art] A conventional wafer polishing process employs a robotic arm to load a wafer to be polished onto a turntable, or to take out the wafer after grinding to perform a wafer cleaning step. The rotating platform holds the wafer and drives the wafer to rotate. When the wafer is rotated, a suitable chemical grinding agent can be added and the wafer can be mechanically ground with a grinding pad to smooth or flatten the dent or film on the surface of the wafer. Chemical. However, when the wafer is moved by the robot arm and positioned on the rotating platform, if the wafer warps or deforms too much, the wafer will not fit tightly on the rotating platform, so that the periphery of the wafer and the rotation below it. The gap between the platforms is too large to achieve the purpose of vacuum-adsorbing the wafer. [New Content] This creation is about a loading device that allows the wafer to be in close contact with the platform below it and adsorbed on the platform. According to one aspect of the present invention, a loading device is proposed for loading a wafer onto a platform. The loading device includes a robot arm and a pressing unit. The robot arm comprises a rotating shaft, a suction head and a picking arm, the rotating shaft is located at a first end of the capturing arm, and the adsorption head is located at a third end of the third M410333 of the capturing arm, wherein the adsorption head adsorbs the wafer, and the adsorption head The arm is rotated about the axis of rotation and the wafer is moved over the platform to position the wafer on the platform. The pressing unit is centered on the suction head and arranged in a ring shape on the picking arm. When the wafer is moved to the platform by the robot #, the pressing unit is evenly perpendicular to the periphery of the wafer so as to surround the wafer. Close contact with the platform and adsorption on the platform. In order to better understand the above and other aspects of the present invention, the following description of the preferred embodiments, together with the accompanying drawings, is described in detail below: [Embodiment] The loading device of the preferred embodiment of the present invention is used. In a polishing process or a planarization process of a semiconductor substrate, the semiconductor substrate is, for example, a stone wafer, which can be applied to various active 〇Γ passive elements, digital circuits or analog circuits (digital oj). ·Electronic components (electr〇nic components) such as analog circuits are, for example, related to photovoltaic devices, microelectromechanical systems (MEMS), microfluidics (micro fluidic systems), or a semiconductor substrate of a physical sensor (Physica 1 Sensor) measured by physical quantity changes such as heat, light, and pressure. In particular, a wafer scale package (WSP) process can be selected for image sensing components, light-emitting diodes (LEDs), solar cells, RF circuits, Semiconductors such as accelerators, gyroscopes, micro actuators, surface acoustic wave devices, process sensors, or ink jet heads (ink M41U333 printer* heads) The wafer is subjected to a semiconductor substrate of the county. The above wafer level packaging process mainly refers to cutting into a separate package after the packaging step is completed in the wafer stage. However, in a specific embodiment, for example, the separated semiconductor wafer is redistributed in a carrier B. On the round, the encapsulation process can also be called a wafer level packaging process. In addition, the above wafer level county process is also suitable for arranging a plurality of wafers having integrated circuits by means of stacked (4) sand to form a wafer package body of ti layer integrated circuit devices. Eyes refer to Figures 1 and 2, where the first! The figure shows a side view of the loading device according to the embodiment, and Fig. 2 shows a schematic view of the loading device according to the embodiment. The loading device 100 includes a robot arm 110 and a pressing unit 120. The robot arm 11 is used to take a wafer w and move the 曰: 曰 round to the processing platform 102 (as shown in FIG. 2, the dashed line W and the loading state of the loading device 100 are indicated by a broken line) Performing a Process Step The robot arm 110 includes a rotating shaft 112, an adsorption head 116, and a dip arm 114. The rotating shaft 112 is located at a first end E1 of the dip arm 114, and the adsorption head 116 is located at a second end E2 of the dip arm 114. When the process step is completed, the robotic arm 11 is automatically returned to the top of the process platform 1〇2, the wafer w is reloaded and moved to return