JP6025823B2 - 負べベルにより終端された高阻止電圧を有するＳｉＣデバイス - Google Patents

負べベルにより終端された高阻止電圧を有するＳｉＣデバイス Download PDF

Info

Publication number
JP6025823B2
JP6025823B2 JP2014511405A JP2014511405A JP6025823B2 JP 6025823 B2 JP6025823 B2 JP 6025823B2 JP 2014511405 A JP2014511405 A JP 2014511405A JP 2014511405 A JP2014511405 A JP 2014511405A JP 6025823 B2 JP6025823 B2 JP 6025823B2
Authority
JP
Japan
Prior art keywords
semiconductor device
edge termination
stages
sic
sic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014511405A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014518016A5 (enExample
JP2014518016A (ja
Inventor
ジャーン，チーンチュン
カペル，クレイグ
アガーワル，アナント・ケイ
リュー，セイ−ヒュン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of JP2014518016A publication Critical patent/JP2014518016A/ja
Publication of JP2014518016A5 publication Critical patent/JP2014518016A5/ja
Application granted granted Critical
Publication of JP6025823B2 publication Critical patent/JP6025823B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/199—Anode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2014511405A 2011-05-16 2012-05-10 負べベルにより終端された高阻止電圧を有するＳｉＣデバイス Active JP6025823B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/108,366 US9337268B2 (en) 2011-05-16 2011-05-16 SiC devices with high blocking voltage terminated by a negative bevel
US13/108,366 2011-05-16
PCT/US2012/037215 WO2012158438A1 (en) 2011-05-16 2012-05-10 Sic devices with high blocking voltage terminated by a negative bevel

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016120345A Division JP6407920B2 (ja) 2011-05-16 2016-06-17 負べベルにより終端された高阻止電圧を有するＳｉＣデバイス

Publications (3)

Publication Number Publication Date
JP2014518016A JP2014518016A (ja) 2014-07-24
JP2014518016A5 JP2014518016A5 (enExample) 2016-04-28
JP6025823B2 true JP6025823B2 (ja) 2016-11-16

Family

ID=46177520

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2014511405A Active JP6025823B2 (ja) 2011-05-16 2012-05-10 負べベルにより終端された高阻止電圧を有するＳｉＣデバイス
JP2016120345A Active JP6407920B2 (ja) 2011-05-16 2016-06-17 負べベルにより終端された高阻止電圧を有するＳｉＣデバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2016120345A Active JP6407920B2 (ja) 2011-05-16 2016-06-17 負べベルにより終端された高阻止電圧を有するＳｉＣデバイス

Country Status (6)

