CN103513505B - 光掩模及其制造方法、转印方法及平板显示器的制造方法 - Google Patents

光掩模及其制造方法、转印方法及平板显示器的制造方法 Download PDF

Info

Publication number
CN103513505B
CN103513505B CN201310238262.7A CN201310238262A CN103513505B CN 103513505 B CN103513505 B CN 103513505B CN 201310238262 A CN201310238262 A CN 201310238262A CN 103513505 B CN103513505 B CN 103513505B
Authority
CN
China
Prior art keywords
pattern
light
film
photomask
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310238262.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN103513505A (zh
Inventor
山口昇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to CN201510645264.7A priority Critical patent/CN105223769B/zh
Publication of CN103513505A publication Critical patent/CN103513505A/zh
Application granted granted Critical
Publication of CN103513505B publication Critical patent/CN103513505B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201310238262.7A 2012-06-18 2013-06-17 光掩模及其制造方法、转印方法及平板显示器的制造方法 Active CN103513505B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510645264.7A CN105223769B (zh) 2012-06-18 2013-06-17 光掩模的制造方法、转印方法及平板显示器的制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012137171A JP6063650B2 (ja) 2012-06-18 2012-06-18 フォトマスクの製造方法
JP2012-137171 2012-06-18

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201510645264.7A Division CN105223769B (zh) 2012-06-18 2013-06-17 光掩模的制造方法、转印方法及平板显示器的制造方法

Publications (2)

Publication Number Publication Date
CN103513505A CN103513505A (zh) 2014-01-15
CN103513505B true CN103513505B (zh) 2017-05-17

Family

ID=49896455

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310238262.7A Active CN103513505B (zh) 2012-06-18 2013-06-17 光掩模及其制造方法、转印方法及平板显示器的制造方法

Country Status (4)

Country Link
JP (1) JP6063650B2 (https=)
KR (1) KR101443531B1 (https=)
CN (1) CN103513505B (https=)
TW (1) TWI499860B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104460250B (zh) * 2014-04-22 2017-01-04 上海华力微电子有限公司 一种提高光刻工艺窗口的版图处理方法
KR102157644B1 (ko) * 2014-08-13 2020-09-21 (주)에스앤에스텍 다계조 포토 마스크 및 그의 제조 방법
TWI604267B (zh) * 2014-12-17 2017-11-01 Ｈｏｙａ股份有限公司 光罩之製造方法及顯示裝置之製造方法
JP6456748B2 (ja) * 2015-03-28 2019-01-23 Hoya株式会社 フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
CN105093760A (zh) * 2015-09-18 2015-11-25 京东方科技集团股份有限公司 Coa基板及其制备方法、显示装置
JP6586344B2 (ja) * 2015-10-20 2019-10-02 Hoya株式会社 フォトマスクの製造方法、フォトマスク、および、表示装置の製造方法
JP6761255B2 (ja) * 2016-02-15 2020-09-23 関東化学株式会社 エッチング液およびエッチング液により加工されたフォトマスク
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6755733B2 (ja) * 2016-07-14 2020-09-16 キヤノン株式会社 マスク、計測方法、露光方法、及び、物品製造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
KR102227885B1 (ko) * 2020-06-02 2021-03-15 주식회사 기가레인 패턴 정렬 가능한 전사 장치
JP7743282B2 (ja) * 2021-11-10 2025-09-24 株式会社エスケーエレクトロニクス フォトマスクブランクスの製造方法及びフォトマスクの製造方法
TWI911645B (zh) 2023-02-27 2026-01-11 日商Ｓｋ電子股份有限公司 光罩的製造方法及光罩
WO2025009061A1 (ja) * 2023-07-04 2025-01-09 株式会社ニコン マスクおよび露光方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101359168A (zh) * 2007-07-30 2009-02-04 Hoya株式会社 灰色调掩模的制造方法以及灰色调掩模
CN101937170A (zh) * 2009-06-30 2011-01-05 爱发科成膜株式会社 相移掩膜的制造方法、平板显示器的制造方法和相移掩膜
US20110151383A1 (en) * 2009-12-21 2011-06-23 Hoya Corporation Method of manufacturing optical element, and optical element
CN102262354A (zh) * 2010-05-24 2011-11-30 Hoya株式会社 多色调光掩模的制造方法和图案转印方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1124231A (ja) * 1997-07-01 1999-01-29 Sony Corp ハーフトーン位相シフトマスク、及びその製造方法
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP2006017798A (ja) * 2004-06-30 2006-01-19 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク及びその検査方法
KR100926473B1 (ko) * 2005-09-06 2009-11-13 후지쯔 마이크로일렉트로닉스 가부시키가이샤 패턴 전사 마스크, 초점 변동 측정 방법 및 장치, 및반도체 장치의 제조 방법
EP2738791B1 (en) * 2009-02-16 2015-08-19 Dai Nippon Printing Co., Ltd. Method for correcting a photomask
CN102233743B (zh) * 2010-04-21 2013-11-13 北京京东方光电科技有限公司 掩膜图形转印装置和制备掩膜图形的方法
JP2012008545A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101359168A (zh) * 2007-07-30 2009-02-04 Hoya株式会社 灰色调掩模的制造方法以及灰色调掩模
CN101937170A (zh) * 2009-06-30 2011-01-05 爱发科成膜株式会社 相移掩膜的制造方法、平板显示器的制造方法和相移掩膜
US20110151383A1 (en) * 2009-12-21 2011-06-23 Hoya Corporation Method of manufacturing optical element, and optical element
CN102262354A (zh) * 2010-05-24 2011-11-30 Hoya株式会社 多色调光掩模的制造方法和图案转印方法

