JP2014518016A - 負べベルにより終端された高阻止電圧を有するSiCデバイス - Google Patents
負べベルにより終端された高阻止電圧を有するSiCデバイス Download PDFInfo
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- 230000000903 blocking effect Effects 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 74
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 80
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 49
- 150000002500 ions Chemical class 0.000 claims description 21
- 230000007935 neutral effect Effects 0.000 claims description 15
- 230000005684 electric field Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000013459 approach Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
Description
この明細書に組み込まれその一部を形成する添付図面は、本発明のいくつかの態様を示しており、記述とともに本発明の原理を説明するものである。
Claims (25)
- 炭化ケイ素(SiC)半導体デバイスであって、滑らかな傾斜に近似する複数段の負ベベルのエッジターミネーションを備え、該SiC半導体デバイスの阻止電圧が少なくとも10kVsであることを特徴とする、SiC半導体デバイス。
- 請求項1記載のSiC半導体デバイスにおいて、複数段の負ベベルのエッジターミネーションは少なくとも5段を含むことを特徴とするSiC半導体デバイス。
- 請求項1記載のSiC半導体デバイスにおいて、複数段の負ベベルのエッジターミネーションは少なくとも10段を含むことを特徴とするSiC半導体デバイス。
- 請求項1記載のSiC半導体デバイスにおいて、複数段の負ベベルのエッジターミネーションは少なくとも15段を含むことを特徴とするSiC半導体デバイス。
- 請求項1〜4いずれかに記載のSiC半導体デバイスにおいて、該SiC半導体デバイスの阻止電圧は、少なくとも12kVであることを特徴とするSiC半導体デバイス。
- 請求項1〜4いずれかに記載のSiC半導体デバイスにおいて、該SiC半導体デバイスの阻止電圧は10〜25kVを含む範囲にあることを特徴とするSiC半導体デバイス。
- 請求項1〜4いずれかに記載のSiC半導体デバイスにおいて、該SiC半導体デバイスの阻止電圧は12〜25kVを含む範囲にあることを特徴とするSiC半導体デバイス。
- 請求項1〜7いずれかに記載のSiC半導体デバイスにおいて、該SiC半導体デバイスのダイ領域は1cm2以上であることを特徴とするSiC半導体デバイス。
- 請求項1〜8いずれかに記載のSiC半導体デバイスにおいて、複数段の負ベベルのエッジターミネーションの傾斜角は15度以下であることを特徴とするSiC半導体デバイス。
- 請求項1〜9いずれかに記載のSiC半導体デバイスにおいて、複数段の負ベベルのエッジターミネーションは、SiC半導体デバイスの対応する層の表面上に形成された複数の段を備えていることを特徴とするSiC半導体デバイス。
- 請求項1〜9いずれかに記載のSiC半導体デバイスであって、
該デバイスは第1の導電型の半導体層を備え、
該半導体層のエッジ領域において、半導体層の表面を第2の導電型のイオンでカウンタドープすることにより、所望の負べベル特性を有する中性領域が半導体層に形成され、該中性領域と半導体層の残りの部分との間の界面に複数段の負ベベルのエッジターミネーションが形成されている
ことを特徴とするSiC半導体デバイス。 - 請求項1〜9いずれかに記載のSiC半導体デバイスにおいて、該SiC半導体デバイスはサイリスタであり、該サイリスタは、
第1の導電型の基板と、
該基板の表面上にある第2の導電型のドリフト層と、
該ドリフト層の表面であって基板とは反対側の表面上にある第1の導電型のベース層と、
ベース層の表面であってドリフト層とは反対側の表面上にある第2の導電型のアノードメサと
を備え、
ゲート領域が、ベース層の前記表面に形成され、
複数段の負ベベルのエッジターミネーションが、ゲート領域の前記アノードメサとは反対側と隣接するベース層に形成されている
ことを特徴とするSiC半導体デバイス。 - 請求項12記載のSiC半導体において、複数段の負ベベルのエッジターミネーションは、ゲート領域のアノードメサとは反対側に隣接するベース層の表面上に形成されていることを特徴とするSiC半導体デバイス。
