TWI517351B - 中介層封裝體裝置及中介層組件的建構方法 - Google Patents

中介層封裝體裝置及中介層組件的建構方法 Download PDF

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Publication number
TWI517351B
TWI517351B TW102120058A TW102120058A TWI517351B TW I517351 B TWI517351 B TW I517351B TW 102120058 A TW102120058 A TW 102120058A TW 102120058 A TW102120058 A TW 102120058A TW I517351 B TWI517351 B TW I517351B
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Taiwan
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interposer
conductive
layer
bump
mounting
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TW102120058A
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TW201401483A (zh
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余振華
李明機
蔡豪益
洪瑞斌
李建勳
吳凱強
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台灣積體電路製造股份有限公司
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Description

中介層封裝體裝置及中介層組件的建構方法
本發明係有關於半導體組件及其形成方法，且特別是有關於一種具有中介層的封裝體及其形成方法。
一般而言，現代電子裝置的設計方向之一為提升給定空間中的可計算功率及儲存量。眾所皆知的摩爾定律(Moore's law)指出，在給定裝置上定晶體的數量約每隔18個月就會增加一倍。為了將更多的處理功率壓縮至更小的封裝體中，電晶體的尺寸已縮減至受限於製程及材料的物理性質而無法再減小的程度。為了克服電晶體尺寸的限制，設計者試圖將更大的子系統(subsystem)封裝至單一晶片(系統單晶片；system on chip)，或藉由減小晶片間的距離及後續內連線距離。
在一系統中減小晶片間距離的方法之一為具有垂直內連線的晶片堆疊。其可包括多個基板層，且晶片在基板的上表面及下表面上。覆晶(flip-chip)封裝為一種將晶片設置於基板上側及下側的方法之一，其中基板具有導電通孔設置通過基板，以提供上、下表面的電性連接。這些用於覆晶的中介層(interposer)基板一般係在通過中介層的通孔中設置矽、玻璃、或一些其他含銅、金、或其他導體的絕緣物。然而，雖然由通 孔連接所提供的中介層可提升裝置效能，但也會帶來許多製造上的挑戰。
在本發明一實施例中，提供一種中介層(interposer)組件的建構方法，包括：在一導電安裝板(conductive mounting plate)上安裝至少一導電中介層凸塊(conductive interposer stud)；在該至少一導電中介層凸塊周圍模造一載體平板(carrier plane)，使得該安裝板的至少一第一表面在該載體平板外，且該安裝板的至少一第二表面與該載體平板的一第一表面接觸；在該載體平板的該第一表面上形成一第一改向層(redirect layer)，該第一改向層與該至少一導電中介層凸塊電性接觸；將至少一第一積體電路晶粒的至少一部分接合至該第一改向層的至少一部分，使得該第一積體電路晶粒與該至少一中介層凸塊通信聯絡(signal communication)；在該載體平板的該第二表面上形成一第二改向層；將一第二積體電路晶粒的至少一部分接合至該第二改向層的至少一部分，使得該第二積體電路晶粒與該至少一中介層凸塊通信聯絡；以及將至少一第一層間連接結構(first interlevel connection structure)接合至該第一改向層的至少一部分，使得該至少一第一層間連接結構與該至少一中介層凸塊通信聯絡，以及其中，該第一層間連接結構係用以支撐該中介層組件，該中介層組件安裝於與一目標載體板材(target carrier board)具有一第一分開距離的位置。
