TWI494981B - 改進的微研磨方法 - Google Patents
改進的微研磨方法 Download PDFInfo
- Publication number
- TWI494981B TWI494981B TW102134178A TW102134178A TWI494981B TW I494981 B TWI494981 B TW I494981B TW 102134178 A TW102134178 A TW 102134178A TW 102134178 A TW102134178 A TW 102134178A TW I494981 B TWI494981 B TW I494981B
- Authority
- TW
- Taiwan
- Prior art keywords
- abrasive
- wafer
- grinding
- substrate
- plate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 120
- 230000008569 process Effects 0.000 title description 36
- 239000000758 substrate Substances 0.000 claims description 179
- 238000000227 grinding Methods 0.000 claims description 145
- 229910052594 sapphire Inorganic materials 0.000 claims description 92
- 239000010980 sapphire Substances 0.000 claims description 92
- 239000002245 particle Substances 0.000 claims description 71
- 239000000463 material Substances 0.000 claims description 60
- 238000005498 polishing Methods 0.000 claims description 34
- 239000003082 abrasive agent Substances 0.000 claims description 29
- 239000002002 slurry Substances 0.000 claims description 27
- 230000003746 surface roughness Effects 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 8
- 238000004873 anchoring Methods 0.000 claims description 7
- 239000006061 abrasive grain Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 118
- 239000013078 crystal Substances 0.000 description 19
- 239000002826 coolant Substances 0.000 description 14
- 230000008901 benefit Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 8
- 229910003468 tantalcarbide Inorganic materials 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000001914 filtration Methods 0.000 description 6
- 235000019592 roughness Nutrition 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 235000019587 texture Nutrition 0.000 description 4
- 229910000906 Bronze Inorganic materials 0.000 description 3
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- -1 vitreous Substances 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
- B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
- B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261707528P | 2012-09-28 | 2012-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201413809A TW201413809A (zh) | 2014-04-01 |
| TWI494981B true TWI494981B (zh) | 2015-08-01 |
Family
ID=50385635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102134178A TWI494981B (zh) | 2012-09-28 | 2013-09-23 | 改進的微研磨方法 |
Country Status (8)
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI553723B (zh) * | 2014-05-27 | 2016-10-11 | Crystalwise Technology | Sapphire wafer processing methods and their processing in the process of intermediates |
| CN104015122A (zh) * | 2014-06-18 | 2014-09-03 | 蓝思科技股份有限公司 | 一种蓝宝石面板的双面铜盘研磨工艺 |
| US20170069791A1 (en) * | 2015-09-08 | 2017-03-09 | Epistar Corporation | Light-emitting device and method of manufacturing thereof |
| CN105290904B (zh) * | 2015-10-12 | 2017-08-18 | 中国建筑材料科学研究总院 | 消除光学玻璃亚表面裂纹的方法 |
| JP6323515B2 (ja) * | 2016-08-31 | 2018-05-16 | 株式会社Sumco | 半導体ウェーハのラッピング方法および半導体ウェーハ |
| JP7085323B2 (ja) * | 2017-08-03 | 2022-06-16 | 東洋鋼鈑株式会社 | 研磨用または研削用のキャリアおよびそれを用いた磁気ディスク用アルミ基板の製造方法 |
| JP2019141974A (ja) * | 2018-02-22 | 2019-08-29 | 株式会社ミズホ | 両面ラップ盤とそれを用いた薄肉ファインセラミックスの研削方法 |
| CN109012918B (zh) * | 2018-10-12 | 2024-01-12 | 河南先导机械力化学研究院有限公司 | 行星球磨机 |
| CN111098224B (zh) * | 2018-10-26 | 2022-08-26 | 东莞新科技术研究开发有限公司 | 半导体基板及其表面研磨方法 |
| US11342256B2 (en) | 2019-01-24 | 2022-05-24 | Applied Materials, Inc. | Method of fine redistribution interconnect formation for advanced packaging applications |
| CN110018028B (zh) * | 2019-04-17 | 2023-01-13 | 宸鸿科技(厦门)有限公司 | 一种蓝宝石基材电子组件的金相切片样品制备方法 |
