CN102024792B - 静电保护用半导体装置 - Google Patents

静电保护用半导体装置 Download PDF

Info

Publication number
CN102024792B
CN102024792B CN201010294346.9A CN201010294346A CN102024792B CN 102024792 B CN102024792 B CN 102024792B CN 201010294346 A CN201010294346 A CN 201010294346A CN 102024792 B CN102024792 B CN 102024792B
Authority
CN
China
Prior art keywords
terminal
well region
region
protection
latch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201010294346.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN102024792A (zh
Inventor
加藤伸二郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN102024792A publication Critical patent/CN102024792A/zh
Application granted granted Critical
Publication of CN102024792B publication Critical patent/CN102024792B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201010294346.9A 2009-09-17 2010-09-17 静电保护用半导体装置 Expired - Fee Related CN102024792B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009216245A JP2011066246A (ja) 2009-09-17 2009-09-17 静電気保護用半導体装置
JP2009-216245 2009-09-17

Publications (2)

Publication Number Publication Date
CN102024792A CN102024792A (zh) 2011-04-20
CN102024792B true CN102024792B (zh) 2015-06-17

Family

ID=43729652

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010294346.9A Expired - Fee Related CN102024792B (zh) 2009-09-17 2010-09-17 静电保护用半导体装置

Country Status (5)

Country Link
US (1) US8237225B2 (enExample)
JP (1) JP2011066246A (enExample)
KR (1) KR101715943B1 (enExample)
CN (1) CN102024792B (enExample)
TW (1) TWI496265B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8928127B2 (en) * 2010-09-24 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Noise decoupling structure with through-substrate vias
TWI489616B (zh) * 2011-08-26 2015-06-21 Himax Tech Ltd 靜電放電保護元件及其電路
US8866229B1 (en) * 2011-09-26 2014-10-21 Xilinx, Inc. Semiconductor structure for an electrostatic discharge protection circuit
US8921978B2 (en) * 2012-01-10 2014-12-30 Taiwan Semiconductor Manufacturing Co., Ltd. Dual DNW isolation structure for reducing RF noise on high voltage semiconductor devices
US9058853B2 (en) * 2012-08-16 2015-06-16 Xilinx, Inc. Integrated circuit having improved radiation immunity
US9219038B2 (en) * 2013-03-12 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Shielding for through-silicon-via
US9196719B2 (en) 2013-03-14 2015-11-24 Globalfoundries Singapore Pte. Ltd. ESD protection circuit
CN104103621A (zh) * 2013-04-11 2014-10-15 成都方程式电子有限公司 防静电滑动指纹采集模组
US9450044B2 (en) 2014-08-20 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Guard ring structure and method of forming the same
JP6624912B2 (ja) * 2015-02-05 2019-12-25 エイブリック株式会社 半導体装置
CN106449636B (zh) * 2016-10-12 2019-12-10 矽力杰半导体技术(杭州)有限公司 Esd保护器件及其制造方法
JP6673174B2 (ja) 2016-12-12 2020-03-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
CN110060997B (zh) * 2019-04-15 2020-04-17 长江存储科技有限责任公司 一种静电放电保护结构及其制作方法
CN110718586B (zh) * 2019-10-24 2023-05-16 上海擎茂微电子科技有限公司 一种抗闩锁效应的沟槽型绝缘栅晶体管器件
CN115910997B (zh) * 2021-08-06 2025-09-09 长鑫存储技术有限公司 闩锁测试结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626882A (en) * 1984-07-18 1986-12-02 International Business Machines Corporation Twin diode overvoltage protection structure
JPH0945853A (ja) * 1995-07-26 1997-02-14 Oki Electric Ind Co Ltd 半導体装置
KR100307554B1 (ko) * 1998-06-30 2001-11-15 박종섭 Esd 소자를 구비하는 반도체장치
JP3141865B2 (ja) * 1998-12-28 2001-03-07 セイコーエプソン株式会社 半導体集積装置
US6960811B2 (en) * 2002-11-07 2005-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Low capacitance ESD protection device, and integrated circuit including the same
KR100532463B1 (ko) 2003-08-27 2005-12-01 삼성전자주식회사 정전기 보호 소자와 파워 클램프로 구성된 입출력 정전기방전 보호 셀을 구비하는 집적 회로 장치
US7285828B2 (en) * 2005-01-12 2007-10-23 Intersail Americas Inc. Electrostatic discharge protection device for digital circuits and for applications with input/output bipolar voltage much higher than the core circuit power supply
TW200929781A (en) * 2007-12-24 2009-07-01 Princeton Technology Corp ESD protecting circuit

Also Published As

Publication number Publication date
KR20110030406A (ko) 2011-03-23
US20110062522A1 (en) 2011-03-17
JP2011066246A (ja) 2011-03-31
TW201126691A (en) 2011-08-01
KR101715943B1 (ko) 2017-03-13
US8237225B2 (en) 2012-08-07
CN102024792A (zh) 2011-04-20
TWI496265B (zh) 2015-08-11

Similar Documents

Publication Publication Date Title
CN102024792B (zh) 静电保护用半导体装置
CN102456687B (zh) 半导体esd器件和方法
CN103972230B (zh) 具备esd保护电路的半导体装置
CN108701693A (zh) 用于静电放电(esd)保护的具有抑制环的嵌入式pmos-触发可控硅整流器(scr)
JP6600491B2 (ja) Ｅｓｄ素子を有する半導体装置
JP2006319330A (ja) 静電気放電保護装置
KR20080076403A (ko) 정전기 방전 보호 소자
CN105990334B (zh) 半导体装置及半导体装置的试验方法
US10147716B2 (en) Electrostatic discharge protection apparatus and applications thereof
US7763908B2 (en) Design of silicon-controlled rectifier by considering electrostatic discharge robustness in human-body model and charged-device model devices
CN101226939A (zh) 半导体器件
US8736022B2 (en) Semiconductor device with a diode-type ESD protection circuit
CN100595915C (zh) 用于静电放电保护的防护墙结构
CN103811482B (zh) 静电放电保护电路
US10361186B1 (en) Suppression of parasitic discharge path in an electrical circuit
JP2005223016A (ja) 半導体装置
KR102145169B1 (ko) 반도체 장치
CN100472786C (zh) 半导体集成电路器件
JP2006332144A (ja) 集積回路
JP6775369B2 (ja) 半導体装置
KR100713923B1 (ko) 반도체회로용 정전기 보호소자
JP2010040839A (ja) 保護素子
KR20080003042A (ko) 정전기 방전 보호 소자
Marichal et al. Differences in HBM and MM test results
JP2009016736A (ja) 半導体集積回路

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160323

Address after: Chiba County, Japan

Patentee after: DynaFine Semiconductor Co.,Ltd.

Address before: Chiba, Chiba, Japan

Patentee before: Seiko Instruments Inc.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: ABLIC Inc.

Address before: Chiba County, Japan

Patentee before: DynaFine Semiconductor Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150617