在本發明另一實施例中，提供一種中介層組件的建構方法，包括：在一導電安裝板上安裝一或多個導電中介層 凸塊；在一背載板(backup plate)上安裝該導電安裝板；在該至少一導電中介層凸塊周圍模造一載體平板(carrier plane)，使得該導電安裝板介於該載體平板及該背載板之間，該安裝板與該載體平板的一第一表面接觸；在該載體平板的該第一表面上形成一第一改向層，該第一導向層與至少一導電中介層凸塊電性接觸；將至少一第一積體電路晶粒的至少一部分接合至該載體平板的該第一表面及該第一改向層的至少一部分，使得該第一積體電路晶粒與該至少一中介層凸塊通信聯絡(signal communication)；將一第二積體電路晶粒的至少一部分接合至該載體平板的該第二表面，使得該第二積體電路晶粒與該至少一中介層凸塊及該第一積體電路晶粒通信聯絡；將至少一第一層間連接結構接合至該第一改向層的至少一部分，使得至少一第一層間連接結構與該至少一中介層凸塊通信聯絡；將至少一第二層間連接結構接合至該載體平板的該第二表面，使得該至少一第二層間連接結構與該至少一中介層凸塊及該至少一第一積體電路晶粒經由該至少一中介層凸塊通信聯絡；以及將一頂部封裝體(top package)接合至至少一第二層間連接結構，其中該頂部封裝體包括至少一積體電路及至少一安裝板，以及其中該頂部封裝體的該積體電路與該至少一第二層間連接結構及該至少一第一積體電路晶粒通信聯絡。
在本發明又一實施例中，提供一種中介層封裝體裝置(interposer package apparatus)，包括：複數個第一中介層凸塊；至少一環氧樹脂載體平板，模造於至少一該複數個第一中介層凸塊周圍；一第一改向層結構，具有至少一裝置安裝墊 (device mounting pad)及至少一板材安裝墊(board mounting pad)，且設置在該載體平板的一第一表面上，其中至少一該複數個第一中介層凸塊電性連接至該第一改向層；一第二改向層結構，具有至少一裝置安裝墊及至少一板材安裝墊，以及設置在該載體平板的該第二表面上，其中該第二改向層電性連接至至少一中介層凸塊；至少一第一積體電路晶粒，接合至該第一改向層；至少一第二積體電路晶粒，接合至該第二改向層；以及至少一第二中介層凸塊，接合至該第二改向層的一板材安裝墊，以及電性連接至該第一改向層的至少一部分，以及其中，該至少一第二中介層凸塊係用以安裝一頂部封裝體，並在自該第二積體電路晶粒的一第一方向支撐該頂部封裝體。
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
100、1000、1110、1300、1700、1800‧‧‧中介層組件
110‧‧‧中介層凸塊
104‧‧‧板材安裝凸塊
102‧‧‧裝置安裝凸塊
108‧‧‧安裝板
106‧‧‧背襯板
200‧‧‧中介層
202、904‧‧‧載體平板
300‧‧‧裝置
204‧‧‧中介層
600‧‧‧應用
402、1106‧‧‧改向層結構
406、706‧‧‧改向層裝置安裝墊
404、1104‧‧‧改向層板材安裝墊
500‧‧‧晶粒安裝
502‧‧‧接合墊
602‧‧‧層間連接結構
700、800‧‧‧中介層-晶粒組件
702‧‧‧底部安裝晶粒
704‧‧‧焊料球格柵陣列
802‧‧‧底膠填充
900‧‧‧安裝的中介層-晶粒組件
902‧‧‧附著層
1202‧‧‧層間安裝凸塊
1400‧‧‧設施
1500‧‧‧自動化儀器
1502‧‧‧劃切部分
1616‧‧‧目標載體電路板
1600‧‧‧電路
1618、1610‧‧‧連接點
1620‧‧‧頂部封裝體
1608‧‧‧印刷電路板
1614‧‧‧焊料球安裝
1602‧‧‧記憶體晶片
1604‧‧‧導線接合
1900‧‧‧中介層配置
1402‧‧‧應用的封裝體
1702‧‧‧焊料連接
1802‧‧‧插槽安裝晶粒
1606、1612‧‧‧安裝墊
第1~4圖顯示在一實施例中形成具有中介層凸塊的中介層組件。
第5~8圖顯示在一實施例中用於底部安裝晶粒(bottom mounted die)的中介層組件的製備及應用。
第9~11圖顯示在一實施例中用於頂部安裝晶粒(top mounted die)的中介層組件的製備及應用。
第12~15圖顯示在一實施例中雙層中介層的封裝。
第16圖顯示在一實施例中雙層中介層設置於三層積體電 路封裝體中並安裝在電路板上。
第17圖顯示中中介層組件安裝在電路板上，其具有另一實施例中的層間連接結構。
第18圖顯示在另一實施例中的中介層組件。
第19圖顯示在另一實施例中的中介層配置。
以下依本發明之不同特徵舉出數個不同的實施例。本發明中特定的元件及安排係為了簡化，但本發明並不以這些實施例為限。舉例而言，於第二元件上形成第一元件的描述可包括第一元件與第二元件直接接觸的實施例，亦包括具有額外的元件形成在第一元件與第二元件之間、使得第一元件與第二元件並未直接接觸的實施例。此外，為簡明起見，本發明在不同例子中以重複的元件符號及/或字母表示，但不代表所述各實施例及/或結構間具有特定的關係。
