KR101343967B1 - 플라즈마 처리 장치 및 처리 방법 - Google Patents

플라즈마 처리 장치 및 처리 방법 Download PDF

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KR101343967B1
KR101343967B1 KR1020120081226A KR20120081226A KR101343967B1 KR 101343967 B1 KR101343967 B1 KR 101343967B1 KR 1020120081226 A KR1020120081226 A KR 1020120081226A KR 20120081226 A KR20120081226 A KR 20120081226A KR 101343967 B1 KR101343967 B1 KR 101343967B1
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South Korea
Prior art keywords
wafer
high frequency
plasma
ring
sample
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Korean (ko)
Inventor
나오키 야스이
노리히코 이케다
도루 아라마키
야스히로 니시모리
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020120081226A 2012-07-06 2012-07-25 플라즈마 처리 장치 및 처리 방법 Active KR101343967B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012152005A JP5970268B2 (ja) 2012-07-06 2012-07-06 プラズマ処理装置および処理方法
JPJP-P-2012-152005 2012-07-06

Publications (1)

Publication Number Publication Date
KR101343967B1 true KR101343967B1 (ko) 2013-12-20

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KR1020120081226A Active KR101343967B1 (ko) 2012-07-06 2012-07-25 플라즈마 처리 장치 및 처리 방법

Country Status (4)

Country Link
US (2) US20140011365A1 (enExample)
JP (1) JP5970268B2 (enExample)
KR (1) KR101343967B1 (enExample)
TW (1) TWI553691B (enExample)

Cited By (1)

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KR20220092797A (ko) * 2020-12-25 2022-07-04 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드. 차이나 플라즈마 리액터

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US10237144B2 (en) * 2012-10-29 2019-03-19 T-Mobile Usa, Inc. Quality of user experience analysis
US10854492B2 (en) * 2015-08-18 2020-12-01 Lam Research Corporation Edge ring assembly for improving feature profile tilting at extreme edge of wafer
CN106558522B (zh) * 2015-09-25 2021-01-29 北京北方华创微电子装备有限公司 卡盘及承载装置
CN114373669B (zh) * 2017-06-27 2024-09-17 佳能安内华股份有限公司 等离子体处理装置
JP7033441B2 (ja) * 2017-12-01 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置
JP7140610B2 (ja) 2018-09-06 2022-09-21 株式会社日立ハイテク プラズマ処理装置
CN112616320B (zh) * 2019-08-05 2024-04-05 株式会社日立高新技术 等离子处理装置
US20210249232A1 (en) * 2020-02-10 2021-08-12 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for etching
KR20220160073A (ko) * 2020-03-27 2022-12-05 램 리써치 코포레이션 노치된 (notch) 웨이퍼들을 프로세싱하기 위한 플라즈마-배제-존 (plasma-exclusion-zone) 링들
US11404250B2 (en) * 2020-07-08 2022-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etcher edge ring with a chamfer geometry and impedance design
WO2022185453A1 (ja) * 2021-03-03 2022-09-09 三菱電機株式会社 炭化ケイ素エピタキシャル成長装置および炭化ケイ素エピタキシャル基板の製造方法
KR20250126086A (ko) * 2022-12-20 2025-08-22 램 리써치 코포레이션 기판 노치 근방의 플라즈마 증착 또는 에칭을 제어하기 위한 하부 플라즈마 배제 구역 (plasma exclusion zone) 링

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JP2002208587A (ja) * 2001-01-12 2002-07-26 Hitachi Ltd プラズマ処理方法および装置
JP2004079820A (ja) * 2002-08-20 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置
JP2005277369A (ja) * 2003-09-05 2005-10-06 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法

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TW506234B (en) * 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
TW554465B (en) * 2002-08-27 2003-09-21 Winbond Electronics Corp Apparatus for supporting wafer in semiconductor process
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JP2005026001A (ja) * 2003-06-30 2005-01-27 Toshiba Lighting & Technology Corp 埋込形標識灯装置
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
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JP2005260011A (ja) 2004-03-12 2005-09-22 Hitachi High-Technologies Corp ウエハ処理装置およびウエハ処理方法
JP5080810B2 (ja) * 2004-11-02 2012-11-21 パナソニック株式会社 プラズマ処理方法およびプラズマ処理装置
JP4566789B2 (ja) * 2005-03-07 2010-10-20 株式会社日立ハイテクノロジーズ プラズマ処理方法およびプラズマ処理装置
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KR20080029609A (ko) * 2006-09-29 2008-04-03 주식회사 하이닉스반도체 식각프로파일 휘어짐 방지를 위한 플라즈마 식각 장치
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JP5450187B2 (ja) * 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5654297B2 (ja) * 2010-09-14 2015-01-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002208587A (ja) * 2001-01-12 2002-07-26 Hitachi Ltd プラズマ処理方法および装置
JP2004079820A (ja) * 2002-08-20 2004-03-11 Hitachi High-Technologies Corp プラズマ処理装置
JP2005277369A (ja) * 2003-09-05 2005-10-06 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220092797A (ko) * 2020-12-25 2022-07-04 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드. 차이나 플라즈마 리액터
KR102693725B1 (ko) * 2020-12-25 2024-08-09 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드. 차이나 플라즈마 리액터

Also Published As

Publication number Publication date
US20190115193A1 (en) 2019-04-18
TWI553691B (zh) 2016-10-11
JP5970268B2 (ja) 2016-08-17
US20140011365A1 (en) 2014-01-09
TW201403653A (zh) 2014-01-16
US11152192B2 (en) 2021-10-19
JP2014017292A (ja) 2014-01-30

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