CN102034787A - 包括无电镀镍层的金属配线结构及其制造方法 - Google Patents
包括无电镀镍层的金属配线结构及其制造方法 Download PDFInfo
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- CN102034787A CN102034787A CN200910225595XA CN200910225595A CN102034787A CN 102034787 A CN102034787 A CN 102034787A CN 200910225595X A CN200910225595X A CN 200910225595XA CN 200910225595 A CN200910225595 A CN 200910225595A CN 102034787 A CN102034787 A CN 102034787A
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- layer
- metal wiring
- wiring structure
- electroless nickel
- insulating barrier
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
Abstract
本文公开了金属配线结构及其制造方法,该金属配线结构包括:在绝缘层上形成的无电镀镍层;以及形成于所述无电镀镍层上的表面处理层。所述金属配线结构具有与基板的种类无关的优异的粘着性,并且易于制造。
Description
相关申请的交叉参考
本申请要求于2009年10月8日申请的、题为“包括无电镀Ni层的金属层结构及其制造方法”的韩国专利申请No.10-2009-0095753的利益,在此将该申请全文引入本申请作为参考。
技术领域
本发明涉及包括无电镀镍层的金属配线结构(metal wiring structure)及其制造方法。
背景技术
近来,在电磁配线基板(electromagnetic wiring substrate)和圆片级芯片尺寸封装技术(wafer level chip size packages,WLSCP)领域中,由于金属配线密度的提高,因此金属配线迅速小型化,因而其宽度和长度显著变小。为此原因,通过半加成法(semi-additive process)来形成金属配线和金属凸点(bump)。
在半加成法中,在绝缘层上物理形成种子层(seed layer),然后使用光刻法在种子层上形成用于形成配线或凸点的抗蚀剂图形。随后,进行电解镀铜或镀焊料,分离抗蚀剂,然后蚀刻不必要的种子层并因此除去该种子层。
同时,依赖于基板的种类,以各种形状和方法来形成种子层,该种子层用作在绝缘层上形成无电镀铜层或镀焊料层的粘合层。例如,在印刷电路板(PCB)中,使用无电镀铜来形成种子层,在如低温共烧陶瓷(LTCC)基板和高温共烧陶瓷(HTCC)基板的陶瓷基板中,通过煅烧钨(W)粉或钼(Mo)粉来形成种子层,或者通过溅射钛(Ti)、钨(W)或铬(Cr)来形成种子层。此外,在如晶片等的硅基板中,通过溅射钛(Ti)、钛-钨(TiW)、镍-铬(NiCr)或铬(Cr)来形成种子层。
然而,这些常规的种子层结构及其形成方法存在以下问题。
首先,尽管无电镀铜层在印刷电路板(PCB)上显示出充分的粘着性(adhesivity),但在陶瓷基板和硅基板上没有显示出充分的粘着性。
另外,尽管通过煅烧方法形成的钨(W)层或钼(Mo)层即使在高温下也具有很高的可靠性,但其问题是,长期的固化加工需要在600℃以上的高温下进行,以煅烧钨(W)或钼(Mo),增加了加工时间,并且加工成本很高。而且,还存在以下问题,很难将钨(W)层或钼(Mo)层涂覆在施加由温度引起的应力时易受损坏的基板、或不耐高温的基板上。
此外,由于种子层以特定的形状密集地形成于绝缘层上,因此通常使用通过溅射钛(Ti)、钛-钨(TiW)、镍-铬(NiCr)或铬(Cr)来形成种子层的方法,但存在的问题是,由于溅射的局限性而很难形成厚膜,并因此另外需要形成镀层的方法。例如,在作为干加工的溅射过程后进行的作为湿加工的镀覆过程时,存在以下问题:极大地增加了加工时间和成本,而且在干加工形成的膜与湿加工形成的膜之间存在严重的应力。
发明内容
因此,产生了本发明,以解决上述问题,并且本发明提供了包括无电镀镍层的金属配线结构,其中,种子层具有的粘着性与基板种类无关,并且该金属配线结构易于制造,本发明还提供了该金属配线结构的制造方法。
本发明的一方面提供了金属配线结构,该金属配线结构包括:形成于绝缘层上的无电镀镍层;以及形成于所述无电镀镍层上的表面处理层。