在許多實施例中將描述特定的內容，亦即積體電路晶粒的晶圓級封裝。然而，在一些其他實施例中，也可使用其他電性連接元件，例如未封裝的裸晶片(bare chip)、顯示器、輸入元件(input component)、或其他欲得的電子元件，且並非以此為限。
本發明提供一種中介層，其具有預先形成的中介層凸塊(interposer stud)及介電材料設置於預先放置的中介層凸塊的週圍。改向層接觸頭(redirection layer contact)可選擇性的設置於中介層凸塊的兩側，且具有一或多個晶片安裝於中介層凸塊的兩側，使得中介層凸塊可與任一改向層結合。
第1圖顯示初始的中介層組件(initial interposer assembly)100。中介層組件100係由一或多個中介層凸塊110發展而成。在一實施例中，中介層凸塊110較佳可為銅。或者，可利用金、鋁、或其他適合的導體形成中介層凸塊110。中介層凸塊的形成方法也可包括壓印層狀材料(stamped from sheet material)、擠壓(extruded)、切割線材(cut from wire)、模造(molded)、或利用單一或組合已知或其他未來發展的技術。
在一實施例中，中介層凸塊110可有多種形式，包括板材安裝凸塊(board mounting stud)104及裝置安裝凸塊(device mounting stud)102。板材安裝凸塊104可用於將板材的一側連接至相對的一側。相似的，裝置安裝凸塊102可用以連接在中介層頂側及底側上安裝的晶片的接腳(pin)。或者，中介層凸塊可用以連接任何裝置、元件、或在中介層另一側上的任一其他元件。
可在安裝板(mounting plate)108上安裝中介層凸塊110，安裝板108之後可安裝至背載板106。在一較佳實施例中，安裝板108可為導電層，其中利用焊料接合(soldered)、焊接(welded)或以其他電性接合的方式將中介層凸塊110接至安裝板108。在另一實施例中，中介層凸塊110可整體形成於安裝板108中。上述結構的進行可利用單一塊材料，而藉由材料移除製程(material removal process)形成中介層凸塊，例如機械研磨、電漿蝕刻、化學蝕刻、離子研磨、或其他製程。或者，可先研磨形成中介層凸塊110，而後再將其設置並接合上安裝板108。在一較佳實施例中，中介層凸塊110可為接合至安裝 板108的導線凸塊(wire stud)，其係利用導線接合機器進行線接合技術，如楔連結焊接(wedge bonding welding)或球接合焊接(ball bonding welding)。上述實施例可利用現行用於處理已知尺寸的導線的裝置來進行，且可將線路的一端接合至安裝板108。在另一較佳實施例中，中介層凸塊110可為由欲得材料擠壓形成的釘狀物(nail)，而後以焊料膏(solder paste)將其物理性接合至安裝板108。
或者，中介層凸塊110可直接安裝至背載板106，因此中介層凸塊110的底部直接與背載板106相配，且在後續階段中移除背載板106之後，中介層凸塊110的底部會被暴露出來。背載板106可為玻璃或金屬，或為其他材料，這些材料必須為在中介層的形成過程中足以維持安裝板108及中介層凸塊110穩定不動的材料。
第2圖顯示初始模造的中介層(initial molded interposer)200，其具有中介層凸塊110設置於載體平板(carrier plane)202中。可在模造槽(molding chase)中放入貼合有安裝板108的背載板106(非必須)及中介層凸塊110。以模造材料填入模造槽以形成載體平板202。在一較佳實施例中，模造材料的電性絕緣性質足以避免電流在中介層凸塊間移動。用以形成載體平板的材料較佳為絕緣材料如玻璃、環氧樹脂、二氧化矽、聚合物、陶瓷、或其他絕緣材料。在加熱時會液化的模造材料的熔點較佳低於中介層凸塊110及安裝板108的材料的熔點，因此當模造材料202填入模造槽時，中介層凸塊110及安裝板108可維持不會熔化。在一實施例中，載體平板202的厚度可 介於200至300微米。然而，也可根據所需中介層204的電性及物理性質改變其厚度。
模造材料較佳也可具有流動性，使得模造材料可在中介層凸塊110周圍流動，以避免在載體平板202中形成氣泡或孔洞。藉由加熱可熔的模造材料，使得模造材料的流動性達到可順暢的填入模造槽的黏度。或者，可利用催化的(catalyzed)或以溶劑為主(solvent base)的模造材料，所選擇的材料、或改質後的材料具有可完全填入模造槽的黏度、表面張力、或其他性質。
在一較佳實施例中，載體平板202的形成可利用一般用以底膠填充(underfilling)晶粒而接合上印刷半導體(PCB)的熱固性環氧樹脂(thermal set epoxy)。利用相同的材料進行底膠填充及形成載體平板，可使其熱膨脹係數(coefficient of thermal expansion；CTE)緊密相配，熱膨脹係數係量測其在給定溫度下特定材料的膨脹情形。此外，具有底膠填充的安裝晶粒以及中介層之間的分隔約為40至100微米。環氧樹脂材料係設計來完全填入晶粒下的空間、圍繞針狀物、或與其下晶粒連接，其也可用來完全填入模造槽及中介層凸塊110周圍的任何空間，而不會留下氣泡或空隙。