| IT201900006740A1 (it) * | 2019-05-10 | 2020-11-10 | Applied Materials Inc | Procedimenti di strutturazione di substrati |
| IT201900006736A1 (it) | 2019-05-10 | 2020-11-10 | Applied Materials Inc | Procedimenti di fabbricazione di package |
| US11931855B2 (en) | 2019-06-17 | 2024-03-19 | Applied Materials, Inc. | Planarization methods for packaging substrates |
| JP7236970B2 (ja) * | 2019-09-23 | 2023-03-10 | 日本特殊陶業株式会社 | セラミックヒータ及びグロープラグ |
| US11862546B2 (en) | 2019-11-27 | 2024-01-02 | Applied Materials, Inc. | Package core assembly and fabrication methods |
| CN110900342B (zh) * | 2019-11-29 | 2020-12-08 | 上海磐盟电子材料有限公司 | 一种磨片机 |
| US11257790B2 (en) | 2020-03-10 | 2022-02-22 | Applied Materials, Inc. | High connectivity device stacking |
| US11454884B2 (en) | 2020-04-15 | 2022-09-27 | Applied Materials, Inc. | Fluoropolymer stamp fabrication method |
| US11400545B2 (en) | 2020-05-11 | 2022-08-02 | Applied Materials, Inc. | Laser ablation for package fabrication |
| CN111761505B (zh) * | 2020-07-10 | 2021-07-27 | 浙江中晶科技股份有限公司 | 一种硅片双面磨削设备及其生产工艺 |
| US11232951B1 (en) | 2020-07-14 | 2022-01-25 | Applied Materials, Inc. | Method and apparatus for laser drilling blind vias |
| US11676832B2 (en) | 2020-07-24 | 2023-06-13 | Applied Materials, Inc. | Laser ablation system for package fabrication |
| US11521937B2 (en) | 2020-11-16 | 2022-12-06 | Applied Materials, Inc. | Package structures with built-in EMI shielding |
| US11404318B2 (en) | 2020-11-20 | 2022-08-02 | Applied Materials, Inc. | Methods of forming through-silicon vias in substrates for advanced packaging |
| JP7240013B2 (ja) * | 2021-03-19 | 2023-03-15 | 大昌精機株式会社 | 立型研削盤 |
| US11705365B2 (en) | 2021-05-18 | 2023-07-18 | Applied Materials, Inc. | Methods of micro-via formation for advanced packaging |
| US12183684B2 (en) | 2021-10-26 | 2024-12-31 | Applied Materials, Inc. | Semiconductor device packaging methods |
| TW202319172A (zh) * | 2021-11-11 | 2023-05-16 | 日商迪思科股份有限公司 | SiC基板之製造方法 |
| CN115070512B (zh) * | 2022-03-11 | 2024-04-26 | 北京爱瑞思光学仪器有限公司 | 一种锗晶片的双抛工艺、装置及锗晶片 |
| CN114800109A (zh) * | 2022-06-27 | 2022-07-29 | 苏州博宏源机械制造有限公司 | 双面抛光机及其抛光方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100323585A1 (en) * | 2009-06-17 | 2010-12-23 | Siltronic Ag | Method For Chemically Grinding A Semiconductor Wafer On Both Sides |
| US20100330881A1 (en) * | 2009-06-24 | 2010-12-30 | Siltronic Ag | Method For The Double Sided Polishing Of A Semiconductor Wafer |
| US20110244762A1 (en) * | 2010-03-31 | 2011-10-06 | Siltronic Ag | Method for the double-side polishing of a semiconductor wafer |
| US20120071064A1 (en) * | 2009-06-04 | 2012-03-22 | Sumco Corporation | Fixed abrasive-grain processing device, method of fixed abrasive-grain processing, and method for producing semiconductor wafer |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US4593495A (en) * | 1983-11-25 | 1986-06-10 | Toshiba Machine Co., Ltd. | Polishing machine |
| US4974370A (en) * | 1988-12-07 | 1990-12-04 | General Signal Corp. | Lapping and polishing machine |
| DE3929484A1 (de) * | 1989-09-05 | 1991-03-14 | Wacker Chemitronic | Verfahren zum zweiseitigen chemomechanischen polieren von halbleiterscheiben, sowie vorrichtung zu seiner durchfuehrung und dadurch erhaeltliche halbleiterscheiben |
| JPH04261768A (ja) * | 1991-02-18 | 1992-09-17 | Toshiba Corp | 両面ラップ加工装置 |
| JPH0592363A (ja) * | 1991-02-20 | 1993-04-16 | Hitachi Ltd | 基板の両面同時研磨加工方法と加工装置及びそれを用いた磁気デイスク基板の研磨加工方法と磁気デイスクの製造方法並びに磁気デイスク |
| US6099394A (en) * | 1998-02-10 | 2000-08-08 | Rodel Holdings, Inc. | Polishing system having a multi-phase polishing substrate and methods relating thereto |
| US5389579A (en) * | 1993-04-05 | 1995-02-14 | Motorola, Inc. | Method for single sided polishing of a semiconductor wafer |
