TWI564937B - A crystalline laminated structure, and a semiconductor device - Google Patents

A crystalline laminated structure, and a semiconductor device Download PDF

Info

Publication number
TWI564937B
TWI564937B TW104114711A TW104114711A TWI564937B TW I564937 B TWI564937 B TW I564937B TW 104114711 A TW104114711 A TW 104114711A TW 104114711 A TW104114711 A TW 104114711A TW I564937 B TWI564937 B TW I564937B
Authority
TW
Taiwan
Prior art keywords
layer
film
metal
substrate
crystalline
Prior art date
Application number
TW104114711A
Other languages
English (en)
Chinese (zh)
Other versions
TW201543547A (zh
Inventor
Toshimi Hitora
Masaya Oda
Akio Takatsuka
Original Assignee
Flosfia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Flosfia Inc filed Critical Flosfia Inc
Publication of TW201543547A publication Critical patent/TW201543547A/zh
Application granted granted Critical
Publication of TWI564937B publication Critical patent/TWI564937B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Led Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
TW104114711A 2014-05-08 2015-05-08 A crystalline laminated structure, and a semiconductor device TWI564937B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014097241 2014-05-08

Publications (2)

Publication Number Publication Date
TW201543547A TW201543547A (zh) 2015-11-16
TWI564937B true TWI564937B (zh) 2017-01-01

Family

ID=52146232

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104114711A TWI564937B (zh) 2014-05-08 2015-05-08 A crystalline laminated structure, and a semiconductor device

Country Status (5)