在一較佳實施例中，可對模造槽塑形以形成中介層封裝體的最終形狀。因此，可利用方型、矩形、八角形、六角形、或圓形。然而，本領域技藝人士應了解模造槽可為任何形狀，而未脫離本發明之精神和範圍。
或者，模造槽的形狀並非中介層封裝體最終的形 狀。在這樣的實施例中，載體平板202的模造材料可在後續製程中塑形。因此，中介層凸塊110的多個封裝體可接合至單一安裝板108，且放置於單一模造槽中。在將模造材料加入模造槽中且固化載體平板202之後，可將載體平板切割或研磨成所需形狀，例如為在製程中較易處理的形狀，或為在最終或中間階段所需形狀，但並非以此為限。或者，具有多個中介層凸塊110封裝體的載體平板202可作為單一件進行更進一步的處理，而後再於後續階段分開成個別的中介層封裝體。
在形成載體平板202之後，中介層204至少包括載體平板202及一或多個中介層凸塊110。當模造製程中也包括了安裝板108時，安裝板108也會在中介層204中。
第3圖顯示移除中介層202的背載板106所形成的裝置300。在形成載體平板202及移除背載板106之後，在中介層204中可接合上安裝板108或接合上其他導電材料(若原先尚未形成於其上)。可將導電層沉積(或以其他方法直接貼合)在載體平板202及中介層凸塊110，使得安裝板108與中介層凸塊110電性接觸。可對安裝板108(不論為起初就在中介層204中模造，或在形成載體平板202之後才形成)進行處理，以在中介層凸塊110及任何所需的安裝墊(mounting pad)或其他中介層凸塊110之間形成分開的電性連接。
第4圖顯示具有中介層202的封裝體，其包括底部的改向層(RDL)結構402。改向層結構402可用來重新分佈各中介層凸塊110的接觸表面。或者，可將導電層接合至載體平板202及中介層凸塊110，而後以罩幕及蝕刻以形成改向層 結構402。在一較佳實施例中，安裝板108可在左側，並藉由任何已知或未來發展的方法形成改向層結構402。例如，可在安裝板108上利用光微影以遮罩一系列的內連線，而後可在進行蝕刻以形成改向層結構402。或者，在一實施例中，並未使用安裝板108，中介層凸塊110係直接接合至背載板106，且改向層結構402可在背載板106移除後沉積至載體平板202的底部。在這樣的實施例中，可藉由遮罩改向層結構402的元件，而後沉積導電材料以形成改向層結構402。在此實施例中，改向層結構402的形成可利用任何導電材料，藉由任何製造製程，包括汽化(evaporation)、電解電鍍(electrolyte plating)、無電鍍(electroless plating)、網印(screen printing)、濺鍍、化學氣相沉積、或其他適合的沉積製程，但並非以此為限。
改向層結構402使得中介層204能夠重映射(remap)晶片、晶粒、或接合至中介層204的其他裝置之間的物理內連線。例如，改向層蹤跡(trace)可具有用於晶粒、裝置、電路板、或其他中介層的針狀物或接觸頭，且連接接觸頭(contact)或墊(pad)至中介層凸塊110的蹤跡可在後續製程中連接至在中介層204相對側上的改向層蹤跡。因此，改向層結構402可改向(redirect)其接合上的裝置的接觸頭，使得具有針狀物(一般而言不會直接對齊)的裝置可電性連接。
此外，改向層結構402可包括不同類型或尺寸的改向層墊。在一較佳實施例中，改向層結構可具有改向層裝置安裝墊(mounting pad)406或改向層板材安裝墊404。可減小改向層裝置安裝墊406的尺寸，以接受來自相近的安裝裝置(如 積體電路晶粒)的針狀物或接觸頭。或者，改向層板材安裝墊404可大於改向層裝置安裝墊406，並用以接受焊料球，藉此中介層組件可接合至其他板材。例如，可利用在改向層板材安裝墊404上的焊料球將另一裝置或板材接合至中介層組件。較佳可使用焊料球，其電性連接高於安裝在改向層裝置安裝墊406上的晶粒，使得中介層結構可在載體平板202中介層204的單一側上安裝至在二個不同層或不同接的裝置或板材。
第5圖顯示預備用於晶粒安裝(die mounting)500之具有RDL結構402的中介層204。RDL裝置安裝墊406可具有沉積於其上的接合墊(bonding pad)502，以利於導電接合且能夠進行晶粒的安裝。在一較佳實施例中，接合墊502可為凸塊下金屬層(UBM)結構，其可為鈦、鈦銅鎳、氮化鈦、鈦鎢、鋁、鉻、焊料、或其他適合的凸塊下金屬層材料。或者，接合墊502可為電鍍材料，例如鎳金，但並非以此為限。或者，接合墊502的沉積可利用任何適當的無電鍍沉積，如化鎳鈀金(electroless nickel electroless palladium immersion gold；ENEPIG)、無電鍍鎳等。