| US5595529A (en) * | 1994-03-28 | 1997-01-21 | Speedfam Corporation | Dual column abrading machine |
| US5643405A (en) * | 1995-07-31 | 1997-07-01 | Motorola, Inc. | Method for polishing a semiconductor substrate |
| JPH10166259A (ja) * | 1996-12-12 | 1998-06-23 | Okamoto Kosaku Kikai Seisakusho:Kk | サファイア基板研削研磨方法および装置 |
| US5873772A (en) * | 1997-04-10 | 1999-02-23 | Komatsu Electronic Metals Co., Ltd. | Method for polishing the top and bottom of a semiconductor wafer simultaneously |
| JP2984263B1 (ja) * | 1998-10-23 | 1999-11-29 | システム精工株式会社 | 研磨方法および研磨装置 |
| US6746309B2 (en) * | 1999-05-27 | 2004-06-08 | Sanyo Electric Co., Ltd. | Method of fabricating a semiconductor device |
| JP3791302B2 (ja) * | 2000-05-31 | 2006-06-28 | 株式会社Ｓｕｍｃｏ | 両面研磨装置を用いた半導体ウェーハの研磨方法 |
| JP2003145412A (ja) * | 2001-08-27 | 2003-05-20 | Nippon Sheet Glass Co Ltd | 情報記録媒体用ガラス基板の研磨方法及び情報記録媒体用ガラス基板 |
| EP1489649A1 (en) * | 2002-03-28 | 2004-12-22 | Shin-Etsu Handotai Co., Ltd | Double side polishing device for wafer and double side polishing method |
| JP3935757B2 (ja) * | 2002-03-28 | 2007-06-27 | 信越半導体株式会社 | ウエーハの両面研磨装置及び両面研磨方法 |
| JP2004200526A (ja) * | 2002-12-20 | 2004-07-15 | Hitachi Cable Ltd | 半導体ウェハ研削装置及び研削方法 |
| US20040176017A1 (en) * | 2003-02-25 | 2004-09-09 | Aleksander Zelenski | Apparatus and methods for abrading a work piece |
| KR100550491B1 (ko) * | 2003-05-06 | 2006-02-09 | 스미토모덴키고교가부시키가이샤 | 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법 |
| JP4198607B2 (ja) * | 2004-01-13 | 2008-12-17 | Ｈｏｙａ株式会社 | 磁気ディスク用ガラス基板の製造方法及び磁気ディスクの製造方法 |
| DE102004005702A1 (de) * | 2004-02-05 | 2005-09-01 | Siltronic Ag | Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe |
| JP4818613B2 (ja) * | 2005-01-19 | 2011-11-16 | アイオン株式会社 | 両面平面研磨装置 |
| JP4751115B2 (ja) * | 2005-07-19 | 2011-08-17 | 株式会社岡本工作機械製作所 | 角形状基板の両面研削装置および両面研削方法 |
| JP2009289925A (ja) * | 2008-05-28 | 2009-12-10 | Sumco Corp | 半導体ウェーハの研削方法、研削用定盤および研削装置 |
| JP2010264537A (ja) * | 2009-05-14 | 2010-11-25 | Disco Abrasive Syst Ltd | キャリアプレート |
-
2013
- 2013-09-18 RU RU2015114097A patent/RU2015114097A/ru not_active Application Discontinuation
- 2013-09-18 WO PCT/US2013/060442 patent/WO2014052130A1/en active Application Filing
- 2013-09-18 JP JP2015534558A patent/JP6120974B2/ja active Active
- 2013-09-18 KR KR1020157009892A patent/KR20150056633A/ko not_active Ceased
- 2013-09-18 CN CN201380058733.4A patent/CN104813448A/zh active Pending
- 2013-09-18 IN IN3023DEN2015 patent/IN2015DN03023A/en unknown
- 2013-09-18 US US14/030,843 patent/US20140094094A1/en not_active Abandoned
- 2013-09-23 TW TW102134178A patent/TWI494981B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120071064A1 (en) * | 2009-06-04 | 2012-03-22 | Sumco Corporation | Fixed abrasive-grain processing device, method of fixed abrasive-grain processing, and method for producing semiconductor wafer |
| US20100323585A1 (en) * | 2009-06-17 | 2010-12-23 | Siltronic Ag | Method For Chemically Grinding A Semiconductor Wafer On Both Sides |
| US20100330881A1 (en) * | 2009-06-24 | 2010-12-30 | Siltronic Ag | Method For The Double Sided Polishing Of A Semiconductor Wafer |
| US20110244762A1 (en) * | 2010-03-31 | 2011-10-06 | Siltronic Ag | Method for the double-side polishing of a semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6120974B2 (ja) | 2017-04-26 |
| KR20150056633A (ko) | 2015-05-26 |
| TW201413809A (zh) | 2014-04-01 |
| WO2014052130A1 (en) | 2014-04-03 |
| IN2015DN03023A (enrdf_load_stackoverflow) | 2015-10-02 |
| US20140094094A1 (en) | 2014-04-03 |
| JP2015531318A (ja) | 2015-11-02 |
| RU2015114097A (ru) | 2016-11-20 |
| CN104813448A (zh) | 2015-07-29 |
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