TWI499860B - 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法 - Google Patents

光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法 Download PDF

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Publication number
TWI499860B
TWI499860B TW102117253A TW102117253A TWI499860B TW I499860 B TWI499860 B TW I499860B TW 102117253 A TW102117253 A TW 102117253A TW 102117253 A TW102117253 A TW 102117253A TW I499860 B TWI499860 B TW I499860B
Authority
TW
Taiwan
Prior art keywords
pattern
light
film
semi
manufacturing
Prior art date
Application number
TW102117253A
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English (en)
Chinese (zh)
Other versions
TW201400976A (zh
Inventor
山口昇
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201400976A publication Critical patent/TW201400976A/zh
Application granted granted Critical
Publication of TWI499860B publication Critical patent/TWI499860B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW102117253A 2012-06-18 2013-05-15 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法 TWI499860B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012137171A JP6063650B2 (ja) 2012-06-18 2012-06-18 フォトマスクの製造方法

Publications (2)

Publication Number Publication Date
TW201400976A TW201400976A (zh) 2014-01-01
TWI499860B true TWI499860B (zh) 2015-09-11

Family

ID=49896455

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102117253A TWI499860B (zh) 2012-06-18 2013-05-15 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法

Country Status (4)

Country Link
JP (1) JP6063650B2 (https=)
KR (1) KR101443531B1 (https=)
CN (1) CN103513505B (https=)
TW (1) TWI499860B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104460250B (zh) * 2014-04-22 2017-01-04 上海华力微电子有限公司 一种提高光刻工艺窗口的版图处理方法
KR102157644B1 (ko) * 2014-08-13 2020-09-21 (주)에스앤에스텍 다계조 포토 마스크 및 그의 제조 방법
TWI604267B (zh) * 2014-12-17 2017-11-01 Ｈｏｙａ股份有限公司 光罩之製造方法及顯示裝置之製造方法
JP6456748B2 (ja) * 2015-03-28 2019-01-23 Hoya株式会社 フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
CN105093760A (zh) * 2015-09-18 2015-11-25 京东方科技集团股份有限公司 Coa基板及其制备方法、显示装置
JP6586344B2 (ja) * 2015-10-20 2019-10-02 Hoya株式会社 フォトマスクの製造方法、フォトマスク、および、表示装置の製造方法
JP6761255B2 (ja) * 2016-02-15 2020-09-23 関東化学株式会社 エッチング液およびエッチング液により加工されたフォトマスク
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6755733B2 (ja) * 2016-07-14 2020-09-16 キヤノン株式会社 マスク、計測方法、露光方法、及び、物品製造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
KR102227885B1 (ko) * 2020-06-02 2021-03-15 주식회사 기가레인 패턴 정렬 가능한 전사 장치
JP7743282B2 (ja) * 2021-11-10 2025-09-24 株式会社エスケーエレクトロニクス フォトマスクブランクスの製造方法及びフォトマスクの製造方法
TWI911645B (zh) 2023-02-27 2026-01-11 日商Ｓｋ電子股份有限公司 光罩的製造方法及光罩
WO2025009061A1 (ja) * 2023-07-04 2025-01-09 株式会社ニコン マスクおよび露光方法

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US20080153011A1 (en) * 2005-09-06 2008-06-26 Fujitsu Limited Pattern transfer mask, focus variation measuring method and apparatus, and semiconductor device manufacturing method
TW201033729A (en) * 2003-10-24 2010-09-16 Shinetsu Chemical Co Phase shift mask blank, phase shift mask, and pattern transfer method
JP2011013283A (ja) * 2009-06-30 2011-01-20 Ulvac Seimaku Kk 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
TW201215998A (en) * 2010-05-24 2012-04-16 Hoya Corp Method of manufacturing a multi-tone photomask and pattern transfer method
US20120097056A1 (en) * 2010-04-21 2012-04-26 Beijing Boe Optoelectronics Technology Co., Ltd. Transfer printing apparatus for mask pattern and mask pattern preparation method

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JPH1124231A (ja) * 1997-07-01 1999-01-29 Sony Corp ハーフトーン位相シフトマスク、及びその製造方法
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP2006017798A (ja) * 2004-06-30 2006-01-19 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク及びその検査方法
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
EP2738791B1 (en) * 2009-02-16 2015-08-19 Dai Nippon Printing Co., Ltd. Method for correcting a photomask
JP5479074B2 (ja) * 2009-12-21 2014-04-23 Ｈｏｙａ株式会社 光学素子の製造方法、光学素子
JP2012008546A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法

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TW201033729A (en) * 2003-10-24 2010-09-16 Shinetsu Chemical Co Phase shift mask blank, phase shift mask, and pattern transfer method
US20080153011A1 (en) * 2005-09-06 2008-06-26 Fujitsu Limited Pattern transfer mask, focus variation measuring method and apparatus, and semiconductor device manufacturing method
JP2011013283A (ja) * 2009-06-30 2011-01-20 Ulvac Seimaku Kk 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
US20120097056A1 (en) * 2010-04-21 2012-04-26 Beijing Boe Optoelectronics Technology Co., Ltd. Transfer printing apparatus for mask pattern and mask pattern preparation method
TW201215998A (en) * 2010-05-24 2012-04-16 Hoya Corp Method of manufacturing a multi-tone photomask and pattern transfer method

Also Published As

Publication number Publication date
CN103513505A (zh) 2014-01-15
KR101443531B1 (ko) 2014-09-23
KR20130142072A (ko) 2013-12-27
TW201400976A (zh) 2014-01-01
JP6063650B2 (ja) 2017-01-18
JP2014002255A (ja) 2014-01-09
CN105223769A (zh) 2016-01-06
CN103513505B (zh) 2017-05-17

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