第6圖顯示層間連接結構(interlevel connection structure)602在RDL電路板安裝墊404的應用600。在一較佳實施例中，層間連接結構602為焊料球，其尺寸足以將中介層204及相關的中介層凸塊110連接至與中介層204分隔的目標載體裝置或電路板，其距離足以讓晶粒或晶片接合至在中介層及目標載體裝置之間的RDL裝置安裝墊406。
第7圖顯示具有底部安裝晶粒(bottom-mounted die)702的中介層-晶粒組件(interposer-die assembly)。在一較佳實施例中，晶粒702(例如處理晶片、記憶體、或其他裝置，但並非以此為限)可安裝至中介層204的下側。將晶粒702安裝至中介層的方法之一可為利用焊料球格柵陣列(solder ball grid array)704，其具有焊料球設置於晶粒702的一或多個針狀物或接觸頭上，而後，其可用以將晶粒702接合至接合墊502及RDL裝置安裝墊406。雖然在此敘述利用焊料球格柵陣列704以接合晶粒702，也可用任何已知的安裝技術以將晶粒702安裝至RDL 裝置墊706，包括凸塊晶片載體(bump chip carrier)、雙直插封裝(dual in-line package)、地柵陣列(land grid array)、多晶片模組(multi-chip module)、無鉛的四邊扁平封裝(quad flat non-lead package；QFN)、四邊扁平封裝(quad flat package)等，但並非以此為限。
第8圖顯示中介層-晶粒組件800及具有底膠填充(underfilling)802的底部安裝晶粒702。在一較佳實施例中，環氧樹脂底膠填充802可應用於晶粒702及中介層204之間。其有助於將晶粒702固定至中介層204，且避免其由於物理應力下的鬆脫或破裂導致至改向層結構的連接。
利用環氧樹脂底膠填充802結合環氧樹脂載體平板202，可使熱膨脹係數相配，使得底膠填充802及載體平板202或中介層204依據溫度改變以大致相同的速度擴張。此外，晶粒702具有環氧樹脂主體，將使晶粒702的熱膨脹係數與中介層204或底膠填充802相配。本領域技藝人士應了解一般玻璃的熱膨脹係數大約為8.5*ppm/oC，硼矽玻璃大約為 3.3*ppm/oC，而環氧樹脂的熱膨脹係數可介於15至100ppm/oC。絕緣材料如玻璃或陶瓷可用以作為中介層204的載體平板202，較佳使載體平板202、晶粒702及底膠填充802的熱膨脹係數的相配，以降低這些元件內連線上的物理應力。
然而，可結合任何其他的材料，而仍不脫離本發明之精神和範圍內。例如，可完全不使用底膠填充802，晶粒702封裝體可為高分子或塑膠，或者載體平板202可為玻璃、二氧化矽、或其他介電或絕緣材料。
第9圖顯示安裝的中介層-晶粒組件(mounted interposer-die assembly)900。中介層-晶粒組件900可選擇性的與附著層(adhesive)902或填充物(filler)安裝至製程的載體平板904。在一較佳實施例中，載體平板904可用以控制或支持中介層-晶粒組件900，而處理組件900的頂部。此外，附著層902的厚度較佳可足以覆蓋並避免干擾層間連接結構602，並對中介層204及晶粒702提供支撐。雖然製程中的載體平板904較佳用以在後續製程中托住並支撐中介層-晶粒組件900，也可用其他的適當的製程處理中介層-晶粒組件900的頂部。
第10圖顯示支撐著的中介層組件1000的製備。在一較佳實施例中，載體平板202可被研磨、磨亮、或縮減，以暴露出中介層凸塊110。或者，在一些實施例中，載體平板202並未覆蓋中介層凸塊110，則可省略此縮減步驟。
第11圖顯示處理中介層組件1100的頂側上的部分。用來製備中介層組件及將晶粒貼合至頂側的這些處理步驟，可類似於用於底側的處理步驟。上部的改向層結構(upper RDL structure)1106(由一或多個上部的改向層裝置安裝墊1102或者一或多個上部的改向層板材安裝墊(upper RDL board mounting pad)1104所組成)可形成於中介層204的上部表面上。上部的改向層結構1106的形成方法可類似於在中介層204的底側上形成改向層結構402的方法，其可利用貼合導電層、而後遮罩並蝕刻該層，或者可利用遮罩該上部的改向層結構1106邊界，並沉積導電材料，以形成上部的改向層結構1106。此外，接合墊502可接至上部的改向層結構1106，且晶粒702可利用球格柵陣列702接至其上，或其他適合的晶粒702接合方法。也可選擇性的在晶粒702的上部的表面上使用底膠填充802，以確保晶粒702連接至中介層204。
