TWI500071B - A surface treatment method and apparatus for a die, and a pattern forming method - Google Patents
A surface treatment method and apparatus for a die, and a pattern forming method Download PDFInfo
- Publication number
- TWI500071B TWI500071B TW100104479A TW100104479A TWI500071B TW I500071 B TWI500071 B TW I500071B TW 100104479 A TW100104479 A TW 100104479A TW 100104479 A TW100104479 A TW 100104479A TW I500071 B TWI500071 B TW I500071B
- Authority
- TW
- Taiwan
- Prior art keywords
- die
- surface treatment
- chamber
- coupling agent
- mold
- Prior art date
Links
- 238000004381 surface treatment Methods 0.000 title claims description 62
- 238000000034 method Methods 0.000 title claims description 33
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 42
- 239000007789 gas Substances 0.000 claims description 42
- 239000007822 coupling agent Substances 0.000 claims description 38
- 150000001412 amines Chemical class 0.000 claims description 28
- 238000005859 coupling reaction Methods 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 24
- 238000003860 storage Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 239000003085 diluting agent Substances 0.000 claims description 13
- 239000010419 fine particle Substances 0.000 claims description 12
- 239000005416 organic matter Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000011282 treatment Methods 0.000 claims description 9
- 239000006227 byproduct Substances 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000004380 ashing Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000010954 inorganic particle Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 125000003158 alcohol group Chemical group 0.000 claims description 2
- 239000012298 atmosphere Substances 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 25
- 238000011068 loading method Methods 0.000 description 12
- 230000032258 transport Effects 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002203 pretreatment Methods 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- JQKFLNWRTBPECK-UHFFFAOYSA-N methoxymethane;propane-1,2-diol Chemical compound COC.CC(O)CO JQKFLNWRTBPECK-UHFFFAOYSA-N 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Micromachines (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010081019 | 2010-03-31 | ||
| JP2010280514A JP5693941B2 (ja) | 2010-03-31 | 2010-12-16 | テンプレートの表面処理方法及び装置並びにパターン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201140653A TW201140653A (en) | 2011-11-16 |
| TWI500071B true TWI500071B (zh) | 2015-09-11 |
Family
ID=44697105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100104479A TWI500071B (zh) | 2010-03-31 | 2011-02-10 | A surface treatment method and apparatus for a die, and a pattern forming method |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20110244131A1 (enExample) |
| JP (1) | JP5693941B2 (enExample) |
| KR (1) | KR101226289B1 (enExample) |
| CN (1) | CN102208335B (enExample) |
| TW (1) | TWI500071B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI660401B (zh) * | 2016-09-26 | 2019-05-21 | 日商斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5350424B2 (ja) * | 2011-03-24 | 2013-11-27 | 東京エレクトロン株式会社 | 表面処理方法 |
| JP5898549B2 (ja) * | 2012-03-29 | 2016-04-06 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| CN102866582B (zh) * | 2012-09-29 | 2014-09-10 | 兰红波 | 一种用于高亮度led图形化的纳米压印装置和方法 |
| JP2015149390A (ja) * | 2014-02-06 | 2015-08-20 | キヤノン株式会社 | インプリント装置、型、および物品の製造方法 |
