TWI527131B - 以低壓力進行分子黏附鍵結之方法 - Google Patents

以低壓力進行分子黏附鍵結之方法 Download PDF

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Publication number
TWI527131B
TWI527131B TW100122921A TW100122921A TWI527131B TW I527131 B TWI527131 B TW I527131B TW 100122921 A TW100122921 A TW 100122921A TW 100122921 A TW100122921 A TW 100122921A TW I527131 B TWI527131 B TW I527131B
Authority
TW
Taiwan
Prior art keywords
wafers
wafer
pressure
bonding
micro
Prior art date
Application number
TW100122921A
Other languages
English (en)
Chinese (zh)
Other versions
TW201214583A (en
Inventor
馬賽爾 伯克卡特
Original Assignee
S O I 科技矽公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by S O I 科技矽公司 filed Critical S O I 科技矽公司
Publication of TW201214583A publication Critical patent/TW201214583A/zh
Application granted granted Critical
Publication of TWI527131B publication Critical patent/TWI527131B/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • H10P90/1906Preparing SOI wafers
    • H10P90/1914Preparing SOI wafers using bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • H10P10/12Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0428Apparatus for mechanical treatment or grinding or cutting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • H10P90/1906Preparing SOI wafers
    • H10P90/1922Preparing SOI wafers using silicon etch back techniques, e.g. BESOI or ELTRAN
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/181Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Pressure Welding/Diffusion-Bonding (AREA)
  • Micromachines (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Pressure Sensors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW100122921A 2010-08-11 2011-06-29 以低壓力進行分子黏附鍵結之方法 TWI527131B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1056566A FR2963848B1 (fr) 2010-08-11 2010-08-11 Procede de collage par adhesion moleculaire a basse pression

Publications (2)

Publication Number Publication Date
TW201214583A TW201214583A (en) 2012-04-01
TWI527131B true TWI527131B (zh) 2016-03-21

Family

ID=43617963

Family Applications (2)

Application Number Title Priority Date Filing Date
TW100122921A TWI527131B (zh) 2010-08-11 2011-06-29 以低壓力進行分子黏附鍵結之方法
TW103113917A TW201428859A (zh) 2010-08-11 2011-06-29 以低壓力進行分子黏附鍵結所製之三度空間複合構造

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103113917A TW201428859A (zh) 2010-08-11 2011-06-29 以低壓力進行分子黏附鍵結所製之三度空間複合構造

Country Status (7)

Country Link
EP (1) EP2418678B1 (https=)
JP (1) JP5419929B2 (https=)
KR (1) KR101238679B1 (https=)
CN (1) CN102376623B (https=)
FR (2) FR2963848B1 (https=)
SG (1) SG178659A1 (https=)
TW (2) TWI527131B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2978297A1 (fr) * 2011-07-23 2013-01-25 Soitec Silicon On Insulator Reduction d'interferences mecaniques dans un systeme de collage de substrats a basse pression
FR2992772B1 (fr) * 2012-06-28 2014-07-04 Soitec Silicon On Insulator Procede de realisation de structure composite avec collage de type metal/metal
FR2997224B1 (fr) * 2012-10-18 2015-12-04 Soitec Silicon On Insulator Procede de collage par adhesion moleculaire
WO2016101992A1 (de) 2014-12-23 2016-06-30 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zur vorfixierung von substraten
EP3417477B1 (de) * 2016-02-16 2020-01-29 EV Group E. Thallner GmbH Verfahren zum bonden von substraten
FR3079532B1 (fr) * 2018-03-28 2022-03-25 Soitec Silicon On Insulator Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain
CN110767589B (zh) * 2019-10-31 2021-11-19 长春长光圆辰微电子技术有限公司 一种soi硅片对准键合的方法
CN112635362B (zh) * 2020-12-17 2023-12-22 武汉新芯集成电路制造有限公司 晶圆键合方法及晶圆键合系统

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3720515B2 (ja) * 1997-03-13 2005-11-30 キヤノン株式会社 基板処理装置及びその方法並びに基板の製造方法
EP0886306A1 (en) * 1997-06-16 1998-12-23 IMEC vzw Low temperature adhesion bonding method for composite substrates
EP1052687B1 (en) * 1998-02-02 2016-06-29 Nippon Steel & Sumitomo Metal Corporation Method for manufacturing an soi substrate.
US6008113A (en) * 1998-05-19 1999-12-28 Kavlico Corporation Process for wafer bonding in a vacuum
JP2000199883A (ja) * 1998-10-29 2000-07-18 Fujitsu Ltd 反射型プロジェクタ装置
US6958255B2 (en) * 2002-08-08 2005-10-25 The Board Of Trustees Of The Leland Stanford Junior University Micromachined ultrasonic transducers and method of fabrication
EP1815500A2 (en) * 2004-10-09 2007-08-08 Applied Microengineering Limited Equipment for wafer bonding
JP2009094164A (ja) * 2007-10-04 2009-04-30 Toshiba Corp インバータ装置における電力用半導体素子
JP5354900B2 (ja) * 2007-12-28 2013-11-27 株式会社半導体エネルギー研究所 半導体基板の作製方法
FR2931014B1 (fr) * 2008-05-06 2010-09-03 Soitec Silicon On Insulator Procede d'assemblage de plaques par adhesion moleculaire
JP2010021326A (ja) * 2008-07-10 2010-01-28 Sumco Corp 貼り合わせウェーハの製造方法
FR2935537B1 (fr) * 2008-08-28 2010-10-22 Soitec Silicon On Insulator Procede d'initiation d'adhesion moleculaire
EP2200077B1 (en) * 2008-12-22 2012-12-05 Soitec Method for bonding two substrates
JP5668275B2 (ja) * 2009-04-08 2015-02-12 株式会社Sumco Soiウェーハの製造方法及び貼り合わせ装置

Also Published As

Publication number Publication date
FR2963848B1 (fr) 2012-08-31
CN102376623A (zh) 2012-03-14
TW201214583A (en) 2012-04-01
KR20120015266A (ko) 2012-02-21
TW201428859A (zh) 2014-07-16
FR2963848A1 (fr) 2012-02-17
EP2418678A2 (en) 2012-02-15
JP5419929B2 (ja) 2014-02-19
SG178659A1 (en) 2012-03-29
KR101238679B1 (ko) 2013-03-04
FR2969378A1 (fr) 2012-06-22
CN102376623B (zh) 2014-07-02
EP2418678A3 (en) 2012-02-29
EP2418678B1 (en) 2014-10-15
JP2012039095A (ja) 2012-02-23

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