TWI515914B - 以負斜角封端之具高阻隔電壓的碳化矽元件 - Google Patents

以負斜角封端之具高阻隔電壓的碳化矽元件 Download PDF

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Publication number
TWI515914B
TWI515914B TW101117452A TW101117452A TWI515914B TW I515914 B TWI515914 B TW I515914B TW 101117452 A TW101117452 A TW 101117452A TW 101117452 A TW101117452 A TW 101117452A TW I515914 B TWI515914 B TW I515914B
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TW
Taiwan
Prior art keywords
layer
sic semiconductor
conductivity type
bevel edge
negative bevel
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TW101117452A
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English (en)
Chinese (zh)
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TW201308620A (zh
Inventor
張清純
奎格 凱波
安那 阿加娃
柳世衡
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克立公司
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Publication of TW201308620A publication Critical patent/TW201308620A/zh
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Publication of TWI515914B publication Critical patent/TWI515914B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/199—Anode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
TW101117452A 2011-05-16 2012-05-16 以負斜角封端之具高阻隔電壓的碳化矽元件 TWI515914B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/108,366 US9337268B2 (en) 2011-05-16 2011-05-16 SiC devices with high blocking voltage terminated by a negative bevel

Publications (2)

Publication Number Publication Date
TW201308620A TW201308620A (zh) 2013-02-16
TWI515914B true TWI515914B (zh) 2016-01-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW101117452A TWI515914B (zh) 2011-05-16 2012-05-16 以負斜角封端之具高阻隔電壓的碳化矽元件

Country Status (6)

Country Link
US (1) US9337268B2 (enExample)
EP (1) EP2710635B1 (enExample)
JP (2) JP6025823B2 (enExample)
CN (1) CN103748684B (enExample)
TW (1) TWI515914B (enExample)
WO (1) WO2012158438A1 (enExample)

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WO2013107508A1 (en) * 2012-01-18 2013-07-25 Fairchild Semiconductor Corporation Bipolar junction transistor with spacer layer and method of manufacturing the same
JP6419414B2 (ja) * 2013-03-22 2018-11-07 株式会社東芝 ＳｉＣエピタキシャルウェハおよび半導体装置
US9704718B2 (en) 2013-03-22 2017-07-11 Infineon Technologies Austria Ag Method for manufacturing a silicon carbide device and a silicon carbide device
US9236458B2 (en) * 2013-07-11 2016-01-12 Infineon Technologies Ag Bipolar transistor and a method for manufacturing a bipolar transistor
US9425265B2 (en) 2013-08-16 2016-08-23 Cree, Inc. Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure
CN104882357A (zh) * 2014-02-28 2015-09-02 株洲南车时代电气股份有限公司 半导体器件耐压终端结构及其应用于SiC器件的制造方法
JP6871562B2 (ja) * 2016-11-16 2021-05-12 富士電機株式会社 炭化珪素半導体素子およびその製造方法
CN106684132B (zh) * 2016-12-29 2019-10-01 西安电子科技大学 基于有源区沟槽结构的碳化硅双极型晶体管及其制作方法
CN110521000A (zh) * 2017-04-24 2019-11-29 力特半导体（无锡）有限公司 改进的场阻止晶闸管结构及其制造方法
EP3496153B1 (en) 2017-12-05 2021-05-19 STMicroelectronics S.r.l. Manufacturing method of a semiconductor device with efficient edge structure
CN107910360A (zh) * 2017-12-06 2018-04-13 中国工程物理研究院电子工程研究所 一种新型碳化硅小角度倾斜台面终端结构及其制备方法
CN109065614A (zh) * 2018-08-22 2018-12-21 电子科技大学 一种碳化硅门极可关断晶闸管
US12218255B2 (en) * 2018-10-09 2025-02-04 National Technology & Engineering Solutions Of Sandia, Llc High voltage gallium nitride vertical PN diode
CN109346515B (zh) * 2018-11-15 2021-06-08 电子科技大学 一种碳化硅绝缘栅双极型晶体管
CN109346517B (zh) * 2018-11-15 2021-06-08 电子科技大学 一种碳化硅mos栅控晶闸管
US11579645B2 (en) * 2019-06-21 2023-02-14 Wolfspeed, Inc. Device design for short-circuitry protection circuitry within transistors
CN110690268B (zh) * 2019-09-19 2025-12-02 清华大学 具有p型漂移区的gct芯片结构及制备方法
JP7074173B2 (ja) * 2020-10-16 2022-05-24 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7628865B2 (ja) 2021-03-31 2025-02-12 株式会社デンソー ダイオードとその製造方法
CN114783875B (zh) * 2022-06-22 2022-12-13 泰科天润半导体科技（北京）有限公司 具有四层外延的碳化硅凹槽mos栅控晶闸管的制造方法

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Also Published As

Publication number Publication date
JP6407920B2 (ja) 2018-10-17
EP2710635A1 (en) 2014-03-26
WO2012158438A4 (en) 2013-01-03
US20120292636A1 (en) 2012-11-22
JP6025823B2 (ja) 2016-11-16
JP2016189480A (ja) 2016-11-04
JP2014518016A (ja) 2014-07-24
CN103748684A (zh) 2014-04-23
US9337268B2 (en) 2016-05-10
TW201308620A (zh) 2013-02-16
CN103748684B (zh) 2017-06-09
WO2012158438A1 (en) 2012-11-22
EP2710635B1 (en) 2018-01-17

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