TWI508178B - 批量式熱處理裝置 - Google Patents
批量式熱處理裝置 Download PDFInfo
- Publication number
- TWI508178B TWI508178B TW098122760A TW98122760A TWI508178B TW I508178 B TWI508178 B TW I508178B TW 098122760 A TW098122760 A TW 098122760A TW 98122760 A TW98122760 A TW 98122760A TW I508178 B TWI508178 B TW I508178B
- Authority
- TW
- Taiwan
- Prior art keywords
- tube
- heat treatment
- heater
- unit
- substrate
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims description 169
- 239000000758 substrate Substances 0.000 claims description 118
- 238000001816 cooling Methods 0.000 claims description 76
- 239000007789 gas Substances 0.000 claims description 76
- 239000000112 cooling gas Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 18
- 239000000498 cooling water Substances 0.000 description 17
- 230000001681 protective effect Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000003570 air Substances 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- -1 iron-chromium-aluminum Chemical compound 0.000 description 1
- 229910000953 kanthal Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Furnace Details (AREA)
- Photovoltaic Devices (AREA)
- Resistance Heating (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080069330A KR101016058B1 (ko) | 2008-07-16 | 2008-07-16 | 열처리 장치용 히터 |
| KR1020080069331A KR101016061B1 (ko) | 2008-07-16 | 2008-07-16 | 열처리 장치용 히터 |
| KR1020080069329A KR101016048B1 (ko) | 2008-07-16 | 2008-07-16 | 배치식 열처리 장치 |
| KR1020080110813A KR101016064B1 (ko) | 2008-11-10 | 2008-11-10 | 히터 |
| KR1020080110814A KR101009990B1 (ko) | 2008-11-10 | 2008-11-10 | 히터 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201007847A TW201007847A (en) | 2010-02-16 |
| TWI508178B true TWI508178B (zh) | 2015-11-11 |
Family
ID=41550851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098122760A TWI508178B (zh) | 2008-07-16 | 2009-07-06 | 批量式熱處理裝置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (2) | JP5973728B2 (enExample) |
| CN (3) | CN105140157B (enExample) |
| TW (1) | TWI508178B (enExample) |
| WO (1) | WO2010008211A2 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013531363A (ja) * | 2010-04-30 | 2013-08-01 | 株式会社テラセミコン | 基板処理装置 |
| KR101157192B1 (ko) * | 2010-08-31 | 2012-06-20 | 주식회사 테라세미콘 | 배치식 기판 처리 장치 |
| KR101306751B1 (ko) * | 2011-04-29 | 2013-09-10 | 주식회사 테라세미콘 | 기판 지지용 홀더 및 이를 사용한 기판 처리 장치 |
| KR101155813B1 (ko) * | 2011-08-24 | 2012-06-12 | (주)써모니크 | 그라파이트 히터로 |
| KR101435454B1 (ko) * | 2012-04-27 | 2014-08-28 | 주식회사 테라세미콘 | 기판 처리 장치 |
| KR101982724B1 (ko) * | 2012-12-26 | 2019-05-27 | 주식회사 탑 엔지니어링 | 기판 열처리 장치 |
| KR101982725B1 (ko) * | 2012-12-26 | 2019-05-27 | 주식회사 탑 엔지니어링 | 기판 열처리 장치용 발열 조립체 |
| KR101557037B1 (ko) * | 2013-08-14 | 2015-10-02 | (주) 예스티 | 대면적 유리기판 열처리장치 |