| JP6532419B2 (ja) * | 2015-03-31 | 2019-06-19 | 芝浦メカトロニクス株式会社 | インプリント用のテンプレート製造装置 |
| WO2016159312A1 (ja) * | 2015-03-31 | 2016-10-06 | 芝浦メカトロニクス株式会社 | インプリント用のテンプレート製造装置 |
| JP6486206B2 (ja) * | 2015-03-31 | 2019-03-20 | 芝浦メカトロニクス株式会社 | インプリント用のテンプレート製造装置 |
| WO2016159310A1 (ja) * | 2015-03-31 | 2016-10-06 | 芝浦メカトロニクス株式会社 | インプリント用のテンプレート製造装置 |
| JP6529843B2 (ja) * | 2015-07-14 | 2019-06-12 | 芝浦メカトロニクス株式会社 | インプリント用のテンプレート製造装置及びテンプレート製造方法 |
| JP6441181B2 (ja) | 2015-08-04 | 2018-12-19 | 東芝メモリ株式会社 | インプリント用テンプレートおよびその製造方法、および半導体装置の製造方法 |
| CN109804275B (zh) | 2016-08-26 | 2023-08-25 | 分子印记公司 | 制造单片光子器件的方法、光子器件 |
| CN111526838B (zh) | 2017-11-02 | 2022-03-22 | 奇跃公司 | 制备和分配聚合物材料并从其生产聚合物制品 |
| JP2019220647A (ja) * | 2018-06-22 | 2019-12-26 | 株式会社アルバック | 表面処理方法、プリント配線板の製造方法、および、表面処理装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006041115A1 (ja) * | 2004-10-13 | 2006-04-20 | Central Glass Company, Limited | 含フッ素重合性単量体及びそれを用いた高分子化合物 |
| WO2008069812A1 (en) * | 2006-12-03 | 2008-06-12 | Central Glass Co., Ltd. | Photosensitive polybenzoxazines and methods of making the same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5626820A (en) * | 1988-12-12 | 1997-05-06 | Kinkead; Devon A. | Clean room air filtering |
| US5690749A (en) * | 1996-03-18 | 1997-11-25 | Motorola, Inc. | Method for removing sub-micron particles from a semiconductor wafer surface by exposing the wafer surface to clean room adhesive tape material |
| WO2003021642A2 (en) * | 2001-08-31 | 2003-03-13 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
| JP3892460B2 (ja) | 2002-06-20 | 2007-03-14 | オブデュキャット、アクチボラグ | 成形工具を製造するための方法およびその成形工具を用いて形成された記憶媒体 |
| KR100815372B1 (ko) * | 2005-03-31 | 2008-03-19 | 삼성전기주식회사 | 인쇄회로기판용 임프린트 몰드의 이형처리방법 |
| KR100815081B1 (ko) * | 2006-09-05 | 2008-03-20 | 삼성전기주식회사 | 스탬퍼 이형처리 방법 |
| KR100763349B1 (ko) | 2006-09-14 | 2007-10-04 | 삼성전기주식회사 | 금속 스탬프 제조방법 |
| JP4999069B2 (ja) * | 2007-01-23 | 2012-08-15 | 株式会社日立製作所 | ナノインプリント用スタンパ、ナノインプリント用スタンパの製造方法、およびナノインプリント用スタンパの表面処理剤 |
| WO2009099191A1 (ja) * | 2008-02-07 | 2009-08-13 | Sumitomo Bakelite Company Limited | 半導体用フィルム、半導体装置の製造方法および半導体装置 |
| JP4695679B2 (ja) * | 2008-08-21 | 2011-06-08 | 株式会社東芝 | テンプレートの洗浄方法及びパターン形成方法 |
-
2010
- 2010-12-16 JP JP2010280514A patent/JP5693941B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-10 TW TW100104479A patent/TWI500071B/zh not_active IP Right Cessation
- 2011-03-03 KR KR1020110018954A patent/KR101226289B1/ko not_active Expired - Fee Related
- 2011-03-04 CN CN201110052481.7A patent/CN102208335B/zh not_active Expired - Fee Related
- 2011-03-09 US US13/043,911 patent/US20110244131A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006041115A1 (ja) * | 2004-10-13 | 2006-04-20 | Central Glass Company, Limited | 含フッ素重合性単量体及びそれを用いた高分子化合物 |
| WO2008069812A1 (en) * | 2006-12-03 | 2008-06-12 | Central Glass Co., Ltd. | Photosensitive polybenzoxazines and methods of making the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI660401B (zh) * | 2016-09-26 | 2019-05-21 | 日商斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201140653A (en) | 2011-11-16 |
| JP2011224965A (ja) | 2011-11-10 |
| CN102208335A (zh) | 2011-10-05 |
| JP5693941B2 (ja) | 2015-04-01 |
| KR101226289B1 (ko) | 2013-01-24 |
| US20110244131A1 (en) | 2011-10-06 |
| CN102208335B (zh) | 2013-09-18 |
| KR20110109845A (ko) | 2011-10-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |