JP5985852B2 - 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 - Google Patents

荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 Download PDF

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JP5985852B2
JP5985852B2 JP2012072473A JP2012072473A JP5985852B2 JP 5985852 B2 JP5985852 B2 JP 5985852B2 JP 2012072473 A JP2012072473 A JP 2012072473A JP 2012072473 A JP2012072473 A JP 2012072473A JP 5985852 B2 JP5985852 B2 JP 5985852B2
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proximity effect
area
effect correction
dose
coefficient
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JP2013206996A (ja
JP2013206996A5 (enExample
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加藤　靖雄
靖雄 加藤
純 八島
純 八島
彰人 安保
彰人 安保
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Nuflare Technology Inc
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Nuflare Technology Inc
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Priority to JP2012072473A priority Critical patent/JP5985852B2/ja
Priority to US13/765,140 priority patent/US8872141B2/en
Priority to TW102106730A priority patent/TWI512409B/zh
Priority to KR1020130028576A priority patent/KR101504530B1/ko
Publication of JP2013206996A publication Critical patent/JP2013206996A/ja
Publication of JP2013206996A5 publication Critical patent/JP2013206996A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2012072473A 2012-03-27 2012-03-27 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 Active JP5985852B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012072473A JP5985852B2 (ja) 2012-03-27 2012-03-27 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US13/765,140 US8872141B2 (en) 2012-03-27 2013-02-12 Charged particle beam writing apparatus and charged particle beam writing method
TW102106730A TWI512409B (zh) 2012-03-27 2013-02-26 Charge particle beam rendering device and charged particle beam rendering method
KR1020130028576A KR101504530B1 (ko) 2012-03-27 2013-03-18 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법
US15/289,706 USRE47707E1 (en) 2012-03-27 2016-10-10 Charged particle beam writing apparatus and charged particle beam writing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012072473A JP5985852B2 (ja) 2012-03-27 2012-03-27 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

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JP2016153634A Division JP6171062B2 (ja) 2016-08-04 2016-08-04 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

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JP2013206996A JP2013206996A (ja) 2013-10-07
JP2013206996A5 JP2013206996A5 (enExample) 2015-03-26
JP5985852B2 true JP5985852B2 (ja) 2016-09-06

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US (2) US8872141B2 (enExample)
JP (1) JP5985852B2 (enExample)
KR (1) KR101504530B1 (enExample)
TW (1) TWI512409B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015185800A (ja) * 2014-03-26 2015-10-22 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、情報処理装置、パターン検査装置及び荷電粒子ビーム描画方法
KR102150972B1 (ko) 2014-06-05 2020-09-03 삼성전자주식회사 전자 빔 노광 시스템
JP2016082131A (ja) * 2014-10-20 2016-05-16 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、荷電粒子ビームを用いた描画方法、および荷電粒子ビーム描画でのショット補正方法
JP6438280B2 (ja) * 2014-11-28 2018-12-12 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6523767B2 (ja) * 2015-04-21 2019-06-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP7129676B1 (ja) * 2021-06-25 2022-09-02 日本コントロールシステム株式会社 電子ビーム描画装置、生産装置、電子ビーム描画方法、生産方法、プログラム

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JPH0778737A (ja) * 1993-09-08 1995-03-20 Fujitsu Ltd 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置
JP3469422B2 (ja) 1996-02-23 2003-11-25 株式会社東芝 荷電ビーム描画方法及び描画装置
JP3655622B2 (ja) 1996-02-23 2005-06-02 株式会社東芝 荷電ビーム描画方法及び描画装置
JP4621076B2 (ja) 2005-06-21 2011-01-26 株式会社アドバンテスト 電子ビーム露光装置
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TWI323004B (en) 2005-12-15 2010-04-01 Nuflare Technology Inc Charged particle beam writing method and apparatus
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JP5403603B2 (ja) 2009-05-28 2014-01-29 株式会社ニューフレアテクノロジー 描画装置の描画エラー検証方法及び描画装置の描画エラー検証用データの作成装置
JP5586183B2 (ja) 2009-07-15 2014-09-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および装置
JP5570774B2 (ja) 2009-08-04 2014-08-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および方法
JP5567802B2 (ja) 2009-08-19 2014-08-06 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、荷電粒子ビーム描画方法、および、荷電粒子ビーム描画用データの処理装置
JP5498106B2 (ja) 2009-09-15 2014-05-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP5498105B2 (ja) 2009-09-15 2014-05-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP5530688B2 (ja) 2009-09-18 2014-06-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその近接効果補正方法
JP5616674B2 (ja) 2010-04-20 2014-10-29 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5547553B2 (ja) 2010-05-26 2014-07-16 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその制御方法
JP5525936B2 (ja) 2010-06-30 2014-06-18 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5547567B2 (ja) 2010-06-30 2014-07-16 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその制御方法
JP5636238B2 (ja) 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5601989B2 (ja) 2010-11-19 2014-10-08 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5809419B2 (ja) 2011-02-18 2015-11-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5797454B2 (ja) 2011-05-20 2015-10-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5792513B2 (ja) 2011-05-20 2015-10-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5871558B2 (ja) 2011-10-20 2016-03-01 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

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Publication number Publication date
US20130256519A1 (en) 2013-10-03
JP2013206996A (ja) 2013-10-07
KR20130110034A (ko) 2013-10-08
US8872141B2 (en) 2014-10-28
TWI512409B (zh) 2015-12-11
TW201351055A (zh) 2013-12-16
USRE47707E1 (en) 2019-11-05
KR101504530B1 (ko) 2015-03-20

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