TWI553691B - 電漿處理裝置及電漿處理方法 - Google Patents
電漿處理裝置及電漿處理方法 Download PDFInfo
- Publication number
- TWI553691B TWI553691B TW101128230A TW101128230A TWI553691B TW I553691 B TWI553691 B TW I553691B TW 101128230 A TW101128230 A TW 101128230A TW 101128230 A TW101128230 A TW 101128230A TW I553691 B TWI553691 B TW I553691B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- plasma
- disposed
- sample stage
- annular member
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 100
- 238000003672 processing method Methods 0.000 title claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 65
- 239000004020 conductor Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 17
- 239000003989 dielectric material Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 230000009467 reduction Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 213
- 150000002500 ions Chemical class 0.000 description 93
- 238000005530 etching Methods 0.000 description 46
- 239000007789 gas Substances 0.000 description 22
- 230000005684 electric field Effects 0.000 description 12
- 238000005452 bending Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005513 bias potential Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012152005A JP5970268B2 (ja) | 2012-07-06 | 2012-07-06 | プラズマ処理装置および処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201403653A TW201403653A (zh) | 2014-01-16 |
| TWI553691B true TWI553691B (zh) | 2016-10-11 |
Family
ID=49878837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101128230A TWI553691B (zh) | 2012-07-06 | 2012-08-06 | 電漿處理裝置及電漿處理方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20140011365A1 (enExample) |
| JP (1) | JP5970268B2 (enExample) |
| KR (1) | KR101343967B1 (enExample) |
| TW (1) | TWI553691B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10237144B2 (en) * | 2012-10-29 | 2019-03-19 | T-Mobile Usa, Inc. | Quality of user experience analysis |
| US10854492B2 (en) * | 2015-08-18 | 2020-12-01 | Lam Research Corporation | Edge ring assembly for improving feature profile tilting at extreme edge of wafer |
| CN106558522B (zh) * | 2015-09-25 | 2021-01-29 | 北京北方华创微电子装备有限公司 | 卡盘及承载装置 |
| KR102421625B1 (ko) * | 2017-06-27 | 2022-07-19 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치 |
| JP7033441B2 (ja) * | 2017-12-01 | 2022-03-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP7140610B2 (ja) * | 2018-09-06 | 2022-09-21 | 株式会社日立ハイテク | プラズマ処理装置 |
| WO2020100357A1 (ja) * | 2019-08-05 | 2020-05-22 | 株式会社日立ハイテク | プラズマ処理装置 |
| US20210249232A1 (en) * | 2020-02-10 | 2021-08-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for etching |
| CN115668438A (zh) * | 2020-03-27 | 2023-01-31 | 朗姆研究公司 | 用于处理具有缺口的晶片的等离子体排除区域环 |
| US11404250B2 (en) * | 2020-07-08 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma etcher edge ring with a chamfer geometry and impedance design |
| CN114695041B (zh) * | 2020-12-25 | 2025-04-08 | 中微半导体设备(上海)股份有限公司 | 一种等离子体反应器 |
| WO2022185453A1 (ja) * | 2021-03-03 | 2022-09-09 | 三菱電機株式会社 | 炭化ケイ素エピタキシャル成長装置および炭化ケイ素エピタキシャル基板の製造方法 |
| KR20250126086A (ko) * | 2022-12-20 | 2025-08-22 | 램 리써치 코포레이션 | 기판 노치 근방의 플라즈마 증착 또는 에칭을 제어하기 위한 하부 플라즈마 배제 구역 (plasma exclusion zone) 링 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079820A (ja) * | 2002-08-20 | 2004-03-11 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| JP2005026001A (ja) * | 2003-06-30 | 2005-01-27 | Toshiba Lighting & Technology Corp | 埋込形標識灯装置 |
| TW200633047A (en) * | 2005-03-07 | 2006-09-16 | Hitachi High Tech Corp | Plasma processing method and plasma processing device |
| TW201133605A (en) * | 2010-03-16 | 2011-10-01 | Hitachi High Tech Corp | Plasma processing apparatus and plasma processing method |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942039A (en) * | 1997-05-01 | 1999-08-24 | Applied Materials, Inc. | Self-cleaning focus ring |
