TWI553691B - 電漿處理裝置及電漿處理方法 - Google Patents

電漿處理裝置及電漿處理方法 Download PDF

Info

Publication number
TWI553691B
TWI553691B TW101128230A TW101128230A TWI553691B TW I553691 B TWI553691 B TW I553691B TW 101128230 A TW101128230 A TW 101128230A TW 101128230 A TW101128230 A TW 101128230A TW I553691 B TWI553691 B TW I553691B
Authority
TW
Taiwan
Prior art keywords
wafer
plasma
disposed
sample stage
annular member
Prior art date
Application number
TW101128230A
Other languages
English (en)
Chinese (zh)
Other versions
TW201403653A (zh
Inventor
安井尚輝
池田紀彥
荒卷徹
西森康博
Original Assignee
日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201403653A publication Critical patent/TW201403653A/zh
Application granted granted Critical
Publication of TWI553691B publication Critical patent/TWI553691B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H10P50/242—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW101128230A 2012-07-06 2012-08-06 電漿處理裝置及電漿處理方法 TWI553691B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012152005A JP5970268B2 (ja) 2012-07-06 2012-07-06 プラズマ処理装置および処理方法

Publications (2)

Publication Number Publication Date
TW201403653A TW201403653A (zh) 2014-01-16
TWI553691B true TWI553691B (zh) 2016-10-11

Family

ID=49878837

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101128230A TWI553691B (zh) 2012-07-06 2012-08-06 電漿處理裝置及電漿處理方法

Country Status (4)

Country Link
US (2) US20140011365A1 (enExample)
JP (1) JP5970268B2 (enExample)
KR (1) KR101343967B1 (enExample)
TW (1) TWI553691B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10237144B2 (en) * 2012-10-29 2019-03-19 T-Mobile Usa, Inc. Quality of user experience analysis
US10854492B2 (en) * 2015-08-18 2020-12-01 Lam Research Corporation Edge ring assembly for improving feature profile tilting at extreme edge of wafer
CN106558522B (zh) * 2015-09-25 2021-01-29 北京北方华创微电子装备有限公司 卡盘及承载装置
TWI693863B (zh) * 2017-06-27 2020-05-11 日商佳能安內華股份有限公司 電漿處理裝置
JP7033441B2 (ja) * 2017-12-01 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置
JP7140610B2 (ja) * 2018-09-06 2022-09-21 株式会社日立ハイテク プラズマ処理装置
KR102490292B1 (ko) * 2019-08-05 2023-01-20 주식회사 히타치하이테크 플라스마 처리 장치
US20210249232A1 (en) * 2020-02-10 2021-08-12 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for etching
CN115668438A (zh) * 2020-03-27 2023-01-31 朗姆研究公司 用于处理具有缺口的晶片的等离子体排除区域环
US11404250B2 (en) * 2020-07-08 2022-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etcher edge ring with a chamfer geometry and impedance design
CN114695041B (zh) * 2020-12-25 2025-04-08 中微半导体设备(上海)股份有限公司 一种等离子体反应器
JP7638366B2 (ja) * 2021-03-03 2025-03-03 三菱電機株式会社 炭化ケイ素エピタキシャル成長装置および炭化ケイ素エピタキシャル基板の製造方法
CN120418925A (zh) * 2022-12-20 2025-08-01 朗姆研究公司 用于控制衬底凹口附近的等离子体沉积或蚀刻的下等离子体排除区域环

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079820A (ja) * 2002-08-20 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置
JP2005026001A (ja) * 2003-06-30 2005-01-27 Toshiba Lighting & Technology Corp 埋込形標識灯装置
TW200633047A (en) * 2005-03-07 2006-09-16 Hitachi High Tech Corp Plasma processing method and plasma processing device
TW201133605A (en) * 2010-03-16 2011-10-01 Hitachi High Tech Corp Plasma processing apparatus and plasma processing method

