TWI538242B - 太陽能電池之製造裝置 - Google Patents
太陽能電池之製造裝置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 7
- 230000035515 penetration Effects 0.000 claims 2
- 239000007789 gas Substances 0.000 description 39
- 239000010409 thin film Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 238000013022 venting Methods 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002860 competitive effect Effects 0.000 description 2
- 208000028659 discharge Diseases 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
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- Y02E10/50—Photovoltaic [PV] energy
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Description
本發明大體上係關於用於製造光伏打(PV)太陽能電池或薄膜(TF)模組之設備領域。在一些實施例中,本發明係關於一種氣體輸送系統及一種氣體排放系統。
本申請案主張2009年2月27日申請之美國臨時申請案第61/155,948號及2010年2月24日申請之美國非臨時申請案第12/711,838號之優先權,該兩案之全文以引用的方式併入本文中。
太陽能正作為一優秀的可再生能源而被廣泛地接受。已在過去的70年中對可將太陽光轉換成電之光伏打(PV)電池進行了研究。因為PV電池展現不良轉換效率且製造昂貴,所以對其等之採用及廣泛使用已不景氣。因此,使用PV電池來產生電之經濟性($/Watt)對諸如煤、石油、天然氣等等之傳統來源已不具競爭力。$/Watt度量表示用以產生一瓦特能量的總系統成本。較低的PV太陽能電池效率及較高的PV太陽能電池系統成本增加此度量且降低PV太陽能電池系統相對於傳統能量產生系統的競爭力。
設計及製造之新近進展已改良PV太陽能電池的效率且降低製造成本使得基於PV之太陽能系統具有經改良的經濟性。目標是在不久的將來,基於PV之太陽能系統將能夠以對傳統電產生方法具有競爭力之成本產生電。為實現此目標,必須取得進展以繼續改良該等PV太陽能電池的轉換效率且降低製造成本。
在製造PV太陽能電池或TF模組之另一步驟中,通常在用於將若干基板曝露於各種氣體之設備中處理該等基板。可加熱該等基板且可用該等氣體來摻雜該等基板以改變其等之電性質或化學性質,於該等基板上沈積材料,自該等基板移除材料,或改變該等基板之表面性質等。在該設備含有用於同時處理大批基板之一大圍封體之情況下,重要的是均勻地處理該等基板。
用於在基於PV之太陽能電池或TF模組的製造期間以一氣體處理若干基板之目前設備遭受若干問題。此等問題之實例可為高設備成本、低生產量、大佔據面積、不良性能、氣體的不均勻供應、反應副產物的不均勻排放,及其他。此等問題可個別或結合地起作用以降低該等PV太陽能電池或TF模組的效率或增加該等PV太陽能電池或TF模組的製造成本。此將增加用於評估能量系統性能之$/Watt經濟性度量且使PV太陽能系統的採用變得不景氣。因此,需要在用於製造解決此等問題之PV太陽能電池或模組的設備中使用氣體輸送及排放處置系統。
在本發明之一些實施例中,提供氣體輸送及排放系統以在用於處理太陽能電池或TF模組基板之一圍封體中使用。該氣體輸送系統包括具有沿著注射器之長度配置之一或多個孔之一或多個注射器。該等孔係以相對於該等基板中心線之一角度範圍配置使得該等基板被均勻曝露於來自該等注射器之氣體。此外,該氣體排放系統包括具有沿著歧管之長度配置之一或多個孔之一或多個排放歧管。該等孔係以相對於該等基板中心線之一角度範圍配置使得該等基板隨著從圍封體移除反應副產物而被均勻地曝露於來自該等輸送氣體注射器之氣體。該等氣體輸送注射器及該等氣體排放歧管內之孔的相對大小經選擇使得該等基板被均勻地曝露於來自該等輸送氣體注射器之氣體。
