TWI553691B - 電漿處理裝置及電漿處理方法 - Google Patents

電漿處理裝置及電漿處理方法 Download PDF

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Publication number
TWI553691B
TWI553691B TW101128230A TW101128230A TWI553691B TW I553691 B TWI553691 B TW I553691B TW 101128230 A TW101128230 A TW 101128230A TW 101128230 A TW101128230 A TW 101128230A TW I553691 B TWI553691 B TW I553691B
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TW
Taiwan
Prior art keywords
wafer
plasma
disposed
sample stage
annular member
Prior art date
Application number
TW101128230A
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English (en)
Chinese (zh)
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TW201403653A (zh
Inventor
安井尚輝
池田紀彥
荒卷徹
西森康博
Original Assignee
日立全球先端科技股份有限公司
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Application filed by 日立全球先端科技股份有限公司 filed Critical 日立全球先端科技股份有限公司
Publication of TW201403653A publication Critical patent/TW201403653A/zh
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Publication of TWI553691B publication Critical patent/TWI553691B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H10P50/242—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW101128230A 2012-07-06 2012-08-06 電漿處理裝置及電漿處理方法 TWI553691B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012152005A JP5970268B2 (ja) 2012-07-06 2012-07-06 プラズマ処理装置および処理方法

Publications (2)

Publication Number Publication Date
TW201403653A TW201403653A (zh) 2014-01-16
TWI553691B true TWI553691B (zh) 2016-10-11

Family

ID=49878837

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101128230A TWI553691B (zh) 2012-07-06 2012-08-06 電漿處理裝置及電漿處理方法

Country Status (4)

Country Link
US (2) US20140011365A1 (enExample)
JP (1) JP5970268B2 (enExample)
KR (1) KR101343967B1 (enExample)
TW (1) TWI553691B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10237144B2 (en) * 2012-10-29 2019-03-19 T-Mobile Usa, Inc. Quality of user experience analysis
US10854492B2 (en) * 2015-08-18 2020-12-01 Lam Research Corporation Edge ring assembly for improving feature profile tilting at extreme edge of wafer
CN106558522B (zh) * 2015-09-25 2021-01-29 北京北方华创微电子装备有限公司 卡盘及承载装置
CN110800379B (zh) * 2017-06-27 2022-01-18 佳能安内华股份有限公司 等离子体处理装置
JP7033441B2 (ja) * 2017-12-01 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置
JP7140610B2 (ja) * 2018-09-06 2022-09-21 株式会社日立ハイテク プラズマ処理装置
KR102490292B1 (ko) * 2019-08-05 2023-01-20 주식회사 히타치하이테크 플라스마 처리 장치
US20210249232A1 (en) * 2020-02-10 2021-08-12 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for etching
TWI897938B (zh) * 2020-03-27 2025-09-21 美商蘭姆研究公司 電漿排除區域環、電漿排除區域組件及基板處理系統
US11404250B2 (en) * 2020-07-08 2022-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etcher edge ring with a chamfer geometry and impedance design
CN114695041B (zh) * 2020-12-25 2025-04-08 中微半导体设备(上海)股份有限公司 一种等离子体反应器
JP7638366B2 (ja) * 2021-03-03 2025-03-03 三菱電機株式会社 炭化ケイ素エピタキシャル成長装置および炭化ケイ素エピタキシャル基板の製造方法
CN120418925A (zh) * 2022-12-20 2025-08-01 朗姆研究公司 用于控制衬底凹口附近的等离子体沉积或蚀刻的下等离子体排除区域环

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079820A (ja) * 2002-08-20 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置
JP2005026001A (ja) * 2003-06-30 2005-01-27 Toshiba Lighting & Technology Corp 埋込形標識灯装置
TW200633047A (en) * 2005-03-07 2006-09-16 Hitachi High Tech Corp Plasma processing method and plasma processing device
TW201133605A (en) * 2010-03-16 2011-10-01 Hitachi High Tech Corp Plasma processing apparatus and plasma processing method

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
US5942039A (en) * 1997-05-01 1999-08-24 Applied Materials, Inc. Self-cleaning focus ring
TW506234B (en) * 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
JP3599670B2 (ja) * 2001-01-12 2004-12-08 株式会社日立製作所 プラズマ処理方法および装置
TW554465B (en) * 2002-08-27 2003-09-21 Winbond Electronics Corp Apparatus for supporting wafer in semiconductor process
US20040040663A1 (en) * 2002-08-29 2004-03-04 Ryujiro Udo Plasma processing apparatus
JP4640922B2 (ja) * 2003-09-05 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置
TWI488236B (zh) * 2003-09-05 2015-06-11 東京威力科創股份有限公司 Focusing ring and plasma processing device
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
JP4584572B2 (ja) 2003-12-22 2010-11-24 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
JP2005260011A (ja) 2004-03-12 2005-09-22 Hitachi High-Technologies Corp ウエハ処理装置およびウエハ処理方法
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
WO2006049076A1 (ja) * 2004-11-02 2006-05-11 Matsushita Electric Industrial Co., Ltd. プラズマ処理方法およびプラズマ処理装置
US7988814B2 (en) * 2006-03-17 2011-08-02 Tokyo Electron Limited Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
KR20080029609A (ko) * 2006-09-29 2008-04-03 주식회사 하이닉스반도체 식각프로파일 휘어짐 방지를 위한 플라즈마 식각 장치
JP4988402B2 (ja) * 2007-03-30 2012-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7837827B2 (en) * 2007-06-28 2010-11-23 Lam Research Corporation Edge ring arrangements for substrate processing
US7758764B2 (en) * 2007-06-28 2010-07-20 Lam Research Corporation Methods and apparatus for substrate processing
JP4594358B2 (ja) 2007-08-13 2010-12-08 株式会社エフオーアイ プラズマ処理装置
KR101645043B1 (ko) * 2007-10-31 2016-08-02 램 리써치 코포레이션 플라즈마 프로세싱 챔버, 플라즈마 프로세싱 콤포넌트 및 플라즈마 식각 챔버 프로세싱 콤포넌트 제조 방법
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
JP5371466B2 (ja) * 2009-02-12 2013-12-18 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP5227264B2 (ja) * 2009-06-02 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置，プラズマ処理方法，プログラム
JP2011035026A (ja) * 2009-07-30 2011-02-17 Seiko Epson Corp ドライエッチング装置、半導体装置の製造方法、制御リング
JP5654297B2 (ja) * 2010-09-14 2015-01-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079820A (ja) * 2002-08-20 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置
JP2005026001A (ja) * 2003-06-30 2005-01-27 Toshiba Lighting & Technology Corp 埋込形標識灯装置
TW200633047A (en) * 2005-03-07 2006-09-16 Hitachi High Tech Corp Plasma processing method and plasma processing device
TW201133605A (en) * 2010-03-16 2011-10-01 Hitachi High Tech Corp Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
TW201403653A (zh) 2014-01-16
US20190115193A1 (en) 2019-04-18
US20140011365A1 (en) 2014-01-09
JP2014017292A (ja) 2014-01-30
KR101343967B1 (ko) 2013-12-20
JP5970268B2 (ja) 2016-08-17
US11152192B2 (en) 2021-10-19

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