TWI528426B - 具有覆蓋層之基板的沈積後清理方法及配方 - Google Patents
具有覆蓋層之基板的沈積後清理方法及配方 Download PDFInfo
- Publication number
- TWI528426B TWI528426B TW097149704A TW97149704A TWI528426B TW I528426 B TWI528426 B TW I528426B TW 097149704 A TW097149704 A TW 097149704A TW 97149704 A TW97149704 A TW 97149704A TW I528426 B TWI528426 B TW I528426B
- Authority
- TW
- Taiwan
- Prior art keywords
- concentration
- cleaning solution
- integrated circuit
- amine
- acid
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0085—Apparatus for treatments of printed circuits with liquids not provided for in groups H05K3/02 - H05K3/46; conveyors and holding means therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
- H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1642707P | 2007-12-21 | 2007-12-21 | |
| US12/334,462 US8404626B2 (en) | 2007-12-21 | 2008-12-13 | Post-deposition cleaning methods and formulations for substrates with cap layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200945424A TW200945424A (en) | 2009-11-01 |
| TWI528426B true TWI528426B (zh) | 2016-04-01 |
Family
ID=40788967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097149704A TWI528426B (zh) | 2007-12-21 | 2008-12-19 | 具有覆蓋層之基板的沈積後清理方法及配方 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8404626B2 (https=) |
| JP (2) | JP5804706B2 (https=) |
| KR (2) | KR101633940B1 (https=) |
| CN (1) | CN101971296B (https=) |
| TW (1) | TWI528426B (https=) |
| WO (1) | WO2009086231A2 (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12139693B2 (en) | 2020-01-28 | 2024-11-12 | Fujifilm Corporation | Treatment liquid and method for treating object to be treated |
| US12187984B2 (en) | 2019-09-02 | 2025-01-07 | Fujifilm Corporation | Treatment liquid and method for treating object to be treated |
| TWI902733B (zh) * | 2019-12-26 | 2025-11-01 | 日商富士軟片股份有限公司 | 洗淨液、洗淨方法 |
Families Citing this family (29)
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| US7772128B2 (en) * | 2006-06-09 | 2010-08-10 | Lam Research Corporation | Semiconductor system with surface modification |
| US9058975B2 (en) * | 2006-06-09 | 2015-06-16 | Lam Research Corporation | Cleaning solution formulations for substrates |
| US8404626B2 (en) | 2007-12-21 | 2013-03-26 | Lam Research Corporation | Post-deposition cleaning methods and formulations for substrates with cap layers |
| US9691622B2 (en) | 2008-09-07 | 2017-06-27 | Lam Research Corporation | Pre-fill wafer cleaning formulation |
| US8361237B2 (en) * | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
| US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8309502B2 (en) * | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| US8614053B2 (en) | 2009-03-27 | 2013-12-24 | Eastman Chemical Company | Processess and compositions for removing substances from substrates |
| KR20100110123A (ko) * | 2009-04-02 | 2010-10-12 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| KR101801413B1 (ko) | 2009-12-23 | 2017-12-20 | 램 리써치 코포레이션 | 퇴적 후 웨이퍼 세정 포뮬레이션 |
| US8632628B2 (en) * | 2010-10-29 | 2014-01-21 | Lam Research Corporation | Solutions and methods for metal deposition |
| US9029268B2 (en) | 2012-11-21 | 2015-05-12 | Dynaloy, Llc | Process for etching metals |
| US8603913B1 (en) * | 2012-12-20 | 2013-12-10 | Lam Research Corporation | Porous dielectrics K value restoration by thermal treatment and or solvent treatment |