Country Link
US (1) US9337268B2 (enExample)
EP (1) EP2710635B1 (enExample)
JP (2) JP6025823B2 (enExample)
CN (1) CN103748684B (enExample)
TW (1) TWI515914B (enExample)
WO (1) WO2012158438A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349797B2 (en) 2011-05-16 2016-05-24 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
CN103918079B (zh) * 2011-09-11 2017-10-31 科锐 包括具有改进布局的晶体管的高电流密度功率模块
WO2013107508A1 (en) * 2012-01-18 2013-07-25 Fairchild Semiconductor Corporation Bipolar junction transistor with spacer layer and method of manufacturing the same
JP6419414B2 (ja) * 2013-03-22 2018-11-07 株式会社東芝 ＳｉＣエピタキシャルウェハおよび半導体装置
US9704718B2 (en) 2013-03-22 2017-07-11 Infineon Technologies Austria Ag Method for manufacturing a silicon carbide device and a silicon carbide device
US9236458B2 (en) * 2013-07-11 2016-01-12 Infineon Technologies Ag Bipolar transistor and a method for manufacturing a bipolar transistor
US9425265B2 (en) 2013-08-16 2016-08-23 Cree, Inc. Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure
CN104882357A (zh) * 2014-02-28 2015-09-02 株洲南车时代电气股份有限公司 半导体器件耐压终端结构及其应用于SiC器件的制造方法
JP6871562B2 (ja) * 2016-11-16 2021-05-12 富士電機株式会社 炭化珪素半導体素子およびその製造方法
CN106684132B (zh) * 2016-12-29 2019-10-01 西安电子科技大学 基于有源区沟槽结构的碳化硅双极型晶体管及其制作方法
CN110521000A (zh) * 2017-04-24 2019-11-29 力特半导体（无锡）有限公司 改进的场阻止晶闸管结构及其制造方法
EP3496153B1 (en) 2017-12-05 2021-05-19 STMicroelectronics S.r.l. Manufacturing method of a semiconductor device with efficient edge structure
CN107910360A (zh) * 2017-12-06 2018-04-13 中国工程物理研究院电子工程研究所 一种新型碳化硅小角度倾斜台面终端结构及其制备方法
CN109065614A (zh) * 2018-08-22 2018-12-21 电子科技大学 一种碳化硅门极可关断晶闸管
US12218255B2 (en) * 2018-10-09 2025-02-04 National Technology & Engineering Solutions Of Sandia, Llc High voltage gallium nitride vertical PN diode
CN109346515B (zh) * 2018-11-15 2021-06-08 电子科技大学 一种碳化硅绝缘栅双极型晶体管
CN109346517B (zh) * 2018-11-15 2021-06-08 电子科技大学 一种碳化硅mos栅控晶闸管
US11579645B2 (en) * 2019-06-21 2023-02-14 Wolfspeed, Inc. Device design for short-circuitry protection circuitry within transistors
CN110690268B (zh) * 2019-09-19 2025-12-02 清华大学 具有p型漂移区的gct芯片结构及制备方法
JP7074173B2 (ja) * 2020-10-16 2022-05-24 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7628865B2 (ja) 2021-03-31 2025-02-12 株式会社デンソー ダイオードとその製造方法
CN114783875B (zh) * 2022-06-22 2022-12-13 泰科天润半导体科技（北京）有限公司 具有四层外延的碳化硅凹槽mos栅控晶闸管的制造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3581348D1 (de) 1984-09-28 1991-02-21 Siemens Ag Verfahren zum herstellen eines pn-uebergangs mit hoher durchbruchsspannung.
US4648174A (en) 1985-02-05 1987-03-10 General Electric Company Method of making high breakdown voltage semiconductor device
JP2850694B2 (ja) 1993-03-10 1999-01-27 株式会社日立製作所 高耐圧プレーナ型半導体装置
US5970324A (en) 1994-03-09 1999-10-19 Driscoll; John Cuervo Methods of making dual gated power electronic switching devices
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US5967795A (en) * 1995-08-30 1999-10-19 Asea Brown Boveri Ab SiC semiconductor device comprising a pn junction with a voltage absorbing edge
SE9700156D0 (sv) 1997-01-21 1997-01-21 Abb Research Ltd Junction termination for Si C Schottky diode
SE0004377D0 (sv) 2000-11-29 2000-11-29 Abb Research Ltd A semiconductor device and a method for production thereof
JP4604241B2 (ja) 2004-11-18 2011-01-05 独立行政法人産業技術総合研究所 炭化ケイ素ｍｏｓ電界効果トランジスタおよびその製造方法
US7498651B2 (en) 2004-11-24 2009-03-03 Microsemi Corporation Junction termination structures for wide-bandgap power devices
DE102005047102B3 (de) 2005-09-30 2007-05-31 Infineon Technologies Ag Halbleiterbauelement mit pn-Übergang
US7345310B2 (en) * 2005-12-22 2008-03-18 Cree, Inc. Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof
US7372087B2 (en) 2006-06-01 2008-05-13 Northrop Grumman Corporation Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage
JP5147244B2 (ja) * 2007-01-17 2013-02-20 関西電力株式会社 バイポーラ型半導体素子
WO2009061340A1 (en) 2007-11-09 2009-05-14 Cree, Inc. Power semiconductor devices with mesa structures and buffer layers including mesa steps
US8097919B2 (en) * 2008-08-11 2012-01-17 Cree, Inc. Mesa termination structures for power semiconductor devices including mesa step buffers
US7759186B2 (en) 2008-09-03 2010-07-20 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices
SE537101C2 (sv) * 2010-03-30 2015-01-07 Fairchild Semiconductor Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent
JP6050563B2 (ja) 2011-02-25 2016-12-21 富士通株式会社 化合物半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP6407920B2 (ja) 2018-10-17
EP2710635A1 (en) 2014-03-26
TWI515914B (zh) 2016-01-01
WO2012158438A4 (en) 2013-01-03
US20120292636A1 (en) 2012-11-22
JP2016189480A (ja) 2016-11-04
JP2014518016A (ja) 2014-07-24
CN103748684A (zh) 2014-04-23
US9337268B2 (en) 2016-05-10
TW201308620A (zh) 2013-02-16
CN103748684B (zh) 2017-06-09
WO2012158438A1 (en) 2012-11-22
EP2710635B1 (en) 2018-01-17

Similar Documents

Publication Publication Date Title
JP6407920B2 (ja) 負べベルにより終端された高阻止電圧を有するＳｉＣデバイス
US11837629B2 (en) Power semiconductor devices having gate trenches and buried edge terminations and related methods
KR102216528B1 (ko) 주입된 측벽들을 가진 게이트 트렌치들을 갖는 전력 반도체 디바이스들 및 관련 방법들
JP5372002B2 (ja) メサ構造とメサ段差を含むバッファ層とを備えた電力半導体デバイス
JP5185228B2 (ja) 電力半導体デバイスのためのメサ終端構造とメサ終端構造をもつ電力半導体デバイスを形成するための方法
CN101689562B (zh) 半导体器件
US7541660B2 (en) Power semiconductor device
US10109725B2 (en) Reverse-conducting semiconductor device
JP5196766B2 (ja) 半導体装置
US9349797B2 (en) SiC devices with high blocking voltage terminated by a negative bevel
JP6833848B2 (ja) 面積効率の良いフローティングフィールドリング終端
JP5473397B2 (ja) 半導体装置およびその製造方法
JP6335795B2 (ja) 負ベベルにより終端した、高い阻止電圧を有するＳｉＣ素子
WO2018154963A1 (ja) 半導体装置
JP6362702B2 (ja) バイポーラノンパンチスルーパワー半導体デバイス
CN104465733A (zh) 功率半导体器件

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160307

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160318

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160617

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160913

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161011

R150 Certificate of patent or registration of utility model

Ref document number: 6025823

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250