TWI512409B - Charge particle beam rendering device and charged particle beam rendering method - Google Patents
Charge particle beam rendering device and charged particle beam rendering method Download PDFInfo
- Publication number
- TWI512409B TWI512409B TW102106730A TW102106730A TWI512409B TW I512409 B TWI512409 B TW I512409B TW 102106730 A TW102106730 A TW 102106730A TW 102106730 A TW102106730 A TW 102106730A TW I512409 B TWI512409 B TW I512409B
- Authority
- TW
- Taiwan
- Prior art keywords
- proximity effect
- effect correction
- area
- illumination
- amount
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 34
- 239000002245 particle Substances 0.000 title claims description 24
- 238000009877 rendering Methods 0.000 title description 3
- 230000000694 effects Effects 0.000 claims description 185
- 238000012937 correction Methods 0.000 claims description 139
- 238000005286 illumination Methods 0.000 claims description 81
- 238000004364 calculation method Methods 0.000 claims description 67
- 230000005855 radiation Effects 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 description 34
- 238000010586 diagram Methods 0.000 description 10
- 238000000465 moulding Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000002262 irrigation Effects 0.000 description 2
- 238000003973 irrigation Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31776—Shaped beam
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012072473A JP5985852B2 (ja) | 2012-03-27 | 2012-03-27 | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201351055A TW201351055A (zh) | 2013-12-16 |
| TWI512409B true TWI512409B (zh) | 2015-12-11 |
Family
ID=49233607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102106730A TWI512409B (zh) | 2012-03-27 | 2013-02-26 | Charge particle beam rendering device and charged particle beam rendering method |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8872141B2 (enExample) |
| JP (1) | JP5985852B2 (enExample) |
| KR (1) | KR101504530B1 (enExample) |
| TW (1) | TWI512409B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015185800A (ja) * | 2014-03-26 | 2015-10-22 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置、情報処理装置、パターン検査装置及び荷電粒子ビーム描画方法 |
| KR102150972B1 (ko) | 2014-06-05 | 2020-09-03 | 삼성전자주식회사 | 전자 빔 노광 시스템 |
| JP2016082131A (ja) * | 2014-10-20 | 2016-05-16 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置、荷電粒子ビームを用いた描画方法、および荷電粒子ビーム描画でのショット補正方法 |
| JP6438280B2 (ja) * | 2014-11-28 | 2018-12-12 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
| JP6523767B2 (ja) * | 2015-04-21 | 2019-06-05 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP7129676B1 (ja) * | 2021-06-25 | 2022-09-02 | 日本コントロールシステム株式会社 | 電子ビーム描画装置、生産装置、電子ビーム描画方法、生産方法、プログラム |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070196768A1 (en) * | 2006-02-22 | 2007-08-23 | Fujitsu Limited | Charged particle beam projection method and program used therefor |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0778737A (ja) * | 1993-09-08 | 1995-03-20 | Fujitsu Ltd | 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置 |
| JP3469422B2 (ja) | 1996-02-23 | 2003-11-25 | 株式会社東芝 | 荷電ビーム描画方法及び描画装置 |
| JP3655622B2 (ja) | 1996-02-23 | 2005-06-02 | 株式会社東芝 | 荷電ビーム描画方法及び描画装置 |
| JP4621076B2 (ja) | 2005-06-21 | 2011-01-26 | 株式会社アドバンテスト | 電子ビーム露光装置 |
| JP4989158B2 (ja) | 2005-09-07 | 2012-08-01 | 株式会社ニューフレアテクノロジー | 荷電粒子線描画データの作成方法及び荷電粒子線描画データの変換方法 |
| JP4476975B2 (ja) | 2005-10-25 | 2010-06-09 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム照射量演算方法、荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置 |
