TWI554644B - 用於金屬化之方法、裝置及材料 - Google Patents

用於金屬化之方法、裝置及材料 Download PDF

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Publication number
TWI554644B
TWI554644B TW100124041A TW100124041A TWI554644B TW I554644 B TWI554644 B TW I554644B TW 100124041 A TW100124041 A TW 100124041A TW 100124041 A TW100124041 A TW 100124041A TW I554644 B TWI554644 B TW I554644B
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Taiwan
Prior art keywords
alloy
silver
copper
cobalt
nickel
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TW100124041A
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English (en)
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TW201213609A (en
Inventor
亞圖 寇力克斯
威廉Ｔ 李
佛禮茲 瑞德克
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蘭姆研究公司
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Publication of TW201213609A publication Critical patent/TW201213609A/zh
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Description

用於金屬化之方法、裝置及材料
本發明之一或多個實施例係關於例如積體電路之電子裝置的製造；更具體而言，本發明之一或多個實施例係關於用在包含焊料接點之結構的材料與金屬化層。
電連接用的焊料接點已長期被使用在電子裝置上。存在有許多已建立的製程，並且將這些製程用於製造此種裝置。許多這些製程已可提供令人滿意的結果，但幾乎沒有對許多這些已建立的製程做出重要的改良，即使有也是極少數。
本案發明人有一或多種可能關於(例如用於電子裝置之)焊料接點技術的發現。此一或多種發現可能具有用以提供一或多種包含或使用焊料接點技術之方法、材料、及/或電子裝置的可能性。
本發明之一或多個實施樣態係關於電子裝置的製造。本發明之一實施樣態為一種電子裝置的製造方法。依照一實施例，此方法包含下列步驟：提供一基板；至少在此基板部分上無電沉積一阻障金屬；以及使用例如無電沉積的溼式化學，將具有焊料潤溼性的一實質上無金潤溼層沉積到此阻障金屬上。
本發明之另一實施樣態為一種電子裝置。依照一實施例，此電子裝置包含一金屬化堆疊。此金屬化堆疊包含無電沉積的一阻障金屬以及沉積在此阻障金屬上的一實質上無金潤溼層，而此潤溼層可被焊料潤溼。
吾人應瞭解本發明並不將其應用限制於構造詳圖以及限制於下列說明中所提及的構件排列。本發明可具有其他實施例並且可以各種方式加以實施與實現。此外，吾人應瞭解在此所使用的措詞與專門用語係為了說明之目的並且不應被視為限制。
對於以下所定義之詞語，除非在請求項或本說明書別處給予不同的定義，否則應當使用這些定義。不論是否有明確表示，全部數值在此皆定義為藉由「約」一詞所修飾。「約」一詞通常係指本技術領域中具有通常知識者會認為係與所陳述之值相等而產生實質上相同特性、功能、結果等等的數字範圍。將由低值與高值所表示的數值範圍定義成包含此數值範圍內所包括的全部數字以及此數值範圍內所包括的全部子範圍。作為一範圍，10到15的範圍包含但不限於10、10.1、10.47、11、11.75到12.2、12.5、13到13.8、14、14.025、以及15。