to the original bearing platform μ (as shown in Fig. 1). In FIG. 1, the loading device 100 further includes a driver 130. The mechanical arm 110 is fixed to the driver 130. The driver 130 can transmit power to the robot arm 110 by a motor or a transmission gear to rotate the robot arm 11 within a predetermined range, move back and forth or move up and down, and the like. In a real 5 M410333 embodiment, one end of the couch arm is fixed to the driver 130 by the rotating shaft 112, so that the picking arm 114 can rotate around the rotating shaft 112, and can be operated by controlling the angle of rotation The other end of the arm 114 is located above the wafer w as shown in Fig. 1. Then, by controlling the distance of the downward movement, the adsorption head Mg on the extraction #114 is placed on the wafer evaluation, so that the adsorption head I" can adsorb the wafer W. In addition, the loading device 1 further includes a vacuum suction. The device 14 has at least one channel I 6a therein, one end of which can be connected to the vacuum suction device 140 via an outer tube 118 (or an inner tube located in the dip arm 114) to generate suction. When the vacuum suction device 14 is activated, a vacuum state is formed in the passage 116a of the adsorption head 116 to cause the wafer w to be adsorbed on the adsorption head 116. When the vacuum suction device 14 is closed by a pressure relief valve (not shown) In the vacuum state in 116a, the adsorption head 116 and the wafer w can be automatically knife-off. As shown in Fig. 2, when the adsorption head 116 adsorbs the wafer w, and the extraction arm 114 rotates around the rotation axis 112 and moves the crystal When the circle w is above the process platform 102, the wafer w is separated from the wafer w by the adsorption head 116 to place the wafer w on the process platform 102. In one embodiment, the process platform has a vacuum adsorption channel 102a, which can smooth the wafer w. The ground is adsorbed on the process platform 102. In addition, the process platform 1〇2 The rotating shaft (not shown) can synchronously drive the processing platform 1〇2 and the wafer w to perform steps such as a grinding process or a flattening process. In addition, the pressing unit 12 includes a plurality of pressing members. 22. Each of the pressing members 122 includes a pressing portion 124 and a movable arm 126. The pressing member 122 can be a separate component or a mutually interlocking component, and the number can be two, four or/or one. For example, when one pressing member 1 & pressure M410333 is held on one side of the wafer W, the other side of the wafer W is pressed against the other pressing member 122 to make the wafer W The force is equal to the opposite sides, as in the embodiment shown in Fig. 1. In addition, in the embodiment shown in Fig. 2, the plurality of pressing members 122 are arranged in an annular shape at equal intervals centering on the adsorption head 116. So that the periphery of the wafer W is pressed by the annularly arranged pressing member 122. Therefore, when the wafer W is adsorbed by the adsorption head 116 and moved by the extraction arm 114 to the process platform 102, the pressure is pressed. The unit 120 equally presses the circumference of the wafer W uniformly so that the periphery of the wafer W is in close contact with the process platform 102. And adsorbed on the process platform 102. That is to say, the periphery of the wafer W is not tightly attached to the process platform 102 due to warpage or deformation. In an embodiment, the pressing portion 124 is pressed. The surface S1 is in contact with the periphery of the wafer W, and has the characteristics of good wear resistance, corrosion resistance, and low friction coefficient, and the material thereof may be polytetrafluoroethylene (Polytetraf luoroethene, PTFE for short). Further, each of the pressing members 122 The pressing portion 124 can be fixed on the fixing rod 117 of the dip arm 114 by the respective movable arm 126, and • coplanarly presses the periphery of the wafer W so that the periphery of the wafer W and the manufacturing process are flat. 102 is in intimate contact and adsorbed on the process platform 102. In addition, the size of the bearing pad (not shown) on the bearing platform can be increased, so that when the adsorption head 116 adsorbs the wafer W, the bearing pad under the wafer W can provide a supporting force, which corresponds to the pressing member. 