TWI506371B - 光阻組成物、及使用此光阻組成物之圖案形成方法 - Google Patents

光阻組成物、及使用此光阻組成物之圖案形成方法 Download PDF

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Publication number
TWI506371B
TWI506371B TW101105079A TW101105079A TWI506371B TW I506371 B TWI506371 B TW I506371B TW 101105079 A TW101105079 A TW 101105079A TW 101105079 A TW101105079 A TW 101105079A TW I506371 B TWI506371 B TW I506371B
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TW
Taiwan
Prior art keywords
group
acid
substituted
carbon atoms
branched
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TW101105079A
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English (en)
Chinese (zh)
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TW201245880A (en
Inventor
小林知洋
大澤洋一
原田裕次
須賀祐輝
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信越化學工業股份有限公司
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Publication of TW201245880A publication Critical patent/TW201245880A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW101105079A 2011-02-21 2012-02-16 光阻組成物、及使用此光阻組成物之圖案形成方法 TWI506371B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011034748A JP5485198B2 (ja) 2011-02-21 2011-02-21 レジスト組成物及びこれを用いたパターン形成方法

Publications (2)

Publication Number Publication Date
TW201245880A TW201245880A (en) 2012-11-16
TWI506371B true TWI506371B (zh) 2015-11-01

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Family Applications (1)

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TW101105079A TWI506371B (zh) 2011-02-21 2012-02-16 光阻組成物、及使用此光阻組成物之圖案形成方法

Country Status (4)

Country Link
US (1) US20120214100A1 (https=)
JP (1) JP5485198B2 (https=)
KR (1) KR101769165B1 (https=)
TW (1) TWI506371B (https=)

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JP5655855B2 (ja) * 2010-03-31 2015-01-21 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物
JP5993858B2 (ja) * 2011-09-21 2016-09-14 株式会社クラレ （メタ）アクリル酸エステル誘導体、高分子化合物およびフォトレジスト組成物
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
JP5913241B2 (ja) * 2012-09-15 2016-04-27 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 複数の酸発生剤化合物を含むフォトレジスト
JP5828325B2 (ja) * 2013-01-28 2015-12-02 信越化学工業株式会社 パターン形成方法
KR102126894B1 (ko) * 2013-03-11 2020-06-25 주식회사 동진쎄미켐 리소그래피용 레지스트 보호막 형성용 조성물 및 이를 이용한 반도체 소자의 패턴 형성 방법
JP6233240B2 (ja) * 2013-09-26 2017-11-22 信越化学工業株式会社 パターン形成方法
JP6167016B2 (ja) * 2013-10-31 2017-07-19 富士フイルム株式会社 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物
JP6450660B2 (ja) * 2014-08-25 2019-01-09 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US10345700B2 (en) * 2014-09-08 2019-07-09 International Business Machines Corporation Negative-tone resist compositions and multifunctional polymers therein
JP6456176B2 (ja) * 2015-02-10 2019-01-23 東京応化工業株式会社 厚膜用化学増幅型ポジ型感光性樹脂組成物
WO2016136563A1 (ja) 2015-02-27 2016-09-01 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
JP6730128B2 (ja) * 2015-08-20 2020-07-29 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
TWI628159B (zh) * 2015-10-31 2018-07-01 羅門哈斯電子材料有限公司 熱酸產生劑以及光阻劑圖案修整組合物及方法
JP6795948B2 (ja) * 2015-11-16 2020-12-02 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP6485380B2 (ja) * 2016-02-10 2019-03-20 信越化学工業株式会社 単量体、高分子化合物、レジスト材料、及びパターン形成方法
WO2017154600A1 (ja) * 2016-03-09 2017-09-14 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US10649339B2 (en) * 2016-12-13 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Resist material and method for forming semiconductor structure using resist layer
JP6714533B2 (ja) * 2017-03-22 2020-06-24 信越化学工業株式会社 スルホニウム塩、レジスト組成物、及びパターン形成方法
JP6800105B2 (ja) * 2017-07-21 2020-12-16 信越化学工業株式会社 有機膜形成用組成物、パターン形成方法、及び有機膜形成用樹脂
US12350903B2 (en) * 2019-04-23 2025-07-08 The Texas A&M University System Scalable fabrication of wrinkle-free and stress-free metallic and metallic oxide films
JP7810073B2 (ja) * 2021-07-16 2026-02-03 信越化学工業株式会社 ネガ型レジスト材料及びパターン形成方法
JP2023145385A (ja) * 2022-03-28 2023-10-11 信越化学工業株式会社 レジスト組成物及びパターン形成方法

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Also Published As

Publication number Publication date
JP5485198B2 (ja) 2014-05-07
US20120214100A1 (en) 2012-08-23
KR20120095800A (ko) 2012-08-29
JP2012173479A (ja) 2012-09-10
KR101769165B1 (ko) 2017-08-17
TW201245880A (en) 2012-11-16

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