本領域技藝人士應可了解，可在底部的步驟之前或之後進行頂側的製程步驟。或者，中介層組件底側及頂側的製程步驟可混合進行，而仍不脫離本發明之精神和範圍內。例如，可在施加任何接合墊502之前，形成在中介層204頂部及底部的改向層結構402及1106，但並非以此為限。與此類似的，在接上任何晶粒702之前，接合墊502可使用於中介層204的兩側。
為了顯示在另一實施例中利用裝置安裝凸塊形成層接連接結構，在此圖中所顯示的接合墊502僅使用在上部的改向層裝置安裝墊1102。然而，本領域技藝人士應可了解可對中介層組件的頂部使用與上述形成層間連接結構602相同的方法及結構。
第12圖顯示接上有層間安裝凸塊的中介層組件 1200。可藉由任何適當的導電接合方法將層間安裝凸塊(interlevel mounting studs)1202安裝至上部的改向層板安裝墊1104。在一較佳實施例中，將層間安裝凸塊1202接至板材安裝凸塊104，其之後係連至在中介層組件的底部上的層間連接結構602。因此，可在上部的晶粒702上安裝裝置或板材，且可藉由導電路徑(conductive path)聯絡至目標載體板材(target carrier board)或裝置(其上安裝有中介層組件1300)，導電路徑係提供自層間安裝凸塊1202、板材安裝凸塊104及層間連接結構602。或者，上部的改向層板材安裝墊1104或下部的改向層板材安裝墊406可藉由改向層結構402或上部的改向層結構1106而連接至任何上部的或下部的改向層裝置安裝墊1102。本領域技藝人士應可了解在上面部分的及在下面部分改向層結構1106及402可將任何晶粒702連接接腳(connection pin)連接至任何其他晶粒702連接接腳、層間連接結構602、或安裝凸塊1202，使得晶粒702能夠電性連接至在中介層封裝體1200中的任何其他裝置或其他連接線路。
第13圖顯示中介層封裝體1300，其移除了載體平板904及附著層902。可藉由任何方法去除載體平板904的接合並移除附著層902，例如物理性剝除載體平板904及附著層902、研磨載體平板904、以溶劑溶解附著層902等，但並非以此為限。較佳的去接合方法可避免損害中介層封裝體1300及相關結構，然而仍然能夠完全移除附著層902。
第14圖顯示中介層封裝體1300安裝在應用的封裝體(application packaging)1402上而預備設施(installation) 1400。應用的封裝體1402可使用捲帶(tape)、黏著劑、或一些其他適當的載體，使得中介層封裝體1300能夠被操控、處理、或用於自動化儀器並安裝至目標載體板材(target carrier board)。
第15圖顯示用於自動化儀器1500中的多個中介層封裝體1300的分割(singulation)。在製造環境中，期待在單一載體上能夠具有多個中介層封裝體1300，以減少自動化機器的使用量。在這樣的實施例中，可將中介層封裝體1300使用在帶狀的可撓式捲帶或其他應用的封裝體1402，而後以劃切部分(singulation feature)1502在應用的封裝體1402作記號，以確保封裝可在欲得且可重複的位置被分開。
本領域技藝人士應可了解可利用各種較佳的方法將中介層封裝體1300應用於應用的封裝體1402及劃切。在一較佳實施例中，在單一中介層載體平板202上的多個中介層封裝體1300可接至應用的封裝體1402，而後分開為個別的中介層封裝體1300，其係藉由切割(cutting)或蝕刻載體平板202以分開各中介層封裝體1300。此外，在這樣的實施例中，可在分開中介層封裝體1300後形成劃切部分1502，或者，當劃切部分1502被用作形成應用的封裝體1402中的部分切割(partial cut)時，劃切部分1502的形成可與中介層封裝體1300的分開同時進行，切割器具進行通過載體平板202並進入應用的封裝體1402的單一切割。
第16圖顯示雙層中介層封裝體1300，設置於三層積體電路封裝體中，且安裝在目標載體電路板1616上，以形 成四層電路1600。當必須安裝並電性連接多個裝置時，常以印刷電路板(PCB)1616作為電子電路的載體，且可作為目標載體板材(target circuit board)1616。經由中介層封裝體1300的底部上的層間連接結構602，中介層封裝體1300可安裝至在下部的印刷電路板或目標載體板材1616。印刷電路板1616可具有安裝墊，或具有設置於印刷電路板1616的表面上的連接點1618，並用以接受中介層封裝體1300的電性連接。當使用焊料球安裝層間連接結構602時，焊料球可連接並直接黏著至印刷電路板安裝墊1618，其可確保中介層封裝體1300至下部的印刷電路板1616冷卻及固化。此外，下部的印刷電路板安裝墊1618可電性連接至其他電路或元件，使得中介層封裝體及黏著的晶粒702能夠經由下部的印刷電路板1616而與外部的電路聯絡。