本發明之一或多個實施例係關於包含焊料之結構用的方法、裝置、材料、及/或金屬化層。更具體而言，本發明係針對包含焊料之電子裝置用的材料以及金屬化層。
以下主要就處理用於製造電子裝置之半導體晶圓(例如矽晶圓)的背景來討論本發明之實施例。這些電子裝置包含銅及/或另一導電體。這些電子裝置具有包含焊料的一或多個電連接部。然而，吾人應瞭解依照本發明的實施例可用於其他類型的半導體裝置以及半導體晶圓以外的晶圓。
現在參考圖1，其顯示依照本發明之一實施例的流程圖40。流程圖40包含設置基板的步驟50。非必要地，此基板可為例如半導體晶圓(如矽晶圓)的基板或者為適合製造電子裝置之另一材料的基板。流程圖40包含至少在基板部分上無電沉積(ELD，electrolessly depositing)阻障金屬的步驟60。流程圖40亦包含溼式化學沉積，例如無電沉積潤溼層的步驟70。此潤溼層為具有焊料潤溼性之實質上無金潤溼層。將此潤溼層沉積在此阻障金屬上。非必要地，本發明之一實施例的流程圖可包括進一步包含形成與潤溼層接觸之焊料的流程圖40。
在流程圖40中，設置基板的步驟50可使用種種基板加以實現。換言之，可將種種基板用於本發明之附加實施例的流程圖40中。作為流程圖40的一種選擇，設置基板的步驟50包含設置包含一或多個電接點焊墊的基板，而無電沉積阻障金屬的步驟60包含將阻障金屬無電沉積到該一或多個電接點焊墊上。
作為流程圖40的另一種選擇，設置基板的步驟50包含設置包含一或多個貫通基板穿孔導體的基板，而無電沉積阻障金屬的步驟60包含將阻障金屬無電沉積到該一或多個貫通基板穿孔導體上。
作為流程圖40的又另一種選擇，設置基板的步驟50包含設置包含一或多個穿孔的基板，而無電沉積阻障金屬的步驟60包含將阻障金屬無電沉積到該一或多個穿孔的壁上。
適合用在流程圖40中之阻障金屬的範例包含但不限於無電沉積之鎳、無電沉積之鎳合金、無電沉積之鈷、以及無電沉積之鈷合金。依照本發明之一或多個實施例，流程圖40包含將阻障金屬沉積達到0.2微米至1微米以及其內所包括之全部數值的厚度。
對於本發明之某些實施例，在不使用鈀或其他貴金屬來作為活化金屬以啟動沉積製程的情況下，無電沉積阻障金屬。不使用用於表面活化的鈀或其他貴金屬，對於無電沉積製程，本發明之一或多個實施例係使用包含例如硼烷之還原劑的無電沉積浴。依照本發明之一或多個實施例，將硼烷使用作為無電沉積浴中的至少其中一種還原劑，可避免形成與具有金潤溼層之鎳磷阻障層相關的黑焊墊。
吾人可針對包含使用無電沉積潤溼層之步驟70之一或多種選擇的種種本發明實施例而修改流程圖40。關於無電沉積潤溼層之步驟70之流程圖40的選擇包含但不限於：包含無電沉積錫或錫合金之無電沉積實質上無金潤溼層的步驟；包含無電沉積銀或銀合金之無電沉積實質上無金潤溼層的步驟；包含無電沉積具有3-4原子百分比鎢之銀鎢合金的無電沉積實質上無金潤溼層的步驟；包含無電沉積鈷錫合金、鈷銅合金、鈷銀合金、鈷銅錫合金、鈷銅銀合金、鈷銀錫合金、或鈷銅銀錫合金之無電沉積實質上無金潤溼層的步驟；包含無電沉積鎳銅合金、鎳銀合金、鎳銅銀合金、鎳銅錫合金、鎳銀錫合金、或鎳銅銀錫合金之無電沉積實質上無金潤溼層的步驟；包含無電沉積鐵錫合金、鐵銅合金、鐵銀合金、鐵銅錫合金、鐵銅銀合金、鐵銀錫合金、或鐵銅銀錫合金之無電沉積實質上無金潤溼層的步驟；包含無電沉積一層具有第一成分之鎳合金與一層具有第二成分之鎳合金之無電沉積實質上無金潤溼層的步驟；包含無電沉積一層具有第一成分之鈷合金與一層具有第二成分之鈷合金之無電沉積實質上無金潤溼層的步驟；包含無電沉積一層具有第一成分之鐵合金與一層具有第二成分之鐵合金之無電沉積實質上無金潤溼層的步驟。非必要地，本發明之一或多個實施例可更包含將硼及/或磷併入實質上無金潤溼層。對於本發明之某些實施例，可結合無電沉積潤溼層之步驟70的其中一或多種選擇。