| US5900064A (en) * | 1997-05-01 | 1999-05-04 | Applied Materials, Inc. | Plasma process chamber |
| TW506234B (en) * | 2000-09-18 | 2002-10-11 | Tokyo Electron Ltd | Tunable focus ring for plasma processing |
| JP3599670B2 (ja) * | 2001-01-12 | 2004-12-08 | 株式会社日立製作所 | プラズマ処理方法および装置 |
| TW554465B (en) * | 2002-08-27 | 2003-09-21 | Winbond Electronics Corp | Apparatus for supporting wafer in semiconductor process |
| US20040040663A1 (en) * | 2002-08-29 | 2004-03-04 | Ryujiro Udo | Plasma processing apparatus |
| TWI488236B (zh) * | 2003-09-05 | 2015-06-11 | Tokyo Electron Ltd | Focusing ring and plasma processing device |
| JP4640922B2 (ja) * | 2003-09-05 | 2011-03-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US7658816B2 (en) * | 2003-09-05 | 2010-02-09 | Tokyo Electron Limited | Focus ring and plasma processing apparatus |
| JP4584572B2 (ja) | 2003-12-22 | 2010-11-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置および処理方法 |
| JP2005260011A (ja) | 2004-03-12 | 2005-09-22 | Hitachi High-Technologies Corp | ウエハ処理装置およびウエハ処理方法 |
| JP2005303099A (ja) * | 2004-04-14 | 2005-10-27 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
| JP5080810B2 (ja) * | 2004-11-02 | 2012-11-21 | パナソニック株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| US7988814B2 (en) * | 2006-03-17 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
| KR20080029609A (ko) * | 2006-09-29 | 2008-04-03 | 주식회사 하이닉스반도체 | 식각프로파일 휘어짐 방지를 위한 플라즈마 식각 장치 |
| JP4988402B2 (ja) * | 2007-03-30 | 2012-08-01 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US7837827B2 (en) * | 2007-06-28 | 2010-11-23 | Lam Research Corporation | Edge ring arrangements for substrate processing |
| US7758764B2 (en) * | 2007-06-28 | 2010-07-20 | Lam Research Corporation | Methods and apparatus for substrate processing |
| JP4594358B2 (ja) | 2007-08-13 | 2010-12-08 | 株式会社エフオーアイ | プラズマ処理装置 |
| KR101645043B1 (ko) * | 2007-10-31 | 2016-08-02 | 램 리써치 코포레이션 | 플라즈마 프로세싱 챔버, 플라즈마 프로세싱 콤포넌트 및 플라즈마 식각 챔버 프로세싱 콤포넌트 제조 방법 |
| US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
| JP5371466B2 (ja) * | 2009-02-12 | 2013-12-18 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| JP5227264B2 (ja) * | 2009-06-02 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置，プラズマ処理方法，プログラム |
| JP2011035026A (ja) * | 2009-07-30 | 2011-02-17 | Seiko Epson Corp | ドライエッチング装置、半導体装置の製造方法、制御リング |
| JP5654297B2 (ja) * | 2010-09-14 | 2015-01-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
-
2012
- 2012-07-06 JP JP2012152005A patent/JP5970268B2/ja active Active
- 2012-07-25 KR KR1020120081226A patent/KR101343967B1/ko active Active
- 2012-08-06 TW TW101128230A patent/TWI553691B/zh active
- 2012-08-21 US US13/590,242 patent/US20140011365A1/en not_active Abandoned
-
2018
- 2018-12-13 US US16/218,703 patent/US11152192B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004079820A (ja) * | 2002-08-20 | 2004-03-11 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| JP2005026001A (ja) * | 2003-06-30 | 2005-01-27 | Toshiba Lighting & Technology Corp | 埋込形標識灯装置 |
| TW200633047A (en) * | 2005-03-07 | 2006-09-16 | Hitachi High Tech Corp | Plasma processing method and plasma processing device |
| TW201133605A (en) * | 2010-03-16 | 2011-10-01 | Hitachi High Tech Corp | Plasma processing apparatus and plasma processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| US20140011365A1 (en) | 2014-01-09 |
| JP2014017292A (ja) | 2014-01-30 |
| JP5970268B2 (ja) | 2016-08-17 |
| TW201403653A (zh) | 2014-01-16 |
| KR101343967B1 (ko) | 2013-12-20 |
| US11152192B2 (en) | 2021-10-19 |
| US20190115193A1 (en) | 2019-04-18 |
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