頂部封裝體(top package)1620也可被包括在整體的中介層封裝體1300中，以形成三層封裝體。上部的印刷電路板1608也可接至中介層封裝體的頂部，其可利用層間安裝凸塊1202、或焊料球安裝(solder ball mount)1614、或兩者的組合，焊料球安裝(solder ball mount)1614支撐層間安裝凸塊1202而連至上部的印刷電路板1608的安裝墊1612。上部的印刷電路板1608可具有任何裝置、電路、或結構的組合。例如，上部的印刷電路板1608可具有一裝置，如記憶體晶片1602連接至安裝墊1606，並藉由連接點(connection point)1610通過導線接合(wire bond)電性連接至上部的印刷電路板1608，但並非以此為限。在此實施例中，中介層上的晶粒702可為邏輯(logic) 或處理(processing)積體電路、介面(interface)、或接觸面板控制器(touchscreen controller)、聯絡晶片(communication chips)等。本領域技藝人士應可了解上部的印刷電路板1608及下部的印刷電路板1616可具有任何類型的電性蹤跡(electrical trace)安裝於其上，且印刷電路板一般具有通孔(vias)或其他連接通過電路板本身，使得在印刷電路板各側的電路能夠電性接觸。
因此，安裝在中介層204的上側上的晶粒702、安裝在中介層204的底側上的晶粒702、以及在頂部封裝體1620中的積體電路1602，可各自與彼此聯絡，且藉由改向層結構1106及406、中介層凸塊110及層間連接結構602而與任何連接的裝置聯絡。
層間連接結構1202的物理性安排也可根據系統的需要改變，而並未超出本發明之精神及範疇。第17圖顯示，在另一種實施例中具有層間連接結構602的中介層組件1700。中介層封裝體1300可具有安裝在中介層204底部的中介層凸塊1202，並與焊料連接(solder connection)1702一起使用，以將中介層204連接至印刷電路板1616的板材安裝墊1618。
第18圖顯示在另一實施例中的中介層組件1800。在此實施例中，載體平板202中的中介層凸塊110可將多個晶粒或插槽安裝晶粒(socket mounted die)1802連接至層間連接結構602，使得晶粒702能夠設置在中介層204上，以與中介層204的相對側上的裝置聯絡。
第19圖顯示在另一實施例中，具有多個堆疊的中 介層204的中介層配置1900。在這樣的實施例中，改向層結構402可設置在中介層204內、在中介層204的底部上、或在兩個表面上，以重新改置在不同中介層中的中介層凸塊110之間的連接。因此，可堆疊多個中介層204，且改向層結構402及中介層110的結合可利用一或多個預先界定的中介層204提供重新導向電性接觸的能力，這些中介層的設計係用以客製化電性連接地圖。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
1600‧‧‧電路
1604‧‧‧導線接合
1618、1610‧‧‧連接點
1608‧‧‧印刷電路板
1614‧‧‧焊料球安裝
1606、1612‧‧‧安裝墊
1202‧‧‧層間安裝凸塊
1300‧‧‧中介層組件
602‧‧‧層間連接結構
1616‧‧‧目標載體電路板
1602‧‧‧記憶體晶片
1620‧‧‧頂部封裝體
202‧‧‧載體平板
204‧‧‧中介層

Claims (10)

  1. 一種中介層(interposer)組件的建構方法，包括：在一導電安裝板(conductive mounting plate)上安裝至少一導電中介層凸塊(conductive interposer stud)；在該至少一導電中介層凸塊周圍模造一載體平板(carrier plane)，使得該導電安裝板的至少一第一表面在該載體平板外，且該導電安裝板的至少一第二表面與該載體平板的一第一表面接觸；在該載體平板的該第一表面上形成一第一改向層(redirect layer)，該第一改向層與該至少一導電中介層凸塊電性接觸；將至少一第一積體電路晶粒的至少一部分接合至該第一改向層的至少一部分，使得該第一積體電路晶粒與該至少一導電中介層凸塊通信聯絡(signal communication)；在該載體平板的該第二表面上形成一第二改向層；將一第二積體電路晶粒的至少一部分接合至該第二改向層的至少一部分，使得該第二積體電路晶粒與該至少一導電中介層凸塊通信聯絡；以及將至少一第一層間連接結構(first interlevel connection structure)接合至該第一改向層的至少一部分，使得該至少一第一層間連接結構與該至少一導電中介層凸塊通信聯絡，以及其中，該第一層間連接結構係用以支撐該中介層組件，該中介層組件安裝於與一目標載體板材(target carrier board)具有一第一分開距離的位置。