| KR101527158B1 (ko) * | 2013-10-24 | 2015-06-09 | 주식회사 테라세미콘 | 배치식 기판처리 장치 |
| KR101479224B1 (ko) | 2013-12-09 | 2015-01-05 | 포스코에너지 주식회사 | 박판형 운모 히터 |
| TWI698944B (zh) * | 2013-12-23 | 2020-07-11 | 南韓商圓益Ips股份有限公司 | 批量式基板處理裝置 |
| KR102117421B1 (ko) * | 2014-05-12 | 2020-06-02 | 주식회사 제우스 | 히터 체결장치 및 이를 이용한 기판 열처리장치 |
| KR101753376B1 (ko) | 2015-08-24 | 2017-07-04 | 주식회사 하이원시스 | 4방향 상부 슬라이딩 도어가 설치된 프리히터 |
| JP2019027623A (ja) * | 2017-07-26 | 2019-02-21 | 株式会社Screenホールディングス | 加熱装置および加熱方法 |
| JP2019029102A (ja) * | 2017-07-26 | 2019-02-21 | 株式会社Screenホールディングス | 加熱装置 |
| JP6826166B2 (ja) * | 2018-08-16 | 2021-02-03 | ウォニク アイピーエス カンパニー リミテッドWonik Ips Co.,Ltd. | 熱処理システム及び熱処理装置 |
| TWI709203B (zh) * | 2018-09-11 | 2020-11-01 | 大陸商北京北方華創微電子裝備有限公司 | 腔室冷卻裝置及半導體加工設備 |
| CN110890262B (zh) * | 2018-09-11 | 2025-05-23 | 北京北方华创微电子装备有限公司 | 腔室冷却装置及半导体加工设备 |
| CN113169109B (zh) * | 2018-11-30 | 2025-07-01 | 朗姆研究公司 | 用于增进热均匀性的具有多层加热器的陶瓷基座 |
| JP7079042B2 (ja) * | 2019-05-31 | 2022-06-01 | 株式会社九州日昌 | 加熱装置および加熱方法 |
| WO2020241490A1 (ja) * | 2019-05-31 | 2020-12-03 | 株式会社九州日昌 | 加熱装置および加熱方法 |
| JP2021197448A (ja) * | 2020-06-15 | 2021-12-27 | 光洋サーモシステム株式会社 | 熱処理装置 |
| KR102559562B1 (ko) * | 2021-03-11 | 2023-07-27 | 주식회사 한국제이텍트써모시스템 | 열처리 오븐의 배기 덕트 일체형 히터 유닛 |
| EP4352780A1 (en) * | 2021-06-09 | 2024-04-17 | Watlow Electric Manufacturing Company | Cold conduit insulation device |
| CN114485170B (zh) * | 2021-12-27 | 2024-04-30 | 江苏邑文微电子科技有限公司 | 快速退火炉加热系统以及温度控制方法 |
| KR102508123B1 (ko) * | 2022-10-28 | 2023-03-10 | (주)삼양세라텍 | 열처리 장치 |
| CN118919461A (zh) * | 2024-10-12 | 2024-11-08 | 苏州芯默科技有限公司 | 一种晶圆退火设备 |
| CN118969680A (zh) * | 2024-10-12 | 2024-11-15 | 苏州芯默科技有限公司 | 一种晶圆退火设备 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012471A (ja) * | 1998-06-25 | 2000-01-14 | Agency Of Ind Science & Technol | プラズマcvd装置並びに太陽電池およびこれを作製するプラズマcvd方法 |
| JP2002175868A (ja) * | 2000-12-06 | 2002-06-21 | Noritake Co Ltd | 遠赤外線薄型ヒータおよび基板加熱炉 |
| JP2006286222A (ja) * | 2005-03-31 | 2006-10-19 | Noritake Co Ltd | 真空加熱炉用プレート型遠赤外線ヒータ |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548400Y2 (enExample) * | 1974-08-15 | 1980-11-12 | ||
| JPS5996691A (ja) * | 1982-11-24 | 1984-06-04 | 東レ株式会社 | 抵抗発熱炉 |
| JPS6162395U (enExample) * | 1984-09-28 | 1986-04-26 | ||
| JPS63137416A (ja) * | 1986-11-29 | 1988-06-09 | Furendotetsuku Kenkyusho:Kk | 真空断熱加熱炉 |
| JPH0641355Y2 (ja) * | 1988-02-16 | 1994-10-26 | 富士電波工業株式会社 | 電気炉用水冷電極 |
| JPH0379985A (ja) * | 1989-08-22 | 1991-04-04 | Deisuko Haitetsuku:Kk | 電気炉の温度制御方法 |
| JPH05290953A (ja) * | 1992-04-10 | 1993-11-05 | Matsushita Electric Ind Co Ltd | 電気加熱装置 |
| KR100203782B1 (ko) * | 1996-09-05 | 1999-06-15 | 윤종용 | 반도체 웨이퍼 열처리장치 |
| JP3058282U (ja) * | 1998-10-07 | 1999-06-18 | 株式会社八光電機製作所 | 冷却機能を有するカートリッジヒーター |
