TWI523291B - 光電轉換元件、攝像元件及其製造方法 - Google Patents
光電轉換元件、攝像元件及其製造方法 Download PDFInfo
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- TWI523291B TWI523291B TW100106496A TW100106496A TWI523291B TW I523291 B TWI523291 B TW I523291B TW 100106496 A TW100106496 A TW 100106496A TW 100106496 A TW100106496 A TW 100106496A TW I523291 B TWI523291 B TW I523291B
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- Prior art keywords
- photoelectric conversion
- layer
- conversion element
- electrode
- ring
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/611—Charge transfer complexes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/653—Aromatic compounds comprising a hetero atom comprising only oxygen as heteroatom
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010041126 | 2010-02-25 | ||
| JP2010246871A JP5114541B2 (ja) | 2010-02-25 | 2010-11-02 | 光センサの製造方法 |
Publications (2)
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| JP (1) | JP5114541B2 (ja) |
| KR (1) | KR101577858B1 (ja) |
| TW (1) | TWI523291B (ja) |
| WO (1) | WO2011105624A1 (ja) |
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| JP2011199263A (ja) * | 2010-02-25 | 2011-10-06 | Fujifilm Corp | 光電変換素子、撮像素子、撮像素子の製造方法、撮像装置 |
| JP2013214730A (ja) * | 2012-03-05 | 2013-10-17 | Fujifilm Corp | 光電変換素子およびその使用方法、撮像素子、光センサ、化合物 |
| WO2014112279A1 (ja) * | 2013-01-16 | 2014-07-24 | ソニー株式会社 | 固体撮像素子および電子機器 |
| KR102149937B1 (ko) * | 2013-02-22 | 2020-09-01 | 삼성전자주식회사 | 광전 소자 및 이미지 센서 |
| JP2015038979A (ja) * | 2013-07-18 | 2015-02-26 | 富士フイルム株式会社 | イメージセンサー及びその製造方法 |
| KR102167041B1 (ko) * | 2013-08-14 | 2020-10-19 | 삼성디스플레이 주식회사 | 헤테로고리 화합물 및 이를 포함한 유기 발광 소자 |
| JP2015103735A (ja) * | 2013-11-27 | 2015-06-04 | ソニー株式会社 | 固体撮像素子および電子機器 |
| CN110265550B (zh) * | 2014-07-17 | 2023-10-24 | 索尼公司 | 光电转换元件及其制造方法、成像装置、光学传感器 |
| KR102282495B1 (ko) | 2014-07-21 | 2021-07-27 | 삼성전자주식회사 | 화합물, 유기 광전자 소자 및 이미지 센서 |
| EP3041060B1 (en) | 2014-12-19 | 2021-06-16 | Samsung Electronics Co., Ltd. | Image sensor, and electronic device including the same |
| WO2016190217A1 (ja) | 2015-05-28 | 2016-12-01 | ソニーセミコンダクタソリューションズ株式会社 | 光電変換素子および固体撮像装置ならびに電子機器 |
| KR102356696B1 (ko) | 2015-07-03 | 2022-01-26 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
| KR102491494B1 (ko) | 2015-09-25 | 2023-01-20 | 삼성전자주식회사 | 유기 광전 소자용 화합물 및 이를 포함하는 유기 광전 소자 및 이미지 센서 |
| CN107851652A (zh) * | 2015-11-12 | 2018-03-27 | 松下知识产权经营株式会社 | 光传感器 |
| KR102455528B1 (ko) | 2015-11-24 | 2022-10-14 | 삼성전자주식회사 | 유기 광전 소자용 화합물 및 이를 포함하는 유기 광전 소자, 이미지 센서 및 전자 장치 |
| KR102529631B1 (ko) | 2015-11-30 | 2023-05-04 | 삼성전자주식회사 | 유기 광전 소자 및 이미지 센서 |
| KR102557864B1 (ko) | 2016-04-06 | 2023-07-19 | 삼성전자주식회사 | 화합물, 및 이를 포함하는 유기 광전 소자, 이미지 센서 및 전자 장치 |
| KR102601055B1 (ko) | 2016-05-10 | 2023-11-09 | 삼성전자주식회사 | 화합물, 및 이를 포함하는 유기 광전 소자, 이미지 센서 및 전자 장치 |
| US10236461B2 (en) | 2016-05-20 | 2019-03-19 | Samsung Electronics Co., Ltd. | Organic photoelectronic device and image sensor |
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| JP2008072090A (ja) | 2006-08-14 | 2008-03-27 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
| US8268402B2 (en) | 2006-12-27 | 2012-09-18 | Frontier Carbon Corporation | Fullerene film and fullerene polymer both produced from fullerene derivative and processes for producing these |
| JP2009049278A (ja) | 2007-08-22 | 2009-03-05 | Fujifilm Corp | 光電変換素子、光電変換素子の製造方法、固体撮像素子 |
| JP5108806B2 (ja) * | 2008-03-07 | 2012-12-26 | 富士フイルム株式会社 | 光電変換素子及び撮像素子 |
| JP5644041B2 (ja) | 2008-10-15 | 2014-12-24 | コニカミノルタ株式会社 | 有機光電変換素子の製造方法 |
-
2010
- 2010-11-02 JP JP2010246871A patent/JP5114541B2/ja active Active
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2011
- 2011-02-24 US US13/581,083 patent/US8686408B2/en active Active
- 2011-02-24 KR KR1020127022109A patent/KR101577858B1/ko active IP Right Grant
- 2011-02-24 WO PCT/JP2011/054838 patent/WO2011105624A1/en active Application Filing
- 2011-02-25 TW TW100106496A patent/TWI523291B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101577858B1 (ko) | 2015-12-28 |
| US8686408B2 (en) | 2014-04-01 |
| KR20130009953A (ko) | 2013-01-24 |
| JP5114541B2 (ja) | 2013-01-09 |
| TW201143182A (en) | 2011-12-01 |
| US20120313088A1 (en) | 2012-12-13 |
| WO2011105624A1 (en) | 2011-09-01 |
| JP2011199253A (ja) | 2011-10-06 |
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