對於本發明之某些實施例，流程圖40可更包含在潤溼層的表面上使用一或多個防蝕程序以保有適合與焊料接觸的表面。適合本發明實施例之防蝕程序的範例包含但不限於：在潤溼層上沉積腐蝕保護膜；形成有機可焊防護層；以含有腐蝕抑制劑的溶液沖洗潤溼層；以及調整潤溼層之表面的成分，俾使其較不易受到腐蝕影響。
如上所述，本發明之一或多個實施例包含使用潤溼層，其整個潤溼層厚度的組成成分並非固定不變。對於包含無電沉積一層具有第一成分之鎳合金與一層具有第二成分之鎳合金的本發明實施例，成分變化可藉由改變例如沉積製程之溫度、以及電鍍配方之成分的一或多個沉積條件而實現。包含無電沉積一層具有第一成分之鈷合金與一層具有第二成分之鈷合金的本發明實施例，亦可使用一或多個沉積條件的變化來實現潤溼層成分的變化。包含無電沉積一層具有第一成分之鐵合金與一層具有第二成分之鐵合金的本發明實施例，亦可使用一或多個沉積條件的變化來實現潤溼層成分的變化。
本發明之一或多個實施例包含依照流程圖40的方法，其中在溫度T1下使用無電沉積浴成分來沉積阻障金屬、並且在另一溫度T2(其中T1不等於T2)下使用無電沉積浴成分來沉積潤溼層，以實現至少在基板部分上無電沉積阻障金屬的步驟60以及無電沉積具有焊料潤溼性之實質上無金潤溼層的步驟70。換言之，T1與T2為相異而足以自同一無電沉積浴成分引起具有不同成分之材料的無電沉積。或者，在溫度範圍TR1使用無電沉積浴成分來沉積阻障金屬並且在另一溫度範圍TR2(其中TR1與TR2為相異)使用無電沉積浴成分來沉積潤溼層，以實現至少在基板部分上無電沉積阻障金屬的步驟60以及無電沉積具有焊料潤溼性之實質上無金潤溼層的步驟70。換言之，TR1與TR2為相異而足以自同一無電沉積浴成分引起具有不同成分之材料的無電沉積。，對於一或多個實施例，阻障金屬的厚度成分分佈(thickness composition profile)可隨著TR1的溫度變化結果而變化及/或潤溼層的厚度成分分佈可隨著TR2的溫度變化結果而變化。
本發明之另一實施例包含電子裝置的製造方法。此方法包含設置基板的步驟50，此步驟包含設置包含一或多個電接點焊墊及/或一或多個貫通基板穿孔導體的基板。此方法亦包含無電沉積阻障金屬的步驟60，此步驟包含無電沉積含有鎳與鈷元素至少其中一者的阻障金屬。此阻障金屬係至少在部分之一或多個電接點焊墊及/或一或多個貫通基板穿孔導體上具有0.2微米至1微米以及其內所包括之全部數值與範圍的厚度。對於無電沉積潤溼層的步驟70，此方法包含無電沉積下列至少其中一者：錫或錫合金；具有3-4原子百分比鎢的銀鎢合金；銅或銅合金；鈷錫合金；鈷銅合金；鈷銀合金；鈷銅錫合金；鈷銅銀合金；鈷銀錫合金；鈷銅銀錫合金；鎳銅合金；鎳銀合金；鎳銅銀合金；鎳銅錫合金；鎳銀錫合金；鎳銅銀錫合金；鐵錫合金；鐵銅合金；鐵銀合金；鐵銅錫合金；鐵銅銀合金；鐵銀錫合金；鐵銅銀錫合金；一層具有第一成分的鎳合金與一層具有第二成分的鎳合金；一層具有第一成分的鈷合金與一層具有第二成分的鈷合金；以及一層具有第一成分的鐵合金與一層具有第二成分的鐵合金，以接觸阻障金屬而形成具有焊料潤溼性的實質上無金潤溼層。非必要地，此方法可更包含將硼及/或磷併入實質上無金潤溼層。此方法亦包含將一焊料接點形成於實質上無金潤溼層。
現在參考圖2，其顯示依照本發明之一實施例之電子裝置100的一部分的橫剖面側視圖。電子裝置100包含具有基座106的基板102、支撐在基座106上的接點焊墊110、以及位於基座106上的鈍化層112。電子裝置100更包含金屬化堆疊，其包含位於電接點焊墊110上的無電沉積阻障金屬114以及位於阻障金屬114上的無電沉積實質上無金潤溼層118。潤溼層118可被焊料潤溼。電子裝置100更包含與潤溼層118接觸的焊料122。圖2顯示如焊料球的焊料122，其可用於製造另一電接點。圖2亦顯示具有非必要鈍化層124的電子裝置100。
對於電子裝置100的某些實施例，基板102可包含已完成或部分完成之積體電路裝置。非必要地，基座106可為例如矽的半導體，或者其可為適合製造電子裝置的另一材料。非必要地，接點焊墊110可包含例如電子裝置用之最終金屬接點焊墊的接點焊墊，如鋁接點焊墊以及銅接點焊墊。本發明之一或多個實施例包含具有至少部分被阻障金屬114所覆蓋的電接點焊墊110。
