TWI490873B - 供電一記憶體之方法及用於一記憶體的動態電壓調整之系統 - Google Patents
供電一記憶體之方法及用於一記憶體的動態電壓調整之系統 Download PDFInfo
- Publication number
- TWI490873B TWI490873B TW097121961A TW97121961A TWI490873B TW I490873 B TWI490873 B TW I490873B TW 097121961 A TW097121961 A TW 097121961A TW 97121961 A TW97121961 A TW 97121961A TW I490873 B TWI490873 B TW I490873B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory
- test
- voltage
- voltage level
- circuit
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 17
- 238000012360 testing method Methods 0.000 claims description 286
- 230000009467 reduction Effects 0.000 description 8
- 230000004044 response Effects 0.000 description 6
- 230000033228 biological regulation Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/777,635 US7616509B2 (en) | 2007-07-13 | 2007-07-13 | Dynamic voltage adjustment for memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200907990A TW200907990A (en) | 2009-02-16 |
| TWI490873B true TWI490873B (zh) | 2015-07-01 |
Family
ID=40252976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097121961A TWI490873B (zh) | 2007-07-13 | 2008-06-12 | 供電一記憶體之方法及用於一記憶體的動態電壓調整之系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7616509B2 (https=) |
| JP (1) | JP5462160B2 (https=) |
| KR (1) | KR101498514B1 (https=) |
| CN (1) | CN101743598B (https=) |
| TW (1) | TWI490873B (https=) |
| WO (1) | WO2009011977A1 (https=) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6724220B1 (en) | 2000-10-26 | 2004-04-20 | Cyress Semiconductor Corporation | Programmable microcontroller architecture (mixed analog/digital) |
| US8103496B1 (en) | 2000-10-26 | 2012-01-24 | Cypress Semicondutor Corporation | Breakpoint control in an in-circuit emulation system |
| US8160864B1 (en) | 2000-10-26 | 2012-04-17 | Cypress Semiconductor Corporation | In-circuit emulator and pod synchronized boot |
| US8176296B2 (en) | 2000-10-26 | 2012-05-08 | Cypress Semiconductor Corporation | Programmable microcontroller architecture |
| US8149048B1 (en) | 2000-10-26 | 2012-04-03 | Cypress Semiconductor Corporation | Apparatus and method for programmable power management in a programmable analog circuit block |
| US7406674B1 (en) | 2001-10-24 | 2008-07-29 | Cypress Semiconductor Corporation | Method and apparatus for generating microcontroller configuration information |
| US8078970B1 (en) | 2001-11-09 | 2011-12-13 | Cypress Semiconductor Corporation | Graphical user interface with user-selectable list-box |
| US8042093B1 (en) | 2001-11-15 | 2011-10-18 | Cypress Semiconductor Corporation | System providing automatic source code generation for personalization and parameterization of user modules |
| US8069405B1 (en) | 2001-11-19 | 2011-11-29 | Cypress Semiconductor Corporation | User interface for efficiently browsing an electronic document using data-driven tabs |
| US6971004B1 (en) | 2001-11-19 | 2005-11-29 | Cypress Semiconductor Corp. | System and method of dynamically reconfiguring a programmable integrated circuit |
| US7844437B1 (en) | 2001-11-19 | 2010-11-30 | Cypress Semiconductor Corporation | System and method for performing next placements and pruning of disallowed placements for programming an integrated circuit |
| US8103497B1 (en) | 2002-03-28 | 2012-01-24 | Cypress Semiconductor Corporation | External interface for event architecture |
| US7295049B1 (en) | 2004-03-25 | 2007-11-13 | Cypress Semiconductor Corporation | Method and circuit for rapid alignment of signals |
| US7332976B1 (en) * | 2005-02-04 | 2008-02-19 | Cypress Semiconductor Corporation | Poly-phase frequency synthesis oscillator |
| US7400183B1 (en) | 2005-05-05 | 2008-07-15 | Cypress Semiconductor Corporation | Voltage controlled oscillator delay cell and method |
| US7652494B2 (en) * | 2005-07-01 | 2010-01-26 | Apple Inc. | Operating an integrated circuit at a minimum supply voltage |
| WO2007063264A1 (en) * | 2005-12-02 | 2007-06-07 | Arm Limited | Data processing system |