- 請求項12記載のSiC半導体において、ゲート領域のアノードメサとは反対側に隣接するベース層のエッジ領域の表面を、第2の導電型のイオンでカウンタドープすることにより、所望の負べベル特性を有する中性領域がベース層に形成され、該中性領域とベース層の残りの部分との間の界面に複数段の負ベベルのエッジターミネーションが形成されていることを特徴とするSiC半導体デバイス。
- 請求項1〜11いずれかに記載のSiC半導体デバイスにおいて、該SiC半導体デバイスはバイポーラ接合トランジスタ(BJT)であり、該トランジスタは、
第1の導電型の基板と、
該基板の表面上の第1の導電型のドリフト層と、
該ドリフト層の表面であって基板とは反対側の表面上にある第2の導電型のベース層と、
ベース層の表面であってドリフト層とは反対側の表面に形成された第2の導電型のベース領域と、
ベース層の表面であってコレクタ層とは反対側でありベース領域に隣接する表面上にあるエミッタメサと
を備え、
複数段の負ベベルのエッジターミネーションが、ベース領域の前記エミッタメサとは反対側に隣接するベース層に形成されている
ことを特徴とするSiC半導体デバイス。 - 請求項1〜11いずれかに記載のSiC半導体デバイスにおいて、該SiC半導体デバイスはバイポーラ接合トランジスタ(BJT)であり、該BJTは、
第1の導電型の基板と、
該基板の表面上の第2の導電型のドリフト層と、
該ドリフト層の表面であって基板とは反対側の表面上にある第1の導電型のベース層と、
該ベース層の表面であってドリフト層とは反対側の表面にある第2の導電型のエミッタ領域と、
BJTの表面のエミッタ領域に隣接して形成され、ドリフト層の中へ延びているゲートトレンチと
を備え、
複数段の負ベベルのエッジターミネーションが、エミッタ領域のゲートトレンチとは反対側に隣接するベース層に形成されている
ことを特徴とするSiC半導体デバイス。 - 請求項1〜11いずれかに記載のSiC半導体デバイスにおいて、該SiC半導体デバイスはUチャネルMOSFET(UMOSFET)であり、該UMOSFETは、
第1の導電型の基板と、
該基板の表面上の第1の導電型のドリフト層と、
該ドリフト層の表面であって基板とは反対側の表面上にある第2の導電型のベース層と、
該ベース層の表面であってドリフト層とは反対側の表面にある第1の導電型のソース領域と、
UMOSFETの表面のソース領域に近接して形成され、ドリフト層の中へ延びているゲートトレンチと
を備え、
複数段の負ベベルのエッジターミネーションが、ソース領域のゲートトレンチとは反対側と隣接するベース層に形成されている
ことを特徴とするSiC半導体デバイス。 - 請求項1〜11いずれかに記載のSiC半導体デバイスにおいて、該SiC半導体デバイスはPINダイオードであり、該ダイオードは、
第1の導電型の基板と、
該基板の表面上の第1の導電型のドリフト層と、
該ドリフト層の表面であって基板とは反対側の表面上にある第2の導電型の半導体層と、
第2の導電型の半導体層の表面であってドリフト層とは反対側の表面上あるアノードメサと、
該アノードメサの表面であってドリフト層とは反対側の表面上あるアノードコンタクトと、
基板の表面であってドリフト層とは反対側の表面上にあるカソードコンタクトと
を備え、
複数段の負ベベルのエッジターミネーションが、アノードメサと近接する第2の導電型の半導体層に形成されている
ことを特徴とするSiC半導体デバイス。 - 請求項1〜11いずれかに記載のSiC半導体デバイスにおいて、該SiC半導体デバイスは、サイリスタ、バイポーラ接合トランジスタ(BJT)、絶縁ゲートバイポーラトランジスタ(IGBT)、UチャネルMOSFET(UMOSFET)、及びPINダイオードからなる群のうちの1つであることを特徴とするSiC半導体デバイス。
- 少なくとも10kVの阻止電圧を有する炭化ケイ素(SiC)半導体デバイス。
- 請求項20記載のSiC半導体デバイスにおいて、阻止電圧は少なくとも12kVであることを特徴とするSiC半導体デバイス。
- 少なくとも5段を含む複数段の負ベベルのエッジターミネーションを備えた炭化ケイ素(SiC)半導体デバイス。
- 請求項22記載のSiC半導体デバイスにおいて、複数段の負ベベルのエッジターミネーションは、少なくとも10段を含むことを特徴とするSiC半導体デバイス。
- 請求項22記載のSiC半導体デバイスにおいて、複数段の負ベベルのエッジターミネーションは、少なくとも15段を含むことを特徴とするSiC半導体デバイス。
- 請求項22記載のSiC半導体デバイスにおいて、前記複数段の負ベベルのエッジターミネーションは、10〜25段を含む範囲の段数を含むことを特徴とするSiC半導体デバイス。
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