本發明之一或多個實施例包含含有鎳與鈷元素至少其中一者的阻障金屬114。依照本發明之一實施例，電子裝置100具有一層約0.2微米至1微米以及其內所包括之全部數值與範圍的阻障金屬114。對於本發明之一或多個實施例，阻障金屬114包含鎳與鈷元素至少其中一者，而阻障金屬114的厚度為約0.2微米至1微米以及其內所包括之全部數值與範圍。
本發明之附加實施例可具有包含種種材料系統之其中一或多者的潤溼層118。適合使用作為潤溼層118之材料系統的範例包含但不限於：包含錫或錫合金的潤溼層118；包含銀或銀合金的潤溼層118；包含具有3-4原子百分比鎢之銀鎢合金的潤溼層118；包含銅或銅合金的潤溼層118；包含鈷錫合金、鈷銅合金、鈷銀合金、鈷銅錫合金、鈷銅銀合金、鈷銀錫合金、或鈷銅銀錫合金的潤溼層118；包含鎳銅合金、鎳銀合金、鎳銅銀合金、鎳銅錫合金、鎳銀錫合金、或鎳銅銀錫合金的潤溼層118；包含鐵錫合金、鐵銅合金、鐵銀合金、鐵銅錫合金、鐵銅銀合金、鐵銀錫合金、或鐵銅銀錫合金的潤溼層118；包含一層具有第一成分之鎳合金與一層具有第二成分之鎳合金的潤溼層118；包含一層具有第一成分之鈷合金與一層具有第二成分之鈷合金的潤溼層118；包含一層具有第一成分之鐵合金與一層具有第二成分之鐵合金的潤溼層118；更包含硼及/或磷的潤溼層118。
現在參考圖3，其顯示依照本發明之一實施例之電子裝置200的一部分的橫剖面側視圖。電子裝置200包含基板202，其具有貫通基板穿孔210、以及貫通基板穿孔導電體212。電子裝置200包含位於基板202上的鈍化層224。電子裝置200更包含金屬化堆疊，其包含位於導電體212上的無電沉積阻障金屬214以及位於阻障金屬214上的實質上無金潤溼層218。作為一種選擇，將實質上無金潤溼層218無電沉積在阻障金屬214上。潤溼層218可被焊料潤溼。電子裝置200更包含與潤溼層218接觸的焊料222。
對於電子裝置200的某些實施例，基板202可包含已完成或部分完成的積體電路裝置。非必要地，基板202可為例如矽的半導體，或者其可為適合製造電子裝置的另一材料。非必要地，貫通基板穿孔導電體212可包含例如但不限於鋁、銅、多晶矽、焊料、以及鎢的導電體。本發明之一或多個實施例包含具有至少部分被阻障金屬214所覆蓋的貫通基板穿孔導電體212。
本發明之一或多個實施例包含含有鎳與鈷元素至少其中一者的阻障金屬214。依照本發明之一實施例，電子裝置200具有一層約0.2微米至1微米以及其內所包括之全部數值與範圍的阻障金屬214。對於本發明之一或多個實施例，阻障金屬214包含鎳與鈷元素至少其中一者，而阻障金屬214的厚度為約0.2微米至1微米以及其內所包括之全部數值與範圍。
本發明之附加實施例可具有包含種種材料系統之其中一或多者的潤溼層218。適合使用作為潤溼層218之材料系統的範例包含但不限於：包含錫或錫合金的潤溼層218；包含銀或銀合金的潤溼層218；包含具有3-4原子百分比鎢之銀鎢合金的潤溼層218；包含銅或銅合金的潤溼層218；包含鈷錫合金、鈷銅合金、鈷銀合金、鈷銅錫合金、鈷銅銀合金、鈷銀錫合金、或鈷銅銀錫合金的潤溼層218；包含鎳銅合金、鎳銀合金、鎳銅銀合金、鎳銅錫合金、鎳銀錫合金、或鎳銅銀錫合金的潤溼層218；包含鐵錫合金、鐵銅合金、鐵銀合金、鐵銅錫合金、鐵銅銀合金、鐵銀錫合金、或鐵銅銀錫合金的潤溼層218；包含一層具有第一成分之鎳合金與一層具有第二成分之鎳合金的潤溼層218；包含一層具有第一成分之鈷合金與一層具有第二成分之鈷合金的潤溼層218；包含一層具有第一成分之鐵合金與一層具有第二成分之鐵合金的潤溼層218；更包含硼及/或磷的潤溼層218。
本發明之另一實施例包含含有金屬化堆疊的電子裝置。此金屬化堆疊包含無電沉積阻障金屬以及無電沉積在此阻障金屬上的實質上無金潤溼層。此阻障金屬與此潤溼層電接觸，而此潤溼層可被焊料潤溼。此阻障金屬具有0.2微米至1微米以及其內所包括之全部數值與範圍的厚度。此阻障金屬包含鎳與鈷元素至少其中一者。此潤溼層包含：錫或錫合金；銀或銀合金；具有3-4原子百分比鎢的銀鎢合金；銅或銅合金；鈷錫合金；包含硼及/或磷的鈷錫合金；鎳錫合金；包含硼及/或磷的鎳錫合金；一層具有第一成分的鎳錫合金與一層具有第二成分的鎳錫合金；或一層具有第一成分的鈷錫合金與一層具有第二成分的鈷錫合金。此電子裝置更包含至少部分被阻障金屬所覆蓋的一或多個電接點焊墊及/或至少部分被阻障金屬所覆蓋的一或多個貫通基板穿孔導體。此實施例亦包含與潤溼層接觸的焊料。