如以下所詳細描述,根據本發明達成此等優點及其他優點。
為了促進瞭解,已使用相同參考數字(若可能)以指定諸圖式所共有之相同元件。該等圖式非按比例繪製且該等圖式中之各種元件的相對尺寸係經示意性描繪且非按比例繪製。
藉由結合隨附圖式考慮以下詳細描述,可容易地瞭解本發明之技術。
在考慮以下描述之後,熟練此項技術者將清楚地認知可在PV太陽能電池或TF模組製造中容易地使用本發明之教示。
PV太陽能系統之一組態包括PV太陽能模組。PV太陽能模組之一形式可由複數個串聯或並聯連接的PV太陽能電池構成。該等PV太陽能電池可基於單晶半導體基板或基於多晶半導體基板。合適的半導體基板之實例包括Si、多晶矽,及GaAs等。為求本揭示內容之語言經濟性,片語「PV太陽能電池」應被瞭解為意指用於一PV太陽能模組製造的半導體基板。
PV太陽能模組之一第二形式可藉由將半導體材料薄膜施加於剛性基板或撓性基板上而構建。半導體薄膜之實例包括非晶矽、CdTe、CIGS(Cu-In-Ga-S;或Cu-In-Ga-Se),及有機半導體材料等。一典型剛性基板之一實例為一玻璃片。撓性基板之實例包括金屬輥或箔、聚合物材料輥,及其他撓性材料。為求本揭示內容之語言經濟性,片語「TF模組」應被瞭解為意指藉由將半導體材料薄膜施加於一剛性基板或一撓性基板上而形成的PV太陽能模組。
生產PV太陽能電池或TF模組的典型製造序列包括若干步驟,其中在被保持於一高溫的同時,諸基板被曝露於多種氣體。該等氣體與該等基板相互作用以實現若干處理。此等處理之實例包含引進摻雜物種以改變基板的電特性(即,用B、P、As等摻雜)、該等氣體與基板表面反應以生成一薄膜(即,氧化Si以形成SiO2)、使該等氣體反應以在基板表面上沈積一薄膜(即,沈積(SixNy))、該等氣體與基板表面或與該表面上之一薄膜反應以從該表面移除材料(即,從該表面移除介電質層)。在PV太陽能電池或TF模組製造中,典型的是在一爐內處理該等基板。水平爐係用於在PV太陽能電池製造期間處理基板之一共同系統。諸水平爐具有用以以一單一處理序列處理500個基板之多之容量。此外,水平爐系統通常包括至多四個處理室(其允許同時處理至多2000個基板)。
圖1係根據本發明之一實施例之一處理系統之一示意性圖解。處理室101通常係一石英管。該處理室通常含於具有一圓形橫截面之一加熱系統(未顯示)內。該加熱系統通常包括多個控制區使得可沿著處理室101之長度獨立控制溫度。該加熱系統及該處理室通常係以一同軸組態配置。該加熱器之多個控制區係使用一多重接面熱電偶(TC)總成予以監測,該TC總成係含於整合於處理室101內之一石英殼層107內。該TC總成含有每一控制區之至少一TC接面。在該處理序列期間,該等基板109係含於處理室101內。該等基板係經過處理室之一敞開端部而引進處理室。在該處理序列期間,可藉由一門機構113關閉該管之敞開端部以防止氣體從該處理室逸出。在基板與該門機構之間放置一熱總成111以改良處理室內的熱均勻性且保護該門機構避免使之曝露於高溫。
在傳統水平爐內,氣體係透過處理室之一端部而引進且自相對端部排放。基板溫度、氣體溫度、氣體流速,及氣體組成之差異造成基板與氣體之間之不均勻相互作用。
在本發明之一些實施例中,氣體係透過含於處理室內之一或多個注射器歧管103而引進。注射器歧管103為含有沿著其等之長度之至少三個分布孔的密封管。分布孔的大小可相等或可沿著注射器歧管之長度變化。分布孔的大小可相等或可在使用多於一個注射器歧管之組態的注射器歧管之間變化。分布孔的間隔可相等或可沿著注射器歧管之長度變化。分布孔的間隔可相等或可在使用多於一個注射器歧管之組態的注射器歧管之間變化。
在本發明之一些實施例中,反應副產物係透過含於處理室內之一或多個排放歧管105而排放。排放歧管105為含有沿著其等之長度之至少三個排放孔的密封管。排放歧管內之孔的數目可小於、等於,或大於注射器歧管內之孔的數目。有利的是,排放歧管內之孔的數目係約等於注射器歧管內之孔的數目。排放孔的大小可相等或可沿著排放歧管之長度變化。排放孔的大小可相等或可在使用多於一個排放歧管之組態的排放歧管之間變化。該等排放歧管內之孔的總面積(即,所有排放歧管內之所有孔之經加總面積)可小於、等於,或大於該等注射器歧管內之孔的總面積(即,所有注射器歧管內之所有孔之經加總面積)。有利的是,該等排放歧管內之孔的總面積係該等注射器歧管內之孔的總面積之約兩倍。排放孔間隔可相等或可沿著排放歧管之長度變化。排放孔的間隔可相等或可在使用多於一個排放歧管之組態的排放歧管之間變化。排放孔的間隔可小於、等於,或大於注射器歧管之孔的間隔。有利的是,排放孔的間隔可為約等於注射器歧管之孔的間隔。
圖2係貫穿圖1之處理系統之一橫截面圖之一示意性圖解。基板109被固持於載體或舟皿201內(通常由石英製成)且大致居中於處理室101內。用於控制加熱器總成(未顯示)之熱電偶總成係含於定位於處理室101內之殼層107內。
諸氣體係透過含於處理室內之一或多個注射器歧管103而引進。該等注射器歧管被繪示為經組態而在基板之下,但是其等可以任何組態放置於該處理室內(即,頂部、側面等)。圖2繪示兩個氣體注射器歧管,但是顯然可使用任意數目個氣體注射器歧管。
反應副產物係透過含於處理室內之一或多個排放歧管105而排放。該等排放歧管被繪示為經組態而在基板之上,但是其等可以任何組態放置於該處理室內(即,底部、側面等)。該等注射器歧管及該等排放歧管被有利地組態於處理室之相對側(即,頂部/底部、左側/右側)使得氣體自該注射器歧管流動橫跨基板表面且流至排放歧管。圖2繪示兩個氣體排放歧管,但是顯然可使用任意數目個氣體排放歧管。
圖3係貫穿圖1之處理系統之一橫截面圖之一示意性圖解。該等注射器歧管之出口孔之對準係由線301a、301b表示。該等注射器歧管之出口孔之對準角度影響氣體與基板之反應的均勻性。該等注射器歧管之出口孔之對準角度將使用圖3所示之圖例加以描述,其中一「0度」對準角度應被瞭解為描述如下之一注射器歧管,其中氣體以平行於經繪製通過該注射器歧管接觸該處理室之點之正切線之一角度離開該注射器歧管。如所示,該對準角度將藉由以一順時針方式沿著圓周移動而增加且90度角始終指向處理室之縱軸。已顯示注射器歧管103a及103b之各者之代表性角度:90度、180度,及270度。
注射器歧管103a之對準角度301a可在0度與180度之間且有利的是在30度與60度之間。注射器歧管103b之對準角度301b可在0度與180度之間且有利的是在120度與150度之間。
排放歧管之進口孔之對準係由線303a、303b表示。該等排放歧管之進口孔之對準角度影響氣體與基板之反應的均勻性。該等排放歧管之出口孔之對準角度將使用圖3所示之圖例加以描述,其中一「0度」對準角度將被瞭解為描述如下之一排放歧管,其中氣體以平行於經繪製通過該排放歧管接觸該處理室之點之正切線之一角度離開該排放歧管。如所示,對準角度將藉由以一順時針方式沿著圓周移動而增加且90度角始終指向處理室之中心。已顯示排放歧管105a及105b之各者之代表性角度:90度、180度,及270度。
排放歧管105a之對準角度303a可在0度與180度之間且有利的是在120度與150度之間。排放歧管105b之對準角度303b可在0度與180度之間且有利的是在30度與60度之間。
雖然本文已詳細顯示及描述併入本發明之教示之各種實施例,但是熟練此項技術者可容易地設計仍併入此等教示之許多其他經變化之實施例。
101...處理室
103...注射器歧管
103a...注射器歧管
103b...注射器歧管
105...排放歧管
105a...排放歧管
105b...排放歧管
107...石英殼層
109...基板
111...熱總成
113...門機構
201...載體
301a...線
301b...線
303a...線
303b...線
圖1係根據本發明之一實施例之一處理系統之一示意性圖解;
圖2係貫穿圖1之處理系統之一橫截面圖之一示意性圖解;及
圖3係貫穿圖1之處理系統之一橫截面圖之一示意性圖解。
101...處理室
103...注射器歧管
105...排放歧管
107...石英殼層
109...基板
111...熱總成
113...門機構
