TWI496265B - 用於靜電放電保護之半導體裝置 - Google Patents

用於靜電放電保護之半導體裝置 Download PDF

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Publication number
TWI496265B
TWI496265B TW099128870A TW99128870A TWI496265B TW I496265 B TWI496265 B TW I496265B TW 099128870 A TW099128870 A TW 099128870A TW 99128870 A TW99128870 A TW 99128870A TW I496265 B TWI496265 B TW I496265B
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TW
Taiwan
Prior art keywords
region
high concentration
well region
semiconductor substrate
conductivity type
Prior art date
Application number
TW099128870A
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English (en)
Chinese (zh)
Other versions
TW201126691A (en
Inventor
加藤伸二郎
Original Assignee
精工電子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 精工電子有限公司 filed Critical 精工電子有限公司
Publication of TW201126691A publication Critical patent/TW201126691A/zh
Application granted granted Critical
Publication of TWI496265B publication Critical patent/TWI496265B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW099128870A 2009-09-17 2010-08-27 用於靜電放電保護之半導體裝置 TWI496265B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009216245A JP2011066246A (ja) 2009-09-17 2009-09-17 静電気保護用半導体装置

Publications (2)

Publication Number Publication Date
TW201126691A TW201126691A (en) 2011-08-01
TWI496265B true TWI496265B (zh) 2015-08-11

Family

ID=43729652

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099128870A TWI496265B (zh) 2009-09-17 2010-08-27 用於靜電放電保護之半導體裝置

Country Status (5)

Country Link
US (1) US8237225B2 (enExample)
JP (1) JP2011066246A (enExample)
KR (1) KR101715943B1 (enExample)
CN (1) CN102024792B (enExample)
TW (1) TWI496265B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8928127B2 (en) * 2010-09-24 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Noise decoupling structure with through-substrate vias
TWI489616B (zh) * 2011-08-26 2015-06-21 Himax Tech Ltd 靜電放電保護元件及其電路
US8866229B1 (en) * 2011-09-26 2014-10-21 Xilinx, Inc. Semiconductor structure for an electrostatic discharge protection circuit
US8921978B2 (en) * 2012-01-10 2014-12-30 Taiwan Semiconductor Manufacturing Co., Ltd. Dual DNW isolation structure for reducing RF noise on high voltage semiconductor devices
US9058853B2 (en) * 2012-08-16 2015-06-16 Xilinx, Inc. Integrated circuit having improved radiation immunity
US9219038B2 (en) * 2013-03-12 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Shielding for through-silicon-via
US9196719B2 (en) 2013-03-14 2015-11-24 Globalfoundries Singapore Pte. Ltd. ESD protection circuit
CN104103621A (zh) * 2013-04-11 2014-10-15 成都方程式电子有限公司 防静电滑动指纹采集模组
US9450044B2 (en) 2014-08-20 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Guard ring structure and method of forming the same
JP6624912B2 (ja) * 2015-02-05 2019-12-25 エイブリック株式会社 半導体装置
CN106449636B (zh) * 2016-10-12 2019-12-10 矽力杰半导体技术(杭州)有限公司 Esd保护器件及其制造方法
JP6673174B2 (ja) 2016-12-12 2020-03-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
CN110060997B (zh) * 2019-04-15 2020-04-17 长江存储科技有限责任公司 一种静电放电保护结构及其制作方法
CN110718586B (zh) * 2019-10-24 2023-05-16 上海擎茂微电子科技有限公司 一种抗闩锁效应的沟槽型绝缘栅晶体管器件
CN115910997B (zh) * 2021-08-06 2025-09-09 长鑫存储技术有限公司 闩锁测试结构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050082618A1 (en) * 2002-11-07 2005-04-21 Yi-Hsun Wu Low capacitance ESD protection device, and integrated circuit including the same
TW200929781A (en) * 2007-12-24 2009-07-01 Princeton Technology Corp ESD protecting circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626882A (en) * 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure
JPH0945853A (ja) * 1995-07-26 1997-02-14 Oki Electric Ind Co Ltd 半導体装置
KR100307554B1 (ko) * 1998-06-30 2001-11-15 박종섭 Esd 소자를 구비하는 반도체장치
JP3141865B2 (ja) * 1998-12-28 2001-03-07 セイコーエプソン株式会社 半導体集積装置
KR100532463B1 (ko) 2003-08-27 2005-12-01 삼성전자주식회사 정전기 보호 소자와 파워 클램프로 구성된 입출력 정전기방전 보호 셀을 구비하는 집적 회로 장치
US7285828B2 (en) * 2005-01-12 2007-10-23 Intersail Americas Inc. Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050082618A1 (en) * 2002-11-07 2005-04-21 Yi-Hsun Wu Low capacitance ESD protection device, and integrated circuit including the same
TW200929781A (en) * 2007-12-24 2009-07-01 Princeton Technology Corp ESD protecting circuit

Also Published As

Publication number Publication date
KR20110030406A (ko) 2011-03-23
US20110062522A1 (en) 2011-03-17
JP2011066246A (ja) 2011-03-31
TW201126691A (en) 2011-08-01
CN102024792B (zh) 2015-06-17
KR101715943B1 (ko) 2017-03-13
US8237225B2 (en) 2012-08-07
CN102024792A (zh) 2011-04-20

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MM4A Annulment or lapse of patent due to non-payment of fees