Also Published As

Publication number Publication date
CN103513505A (zh) 2014-01-15
KR101443531B1 (ko) 2014-09-23
TWI499860B (zh) 2015-09-11
KR20130142072A (ko) 2013-12-27
TW201400976A (zh) 2014-01-01
JP6063650B2 (ja) 2017-01-18
JP2014002255A (ja) 2014-01-09
CN105223769A (zh) 2016-01-06

Similar Documents

Publication Publication Date Title
CN103513505B (zh) 光掩模及其制造方法、转印方法及平板显示器的制造方法
TWI468853B (zh) 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法
JP2014002255A5 (https=)
TWI550336B (zh) 平面顯示器製造用光罩、圖案轉印方法及平面顯示器之製造方法
KR100609678B1 (ko) 그레이톤 마스크 및 그 제조방법
CN105892226B (zh) 电子器件、光掩模和显示装置的制造方法
CN107402496A (zh) 光掩模的制造方法、光掩模及显示装置的制造方法
JP2006030319A (ja) グレートーンマスク及びグレートーンマスクの製造方法
JP2015102608A (ja) フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP2014081409A5 (https=)
JP4693451B2 (ja) グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
CN100432809C (zh) 灰色调掩模和灰色调掩模的制造方法
TWI777402B (zh) 顯示裝置製造用光罩、及顯示裝置之製造方法
KR20150062980A (ko) 포토마스크의 제조 방법, 패턴 전사 방법 및 표시 장치의 제조 방법
KR101751605B1 (ko) 포토마스크의 제조 방법, 포토마스크 및 표시 장치의 제조 방법
JP2007279710A (ja) パターン形成方法及びグレートーンマスクの製造方法
JP2017072842A (ja) フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP2017068281A (ja) フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP2009229893A (ja) 多階調フォトマスクの製造方法及びパターン転写方法
JP5993386B2 (ja) フォトマスク及びフラットパネルディスプレイの製造方法
JP6744955B2 (ja) フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
TW201823855A (zh) 光罩之製造方法、光罩、及顯示裝置之製造方法
JP2007248943A (ja) パターン形成方法及びグレートーンマスクの製造方法
CN105223769B (zh) 光掩模的制造方法、转印方法及平板显示器的制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant