TWI564937B - A crystalline laminated structure, and a semiconductor device - Google Patents

A crystalline laminated structure, and a semiconductor device Download PDF

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Publication number
TWI564937B
TWI564937B TW104114711A TW104114711A TWI564937B TW I564937 B TWI564937 B TW I564937B TW 104114711 A TW104114711 A TW 104114711A TW 104114711 A TW104114711 A TW 104114711A TW I564937 B TWI564937 B TW I564937B
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Taiwan
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layer
film
metal
substrate
crystalline
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TW104114711A
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Chinese (zh)
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TW201543547A (zh
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人羅俊實
織田真也
高塚章夫
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Ｆｌｏｓｆｉａ股份有限公司
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    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
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    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
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    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
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    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
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    • H10P14/3451—Structure
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    • H10H20/832—Electrodes characterised by their material
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  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW104114711A 2014-05-08 2015-05-08 A crystalline laminated structure, and a semiconductor device TWI564937B (zh)

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JP2014097241 2014-05-08

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TW201543547A TW201543547A (zh) 2015-11-16
TWI564937B true TWI564937B (zh) 2017-01-01

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US (1) US9590050B2 (enExample)
EP (1) EP2942804B1 (enExample)
JP (2) JP6627131B2 (enExample)
CN (1) CN105097896B (enExample)
TW (1) TWI564937B (enExample)

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