| EP2971248B1 (en) * | 2013-03-15 | 2021-10-13 | CMC Materials, Inc. | Aqueous cleaning composition for post copper chemical mechanical planarization |
| JP6599322B2 (ja) | 2013-10-21 | 2019-10-30 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 表面の残留物を除去するための洗浄配合物 |
| KR20230129193A (ko) | 2013-12-06 | 2023-09-06 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 표면 잔류물 제거용 세정 제형 |
| JP6568198B2 (ja) * | 2014-07-18 | 2019-08-28 | キャボット マイクロエレクトロニクス コーポレイション | Cmp後の洗浄組成物及びそれに関連する方法 |
| CN106536668A (zh) * | 2014-07-18 | 2017-03-22 | 嘉柏微电子材料股份公司 | 使用二烷基羟胺来对抗分解以使三(2‑羟乙基)甲基氢氧化铵稳定化 |
| JP6486652B2 (ja) * | 2014-10-31 | 2019-03-20 | 東京応化工業株式会社 | リソグラフィー用洗浄液、及び基板の洗浄方法 |
| US10301580B2 (en) * | 2014-12-30 | 2019-05-28 | Versum Materials Us, Llc | Stripping compositions having high WN/W etching selectivity |
| KR101854510B1 (ko) | 2015-12-11 | 2018-05-03 | 삼성에스디아이 주식회사 | 금속 배선 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
| SG11201906882RA (en) * | 2017-02-10 | 2019-08-27 | Fujifilm Electronic Materials Usa Inc | Cleaning formulations |
| GB2567456B (en) | 2017-10-12 | 2021-08-11 | Si Group Switzerland Chaa Gmbh | Antidegradant blend |
| CN108377615B (zh) * | 2018-03-15 | 2020-12-29 | 昆山长优电子材料有限公司 | 用于pcb图形转移前处理制程的铜面键合溶液 |
| CN111902379B (zh) | 2018-03-28 | 2023-02-17 | 富士胶片电子材料美国有限公司 | 清洗组合物 |
| GB201807302D0 (en) | 2018-05-03 | 2018-06-20 | Addivant Switzerland Gmbh | Antidegradant blend |
| JP6858209B2 (ja) * | 2019-02-20 | 2021-04-14 | 東京応化工業株式会社 | リソグラフィー用洗浄液、及び基板の洗浄方法 |
| CN110003996B (zh) * | 2019-05-21 | 2021-03-23 | 广东剑鑫科技股份有限公司 | 一种浸泡液及其制备方法和使用方法 |
| WO2026028915A1 (ja) * | 2024-08-01 | 2026-02-05 | 三菱瓦斯化学株式会社 | 二次元材料薄膜の剥離防止薬液とその使用 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5909742A (en) * | 1993-03-26 | 1999-06-08 | Betzdearborn Inc. | Metal cleaning method |
| TW416987B (en) * | 1996-06-05 | 2001-01-01 | Wako Pure Chem Ind Ltd | A composition for cleaning the semiconductor substrate surface |
| US20010052351A1 (en) * | 1998-09-29 | 2001-12-20 | Brian J. Brown | Method for cleaning semiconductor wafer having copper structure formed thereon |
| JP2002069495A (ja) * | 2000-06-16 | 2002-03-08 | Kao Corp | 洗浄剤組成物 |
| US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| JP4942263B2 (ja) * | 2001-08-31 | 2012-05-30 | ラムリサーチ株式会社 | 洗浄装置 |
| US6913651B2 (en) * | 2002-03-22 | 2005-07-05 | Blue29, Llc | Apparatus and method for electroless deposition of materials on semiconductor substrates |
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| JP4261931B2 (ja) * | 2002-07-05 | 2009-05-13 | 株式会社荏原製作所 | 無電解めっき装置および無電解めっき後の洗浄方法 |
| US6846519B2 (en) * | 2002-08-08 | 2005-01-25 | Blue29, Llc | Method and apparatus for electroless deposition with temperature-controlled chuck |
| KR100536593B1 (ko) * | 2002-12-05 | 2005-12-14 | 삼성전자주식회사 | 선택적인 막 제거를 위한 세정 용액 및 그 세정 용액을사용하여 실리사이드 공정에서 막을 선택적으로 제거하는방법 |
| JP4419528B2 (ja) * | 2003-01-07 | 2010-02-24 | 東ソー株式会社 | 洗浄液及びそれを用いた洗浄方法 |
| TWI258504B (en) * | 2003-01-07 | 2006-07-21 | Tosoh Corp | Washing solution and washing method using the same |
| US6911067B2 (en) * | 2003-01-10 | 2005-06-28 | Blue29, Llc | Solution composition and method for electroless deposition of coatings free of alkali metals |