Claims (14)
- 一種用於處理基板之裝置,其包括:一處理室,其能夠固持複數個基板;其中該處理室之形狀為具有一縱軸之實質圓柱形(substantially cylindrical);其中該處理室包括含於其中之一或多個注射器歧管(injector manifolds),該一或多個注射器歧管具有實質上平行於該處理室之縱軸之多個縱軸;其中該處理室包括含於其中之一或多個排放歧管,該一或多個排放歧管具有實質上平行於該處理室之縱軸之多個縱軸;其中該處理室包括含於其中之用於固持多個熱電偶(thermocouples)之一或多個殼層(sheaths),用於固持該等熱電偶之該一或多個殼層具有實質上平行於該處理室之縱軸之多個縱軸;其中該處理室在圓柱形形狀的一第一端部係實質上封閉且在該圓柱形形狀的一第二端部係敞開的,沿該處理室之縱軸的該第一端部相對於該第二端部;其中該第一封閉端部具有用於該一或多個注射器歧管、該一或多個排放歧管及用於固持該等熱電偶之該一或多個殼層之通過該第一封閉端部壁之多個穿透(penetrations);其中該處理室包含一門機構,以封閉該處理室之敞開的該第二端部, 其中該一或多個注射器歧管包括沿著其長度分布之多個孔且該該一或多個排放歧管包括沿著其長度分布之多個孔;及其中有至少兩個注射器歧管且在一第一注射器歧管中的該等孔定向於30度與60度之間之一角度,並且在一第二注射器歧管中的該等孔定向於120度與150度之間之一角度,其中一0度角為平行於經繪製通過該歧管接觸該處理室的點之正切線之角度,且該等角度以一順時針方式增加且90度角指向該處理室之縱軸。
- 如請求項1之裝置,其中該一或多個注射器歧管係與該一或多個排放歧管相對地位於該處理室之相對側。
- 如請求項2之裝置,其中該一或多個注射器歧管包括沿著其等之長度分布之至少三個孔且該一或多個排放歧管包括沿著其等之長度分布之至少三個孔。
- 如請求項3之裝置,其中該等注射器歧管的該至少三個孔係沿著該一或多個注射器歧管之長度均勻地分布。
- 如請求項3之裝置,其中該等注射器歧管的該至少三個孔係沿著該一或多個注射器歧管之長度非均勻地分布。
- 如請求項3之裝置,其中沿著該一或多個注射器歧管之長度分布之該至少三個孔具有實質上相等的大小。
- 如請求項3之裝置,其中沿著該一或多個注射器歧管之長度分布之該至少三個孔具有實質上不相等的大小。
- 如請求項3之裝置,其中該等注射器歧管的該至少三個孔係沿著該一或多個排放歧管之長度均勻地分布。
- 如請求項3之裝置,其中該至少三個孔係沿著該一或多個排放歧管之長度非均勻地分布。
- 如請求項3之裝置,其中沿著該一或多個排放歧管之長度分布之該至少三個孔具有實質上相等的大小。
- 如請求項3之裝置,其中沿著該一或多個排放歧管之長度分布之該至少三個孔具有實質上不相等的大小。
- 如請求項3之裝置,其中沿著該一或多個排放歧管之長度分布之該至少三個孔之面積的和係等於或大於沿著該一或多個注射器歧管之長度分布之該至少三個孔之面積的和。
- 如請求項1之裝置,其中有至少兩個排放歧管且在一第一排放歧管中的該等孔定向於120度與150度之間之一角度,並且在一第二排放歧管中的該等孔定向於30度與60度之間之一角度。
- 如請求項1之裝置,其中該處理室為一石英管,且僅有通過該石英管的該等穿透係穿過該第一封閉端部壁。
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KR (1) | KR20110138222A (zh) |
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- 2010-02-26 WO PCT/US2010/025518 patent/WO2010099392A1/en active Application Filing
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Also Published As
Publication number | Publication date |
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