KR101769165B1 - 레지스트 조성물 및 이것을 이용한 패턴 형성 방법 - Google Patents

레지스트 조성물 및 이것을 이용한 패턴 형성 방법 Download PDF

Info

Publication number
KR101769165B1
KR101769165B1 KR1020120016733A KR20120016733A KR101769165B1 KR 101769165 B1 KR101769165 B1 KR 101769165B1 KR 1020120016733 A KR1020120016733 A KR 1020120016733A KR 20120016733 A KR20120016733 A KR 20120016733A KR 101769165 B1 KR101769165 B1 KR 101769165B1
Authority
KR
South Korea
Prior art keywords
group
carbon atoms
substituted
acid
branched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020120016733A
Other languages
English (en)
Korean (ko)
Other versions
KR20120095800A (ko
Inventor
도모히로 고바야시
요우이찌 오사와
유지 하라다
유끼 수까
Original Assignee
신에쓰 가가꾸 고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신에쓰 가가꾸 고교 가부시끼가이샤 filed Critical 신에쓰 가가꾸 고교 가부시끼가이샤
Publication of KR20120095800A publication Critical patent/KR20120095800A/ko
Application granted granted Critical
Publication of KR101769165B1 publication Critical patent/KR101769165B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020120016733A 2011-02-21 2012-02-20 레지스트 조성물 및 이것을 이용한 패턴 형성 방법 Active KR101769165B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-034748 2011-02-21
JP2011034748A JP5485198B2 (ja) 2011-02-21 2011-02-21 レジスト組成物及びこれを用いたパターン形成方法

Publications (2)

Publication Number Publication Date
KR20120095800A KR20120095800A (ko) 2012-08-29
KR101769165B1 true KR101769165B1 (ko) 2017-08-17

Family

ID=46653018

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120016733A Active KR101769165B1 (ko) 2011-02-21 2012-02-20 레지스트 조성물 및 이것을 이용한 패턴 형성 방법

Country Status (4)

Country Link
US (1) US20120214100A1 (https=)
JP (1) JP5485198B2 (https=)
KR (1) KR101769165B1 (https=)
TW (1) TWI506371B (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5655855B2 (ja) * 2010-03-31 2015-01-21 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物
JP5993858B2 (ja) * 2011-09-21 2016-09-14 株式会社クラレ （メタ）アクリル酸エステル誘導体、高分子化合物およびフォトレジスト組成物
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
JP5913241B2 (ja) * 2012-09-15 2016-04-27 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 複数の酸発生剤化合物を含むフォトレジスト
JP5828325B2 (ja) * 2013-01-28 2015-12-02 信越化学工業株式会社 パターン形成方法
KR102126894B1 (ko) * 2013-03-11 2020-06-25 주식회사 동진쎄미켐 리소그래피용 레지스트 보호막 형성용 조성물 및 이를 이용한 반도체 소자의 패턴 형성 방법
JP6233240B2 (ja) * 2013-09-26 2017-11-22 信越化学工業株式会社 パターン形成方法
JP6167016B2 (ja) * 2013-10-31 2017-07-19 富士フイルム株式会社 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物
JP6450660B2 (ja) * 2014-08-25 2019-01-09 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US10345700B2 (en) * 2014-09-08 2019-07-09 International Business Machines Corporation Negative-tone resist compositions and multifunctional polymers therein
JP6456176B2 (ja) * 2015-02-10 2019-01-23 東京応化工業株式会社 厚膜用化学増幅型ポジ型感光性樹脂組成物
WO2016136563A1 (ja) 2015-02-27 2016-09-01 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、感活性光線性又は感放射線性膜を備えたマスクブランクス、パターン形成方法、及び電子デバイスの製造方法
JP6730128B2 (ja) * 2015-08-20 2020-07-29 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
TWI628159B (zh) * 2015-10-31 2018-07-01 羅門哈斯電子材料有限公司 熱酸產生劑以及光阻劑圖案修整組合物及方法
JP6795948B2 (ja) * 2015-11-16 2020-12-02 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP6485380B2 (ja) * 2016-02-10 2019-03-20 信越化学工業株式会社 単量体、高分子化合物、レジスト材料、及びパターン形成方法
WO2017154600A1 (ja) * 2016-03-09 2017-09-14 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US10649339B2 (en) * 2016-12-13 2020-05-12 Taiwan Semiconductor Manufacturing Co., Ltd. Resist material and method for forming semiconductor structure using resist layer
JP6714533B2 (ja) * 2017-03-22 2020-06-24 信越化学工業株式会社 スルホニウム塩、レジスト組成物、及びパターン形成方法
JP6800105B2 (ja) * 2017-07-21 2020-12-16 信越化学工業株式会社 有機膜形成用組成物、パターン形成方法、及び有機膜形成用樹脂
US12350903B2 (en) * 2019-04-23 2025-07-08 The Texas A&M University System Scalable fabrication of wrinkle-free and stress-free metallic and metallic oxide films
JP7810073B2 (ja) * 2021-07-16 2026-02-03 信越化学工業株式会社 ネガ型レジスト材料及びパターン形成方法
JP2023145385A (ja) * 2022-03-28 2023-10-11 信越化学工業株式会社 レジスト組成物及びパターン形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001172251A (ja) * 1999-10-06 2001-06-26 Shin Etsu Chem Co Ltd 新規オニウム塩、光酸発生剤、レジスト材料及びパターン形成方法
JP2010134445A (ja) * 2008-11-10 2010-06-17 Sumitomo Chemical Co Ltd 化学増幅型フォトレジスト組成物

