KR101443531B1 - 포토 마스크의 제조 방법, 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 - Google Patents

포토 마스크의 제조 방법, 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 Download PDF

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KR101443531B1
KR101443531B1 KR1020130066545A KR20130066545A KR101443531B1 KR 101443531 B1 KR101443531 B1 KR 101443531B1 KR 1020130066545 A KR1020130066545 A KR 1020130066545A KR 20130066545 A KR20130066545 A KR 20130066545A KR 101443531 B1 KR101443531 B1 KR 101443531B1
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South Korea
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pattern
light
photomask
film
resist
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Korean (ko)
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KR20130142072A (ko
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노보루 야마구찌
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020130066545A 2012-06-18 2013-06-11 포토 마스크의 제조 방법, 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 Active KR101443531B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012137171A JP6063650B2 (ja) 2012-06-18 2012-06-18 フォトマスクの製造方法
JPJP-P-2012-137171 2012-06-18

Publications (2)

Publication Number Publication Date
KR20130142072A KR20130142072A (ko) 2013-12-27
KR101443531B1 true KR101443531B1 (ko) 2014-09-23

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KR1020130066545A Active KR101443531B1 (ko) 2012-06-18 2013-06-11 포토 마스크의 제조 방법, 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법

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JP (1) JP6063650B2 (https=)
KR (1) KR101443531B1 (https=)
CN (1) CN103513505B (https=)
TW (1) TWI499860B (https=)

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CN104460250B (zh) * 2014-04-22 2017-01-04 上海华力微电子有限公司 一种提高光刻工艺窗口的版图处理方法
KR102157644B1 (ko) * 2014-08-13 2020-09-21 (주)에스앤에스텍 다계조 포토 마스크 및 그의 제조 방법
TWI604267B (zh) * 2014-12-17 2017-11-01 Ｈｏｙａ股份有限公司 光罩之製造方法及顯示裝置之製造方法
JP6456748B2 (ja) * 2015-03-28 2019-01-23 Hoya株式会社 フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
CN105093760A (zh) * 2015-09-18 2015-11-25 京东方科技集团股份有限公司 Coa基板及其制备方法、显示装置
JP6586344B2 (ja) * 2015-10-20 2019-10-02 Hoya株式会社 フォトマスクの製造方法、フォトマスク、および、表示装置の製造方法
JP6761255B2 (ja) * 2016-02-15 2020-09-23 関東化学株式会社 エッチング液およびエッチング液により加工されたフォトマスク
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6755733B2 (ja) * 2016-07-14 2020-09-16 キヤノン株式会社 マスク、計測方法、露光方法、及び、物品製造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
KR102227885B1 (ko) * 2020-06-02 2021-03-15 주식회사 기가레인 패턴 정렬 가능한 전사 장치
JP7743282B2 (ja) * 2021-11-10 2025-09-24 株式会社エスケーエレクトロニクス フォトマスクブランクスの製造方法及びフォトマスクの製造方法
TWI911645B (zh) 2023-02-27 2026-01-11 日商Ｓｋ電子股份有限公司 光罩的製造方法及光罩
WO2025009061A1 (ja) * 2023-07-04 2025-01-09 株式会社ニコン マスクおよび露光方法

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KR20050002662A (ko) * 2003-06-30 2005-01-10 호야 가부시키가이샤 그레이 톤 마스크의 제조 방법 및 그레이 톤 마스크
KR20110126617A (ko) * 2009-02-16 2011-11-23 다이니폰 인사츠 가부시키가이샤 포토마스크, 포토마스크의 제조 방법 및 수정 방법

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JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP2006017798A (ja) * 2004-06-30 2006-01-19 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク及びその検査方法
KR100926473B1 (ko) * 2005-09-06 2009-11-13 후지쯔 마이크로일렉트로닉스 가부시키가이샤 패턴 전사 마스크, 초점 변동 측정 방법 및 장치, 및반도체 장치의 제조 방법
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
JP5588633B2 (ja) * 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
JP5479074B2 (ja) * 2009-12-21 2014-04-23 Ｈｏｙａ株式会社 光学素子の製造方法、光学素子
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JP2012008546A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP2012008545A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法

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KR20070038493A (ko) * 2003-06-30 2007-04-10 호야 가부시키가이샤 그레이톤 마스크의 제조 방법 및 그레이톤 마스크
KR20110126617A (ko) * 2009-02-16 2011-11-23 다이니폰 인사츠 가부시키가이샤 포토마스크, 포토마스크의 제조 방법 및 수정 방법

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CN103513505A (zh) 2014-01-15
TWI499860B (zh) 2015-09-11
KR20130142072A (ko) 2013-12-27
TW201400976A (zh) 2014-01-01
JP6063650B2 (ja) 2017-01-18
JP2014002255A (ja) 2014-01-09
CN105223769A (zh) 2016-01-06
CN103513505B (zh) 2017-05-17

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