KR101504530B1 - 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 - Google Patents

하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 Download PDF

Info

Publication number
KR101504530B1
KR101504530B1 KR1020130028576A KR20130028576A KR101504530B1 KR 101504530 B1 KR101504530 B1 KR 101504530B1 KR 1020130028576 A KR1020130028576 A KR 1020130028576A KR 20130028576 A KR20130028576 A KR 20130028576A KR 101504530 B1 KR101504530 B1 KR 101504530B1
Authority
KR
South Korea
Prior art keywords
proximity effect
area
effect correction
irradiation
coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020130028576A
Other languages
English (en)
Korean (ko)
Other versions
KR20130110034A (ko
Inventor
야스오 카토
준 야시마
아키히토 안포
Original Assignee
가부시키가이샤 뉴플레어 테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 뉴플레어 테크놀로지 filed Critical 가부시키가이샤 뉴플레어 테크놀로지
Publication of KR20130110034A publication Critical patent/KR20130110034A/ko
Application granted granted Critical
Publication of KR101504530B1 publication Critical patent/KR101504530B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020130028576A 2012-03-27 2013-03-18 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 Active KR101504530B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-072473 2012-03-27
JP2012072473A JP5985852B2 (ja) 2012-03-27 2012-03-27 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Publications (2)

Publication Number Publication Date
KR20130110034A KR20130110034A (ko) 2013-10-08
KR101504530B1 true KR101504530B1 (ko) 2015-03-20

Family

ID=49233607

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130028576A Active KR101504530B1 (ko) 2012-03-27 2013-03-18 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법

Country Status (4)

Country Link
US (2) US8872141B2 (enExample)
JP (1) JP5985852B2 (enExample)
KR (1) KR101504530B1 (enExample)
TW (1) TWI512409B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015185800A (ja) * 2014-03-26 2015-10-22 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、情報処理装置、パターン検査装置及び荷電粒子ビーム描画方法
KR102150972B1 (ko) 2014-06-05 2020-09-03 삼성전자주식회사 전자 빔 노광 시스템
JP2016082131A (ja) * 2014-10-20 2016-05-16 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、荷電粒子ビームを用いた描画方法、および荷電粒子ビーム描画でのショット補正方法
JP6438280B2 (ja) * 2014-11-28 2018-12-12 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6523767B2 (ja) * 2015-04-21 2019-06-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP7129676B1 (ja) * 2021-06-25 2022-09-02 日本コントロールシステム株式会社 電子ビーム描画装置、生産装置、電子ビーム描画方法、生産方法、プログラム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070196768A1 (en) 2006-02-22 2007-08-23 Fujitsu Limited Charged particle beam projection method and program used therefor