这里,所述绝缘层可以选自阳极氧化层(anode oxide layer)、陶瓷树脂层、环氧树脂层和硅树脂层。
此外,所述无电镀镍层可以包括形成于该无电镀镍层上的电解镀铜层。
此外,所述表面处理层可以为选自镀金层、无电镀银层、无电镀锡层和预焊剂涂覆层中的一种或多种。
此外,所述金属配线可以为凸点下金属(under bump metal,UBM)膜。
本发明的另一方面提供了制造包括无电镀镍层的金属配线的方法,该方法包括:在绝缘层上形成活性基(reactive group);在所述绝缘层上吸附催化剂颗粒,以活化该绝缘层;将镍离子还原,并接着将该还原的镍离子沉积在所述绝缘层上,以形成无电镀镍层;以及在所述无电镀镍层上形成表面处理层。
这里,在形成所述活性基之前,所述制造金属配线的方法还可以包括:清洁所述绝缘层,以从所述绝缘层上除去有机和无机的污染物;以及,酸洗所述绝缘层,以从所述绝缘层上除去鳞屑(scales)。
此外,在形成所述无电镀镍层和形成所述表面处理层之间,所述制造金属配线的方法还可以包括:在所述无电镀镍层上形成铜镀层。
此外,在形成所述表面处理层时,所述表面处理层可以为选自镀金层、无电镀银层、无电镀锡层和预焊剂涂覆层中的一种或多种。
此外,所述金属配线可以为凸点下金属(UBM)膜。
从下面参考附图的实施方式的描述中,本发明的各种目的、优点和特征将变得显而易见。
用于本说明书和权利要求书的术语和词语不应该被解释为限于通常的含义或词典的定义,而应该基于发明人能适当地定义术语的概念以描述他或她理解的实施本发明的最好方法的规则,将所述术语和词语解释为具有与本发明的技术范围相关的含义和概念。
附图说明
通过下面与附图相结合的详细描述可以更清楚地理解本发明的上述和其它目的、特征和优点。
图1A和图1B为显示根据本发明的第一实施方式的包括无电镀镍层的金属配线结构的截面图;
图2A和图2B为显示根据本发明的第二实施方式的包括无电镀镍层的金属配线结构的截面图;以及
图3为显示制造根据本发明优选的实施方式的包括无电镀镍层的金属配线结构的方法的流程图。
具体实施方式
通过下面的详细描述以及与附图相结合的优选实施方式将更清楚地理解本发明的目的、特征和优点。在所有附图中,使用相同的附图标记来表示相同或相似的部件,并省略其多余的描述。此外,在本发明的描述中,当确定相关领域的详细描述会使本发明的要点不清楚时,则省略其描述。
下文中,将参考附图详细地描述本发明优选的实施方式。
图1A和图1B为显示根据本发明的第一实施方式的包括无电镀镍层的金属配线结构的截面图。下文中,将参考图1A和图1B来描述根据第一实施方式的包括无电镀镍层的金属配线结构。
如图1A和图1B所示,根据该实施方式的金属配线200a具有如下结构:表面处理层240形成于无电镀镍层220上。也就是说,该实施方式的特征是,除了表面处理层240外,金属配线200a具有无电镀镍层220的单层结构。这样,当金属配线具有单层结构时,能够防止由多层结构的中间层界面处存在的应力和热引起的可靠性降低。然而,当金属配线200a由无电镀镍层220形成时,由于无电镀镍层220具有高的电阻,因此优选将该实施方式的金属配线结构用作不受高电阻影响的金属配线结构。
通过无电镀镍方法(参见图3),将无电镀镍层220形成于施覆在金属板110的表面上的绝缘层100a(参见图1A)上或阳极氧化层100b(参见图2B)上。这里,由于无电镀镍层220具有与材料的种类无关的优异的粘着性,因此将无电镀镍层220形成于阳极氧化层100b以及树脂绝缘层100a上,所述树脂绝缘层100a如陶瓷树脂层、环氧树脂层或硅树脂层等。
用于防止金属配线200a氧化并使焊料凸点(solder bump)易于形成的表面处理层240形成于无电镀镍层220上。例如,表面处理层240可以为选自镀金层、无电镀银层、无电镀锡层和预焊剂(有机可焊性保护剂(organic solderability preservative):OSP)涂覆层中的一种或多种。
具有这种结构的金属配线200a具有焊料浸润性(solder wettability),使得焊料凸点以及电路的配线层能够容易地粘着于该金属配线200a上,并可以用作防止焊料成分扩散的凸点下金属(UBM)膜。
图2A和图2B为显示根据本发明的第二实施方式的包括无电镀镍层的金属配线结构的截面图。下文中,将参考图2A和图2B来描述根据第二实施方式的包括无电镀镍层的金属配线结构。与上述第一实施方式的描述相比,在本发明的第二实施方式的描述中,将略去多余的描述。
如图2A和图2B所示,根据该实施方式的金属配线200b具有如下结构:电解镀铜层230形成于无电镀镍层220上,且表面处理层240形成于电解镀铜层230上。也就是说,该实施方式的特征是,金属配线200b具有无电镀镍层220和电解镀铜层230的多层结构。在该实施方式中,电解镀铜层230用于弥补无电镀镍层220的低的电特性。
