TWI527131B - 以低壓力進行分子黏附鍵結之方法 - Google Patents
以低壓力進行分子黏附鍵結之方法 Download PDFInfo
- Publication number
- TWI527131B TWI527131B TW100122921A TW100122921A TWI527131B TW I527131 B TWI527131 B TW I527131B TW 100122921 A TW100122921 A TW 100122921A TW 100122921 A TW100122921 A TW 100122921A TW I527131 B TWI527131 B TW I527131B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafers
- wafer
- pressure
- bonding
- micro
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
- H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1922—Preparing SOI wafers using silicon etch back techniques, e.g. BESOI or ELTRAN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Micromachines (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Pressure Sensors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1056566A FR2963848B1 (fr) | 2010-08-11 | 2010-08-11 | Procede de collage par adhesion moleculaire a basse pression |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201214583A TW201214583A (en) | 2012-04-01 |
| TWI527131B true TWI527131B (zh) | 2016-03-21 |
Family
ID=43617963
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100122921A TWI527131B (zh) | 2010-08-11 | 2011-06-29 | 以低壓力進行分子黏附鍵結之方法 |
| TW103113917A TW201428859A (zh) | 2010-08-11 | 2011-06-29 | 以低壓力進行分子黏附鍵結所製之三度空間複合構造 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103113917A TW201428859A (zh) | 2010-08-11 | 2011-06-29 | 以低壓力進行分子黏附鍵結所製之三度空間複合構造 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2418678B1 (https=) |
| JP (1) | JP5419929B2 (https=) |
| KR (1) | KR101238679B1 (https=) |
| CN (1) | CN102376623B (https=) |
| FR (2) | FR2963848B1 (https=) |
| SG (1) | SG178659A1 (https=) |
| TW (2) | TWI527131B (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2978297A1 (fr) * | 2011-07-23 | 2013-01-25 | Soitec Silicon On Insulator | Reduction d'interferences mecaniques dans un systeme de collage de substrats a basse pression |
| FR2992772B1 (fr) * | 2012-06-28 | 2014-07-04 | Soitec Silicon On Insulator | Procede de realisation de structure composite avec collage de type metal/metal |
| FR2997224B1 (fr) * | 2012-10-18 | 2015-12-04 | Soitec Silicon On Insulator | Procede de collage par adhesion moleculaire |
| WO2016101992A1 (de) | 2014-12-23 | 2016-06-30 | Ev Group E. Thallner Gmbh | Verfahren und vorrichtung zur vorfixierung von substraten |
| EP3417477B1 (de) * | 2016-02-16 | 2020-01-29 | EV Group E. Thallner GmbH | Verfahren zum bonden von substraten |
| FR3079532B1 (fr) * | 2018-03-28 | 2022-03-25 | Soitec Silicon On Insulator | Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain |
| CN110767589B (zh) * | 2019-10-31 | 2021-11-19 | 长春长光圆辰微电子技术有限公司 | 一种soi硅片对准键合的方法 |
| CN112635362B (zh) * | 2020-12-17 | 2023-12-22 | 武汉新芯集成电路制造有限公司 | 晶圆键合方法及晶圆键合系统 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3720515B2 (ja) * | 1997-03-13 | 2005-11-30 | キヤノン株式会社 | 基板処理装置及びその方法並びに基板の製造方法 |
| EP0886306A1 (en) * | 1997-06-16 | 1998-12-23 | IMEC vzw | Low temperature adhesion bonding method for composite substrates |
| EP1052687B1 (en) * | 1998-02-02 | 2016-06-29 | Nippon Steel & Sumitomo Metal Corporation | Method for manufacturing an soi substrate. |
| US6008113A (en) * | 1998-05-19 | 1999-12-28 | Kavlico Corporation | Process for wafer bonding in a vacuum |
| JP2000199883A (ja) * | 1998-10-29 | 2000-07-18 | Fujitsu Ltd | 反射型プロジェクタ装置 |
| US6958255B2 (en) * | 2002-08-08 | 2005-10-25 | The Board Of Trustees Of The Leland Stanford Junior University | Micromachined ultrasonic transducers and method of fabrication |
| EP1815500A2 (en) * | 2004-10-09 | 2007-08-08 | Applied Microengineering Limited | Equipment for wafer bonding |
| JP2009094164A (ja) * | 2007-10-04 | 2009-04-30 | Toshiba Corp | インバータ装置における電力用半導体素子 |
| JP5354900B2 (ja) * | 2007-12-28 | 2013-11-27 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法 |
| FR2931014B1 (fr) * | 2008-05-06 | 2010-09-03 | Soitec Silicon On Insulator | Procede d'assemblage de plaques par adhesion moleculaire |
| JP2010021326A (ja) * | 2008-07-10 | 2010-01-28 | Sumco Corp | 貼り合わせウェーハの製造方法 |
| FR2935537B1 (fr) * | 2008-08-28 | 2010-10-22 | Soitec Silicon On Insulator | Procede d'initiation d'adhesion moleculaire |
| EP2200077B1 (en) * | 2008-12-22 | 2012-12-05 | Soitec | Method for bonding two substrates |
| JP5668275B2 (ja) * | 2009-04-08 | 2015-02-12 | 株式会社Sumco | Soiウェーハの製造方法及び貼り合わせ装置 |
-
2010
- 2010-08-11 FR FR1056566A patent/FR2963848B1/fr not_active Expired - Fee Related
-
2011
- 2011-06-29 TW TW100122921A patent/TWI527131B/zh active
- 2011-06-29 TW TW103113917A patent/TW201428859A/zh unknown
- 2011-06-30 JP JP2011146293A patent/JP5419929B2/ja active Active
- 2011-07-01 SG SG2011048584A patent/SG178659A1/en unknown
- 2011-07-12 EP EP11173513.0A patent/EP2418678B1/en active Active
- 2011-08-02 KR KR1020110076876A patent/KR101238679B1/ko active Active
- 2011-08-09 CN CN201110229518.9A patent/CN102376623B/zh active Active
-
2012
- 2012-01-24 FR FR1250663A patent/FR2969378A1/fr active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2963848B1 (fr) | 2012-08-31 |
| CN102376623A (zh) | 2012-03-14 |
| TW201214583A (en) | 2012-04-01 |
| KR20120015266A (ko) | 2012-02-21 |
| TW201428859A (zh) | 2014-07-16 |
| FR2963848A1 (fr) | 2012-02-17 |
| EP2418678A2 (en) | 2012-02-15 |
| JP5419929B2 (ja) | 2014-02-19 |
| SG178659A1 (en) | 2012-03-29 |
| KR101238679B1 (ko) | 2013-03-04 |
| FR2969378A1 (fr) | 2012-06-22 |
| CN102376623B (zh) | 2014-07-02 |
| EP2418678A3 (en) | 2012-02-29 |
| EP2418678B1 (en) | 2014-10-15 |
| JP2012039095A (ja) | 2012-02-23 |
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