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
US5942039A (en) * 1997-05-01 1999-08-24 Applied Materials, Inc. Self-cleaning focus ring
TW506234B (en) * 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
JP3599670B2 (ja) * 2001-01-12 2004-12-08 株式会社日立製作所 プラズマ処理方法および装置
TW554465B (en) * 2002-08-27 2003-09-21 Winbond Electronics Corp Apparatus for supporting wafer in semiconductor process
US20040040663A1 (en) * 2002-08-29 2004-03-04 Ryujiro Udo Plasma processing apparatus
JP4640922B2 (ja) * 2003-09-05 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
JP4584572B2 (ja) 2003-12-22 2010-11-24 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
JP2005260011A (ja) 2004-03-12 2005-09-22 Hitachi High-Technologies Corp ウエハ処理装置およびウエハ処理方法
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US7858155B2 (en) * 2004-11-02 2010-12-28 Panasonic Corporation Plasma processing method and plasma processing apparatus
US7988814B2 (en) * 2006-03-17 2011-08-02 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
KR20080029609A (ko) * 2006-09-29 2008-04-03 주식회사 하이닉스반도체 식각프로파일 휘어짐 방지를 위한 플라즈마 식각 장치
JP4988402B2 (ja) * 2007-03-30 2012-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7758764B2 (en) * 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
US7837827B2 (en) * 2007-06-28 2010-11-23 Lam Research Corporation Edge ring arrangements for substrate processing
JP4594358B2 (ja) 2007-08-13 2010-12-08 株式会社エフオーアイ プラズマ処理装置
WO2009058235A2 (en) * 2007-10-31 2009-05-07 Lam Research Corporation High lifetime consumable silicon nitride-silicon dioxide plasma processing components
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
JP5371466B2 (ja) * 2009-02-12 2013-12-18 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP5227264B2 (ja) 2009-06-02 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置，プラズマ処理方法，プログラム
JP2011035026A (ja) * 2009-07-30 2011-02-17 Seiko Epson Corp ドライエッチング装置、半導体装置の製造方法、制御リング
JP5654297B2 (ja) * 2010-09-14 2015-01-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079820A (ja) * 2002-08-20 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置
JP2005026001A (ja) * 2003-06-30 2005-01-27 Toshiba Lighting & Technology Corp 埋込形標識灯装置
TW200633047A (en) * 2005-03-07 2006-09-16 Hitachi High Tech Corp Plasma processing method and plasma processing device
TW201133605A (en) * 2010-03-16 2011-10-01 Hitachi High Tech Corp Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
US20140011365A1 (en) 2014-01-09
TW201403653A (zh) 2014-01-16
JP5970268B2 (ja) 2016-08-17
KR101343967B1 (ko) 2013-12-20
US20190115193A1 (en) 2019-04-18
US11152192B2 (en) 2021-10-19
JP2014017292A (ja) 2014-01-30

Similar Documents

Publication Publication Date Title
TWI553691B (zh) 電漿處理裝置及電漿處理方法
JP5264231B2 (ja) プラズマ処理装置
CN100385620C (zh) 电极组件
US8084375B2 (en) Hot edge ring with sloped upper surface
JP6442463B2 (ja) 環状のバッフル
US8261691B2 (en) Plasma processing apparatus
US9960014B2 (en) Plasma etching method
CN113348732B (zh) 等离子处理装置
JP2014135512A (ja) プラズマエッチング方法
JP2009123934A (ja) プラズマ処理装置
KR20010087195A (ko) 플라즈마처리장치 및 플라즈마 처리방법
JP2010517295A (ja) 真空チャックを備えるベベルエッチャ
JP2016506592A (ja) 均一なプラズマ密度を有する容量結合プラズマ装置
CN113903647B (zh) 边缘环和蚀刻装置
JP4869610B2 (ja) 基板保持部材及び基板処理装置
KR20170028849A (ko) 포커스 링 및 기판 처리 장치
JP5893260B2 (ja) プラズマ処理装置および処理方法
US12283465B2 (en) Plasma processing apparatus and plasma processing method
JP2004079820A (ja) プラズマ処理装置
JP5064708B2 (ja) プラズマ処理装置
JP4474120B2 (ja) プラズマ処理装置
KR20130070089A (ko) 기판 처리 장치
JP2022014879A (ja) エッジリング及びエッチング装置
JP2008103760A (ja) プラズマ処理装置