TWI522332B - Ito濺鍍靶材及其製造方法 - Google Patents

Ito濺鍍靶材及其製造方法 Download PDF

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Publication number
TWI522332B
TWI522332B TW104105247A TW104105247A TWI522332B TW I522332 B TWI522332 B TW I522332B TW 104105247 A TW104105247 A TW 104105247A TW 104105247 A TW104105247 A TW 104105247A TW I522332 B TWI522332 B TW I522332B
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Taiwan
Prior art keywords
ito
sintered body
target
powder
temperature
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TW104105247A
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English (en)
Chinese (zh)
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TW201534572A (zh
Inventor
寺村享祐
武内朋哉
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三井金屬鑛業股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605Treating the starting powders individually or as mixtures
    • C04B35/62695Granulation or pelletising
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54Particle size related information
    • C04B2235/5409Particle size related information expressed by specific surface values
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/60Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
    • C04B2235/604Pressing at temperatures other than sintering temperatures
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6562Heating rate
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6565Cooling rate
    • CCHEMISTRY; METALLURGY
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658Atmosphere during thermal treatment
    • C04B2235/6583Oxygen containing atmosphere, e.g. with changing oxygen pressures
    • C04B2235/6585Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage above that of air
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/77Density
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/78Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786Micrometer sized grains, i.e. from 1 to 100 micron
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80Phases present in the sintered or melt-cast ceramic products other than the main phase
    • C04B2235/85Intergranular or grain boundary phases

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
TW104105247A 2014-02-18 2015-02-16 Ito濺鍍靶材及其製造方法 TWI522332B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014028543 2014-02-18

Publications (2)

Publication Number Publication Date
TW201534572A TW201534572A (zh) 2015-09-16
TWI522332B true TWI522332B (zh) 2016-02-21

Family

ID=53878100

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104105247A TWI522332B (zh) 2014-02-18 2015-02-16 Ito濺鍍靶材及其製造方法

Country Status (5)

Country Link
JP (1) JP5816394B1 (fr)
KR (1) KR101583693B1 (fr)
CN (2) CN105308002A (fr)
TW (1) TWI522332B (fr)
WO (1) WO2015125588A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016072441A1 (fr) * 2014-11-07 2016-05-12 Jx金属株式会社 Cible de pulvérisation d'ito et procédé pour la fabriquer, film électroconducteur transparent d'ito, et procédé de fabrication de film électroconducteur transparent d'ito
KR20170142169A (ko) * 2015-04-30 2017-12-27 미쓰이금속광업주식회사 Ito 스퍼터링 타깃재
CN110257782B (zh) * 2016-03-28 2021-12-21 Jx金属株式会社 圆筒型溅射靶及其制造方法
JP6756283B2 (ja) * 2016-04-12 2020-09-16 三菱マテリアル株式会社 円筒型スパッタリングターゲット
JP2018178251A (ja) * 2017-04-07 2018-11-15 三菱マテリアル株式会社 円筒型スパッタリングターゲット及びその製造方法
CN113149614A (zh) * 2021-05-28 2021-07-23 通威太阳能(合肥)有限公司 一种烧结体、靶材及其制备方法
WO2024203953A1 (fr) * 2023-03-30 2024-10-03 出光興産株式会社 Cible de pulvérisation, procédé de production de cible de pulvérisation, couche mince d'oxyde, transistor à couches minces et dispositif électronique

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3503759B2 (ja) * 1993-12-14 2004-03-08 日立金属株式会社 インジウム・スズ酸化物膜用スパッタリング用ターゲットおよびその製造方法
JP4961672B2 (ja) 2004-03-05 2012-06-27 東ソー株式会社 円筒形スパッタリングターゲット並びにセラミックス焼結体及びその製造方法
JP2007231381A (ja) * 2006-03-01 2007-09-13 Tosoh Corp Itoスパッタリングターゲットおよびその製造方法
JP2009040621A (ja) * 2007-08-06 2009-02-26 Mitsui Mining & Smelting Co Ltd Ito焼結体およびitoスパッタリングターゲット
JP5309975B2 (ja) * 2008-12-25 2013-10-09 東ソー株式会社 透明導電膜用焼結体及びスパッタリングターゲット並びにその製造方法
JP2011080116A (ja) * 2009-10-07 2011-04-21 Mitsui Mining & Smelting Co Ltd Itoスパッタリングターゲットおよびその製造方法
JP2012126937A (ja) 2010-12-13 2012-07-05 Sumitomo Metal Mining Co Ltd Itoスパッタリングターゲットとその製造方法
CN102718499B (zh) * 2012-07-10 2014-02-26 国家钽铌特种金属材料工程技术研究中心 一种含In4Sn3O12相ITO溅射靶的制造方法

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Publication number Publication date
JP5816394B1 (ja) 2015-11-18
JPWO2015125588A1 (ja) 2017-03-30
CN107253855A (zh) 2017-10-17
TW201534572A (zh) 2015-09-16
KR20150139623A (ko) 2015-12-11
WO2015125588A1 (fr) 2015-08-27
KR101583693B1 (ko) 2016-01-08
CN105308002A (zh) 2016-02-03

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