現在參考圖4，其顯示依照本發明之一實施例之電子裝置300的一部分的橫剖面側視圖。電子裝置300包含具有貫通基板穿孔310的基板302。電子裝置300更包含貫通基板導電體，其包含實質上覆蓋貫通基板穿孔310之壁的無電沉積阻障金屬314以及位於阻障金屬314上的實質上無金潤溼層318。另一種選擇是將實質上無金潤溼層318無電沉積在阻障金屬314上。潤溼層318可被焊料潤溼。電子裝置300更包含與潤溼層318接觸的焊料322，以實質上填滿被潤溼層318所圍住的中心。圖4顯示包含阻障金屬326的電子裝置300，此阻障金屬可非必要地具有類似於阻障金屬314的特性或者可為不同的材料。又，圖4顯示包含潤溼層330的電子裝置300，此潤溼層可非必要地具有類似於潤溼層318的特性或者可為不同的材料。
對於電子裝置300的某些實施例，基板302可包含完成或部分完成之積體電路裝置。非必要地，基板302可為例如矽的半導體或者其可為適合製造電子裝置的另一材料。本發明之一或多個實施例包含具有用以界定至少部分被阻障金屬314所覆蓋之貫通基板穿孔310的壁。
本發明之一或多個實施例包含含有鎳與鈷元素至少其中一者的阻障金屬314。依照本發明之一實施例，電子裝置300具有一層約0.2微米至1微米以及其內所包括之全部數值與範圍的阻障金屬314。對於本發明之一或多個實施例，阻障金屬314包含鎳與鈷元素至少其中一者，而阻障金屬314的厚度約為0.2微米至1微米以及其內所包括之全部數值與範圍。
本發明之附加實施例可具有包含種種材料系統之其中一或多者的潤溼層318。適合使用作為潤溼層318之材料系統的範例包含但不限於：包含錫或錫合金的潤溼層318；包含銀或銀合金的潤溼層318；包含具有3-4原子百分比鎢之銀鎢合金的潤溼層318；包含銅或銅合金的潤溼層318；包含鈷錫合金、鈷銅合金、鈷銀合金、鈷銅錫合金、鈷銅銀合金、鈷銀錫合金、或鈷銅銀錫合金的潤溼層318；包含鎳銅合金、鎳銀合金、鎳銅銀合金、鎳銅錫合金、鎳銀錫合金、或鎳銅銀錫合金的潤溼層318；包含鐵錫合金、鐵銅合金、鐵銀合金、鐵銅錫合金、鐵銅銀合金、鐵銀錫合金、或鐵銅銀錫合金的潤溼層318；包含一層具有第一成分之鎳合金與一層具有第二成分之鎳合金的潤溼層318；包含一層具有第一成分之鈷合金與一層具有第二成分之鈷合金的潤溼層318；包含一層具有第一成分之鐵合金與一層具有第二成分之鐵合金的潤溼層318；更包含硼及/或磷的潤溼層318。
在上述說明書中，已參考具體實施例來說明本發明。然而，熟習本項技藝者可明白在不悖離如以下請求項所提及之本發明範圍的情況下，可進行各種修改與變化。因此，本說明書應被視為具有例示性而非限制性的意義，以及所有此種修改應被包含在本發明範圍內。
以上已說明關於具體實施例的好處、優點、以及問題解決方案。然而，可使任何好處、優點、解決方案發生或使其變得更為顯著的好處、優點、問題解決方案、以及任何元件不應被理解為任何或所有請求項的關鍵、必要、或不可或缺的特徵或元件。
如在此所使用的「包含」、「含有」、「包括」、「具有」、「至少其中一者」或其任何其他變化之詞語，應涵蓋非排他性的包含。例如，包含一系列元件的一種製程、方法、物品、或設備不一定僅限於這些元件，而是可包含未明確列舉或隱含於此種製程、方法、物品、或設備的其他元件。又，除非明確地相反陳述，否則「或」係指包含性的或，而非指排他性的或。例如，下列其中任一者可滿足情況A或B：A係真實(或存在)而B為不真實(或不存在)、A為不真實(或不存在)而B為真實(或存在)、以及A與B兩者皆為真實(或存在)。
40‧‧‧流程圖
50‧‧‧設置基板的步驟
60‧‧‧無電沉積阻障金屬的步驟
70‧‧‧無電沉積潤溼層的步驟
100‧‧‧電子裝置
102‧‧‧基板
106‧‧‧基座
110‧‧‧接點焊墊
112‧‧‧鈍化層