Country Link
US (1) US9590050B2 (enExample)
EP (1) EP2942804B1 (enExample)
JP (2) JP6627131B2 (enExample)
CN (1) CN105097896B (enExample)
TW (1) TWI564937B (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6135487B2 (ja) 2013-12-09 2017-05-31 富士通株式会社 半導体装置及び半導体装置の製造方法
CN110828551A (zh) 2014-07-22 2020-02-21 株式会社Flosfia 结晶性半导体膜和板状体以及半导体装置
TW201638363A (zh) * 2015-02-18 2016-11-01 Idemitsu Kosan Co 積層體及積層體之製造方法
US11728356B2 (en) * 2015-05-14 2023-08-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion element and imaging device
JP6906217B2 (ja) * 2015-12-18 2021-07-21 株式会社Flosfia 半導体装置
JP2017118090A (ja) * 2015-12-21 2017-06-29 株式会社Flosfia 積層構造体および半導体装置
JP6976858B2 (ja) * 2015-12-25 2021-12-08 出光興産株式会社 積層体
US10340356B2 (en) 2015-12-25 2019-07-02 Idemitsu Kosan Co., Ltd. Laminated article
US10546960B2 (en) 2016-02-05 2020-01-28 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film, semiconductor device, and manufacturing method of semiconductor device
KR102296809B1 (ko) 2016-06-03 2021-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물 및 전계 효과 트랜지스터
JP7065443B2 (ja) * 2016-06-30 2022-05-12 株式会社Flosfia ｐ型酸化物半導体及びその製造方法
US10804362B2 (en) * 2016-08-31 2020-10-13 Flosfia Inc. Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system
JP6951715B2 (ja) 2016-09-15 2021-10-20 株式会社Flosfia 半導体膜の製造方法及び半導体膜並びにドーピング用錯化合物及びドーピング方法
US20180097073A1 (en) * 2016-10-03 2018-04-05 Flosfia Inc. Semiconductor device and semiconductor system including semiconductor device
WO2018128103A1 (ja) * 2017-01-05 2018-07-12 パナソニック株式会社 半導体リレー
JP2018137394A (ja) * 2017-02-23 2018-08-30 トヨタ自動車株式会社 半導体装置の製造方法
JP7291331B2 (ja) * 2017-02-27 2023-06-15 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
JP7116409B2 (ja) 2017-02-27 2022-08-10 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
JP6967238B2 (ja) * 2017-02-28 2021-11-17 株式会社タムラ製作所 ショットキーバリアダイオード
JP7008293B2 (ja) * 2017-04-27 2022-01-25 国立研究開発法人情報通信研究機構 Ｇａ２Ｏ３系半導体素子
US10777644B2 (en) * 2017-04-27 2020-09-15 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Heterojunction devices and methods for fabricating the same
JP6991503B2 (ja) 2017-07-06 2022-01-12 株式会社タムラ製作所 ショットキーバリアダイオード
JP7082390B2 (ja) * 2017-08-04 2022-06-08 高知県公立大学法人 深紫外発光素子およびその製造方法
JP7037142B2 (ja) 2017-08-10 2022-03-16 株式会社タムラ製作所 ダイオード
US10943981B2 (en) * 2017-08-24 2021-03-09 Flosfia Inc. Semiconductor device
JP7179276B2 (ja) * 2017-09-29 2022-11-29 株式会社タムラ製作所 電界効果トランジスタ
JP6933339B2 (ja) * 2017-10-18 2021-09-08 矢崎総業株式会社 半導体装置および半導体ウェーハ
US11670688B2 (en) * 2017-11-15 2023-06-06 Flosfia Inc. Semiconductor apparatus
WO2019098298A1 (ja) * 2017-11-15 2019-05-23 株式会社Flosfia 半導体装置
WO2020004250A1 (ja) * 2018-06-26 2020-01-02 株式会社Flosfia 結晶性酸化物膜
EP3823043A4 (en) * 2018-07-12 2022-04-13 Flosfia Inc. SEMICONDUCTOR DEVICE
US12148804B2 (en) * 2018-07-12 2024-11-19 Flosfia Inc. Semiconductor device including one or more p-type semiconductors provided between an n-type semiconductor layer and an electrode
TWI897850B (zh) * 2018-07-12 2025-09-21 日商Ｆｌｏｓｆｉａ股份有限公司 半導體裝置和半導體系統
KR102598375B1 (ko) * 2018-08-01 2023-11-06 이데미쓰 고산 가부시키가이샤 결정 구조 화합물, 산화물 소결체, 스퍼터링 타깃, 결정질 산화물 박막, 아모르퍼스 산화물 박막, 박막 트랜지스터, 및 전자 기기
JP7315136B2 (ja) * 2018-12-26 2023-07-26 株式会社Flosfia 結晶性酸化物半導体
TWI706452B (zh) * 2019-04-11 2020-10-01 台灣茂矽電子股份有限公司 閘結構之製造方法及閘結構
WO2020235691A1 (ja) * 2019-05-23 2020-11-26 株式会社Flosfia 半導体装置
CN114144889A (zh) * 2019-05-23 2022-03-04 株式会社Flosfia 半导体装置
CN110571152A (zh) * 2019-08-14 2019-12-13 青岛佳恩半导体有限公司 一种igbt背面电极缓冲层的制备方法
CN114302982B (zh) * 2019-08-27 2024-10-29 信越化学工业株式会社 层叠结构体及层叠结构体的制造方法
CN114556585A (zh) * 2019-09-30 2022-05-27 株式会社Flosfia 层叠结构体和半导体装置
JPWO2021095474A1 (enExample) * 2019-11-14 2021-05-20
CN111106167A (zh) * 2019-11-27 2020-05-05 太原理工大学 一种择优取向的Ga2O3和SnO2混相膜基传感器的制备方法
CN114747021A (zh) * 2019-11-29 2022-07-12 株式会社Flosfia 半导体装置及具有半导体装置的半导体系统
JP7382559B2 (ja) * 2019-12-25 2023-11-17 株式会社ノベルクリスタルテクノロジー トレンチ型ｍｅｓｆｅｔ
CN111180557A (zh) * 2019-12-25 2020-05-19 中南大学 一种新型紫外发光二极管及其制备方法
JPWO2021157719A1 (enExample) * 2020-02-07 2021-08-12
JP6873516B1 (ja) * 2020-06-05 2021-05-19 Ｅａｓｔｗｉｎｄ合同会社 パワー半導体素子及びその製造方法