122 forces generated when pressed vertically, and deformation of the wafer W is prevented. Please refer to FIGS. 3A and 3B, which respectively show a side view and a top view of a loading device according to another embodiment. The loading device 200 includes a robot arm 210 and a pressing unit 220. The robot arm 210 is used to take a wafer W and move the wafer W onto a platform 202 for a 7 M410333 process step. The operation modes of the rotating shaft of the robot arm 210, the dip arm 214, and the suction head 216 are as shown in Figs. 1 and 2, and will not be described again. The present embodiment is different from the above embodiment in that the pressing unit 220 includes a plurality of pressing members 222, an annular plate 224, and a plurality of springs 226. Each of the pressing members 222 is supported by the annular plate 224 and vertically pressed against the wafer w. In one embodiment, the annular plate 224 is secured to the dip arm 214, which is parallel to the platform 202 and maintains a suitable spacing, and the annular plate 224 has a plurality of annularly aligned apertures. Further, each of the pressing members 222 has a first fixing portion pi and a second fixing portion P2 having a size larger than the diameter of the annular plate 224. The rod portion 222a of each of the pressing members 122 is connected between the first fixing portion P1 and the second fixing portion P2 and passes through the hole 224a of the annular plate 224 so that the respective pressing members 222 are supported by the annular plate 224 and It is perpendicular to the periphery of the wafer w. In one embodiment, the pressing member 222 is pressed around the wafer W by the second fixing portion P2, and the pressing surface S2 of the second fixing portion p2 has good wear resistance, corrosion resistance, and low friction coefficient. The material can be polytetrafluoroethylene (PTFE). In addition, each spring 226 is sleeved on the rod portion 222a of the pressing member 222, and is elastically supported between the respective pressing members 222 and the annular plate 224, so that the respective pressing members 222 are equalized by the elastic force of the spring 226. The ground pressure is held around the wafer W. In an embodiment, the first fixing portion P1 or the first fixing portion P2 of each pressing member 222 is fixed on the rod portion 222 & or is detached from the rod portion 222a, for example, to facilitate the 226 sets of each magazine. It is provided at the crotch portion 222a of the pressing member 22=. Further, the adsorption surface S3 of the adsorption head 216 and the pressure-receiving surface S2 of each of the pressing members 222 are arranged in a coplanar manner. Therefore, each of the pressing members 222 and the adsorption heads 216 of the M410333 are respectively held in a coplanar manner around the central portion and the central region of the wafer W, so that the wafer W is equally stressed. That is, the periphery of the wafer W is not tightly attached to the stage 202 due to warpage or deformation. The loading device disclosed in the above two embodiments is pressed against the periphery of the wafer by the pressing unit to prevent the gap between the periphery of the wafer and the platform below it from being too large (for example, greater than 250 μm). Fault warnings, • Reduce the time to interrupt the process for repairs due to fault warnings, reduce the scrap rate of single-station processes, and increase the yield of the process. In summary, although the present invention has been disclosed above in the preferred embodiment, it is not intended to limit the present invention. Those who have ordinary knowledge in the technical field of the present invention can make various changes and refinements without departing from the spirit and scope of the present creation. Therefore, the scope of protection of this creation is subject to the definition of the scope of the application patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side elevational view of a loading device in accordance with an embodiment. 2 is a top plan view of a loading device in accordance with an embodiment. 3A and 3B are respectively a side view and a top plan view of a loading device according to another embodiment. [Main component symbol description] 100, 200: loading device 101: carrying platform 102, 202: processing platform 110, 210: robot arm 112: rotating shaft 114, 214: pumping arm 116, 216: adsorption head 116a, 102a: channel 117 : Fixing rod 118 : Pipe body 120 , 220 : Pressing unit 122 , 222 : Pressing member 124 : Pressing portion 126 : Moving arm 130 : Actuator 140 : Vacuum suction device 222a : Rod portion 224 : Annular plate 224a = Child L 226 : Spring PI : First fixing portion P2 : Second fixing portion El : First end E2 : Second end M410333 SI, S2 : Abutting surface S3 : Adsorption surface