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0778737A (ja) * 1993-09-08 1995-03-20 Fujitsu Ltd 荷電粒子ビーム露光方法及び荷電粒子ビーム露光装置
JP3469422B2 (ja) 1996-02-23 2003-11-25 株式会社東芝 荷電ビーム描画方法及び描画装置
JP3655622B2 (ja) 1996-02-23 2005-06-02 株式会社東芝 荷電ビーム描画方法及び描画装置
JP4621076B2 (ja) 2005-06-21 2011-01-26 株式会社アドバンテスト 電子ビーム露光装置
JP4989158B2 (ja) 2005-09-07 2012-08-01 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法及び荷電粒子線描画データの変換方法
JP4476975B2 (ja) 2005-10-25 2010-06-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム照射量演算方法、荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置
TWI323004B (en) 2005-12-15 2010-04-01 Nuflare Technology Inc Charged particle beam writing method and apparatus
JP5001563B2 (ja) 2006-03-08 2012-08-15 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法
JP4751273B2 (ja) 2006-08-17 2011-08-17 株式会社ニューフレアテクノロジー 描画装置の描画エラー検証方法及び描画装置の描画エラー検証用データの作成装置
JP2008071928A (ja) 2006-09-14 2008-03-27 Nuflare Technology Inc 描画パターンのリサイズ方法及び荷電粒子ビーム描画方法
JP4751353B2 (ja) 2007-03-06 2011-08-17 株式会社ニューフレアテクノロジー データ検証方法及び荷電粒子ビーム描画装置
JP4945380B2 (ja) 2007-09-05 2012-06-06 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5020849B2 (ja) 2008-02-13 2012-09-05 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、パターンの寸法誤差補正装置及びパターンの寸法誤差補正方法
JP5243898B2 (ja) 2008-09-19 2013-07-24 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法
JP5199896B2 (ja) 2009-01-06 2013-05-15 株式会社ニューフレアテクノロジー 描画方法及び描画装置
JP5466416B2 (ja) 2009-03-19 2014-04-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および装置
JP5403603B2 (ja) 2009-05-28 2014-01-29 株式会社ニューフレアテクノロジー 描画装置の描画エラー検証方法及び描画装置の描画エラー検証用データの作成装置
JP5586183B2 (ja) 2009-07-15 2014-09-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および装置
JP5570774B2 (ja) 2009-08-04 2014-08-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および方法
JP5567802B2 (ja) 2009-08-19 2014-08-06 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、荷電粒子ビーム描画方法、および、荷電粒子ビーム描画用データの処理装置
JP5498106B2 (ja) 2009-09-15 2014-05-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP5498105B2 (ja) 2009-09-15 2014-05-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP5530688B2 (ja) 2009-09-18 2014-06-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその近接効果補正方法
JP5616674B2 (ja) 2010-04-20 2014-10-29 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5547553B2 (ja) 2010-05-26 2014-07-16 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその制御方法
JP5525936B2 (ja) 2010-06-30 2014-06-18 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5547567B2 (ja) 2010-06-30 2014-07-16 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその制御方法
JP5636238B2 (ja) 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5601989B2 (ja) 2010-11-19 2014-10-08 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5809419B2 (ja) 2011-02-18 2015-11-10 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5797454B2 (ja) 2011-05-20 2015-10-21 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5792513B2 (ja) 2011-05-20 2015-10-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5871558B2 (ja) 2011-10-20 2016-03-01 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070196768A1 (en) 2006-02-22 2007-08-23 Fujitsu Limited Charged particle beam projection method and program used therefor
JP2007227564A (ja) 2006-02-22 2007-09-06 Fujitsu Ltd 荷電粒子ビーム露光方法及びそれに用いられるプログラム

Also Published As

Publication number Publication date
US20130256519A1 (en) 2013-10-03
JP2013206996A (ja) 2013-10-07
KR20130110034A (ko) 2013-10-08
US8872141B2 (en) 2014-10-28
TWI512409B (zh) 2015-12-11
TW201351055A (zh) 2013-12-16
JP5985852B2 (ja) 2016-09-06
USRE47707E1 (en) 2019-11-05

Similar Documents

Publication Publication Date Title
JP4945380B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
KR101323917B1 (ko) 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법
JP4976071B2 (ja) 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP5199896B2 (ja) 描画方法及び描画装置
KR101453805B1 (ko) 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법
JP6283180B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6285660B2 (ja) 荷電粒子ビーム描画方法、および荷電粒子ビーム描画装置
KR101843056B1 (ko) 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법
JP6057635B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
KR101504530B1 (ko) 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법
JP5616674B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
KR101477557B1 (ko) 하전 입자빔 묘화 장치 및 다중 묘화용의 하전 입자빔의 조사 시간 배분 방법
US7657863B2 (en) Pattern area value calculating method, proximity effect correcting method, and charged particle beam writing method and apparatus
KR101352997B1 (ko) 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법
KR20170029383A (ko) 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법
JP6869695B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6171062B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP5758325B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6546437B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2013115373A (ja) 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20130318

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20140318

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20140926

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20141222

PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20150316

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20150317

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20180220

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20180220

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20190219

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20190219

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20200219

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20200219

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20210219

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20220222

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20230222

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20240220

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20250218

Start annual number: 11

End annual number: 11