  2. 如申請專利範圍第1項所述之中介層組件的建構方法，其中 該方法之形成該第二改向層的步驟包括在該載體平板的該第二表面移除該載體平板的至少一部分，使得至少一導電中介層凸塊的一部分在該載體平板的該第二表面暴露出來。
  3. 如申請專利範圍第1項所述之中介層組件的建構方法，其中安裝該至少一導電中介層凸塊的步驟包括由一導電金屬形成該至少一中介層凸塊，以及將該導電中介層凸塊焊接至該安裝板。
  4. 如申請專利範圍第1項所述之中介層組件的建構方法，其中形成該第一改向層的步驟包括修飾該導電安裝板以形成該第一改向層。
  5. 如申請專利範圍第1項所述之中介層組件的建構方法，更包括：將至少一第二層間連接結構接合至該第二改向層的至少一部分，使得該至少一第二層間連接結構與該至少一導電中介層凸塊通信聯絡；以及將一頂部封裝體接合至至少一第二層間連接結構，該頂部封裝體包括至少一積體電路晶粒及至少一安裝板，使得該頂部封裝體的該積體電路晶粒與該至少一第二層間連接結構通信聯絡。
  6. 一種中介層組件的建構方法，包括：在一導電安裝板上安裝一或多個導電中介層凸塊；在一背載板(backup plate)上安裝該導電安裝板；在該至少一導電中介層凸塊周圍模造一載體平板(carrier plane)，使得該導電安裝板介於該載體平板及該背載板之間，該導電安裝板與該載體平板的一第一表面接觸；在該載體平板的該第一表面上形成一第一改向層，該第一導向層與至少一導電中介層凸塊電性接觸；將至少一第一積體電路晶粒的至少一部分接合至該載體平板的該第一表面及該第一改向層的至少一部分，使得該第一積體電路晶粒與該至少一導電中介層凸塊通信聯絡(signal communication)；將一第二積體電路晶粒的至少一部分接合至該載體平板的該第二表面，使得該第二積體電路晶粒與該至少一導電中介層凸塊及該第一積體電路晶粒通信聯絡；將至少一第一層間連接結構接合至該第一改向層的至少一部分，使得至少一第一層間連接結構與該至少一導電中介層凸塊通信聯絡；將至少一第二層間連接結構接合至該載體平板的該第二表面，使得該至少一第二層間連接結構與該至少一導電中介層凸塊及該至少一第一積體電路晶粒經由該至少一導電中介層凸塊通信聯絡；以及將一頂部封裝體(top package)接合至至少一第二層間連接結構，其中該頂部封裝體包括至少一積體電路及至少一安裝板，以及其中該頂部封裝體的該積體電路與該至少一第二層間連接結構及該至少一第一積體電路晶粒通信聯絡。
  7. 一種中介層封裝體裝置(interposer package apparatus)，包括： 複數個第一中介層凸塊；至少一環氧樹脂載體平板，模造於至少一該複數個第一中介層凸塊周圍；一第一改向層結構，具有至少一裝置安裝墊(device mounting pad)及至少一板材安裝墊(board mounting pad)，且設置在該載體平板的一第一表面上，其中至少一該複數個第一中介層凸塊電性連接至該第一改向層；一第二改向層結構，具有至少一裝置安裝墊及至少一板材安裝墊，以及設置在該載體平板的該第二表面上，其中該第二改向層電性連接至至少一中介層凸塊；至少一第一積體電路晶粒，接合至該第一改向層；至少一第二積體電路晶粒，接合至該第二改向層；以及至少一第二中介層凸塊，接合至該第二改向層的一板材安裝墊，以及電性連接至該第一改向層的至少一部分，以及其中，該至少一第二中介層凸塊係用以安裝一頂部封裝體，並在自該第二積體電路晶粒的一第一方向支撐該頂部封裝體。
  8. 如申請專利範圍第7項所述之中介層封裝體裝置，其中該載體平板的該環氧樹脂為一熱固性環氧樹脂材料(thermal set epoxy material)；其中，該裝置更包括一底膠填充，填入該第一積體電路晶粒及該載體平板之間的空間，該底膠填充包括該熱固化環氧樹脂材料；以及其中，該裝置更包括一底膠填充，填入該第二積體電路晶 粒及該載體平板之間的空間，該底膠填充包括該熱固化環氧樹脂材料。
  9. 如申請專利範圍第7項所述之中介層封裝體裝置，其中該複數個第一中介層凸塊經由一導線接合焊接技術(wire bonding welding technique)將該複數個第一中介層凸塊導線接合至該第一改向層。
  10. 如申請專利範圍第7項所述之中介層封裝體裝置，其中該複數個第一中介層凸塊係擠壓凸出的凸塊，焊接至該第一改向層。
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US20140084459A1 (en) 2014-03-27
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US8916956B2 (en) 2014-12-23
US20140001612A1 (en) 2014-01-02
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