114‧‧‧阻障金屬
118‧‧‧潤溼層
122‧‧‧焊料
124‧‧‧鈍化層
200‧‧‧電子裝置
202‧‧‧基板
210‧‧‧貫通基板穿孔
212‧‧‧貫通基板穿孔導電體
214‧‧‧阻障金屬
218‧‧‧潤溼層
222‧‧‧焊料
224‧‧‧鈍化層
300‧‧‧電子裝置
302‧‧‧基板
310‧‧‧貫通基板穿孔
314‧‧‧阻障金屬
318‧‧‧潤溼層
322‧‧‧焊料
326‧‧‧阻障金屬
330‧‧‧潤溼層
圖1係本發明之一實施例的流程圖。
圖2係本發明之一實施例的圖。
圖3係本發明之一實施例的圖。
圖4係本發明之一實施例的圖。
熟習本項技藝者可明白圖式中的元件係被簡明並清晰地顯示，並且不一定要按照比例繪製。例如，圖式中之若干元件的尺寸可能係相對於其他元件被加以誇大，以協助改善對本發明之實施例的瞭解。
100．．．電子裝置
102．．．基板
106．．．基座
110．．．接點焊墊
112．．．鈍化層
114．．．阻障金屬
118．．．潤溼層
122．．．焊料
124．．．鈍化層

Claims (37)

  1. 一種電子裝置的製造方法，該方法包含下列步驟：設置一基板；至少在該基板部分上無電沉積一阻障金屬；及將具有焊料潤溼性的一實質上無金潤溼層無電沉積到該阻障金屬上。
  2. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該無電沉積一實質上無金潤溼層的步驟係使用包含硼烷的無電沉積配方加以實現。
  3. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該設置一基板的步驟包含設置一包含一或多個電接點焊墊的基板，以及該至少在該基板部分上無電沉積一阻障金屬的步驟包含將該阻障金屬沉積到該一或多個電接點焊墊上。
  4. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該設置一基板的步驟包含設置一包含一或多個貫通基板穿孔導體的基板，以及該至少在該基板部分上無電沉積該阻障金屬的步驟包含將該阻障金屬沉積到該一或多個貫通基板穿孔導體上。
  5. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該設置一基板的步驟包含設置一具有一或多個穿孔的基板，以及該至少在該基板部分上無電沉積該阻障金屬的步驟包含將該阻障金屬沉積到該一或多個穿孔的壁上。
  6. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該至少在該基板部分上無電沉積一阻障金屬的步驟包含沉積包含鈷的一阻障金屬。
  7. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該至少在該基板部分上無電沉積一阻障金屬的步驟包含將該阻障金屬沉積達到0.2微米至1微米以及其內所包括的全部數值與範圍的厚度。
  8. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該無電沉積一實質上無金潤溼層的步驟包含無電沉積錫。
  9. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該無電沉積一實質上無金潤溼層的步驟包含無電沉積銀或銀合金。
  10. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該無電沉積一實質上無金潤溼層的步驟包含無電沉積具有3-4原子百分比鎢的銀鎢合金。
  11. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該無電沉積一實質上無金潤溼層的步驟包含無電沉積鈷錫合金、鈷銅合金、鈷銀合金、鈷銅錫合金、鈷銅銀合金、鈷銀錫合金、或鈷銅銀錫合金。
  12. 如申請專利範圍第11項所述之電子裝置的製造方法，其步驟更包含將硼及/或磷併入該實質上無金潤溼層。