| US6902605B2 (en) * | 2003-03-06 | 2005-06-07 | Blue29, Llc | Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper |
| US6794288B1 (en) * | 2003-05-05 | 2004-09-21 | Blue29 Corporation | Method for electroless deposition of phosphorus-containing metal films onto copper with palladium-free activation |
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| JP4390616B2 (ja) * | 2004-04-27 | 2009-12-24 | Necエレクトロニクス株式会社 | 洗浄液及び半導体装置の製造方法 |
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| JP2006106616A (ja) * | 2004-10-08 | 2006-04-20 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト除去用処理液および基板の処理方法 |
| JP2006178423A (ja) * | 2004-11-25 | 2006-07-06 | Kyowa Hakko Chemical Co Ltd | 化学増幅ポジ型レジスト組成物 |
| US7247579B2 (en) * | 2004-12-23 | 2007-07-24 | Lam Research Corporation | Cleaning methods for silicon electrode assembly surface contamination removal |
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| KR101070204B1 (ko) * | 2006-02-01 | 2011-10-06 | 자이단호진 고쿠사이카가쿠 신고우자이단 | 반도체 장치의 제조 방법 및 반도체 표면의 마이크로러프니스 저감 방법 |
| JP2007250915A (ja) * | 2006-03-16 | 2007-09-27 | Ebara Corp | 基板処理方法および基板処理装置 |
| US20080076688A1 (en) * | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
| US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
| JP5647517B2 (ja) * | 2007-05-17 | 2014-12-24 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | Cmp後洗浄配合物用の新規な酸化防止剤 |
| US8404626B2 (en) | 2007-12-21 | 2013-03-26 | Lam Research Corporation | Post-deposition cleaning methods and formulations for substrates with cap layers |
-
2008
- 2008-12-13 US US12/334,462 patent/US8404626B2/en not_active Expired - Fee Related
- 2008-12-19 TW TW097149704A patent/TWI528426B/zh active
- 2008-12-20 WO PCT/US2008/087878 patent/WO2009086231A2/en not_active Ceased
- 2008-12-20 CN CN200880127389.9A patent/CN101971296B/zh active Active
- 2008-12-20 JP JP2010539925A patent/JP5804706B2/ja active Active
- 2008-12-20 KR KR1020107016277A patent/KR101633940B1/ko active Active
- 2008-12-20 KR KR1020167005186A patent/KR101698731B1/ko active Active
-
2013
- 2013-03-22 US US13/849,449 patent/US8790465B2/en active Active
- 2013-12-17 JP JP2013260355A patent/JP2014088569A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12187984B2 (en) | 2019-09-02 | 2025-01-07 | Fujifilm Corporation | Treatment liquid and method for treating object to be treated |
| TWI902733B (zh) * | 2019-12-26 | 2025-11-01 | 日商富士軟片股份有限公司 | 洗淨液、洗淨方法 |
| US12139693B2 (en) | 2020-01-28 | 2024-11-12 | Fujifilm Corporation | Treatment liquid and method for treating object to be treated |
| TWI879863B (zh) * | 2020-01-28 | 2025-04-11 | 日商富士軟片股份有限公司 | 處理液、被處理物的處理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009086231A3 (en) | 2009-08-27 |
| KR101633940B1 (ko) | 2016-06-27 |
| US20090162537A1 (en) | 2009-06-25 |
| JP2011508438A (ja) | 2011-03-10 |
| CN101971296B (zh) | 2012-05-30 |
| US20130323410A1 (en) | 2013-12-05 |
| JP2014088569A (ja) | 2014-05-15 |
| US8404626B2 (en) | 2013-03-26 |
| KR20100108397A (ko) | 2010-10-06 |
| CN101971296A (zh) | 2011-02-09 |
| KR101698731B1 (ko) | 2017-01-20 |
| JP5804706B2 (ja) | 2015-11-04 |
| KR20160030326A (ko) | 2016-03-16 |
| WO2009086231A2 (en) | 2009-07-09 |
| US8790465B2 (en) | 2014-07-29 |
| TW200945424A (en) | 2009-11-01 |
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