JP6063650B2 - フォトマスクの製造方法 - Google Patents

フォトマスクの製造方法 Download PDF

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Publication number
JP6063650B2
JP6063650B2 JP2012137171A JP2012137171A JP6063650B2 JP 6063650 B2 JP6063650 B2 JP 6063650B2 JP 2012137171 A JP2012137171 A JP 2012137171A JP 2012137171 A JP2012137171 A JP 2012137171A JP 6063650 B2 JP6063650 B2 JP 6063650B2
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JP
Japan
Prior art keywords
pattern
film
resist
semi
photomask
Prior art date
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Active
Application number
JP2012137171A
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English (en)
Japanese (ja)
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JP2014002255A (ja
JP2014002255A5 (https=
Inventor
山口　昇
昇 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2012137171A priority Critical patent/JP6063650B2/ja
Priority to TW102117253A priority patent/TWI499860B/zh
Priority to KR1020130066545A priority patent/KR101443531B1/ko
Priority to CN201510645264.7A priority patent/CN105223769B/zh
Priority to CN201310238262.7A priority patent/CN103513505B/zh
Publication of JP2014002255A publication Critical patent/JP2014002255A/ja
Publication of JP2014002255A5 publication Critical patent/JP2014002255A5/ja
Application granted granted Critical
Publication of JP6063650B2 publication Critical patent/JP6063650B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012137171A 2012-06-18 2012-06-18 フォトマスクの製造方法 Active JP6063650B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012137171A JP6063650B2 (ja) 2012-06-18 2012-06-18 フォトマスクの製造方法
TW102117253A TWI499860B (zh) 2012-06-18 2013-05-15 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法
KR1020130066545A KR101443531B1 (ko) 2012-06-18 2013-06-11 포토 마스크의 제조 방법, 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법
CN201510645264.7A CN105223769B (zh) 2012-06-18 2013-06-17 光掩模的制造方法、转印方法及平板显示器的制造方法
CN201310238262.7A CN103513505B (zh) 2012-06-18 2013-06-17 光掩模及其制造方法、转印方法及平板显示器的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012137171A JP6063650B2 (ja) 2012-06-18 2012-06-18 フォトマスクの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2016219117A Division JP2017072842A (ja) 2016-11-09 2016-11-09 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法

Publications (3)

Publication Number Publication Date
JP2014002255A JP2014002255A (ja) 2014-01-09
JP2014002255A5 JP2014002255A5 (https=) 2015-01-15
JP6063650B2 true JP6063650B2 (ja) 2017-01-18

Family

ID=49896455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012137171A Active JP6063650B2 (ja) 2012-06-18 2012-06-18 フォトマスクの製造方法

Country Status (4)

Country Link
JP (1) JP6063650B2 (https=)
KR (1) KR101443531B1 (https=)
CN (1) CN103513505B (https=)
TW (1) TWI499860B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI784550B (zh) * 2020-06-02 2022-11-21 南韓商吉佳藍科技股份有限公司 能夠對準圖案的轉印裝置、製造圖案基板的方法及記錄介質

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104460250B (zh) * 2014-04-22 2017-01-04 上海华力微电子有限公司 一种提高光刻工艺窗口的版图处理方法
KR102157644B1 (ko) * 2014-08-13 2020-09-21 (주)에스앤에스텍 다계조 포토 마스크 및 그의 제조 방법
TWI604267B (zh) * 2014-12-17 2017-11-01 Ｈｏｙａ股份有限公司 光罩之製造方法及顯示裝置之製造方法
JP6456748B2 (ja) * 2015-03-28 2019-01-23 Hoya株式会社 フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
CN105093760A (zh) * 2015-09-18 2015-11-25 京东方科技集团股份有限公司 Coa基板及其制备方法、显示装置
JP6586344B2 (ja) * 2015-10-20 2019-10-02 Hoya株式会社 フォトマスクの製造方法、フォトマスク、および、表示装置の製造方法
JP6761255B2 (ja) * 2016-02-15 2020-09-23 関東化学株式会社 エッチング液およびエッチング液により加工されたフォトマスク
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6755733B2 (ja) * 2016-07-14 2020-09-16 キヤノン株式会社 マスク、計測方法、露光方法、及び、物品製造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
JP7743282B2 (ja) * 2021-11-10 2025-09-24 株式会社エスケーエレクトロニクス フォトマスクブランクスの製造方法及びフォトマスクの製造方法
TWI911645B (zh) 2023-02-27 2026-01-11 日商Ｓｋ電子股份有限公司 光罩的製造方法及光罩
WO2025009061A1 (ja) * 2023-07-04 2025-01-09 株式会社ニコン マスクおよび露光方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1124231A (ja) * 1997-07-01 1999-01-29 Sony Corp ハーフトーン位相シフトマスク、及びその製造方法
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP2006017798A (ja) * 2004-06-30 2006-01-19 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク及びその検査方法
KR100926473B1 (ko) * 2005-09-06 2009-11-13 후지쯔 마이크로일렉트로닉스 가부시키가이샤 패턴 전사 마스크, 초점 변동 측정 방법 및 장치, 및반도체 장치의 제조 방법
TW200913013A (en) * 2007-07-30 2009-03-16 Hoya Corp Method of manufacturing a gray tone mask, gray tone mask, method of inspecting a gray tone mask, and method of transferring a pattern
EP2738791B1 (en) * 2009-02-16 2015-08-19 Dai Nippon Printing Co., Ltd. Method for correcting a photomask
JP5588633B2 (ja) * 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
JP5479074B2 (ja) * 2009-12-21 2014-04-23 Ｈｏｙａ株式会社 光学素子の製造方法、光学素子
CN102233743B (zh) * 2010-04-21 2013-11-13 北京京东方光电科技有限公司 掩膜图形转印装置和制备掩膜图形的方法
JP2012008546A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP2012008545A (ja) * 2010-05-24 2012-01-12 Hoya Corp 多階調フォトマスクの製造方法、及びパターン転写方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI784550B (zh) * 2020-06-02 2022-11-21 南韓商吉佳藍科技股份有限公司 能夠對準圖案的轉印裝置、製造圖案基板的方法及記錄介質

Also Published As

Publication number Publication date
CN103513505A (zh) 2014-01-15
KR101443531B1 (ko) 2014-09-23
TWI499860B (zh) 2015-09-11
KR20130142072A (ko) 2013-12-27
TW201400976A (zh) 2014-01-01
JP2014002255A (ja) 2014-01-09
CN105223769A (zh) 2016-01-06
CN103513505B (zh) 2017-05-17

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