  13. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該無電沉積一實質上無金潤溼層的步驟包含無電沉積鎳銅合金、鎳銀合金、鎳銅銀合金、鎳銅錫合金、鎳銀錫合金、或鎳銅銀錫合金。
  14. 如申請專利範圍第13項所述之電子裝置的製造方法，其步驟更包含將硼及/或磷併入該實質上無金潤溼層。
  15. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該無電沉積一實質上無金潤溼層的步驟包含無電沉積鐵錫合金、鐵銅合金、鐵銀合金、鐵銅錫合金、鐵銅銀合金、鐵銀錫合金、或鐵銅銀錫合金。
  16. 如申請專利範圍第15項所述之電子裝置的製造方法，其步驟更包含將硼及/或磷併入該實質上無金潤溼層。
  17. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該無電沉積一實質上無金潤溼層的步驟包含無電沉積一層具有第一成分的鎳合金與一層具有第二成分的鎳合金。
  18. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該無電沉積一實質上無金潤溼層的步驟包含無電沉積一層具有第一成分的鈷錫合金與一層具有第二成分的鈷錫合金。
  19. 如申請專利範圍第1項所述之電子裝置的製造方法，其中該至少在該基板部分上無電沉積一阻障金屬的步驟、以及該無電沉積具有焊料潤溼性之一實質上無金潤溼層的步驟係藉由下列方式實現：在一溫度範圍內使用一無電沉積浴成分以沉積該阻障金屬並且在另一溫度範圍內使用該無電沉積浴成分以沉積該潤溼層。
  20. 一種電子裝置的製造方法，該方法包含下列步驟：設置一包含一或多個電接點焊墊及/或一或多個貫通基板穿孔導體的基板；至少在該一或多個電接點焊墊及/或該一或多個貫通基板穿孔導體部分上，將一包含鎳與鈷元素至少其中一者的阻障金屬無電沉積達到0.2微米至1微米以及其內所包括之全部數值與範圍的厚度；無電沉積至少其中一者： (1)錫或錫合金；(2)具有3-4原子百分比鎢的銀鎢合金；(3)鈷錫合金、鈷銅合金、鈷銀合金、鈷銅錫合金、鈷銅銀合金、鈷銀錫合金、或鈷銅銀錫合金；(4)鎳銅合金、鎳銀合金、鎳銅銀合金、鎳銅錫合金、鎳銀錫合金、或鎳銅銀錫合金；(5)鐵錫合金、鐵銅合金、鐵銀合金、鐵銅錫合金、鐵銅銀合金、鐵銀錫合金、或鐵銅銀錫合金；(6)一層具有一第一成分的鎳合金與一層具有一第二成分的鎳合金；(7)一層具有一第一成分的鈷合金與一層具有一第二成分的鈷合金；及(8)一層具有一第一成分的鐵合金與一層具有一第二成分的鐵合金，以接觸該阻障金屬而形成具有焊料潤溼性的一實質上無金潤溼層；及將一焊料接點形成於該實質上無金潤溼層。
  21. 一種電子裝置，包含一金屬化堆疊，該金屬化堆疊包含一無電沉積的阻障金屬以及一無電沉積的實質上無金潤溼層，該阻障金屬與該潤溼層接觸，而該潤溼層可被焊料潤溼，其中該阻障金屬具有0.2微米至1微米以及其內所包括之全部數值與範圍的厚度，該阻障金屬包含鎳與鈷元素至少其中一者；其中該潤溼層包含：(1)錫或錫合金；(2)具有3-4原子百分比鎢的銀鎢合金；(3)鈷錫合金、鈷銅合金、鈷銀合金、鈷銅錫合金、鈷銅銀合金、鈷銀錫合金、或鈷銅銀錫合金；(4)鎳銅合金、鎳銀合金、鎳銅銀合金、鎳銅錫合金、鎳銀錫合金、或鎳銅銀錫合金； (5)鐵錫合金、鐵銅合金、鐵銀合金、鐵銅錫合金、鐵銅銀合金、鐵銀錫合金、或鐵銅銀錫合金；(6)一層具有一第一成分的鎳合金與一層具有一第二成分的鎳合金；(7)一層具有一第一成分的鈷合金與一層具有一第二成分的鈷合金；或(8)一層具有一第一成分的鐵合金與一層具有一第二成分的鐵合金；更包含至少部分被該阻障金屬所覆蓋的一或多個電接點焊墊及/或至少部分被該阻障金屬所覆蓋的一或多個貫通基板穿孔導體；以及與該潤溼層接觸的焊料。
  22. 如申請專利範圍第21項所述之電子裝置，其中該基板具有一或多個貫通基板穿孔，形成該一或多個穿孔之該基板的壁係至少部分被該阻障金屬所覆蓋；以及更包含與該潤溼層接觸的焊料，以實質上填滿該一或多個穿孔。
  23. 如申請專利範圍第21項所述之電子裝置，其中該阻障金屬包含鈷。