这里,通过将阴极施加到基板上并将阳极施加到作为铜供给源的阳极球上,并因此产生氧化反应和还原反应,而形成利用无电镀镍层220的导电性(conductivity)的电解镀铜层230,在所述氧化反应中,由镀液和所述阳极球产生铜离子,在所述还原反应中,所述铜离子被镀覆(沉积)到基板上。
图3为显示制造根据本发明优选的实施方式的包括无电镀镍层的金属配线结构的方法的流程图。如图3所示,根据本发明优选的实施方式的包括无电镀镍层的金属配线结构通过以下步骤来形成:预处理(S200)→活化(S300)→无电镀镍(S400)→表面处理(S600)。下文中,根据各个步骤来描述制造金属配线结构的方法。
预处理步骤(S200)为使用有机材料在绝缘层100a上形成活性基,以易于在阳极氧化层100b上形成活性层(active layer)的步骤。在常规的无电镀覆过程中,不进行该预处理步骤,从而不易在绝缘层100a上形成无电镀镍层220,而且即使形成了无电镀镍层220,绝缘层100a与无电镀镍层220之间的粘着也不充分。然而,在本发明中,由于进行了使用有机材料在绝缘层100a上形成活性基的预处理步骤(S200),因此可以更容易地形成所述活化层,并且绝缘层100a与无电镀镍层220之间的粘着充分。
在所述预处理步骤(S200)之前,可以选择性地进行从绝缘层100a的表面上除去有机和无机污染物的清洁步骤(S100)和除去鳞屑的酸洗步骤(S150)。通过清洁步骤(S100)和酸洗步骤(S150),改善了绝缘层100a的浸润性,并因此可以提高催化剂颗粒在所述绝缘层上的吸附性。
活化步骤为形成活性层的步骤。在该活化步骤中,催化剂颗粒(例如:钯(Pd)颗粒)被吸附到绝缘层100a上,然后被强制地离子活化成钯离子,以形成活性层。在此情况下,由于绝缘层100a、特别是阳极氧化层100b上具有通过所述预处理步骤而形成的有机活性基团,因此可以更容易地形成活化层。
无电镀镍步骤(S400)是在绝缘层100a上沉积镍镀层的步骤。例如,通过将绝缘层100a浸入含有硫酸镍的镀镍溶液中来进行无电镀镍步骤(S400)。在此情况中,用镍离子取代钯离子,并因此将金属镍沉积在绝缘层100a上。
表面处理步骤(S600)为形成选自镀金层、无电镀银层、无电镀锡层和预焊剂(有机可焊性保护剂:OSP)涂覆层中的一种或多种表面处理层的步骤。进行表面处理步骤(S600),以防止无电镀镍层220或电解镀铜层230氧化,并改善焊料浸润性(可焊性)。
这里,经常使用镀金层,因为镀金层在一段很长的时期内不会变色,并具有优异的导电性和耐腐蚀性以及低的接触电阻。使用置换镀液(substitutional plating solution)或还原镀液(reductional plating solution),通过电解镀软金方法(electrolytic soft gold plating process)、电解镀硬金方法(electrolytic hard gold plating process)或无电镀金方法来形成所述镀金层。
经常使用无电镀银层,因为该无电镀银层具有优异的耐热性和可焊性,并且该电镀银层是在低的操作温度下制备的,从而防止了基板的翘曲。通过无电镀过程来形成所述无电镀银层。
经常使用无电镀锡层,因为该无电镀锡层具有优异的可焊性和低的腐蚀性,并且易于获得。
经常使用预焊剂(有机可焊性保护剂:OSP)涂覆层,因为该预焊剂涂覆层具有比其它表面处理层更优异的焊接性能,并且是通过使用辊涂(roll coating)、喷涂等来涂覆树脂而形成的。
同时,在表面处理步骤(S600)之前,可以进行用于在无电镀镍层220上形成电解镀铜层的电解镀铜步骤(S450)、以及从无电镀镍层220或电解镀铜层230的表面上除去残留物的水洗步骤(S500)。使用通常使用的方法来进行电解镀铜步骤(S450),并通过喷射非离子水或超纯水来进行水洗步骤(S500)。
如上所述,本发明提供了金属配线结构及其制造方法,因为使用无电镀镍层作为种子层,该金属配线结构具有与基板种类无关的优异的粘着性,并且该金属配线结构易于制造。
根据本发明的金属配线结构,由于与电解镀铜层类似,无电镀镍层是通过湿加工形成的,因此与通过湿溅射过程(wet sputtering process)制造的常规金属配线结构相比,可以将存在于界面处的应力最小化。此外,由于不需要干式设备和湿式设备,因此简化了制造过程,降低了制造成本,并降低了产品的次品率。
尽管出于说明的目的公开了本发明优选的实施方式,但是本领域的技术人员可以理解的是,在不背离由随附的权利要求书公开的本发明的范围和精神的情况下,可以做出各种修改、添加和替换。
对本发明做出的简单的修改、添加和替换都属于本发明的范围,而且随附的权利要求书清楚地限定了本发明的具体范围。
Claims (10)
1.一种金属配线结构,该金属配线结构包括:
形成于绝缘层上的无电镀镍层;以及
形成于所述无电镀镍层上的表面处理层。
2.根据权利要求1所述的金属配线结构,其中,所述绝缘层选自阳极氧化层、陶瓷树脂层、环氧树脂层以及硅树脂层。
3.根据权利要求1所述的金属配线结构,其中,所述无电镀镍层包括形成于该无电镀镍层上的电解镀铜层。
4.根据权利要求1所述的金属配线结构,其中,所述表面处理层为选自镀金层、无电镀银层、无电镀锡层以及预焊剂涂覆层中的一种或多种。
5.根据权利要求1所述的金属配线结构,其中,所述金属配线为凸点下金属膜。
6.一种制造包括无电镀镍层的金属配线结构的方法,该方法包括:
在绝缘层上形成活性基;
在所述绝缘层上吸附催化剂颗粒,以活化所述绝缘层;
将镍离子还原,并接着将该还原的镍离子沉积在所述绝缘层上,以形成无电镀镍层;以及
在所述无电镀镍层上形成表面处理层。
7.根据权利要求6所述的制造金属配线结构的方法,其中,在形成所述活性基之前,该方法还包括:
清洁所述绝缘层,以从所述绝缘层上除去有机和无机的污染物;以及
酸洗所述绝缘层,以从所述绝缘层上除去鳞屑。
8.根据权利要求6所述的制造金属配线结构的方法,其中,在形成所述无电镀镍层和形成所述表面处理层之间,该方法还包括:
在所述无电镀镍层上形成铜镀层。
9.根据权利要求6所述的制造金属配线结构的方法,其中,在形成所述表面处理层时,所述表面处理层为选自镀金层、无电镀银层、无电镀锡层和预焊剂涂覆层中的一种或多种。
10.根据权利要求6所述的制造金属配线结构的方法,其中,所述金属配线为凸点下金属膜。
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KR1020090095753A KR20110038457A (ko) | 2009-10-08 | 2009-10-08 | 무전해 니켈 도금층을 갖는 금속배선 구조 및 그 제조방법 |
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US8450619B2 (en) * | 2010-01-07 | 2013-05-28 | International Business Machines Corporation | Current spreading in organic substrates |
DK2676993T3 (en) | 2012-06-20 | 2015-04-20 | Siemens Ag | Component with a layer which reduces the adhesion and method of making it |
DE102013212474A1 (de) | 2013-06-27 | 2014-12-31 | Siemens Aktiengesellschaft | Pulver führende Komponente mit einer die Haftung vermindernden Schicht und Verfahren zu deren Herstellung |
DE102013217751A1 (de) | 2013-09-05 | 2015-03-05 | Siemens Aktiengesellschaft | Verfahren zum Erzeugen einer Schicht durch chemisches oder elektrochemisches Beschichten |
US20200205295A1 (en) | 2017-06-15 | 2020-06-25 | Jabil Inc. | System, Apparatus and Method for Utilizing Surface Mount Technology on Metal Substrates |
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US5038132A (en) * | 1989-12-22 | 1991-08-06 | Texas Instruments Incorporated | Dual function circuit board, a resistor element therefor, and a circuit embodying the element |
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