| TWI323004B (en) | 2005-12-15 | 2010-04-01 | Nuflare Technology Inc | Charged particle beam writing method and apparatus |
| JP5001563B2 (ja) | 2006-03-08 | 2012-08-15 | 株式会社ニューフレアテクノロジー | 荷電粒子線描画データの作成方法 |
| JP4751273B2 (ja) | 2006-08-17 | 2011-08-17 | 株式会社ニューフレアテクノロジー | 描画装置の描画エラー検証方法及び描画装置の描画エラー検証用データの作成装置 |
| JP2008071928A (ja) | 2006-09-14 | 2008-03-27 | Nuflare Technology Inc | 描画パターンのリサイズ方法及び荷電粒子ビーム描画方法 |
| JP4751353B2 (ja) | 2007-03-06 | 2011-08-17 | 株式会社ニューフレアテクノロジー | データ検証方法及び荷電粒子ビーム描画装置 |
| JP4945380B2 (ja) | 2007-09-05 | 2012-06-06 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP5020849B2 (ja) | 2008-02-13 | 2012-09-05 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置、パターンの寸法誤差補正装置及びパターンの寸法誤差補正方法 |
| JP5243898B2 (ja) | 2008-09-19 | 2013-07-24 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法 |
| JP5199896B2 (ja) | 2009-01-06 | 2013-05-15 | 株式会社ニューフレアテクノロジー | 描画方法及び描画装置 |
| JP5466416B2 (ja) | 2009-03-19 | 2014-04-09 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法および装置 |
| JP5403603B2 (ja) | 2009-05-28 | 2014-01-29 | 株式会社ニューフレアテクノロジー | 描画装置の描画エラー検証方法及び描画装置の描画エラー検証用データの作成装置 |
| JP5586183B2 (ja) | 2009-07-15 | 2014-09-10 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法および装置 |
| JP5570774B2 (ja) | 2009-08-04 | 2014-08-13 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置および方法 |
| JP5567802B2 (ja) | 2009-08-19 | 2014-08-06 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置、荷電粒子ビーム描画方法、および、荷電粒子ビーム描画用データの処理装置 |
| JP5498106B2 (ja) | 2009-09-15 | 2014-05-21 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
| JP5498105B2 (ja) | 2009-09-15 | 2014-05-21 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
| JP5530688B2 (ja) | 2009-09-18 | 2014-06-25 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置およびその近接効果補正方法 |
| JP5616674B2 (ja) | 2010-04-20 | 2014-10-29 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP5547553B2 (ja) | 2010-05-26 | 2014-07-16 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置およびその制御方法 |
| JP5525936B2 (ja) | 2010-06-30 | 2014-06-18 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP5547567B2 (ja) | 2010-06-30 | 2014-07-16 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置およびその制御方法 |
| JP5636238B2 (ja) | 2010-09-22 | 2014-12-03 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP5601989B2 (ja) | 2010-11-19 | 2014-10-08 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP5809419B2 (ja) | 2011-02-18 | 2015-11-10 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP5797454B2 (ja) | 2011-05-20 | 2015-10-21 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP5792513B2 (ja) | 2011-05-20 | 2015-10-14 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP5871558B2 (ja) | 2011-10-20 | 2016-03-01 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
-
2012
- 2012-03-27 JP JP2012072473A patent/JP5985852B2/ja active Active
-
2013
- 2013-02-12 US US13/765,140 patent/US8872141B2/en not_active Ceased
- 2013-02-26 TW TW102106730A patent/TWI512409B/zh active
- 2013-03-18 KR KR1020130028576A patent/KR101504530B1/ko active Active
-
2016
- 2016-10-10 US US15/289,706 patent/USRE47707E1/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070196768A1 (en) * | 2006-02-22 | 2007-08-23 | Fujitsu Limited | Charged particle beam projection method and program used therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130256519A1 (en) | 2013-10-03 |
| JP2013206996A (ja) | 2013-10-07 |
| KR20130110034A (ko) | 2013-10-08 |
| US8872141B2 (en) | 2014-10-28 |
| TW201351055A (zh) | 2013-12-16 |
| JP5985852B2 (ja) | 2016-09-06 |
| USRE47707E1 (en) | 2019-11-05 |
| KR101504530B1 (ko) | 2015-03-20 |
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