  24. 如申請專利範圍第21項所述之電子裝置，其中該潤溼層包含錫或錫合金。
  25. 如申請專利範圍第21項所述之電子裝置，其中該潤溼層包含具有3-4原子百分比鎢的銀鎢合金。
  26. 如申請專利範圍第21項所述之電子裝置，其中該潤溼層包含鈷錫合金、鈷銅合金、鈷銀合金、鈷銅錫合金、鈷銅銀合金、鈷銀錫合金、或鈷銅銀錫合金。
  27. 如申請專利範圍第26項所述之電子裝置，其中該潤溼層更包含硼及/或磷。
  28. 如申請專利範圍第21項所述之電子裝置，其中該潤溼層包含鎳銅合金、鎳銀合金、鎳銅銀合金、鎳銅錫合金、鎳銀錫合金、或鎳銅銀錫合金。
  29. 如申請專利範圍第28項所述之電子裝置，其中該潤溼層更包含硼及/或磷。
  30. 如申請專利範圍第21項所述之電子裝置，其中該潤溼層包含鐵錫合金、鐵銅合金、鐵銀合金、鐵銅錫合金、鐵銅銀合金、鐵銀錫合金、或鐵銅銀錫合金。
  31. 如申請專利範圍第30項所述之電子裝置，其中該潤溼層更包含硼及/或磷。
  32. 如申請專利範圍第21項所述之電子裝置，其中該潤溼層包含一層具有一第一成分的鎳錫合金與一層具有一第二成分的鎳錫合金。
  33. 如申請專利範圍第21項所述之電子裝置，其中該潤溼層包含一層具有一第一成分的鈷錫合金與一層具有一第二成分的鈷錫合金。
  34. 一種電子裝置，包含一金屬化堆疊，該金屬化堆疊包含一無電沉積的阻障金屬以及一無電沉積的實質上無金潤溼層，該阻障金屬與該潤溼層接觸，而該潤溼層可被焊料潤溼，其中該阻障金屬包含鎳與鈷元素至少其中一者；其中該潤溼層包含： (1)錫或錫合金；(2)具有3-4原子百分比鎢的銀鎢合金；(3)鈷錫合金、鈷銅合金、鈷銀合金、鈷銅錫合金、鈷銅銀合金、鈷銀錫合金、或鈷銅銀錫合金；(4)鎳銅合金、鎳銀合金、鎳銅銀合金、鎳銅錫合金、鎳銀錫合金、或鎳銅銀錫合金；(5)鐵錫合金、鐵銅合金、鐵銀合金、鐵銅錫合金、鐵銅銀合金、鐵銀錫合金、或鐵銅銀錫合金；(6)一層具有一第一成分的鎳合金與一層具有一第二成分的鎳合金；(7)一層具有一第一成分的鈷合金與一層具有一第二成分的鈷合金；或(8)一層具有一第一成分的鐵合金與一層具有一第二成分的鐵合金；更包含至少部分被該阻障金屬所覆蓋的一或多個電接點焊墊及/或至少部分被該阻障金屬所覆蓋的一或多個貫通基板穿孔導體；以及與該潤溼層接觸的焊料。
  35. 如申請專利範圍第34項所述之電子裝置，其中該潤溼層更包含硼及/或磷。
  36. 如申請專利範圍第34項所述之電子裝置，其中該阻障金屬包含鈷。
  37. 如申請專利範圍第34項所述之電子裝置，其中該基板具有一或多個貫通基板穿孔，形成該一或多個穿孔之該基板的壁係至少部分被該阻障金屬所覆蓋；以及更包含與該潤溼層接觸的焊料，以實質上填滿該一或多個穿孔。
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CN102971840A (zh) 2013-03-13
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US8518815B2 (en) 2013-08-27
SG186360A1 (en) 2013-01-30
KR20130113413A (ko) 2013-10-15
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KR20180085824A (ko) 2018-07-27
KR101882034B1 (ko) 2018-07-25
TW201213609A (en) 2012-04-01
WO2012004710A2 (en) 2012-01-12
US20140054776A1 (en) 2014-02-27
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US20120007239A1 (en) 2012-01-12
US9006893B2 (en) 2015-04-14

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