| JP2002221394A (ja) * | 2001-01-24 | 2002-08-09 | Showa Mfg Co Ltd | 電子部品の加熱装置 |
| JP2002289549A (ja) * | 2001-03-28 | 2002-10-04 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| TWI232509B (en) * | 2001-07-25 | 2005-05-11 | Tokyo Electron Ltd | Processing apparatus and processing method |
| JP4262908B2 (ja) * | 2001-08-10 | 2009-05-13 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
| JP3667270B2 (ja) * | 2001-10-12 | 2005-07-06 | 松下電器産業株式会社 | 基板の熱処理方法およびそのための炉設備 |
| JP3575009B2 (ja) * | 2001-12-03 | 2004-10-06 | 坂口電熱株式会社 | 加熱炉用ヒータ端子装置 |
| JP2003194478A (ja) * | 2001-12-26 | 2003-07-09 | Koyo Thermo System Kk | 熱処理装置 |
| KR100498609B1 (ko) * | 2002-05-18 | 2005-07-01 | 주식회사 하이닉스반도체 | 배치형 원자층 증착 장치 |
| JP2005056725A (ja) * | 2003-08-06 | 2005-03-03 | Nikko Materials Co Ltd | MoSi2製発熱体及び同発熱体の製造方法 |
| JP2004179672A (ja) * | 2003-12-12 | 2004-06-24 | Hitachi Kokusai Electric Inc | 基板加熱装置及び半導体回路の形成方法 |
| JP3917994B2 (ja) * | 2004-08-24 | 2007-05-23 | 株式会社石井表記 | 塗布膜用乾燥炉 |
| JP4734885B2 (ja) * | 2004-10-08 | 2011-07-27 | ウシオ電機株式会社 | 加熱ユニット |
| JP2006112762A (ja) * | 2004-10-18 | 2006-04-27 | Tdk Corp | 焼成炉 |
| JP4585441B2 (ja) * | 2005-12-13 | 2010-11-24 | 日本電熱株式会社 | サーモプレート |
| JP2007200798A (ja) * | 2006-01-30 | 2007-08-09 | Matsushita Electric Ind Co Ltd | 発熱構成体、発熱ユニット及び加熱装置 |
| JP2008028305A (ja) * | 2006-07-25 | 2008-02-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| KR100817400B1 (ko) * | 2006-11-09 | 2008-03-27 | 권상환 | 열처리 장치 |
-
2009
- 2009-07-06 TW TW098122760A patent/TWI508178B/zh active
- 2009-07-16 CN CN201510556057.4A patent/CN105140157B/zh active Active
- 2009-07-16 CN CN 201210356983 patent/CN102983091A/zh active Pending
- 2009-07-16 JP JP2011518650A patent/JP5973728B2/ja active Active
- 2009-07-16 WO PCT/KR2009/003909 patent/WO2010008211A2/ko not_active Ceased
- 2009-07-16 CN CN200980122777.2A patent/CN102067294B/zh active Active
-
2014
- 2014-03-06 JP JP2014043704A patent/JP2014146815A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012471A (ja) * | 1998-06-25 | 2000-01-14 | Agency Of Ind Science & Technol | プラズマcvd装置並びに太陽電池およびこれを作製するプラズマcvd方法 |
| JP2002175868A (ja) * | 2000-12-06 | 2002-06-21 | Noritake Co Ltd | 遠赤外線薄型ヒータおよび基板加熱炉 |
| JP2006286222A (ja) * | 2005-03-31 | 2006-10-19 | Noritake Co Ltd | 真空加熱炉用プレート型遠赤外線ヒータ |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5973728B2 (ja) | 2016-08-23 |
| CN102067294A (zh) | 2011-05-18 |
| CN105140157A (zh) | 2015-12-09 |
| JP2011528501A (ja) | 2011-11-17 |
| WO2010008211A3 (ko) | 2010-03-25 |
| CN105140157B (zh) | 2018-05-29 |
| WO2010008211A2 (ko) | 2010-01-21 |
| JP2014146815A (ja) | 2014-08-14 |
| CN102067294B (zh) | 2016-10-19 |
| TW201007847A (en) | 2010-02-16 |
| CN102983091A (zh) | 2013-03-20 |
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