JPWO2022030651A1 (enExample) * 2020-08-07 2022-02-10
CN111933711B (zh) * 2020-08-18 2022-08-23 电子科技大学 一种集成sbd的超结mosfet
CN112713183B (zh) * 2020-12-28 2022-06-10 光华临港工程应用技术研发(上海)有限公司 气体传感器的制备方法及气体传感器
JP7598268B2 (ja) 2021-03-15 2024-12-11 株式会社東芝 半導体装置
CN113629148A (zh) * 2021-06-24 2021-11-09 湖南大学 一种双栅极增强型氧化镓mesfet器件及其制作方法
EP4285415A1 (en) * 2021-07-22 2023-12-06 Huawei Technologies Co., Ltd. Member, transistor devices, power devices, and method for manufacturing member
CN113794460B (zh) * 2021-09-17 2024-02-23 中国科学技术大学 纳米声子晶体及其制备方法
CN118541811A (zh) * 2022-01-14 2024-08-23 株式会社Flosfia 半导体装置
JPWO2023182312A1 (enExample) * 2022-03-25 2023-09-28
US20250376773A1 (en) * 2022-06-21 2025-12-11 Northwestern University Methods of forming stable conductive surfaces
JP2024016694A (ja) * 2022-07-26 2024-02-07 株式会社ノベルクリスタルテクノロジー フィン型電界効果トランジスタ
WO2025063023A1 (ja) * 2023-09-18 2025-03-27 Ａｇｃ株式会社 電子デバイス
WO2025063022A1 (ja) * 2023-09-18 2025-03-27 Ａｇｃ株式会社 電子デバイス
JP2025087001A (ja) * 2023-11-29 2025-06-10 株式会社ノベルクリスタルテクノロジー 半導体装置の製造方法及び半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101931009A (zh) * 2009-06-22 2010-12-29 富士胶片株式会社 薄膜晶体管和制备薄膜晶体管的方法
TW201249752A (en) * 2011-04-13 2012-12-16 Semiconductor Energy Lab Oxide semiconductor film and semiconductor device
JP2012256850A (ja) * 2011-05-17 2012-12-27 Mitsubishi Materials Corp 強誘電体薄膜の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07262829A (ja) * 1994-03-25 1995-10-13 Hitachi Ltd 透明導電膜及びその形成方法
JP3881407B2 (ja) * 1996-07-31 2007-02-14 Ｈｏｙａ株式会社 導電性酸化物薄膜、この薄膜を有する物品及びその製造方法
US6863943B2 (en) * 2001-01-12 2005-03-08 Georgia Tech Research Corporation Semiconducting oxide nanostructures
TW515116B (en) * 2001-12-27 2002-12-21 South Epitaxy Corp Light emitting diode structure
US7250627B2 (en) * 2004-03-12 2007-07-31 Hewlett-Packard Development Company, L.P. Semiconductor device
US7265483B2 (en) 2004-03-29 2007-09-04 Canon Kabushiki Kaisha Dielectric member, piezoelectric member, ink jet head, ink jet recording apparatus and producing method for ink jet recording apparatus
CN100388519C (zh) 2005-11-17 2008-05-14 晶能光电（江西）有限公司 在硅衬底上制备高质量发光半导体薄膜的方法
JP2007305975A (ja) * 2006-04-13 2007-11-22 National Institute Of Advanced Industrial & Technology Ｉｉｉ族酸化物半導体を含む半導体素子
JP5509419B2 (ja) 2009-07-24 2014-06-04 株式会社ユーテック 強誘電体膜、電子部品及び強誘電体膜の製造方法
KR101932576B1 (ko) * 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5828293B2 (ja) 2011-05-17 2015-12-02 三菱マテリアル株式会社 Ｐｚｔ強誘電体薄膜の製造方法
US9299852B2 (en) * 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20140217471A1 (en) 2011-09-08 2014-08-07 National Institute of Information and Communicatio ns Technology Ga2O3 SEMICONDUCTOR ELEMENT
JP2013058636A (ja) 2011-09-08 2013-03-28 Tamura Seisakusho Co Ltd β−Ｇａ２Ｏ３系基板、ＬＥＤ素子、及びＬＥＤ素子の製造方法
US9437689B2 (en) 2011-09-08 2016-09-06 Tamura Corporation Ga2O3 semiconductor element
EP2765610B1 (en) * 2011-09-08 2018-12-26 Tamura Corporation Ga2o3 semiconductor element
JP6083262B2 (ja) * 2012-03-14 2017-02-22 Tdk株式会社 ヘテロエピタキシャルｐｎ接合酸化物薄膜を有する積層薄膜
JP5528612B1 (ja) * 2013-07-09 2014-06-25 Ｒｏｃａ株式会社 半導体装置
JP6067532B2 (ja) * 2013-10-10 2017-01-25 株式会社Flosfia 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101931009A (zh) * 2009-06-22 2010-12-29 富士胶片株式会社 薄膜晶体管和制备薄膜晶体管的方法
TW201249752A (en) * 2011-04-13 2012-12-16 Semiconductor Energy Lab Oxide semiconductor film and semiconductor device
JP2012256850A (ja) * 2011-05-17 2012-12-27 Mitsubishi Materials Corp 強誘電体薄膜の製造方法

Also Published As

Publication number Publication date
JP2020036041A (ja) 2020-03-05
US20150325660A1 (en) 2015-11-12
CN105097896A (zh) 2015-11-25
CN105097896B (zh) 2019-05-14
TW201543547A (zh) 2015-11-16
EP2942804A1 (en) 2015-11-11
JP2015227279A (ja) 2015-12-17
EP2942804B1 (en) 2017-07-12
JP6875627B2 (ja) 2021-05-26
US9590050B2 (en) 2017-03-07
JP6627131B2 (ja) 2020-01-08

Similar Documents

Publication Publication Date Title
TWI564937B (zh) A crystalline laminated structure, and a semiconductor device
JP7126085B2 (ja) 半導体装置
JP2016025256A (ja) 半導体装置
JP6230196B2 (ja) 結晶性半導体膜および半導体装置
JP6478425B2 (ja) 結晶性半導体膜および半導体装置