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6416928B1 (en) * 1999-10-06 2002-07-09 Shin-Etsu Chemical Co., Ltd. Onium salts, photoacid generators, resist compositions, and patterning process
US6818379B2 (en) * 2001-12-03 2004-11-16 Sumitomo Chemical Company, Limited Sulfonium salt and use thereof
JP4667945B2 (ja) * 2005-04-20 2011-04-13 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP2009080160A (ja) * 2007-09-25 2009-04-16 Fujifilm Corp 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に於ける化合物
JP5555914B2 (ja) * 2007-10-29 2014-07-23 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP5806800B2 (ja) * 2008-03-28 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP5170456B2 (ja) * 2009-04-16 2013-03-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP5687442B2 (ja) * 2009-06-22 2015-03-18 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 光酸発生剤およびこれを含むフォトレジスト
JP5216032B2 (ja) * 2010-02-02 2013-06-19 信越化学工業株式会社 新規スルホニウム塩、高分子化合物、高分子化合物の製造方法、レジスト材料及びパターン形成方法
TWI530478B (zh) * 2010-02-18 2016-04-21 住友化學股份有限公司 鹽及包含該鹽之光阻組成物
JP5588706B2 (ja) * 2010-03-12 2014-09-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたレジスト膜及びパターン形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001172251A (ja) * 1999-10-06 2001-06-26 Shin Etsu Chem Co Ltd 新規オニウム塩、光酸発生剤、レジスト材料及びパターン形成方法
JP2010134445A (ja) * 2008-11-10 2010-06-17 Sumitomo Chemical Co Ltd 化学増幅型フォトレジスト組成物

Also Published As

Publication number Publication date
JP5485198B2 (ja) 2014-05-07
US20120214100A1 (en) 2012-08-23
KR20120095800A (ko) 2012-08-29
JP2012173479A (ja) 2012-09-10
TWI506371B (zh) 2015-11-01
TW201245880A (en) 2012-11-16

Similar Documents

Publication Publication Date Title
KR101769165B1 (ko) 레지스트 조성물 및 이것을 이용한 패턴 형성 방법
TWI476532B (zh) 正型光阻組成物及圖案形成方法
TWI747201B (zh) 光阻組成物及圖案形成方法
KR101950090B1 (ko) 레지스트 재료 및 패턴 형성 방법
KR102105247B1 (ko) 레지스트 재료 및 패턴 형성 방법
KR101585703B1 (ko) 포지티브형 레지스트 재료 및 패턴 형성 방법
US9519213B2 (en) Patterning process and resist composition
KR101803106B1 (ko) 포지티브형 레지스트 조성물, 패턴 형성 방법
KR101664520B1 (ko) ＡｒＦ 액침 노광용 화학 증폭 포지티브형 레지스트 재료 및 패턴 형성 방법
JP5815575B2 (ja) パターン形成方法
KR101640963B1 (ko) 레지스트 조성물 및 이것을 이용한 패턴 형성 방법
TWI383260B (zh) 浸液曝光用光阻組成物及光阻圖型之形成方法
KR20150122073A (ko) 광 산발생제, 화학 증폭형 레지스트 재료 및 패턴 형성 방법
KR20170087418A (ko) 레지스트 재료 및 패턴 형성 방법
CN102321212A (zh) 聚合物、化学放大正性抗蚀剂组合物和图案形成方法
JP5452102B2 (ja) レジスト組成物及びレジストパターン形成方法
KR101679086B1 (ko) 고분자 화합물, 포지티브형 레지스트 재료 및 패턴 형성 방법
WO2022172689A1 (ja) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
KR20100047046A (ko) 아이-선 화학증폭형 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법
KR20090078898A (ko) 아이-선 화학증폭형 포지티브 레지스트 조성물 및 이를이용한 패턴 형성 방법
KR20100047050A (ko) 아이-선 화학증폭형 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법
KR20100047048A (ko) 아이-선 화학증폭형 포지티브 레지스트 조성물 및 이를 이용한 패턴형성방법
KR20090127600A (ko) 아이-선 화학증폭형 포지티브 레지스트 조성물 및 이를이용한 패턴형성방법
KR20090078899A (ko) 아이-선 화학증폭형 포지티브 포토레지스트 조성물 및 이를이용한 패턴 형성 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20200804

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20210729

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20220715

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 9

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000