| US8067948B2 (en) | 2006-03-27 | 2011-11-29 | Cypress Semiconductor Corporation | Input/output multiplexer bus |
| US8040266B2 (en) * | 2007-04-17 | 2011-10-18 | Cypress Semiconductor Corporation | Programmable sigma-delta analog-to-digital converter |
| US8130025B2 (en) | 2007-04-17 | 2012-03-06 | Cypress Semiconductor Corporation | Numerical band gap |
| US8111577B2 (en) | 2007-04-17 | 2012-02-07 | Cypress Semiconductor Corporation | System comprising a state-monitoring memory element |
| US8026739B2 (en) | 2007-04-17 | 2011-09-27 | Cypress Semiconductor Corporation | System level interconnect with programmable switching |
| US9720805B1 (en) | 2007-04-25 | 2017-08-01 | Cypress Semiconductor Corporation | System and method for controlling a target device |
| US8049569B1 (en) | 2007-09-05 | 2011-11-01 | Cypress Semiconductor Corporation | Circuit and method for improving the accuracy of a crystal-less oscillator having dual-frequency modes |
| US8116151B2 (en) * | 2008-08-11 | 2012-02-14 | Spansion Llc | Multi-level storage algorithm to emphasize disturb conditions |
| US7915910B2 (en) | 2009-01-28 | 2011-03-29 | Apple Inc. | Dynamic voltage and frequency management |
| CN101957397A (zh) * | 2009-07-14 | 2011-01-26 | 鸿富锦精密工业（深圳）有限公司 | 电压自动量测系统及量测方法 |
| US9142262B2 (en) * | 2009-10-23 | 2015-09-22 | Rambus Inc. | Stacked semiconductor device |
| US8717093B2 (en) * | 2010-01-08 | 2014-05-06 | Mindspeed Technologies, Inc. | System on chip power management through package configuration |
| KR20120004017A (ko) | 2010-07-06 | 2012-01-12 | 주식회사 하이닉스반도체 | 동적 전압 조정 모드 판별 장치와 방법 및 이를 이용한 펌핑 전압 감지 장치와 방법 |
| US8909957B2 (en) * | 2010-11-04 | 2014-12-09 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Dynamic voltage adjustment to computer system memory |
| KR101218096B1 (ko) * | 2010-12-17 | 2013-01-03 | 에스케이하이닉스 주식회사 | 반도체 장치의 테스트 방법 및 반도체 장치의 테스트 시스템 |
| EP2673684B1 (en) | 2011-02-08 | 2019-06-05 | NXP USA, Inc. | Integrated circuit device, power management module and method for providing power management |
| US8797813B2 (en) * | 2011-05-17 | 2014-08-05 | Maxlinear, Inc. | Method and apparatus for memory power and/or area reduction |
| KR20150090418A (ko) * | 2014-01-29 | 2015-08-06 | 에스케이하이닉스 주식회사 | 최소 동작 전원을 사용하는 시스템 및 메모리의 전원전압 설정 방법 |
| US9461626B2 (en) * | 2014-07-14 | 2016-10-04 | Qualcomm Incorporated | Dynamic voltage adjustment of an I/O interface signal |
| US9933828B2 (en) | 2014-08-19 | 2018-04-03 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Controlling power consumption of a voltage regulator in a computer system |
| CN105575438B (zh) * | 2014-10-16 | 2020-11-06 | 恩智浦美国有限公司 | 用于测试存储器的方法及装置 |
| US9786356B2 (en) * | 2015-01-30 | 2017-10-10 | Qualcomm Incorporated | Memory device with adaptive voltage scaling based on error information |
| JP2016157383A (ja) * | 2015-02-26 | 2016-09-01 | 富士通株式会社 | 半導体集積回路装置、無線センサーネットワーク端末および半導体集積回路装置のメモリ制御方法 |
| CN105989900B (zh) * | 2015-03-05 | 2019-06-07 | 展讯通信（上海）有限公司 | 片上系统芯片及其嵌入式存储器最低工作电压的测量 |
| US9495000B1 (en) * | 2015-04-30 | 2016-11-15 | Qualcomm Technologies International, Ltd. | Power management of a wireless device |
| US9905277B2 (en) | 2015-06-30 | 2018-02-27 | Industrial Technology Research Institute | Memory controlling method and memory system |
| TWI584304B (zh) * | 2016-05-23 | 2017-05-21 | 大心電子（英屬維京群島）股份有限公司 | 解碼方法、記憶體儲存裝置及記憶體控制電路單元 |
| CN107436820B (zh) * | 2016-05-27 | 2020-07-17 | 深圳大心电子科技有限公司 | 解码方法、存储器存储装置及存储器控制电路单元 |
| US10338670B2 (en) | 2016-06-10 | 2019-07-02 | Microsoft Technology Licensing, Llc | Input voltage reduction for processing devices |
| US10310572B2 (en) | 2016-06-10 | 2019-06-04 | Microsoft Technology Licensing, Llc | Voltage based thermal control of processing device |
| US10209726B2 (en) | 2016-06-10 | 2019-02-19 | Microsoft Technology Licensing, Llc | Secure input voltage adjustment in processing devices |
| US10248186B2 (en) | 2016-06-10 | 2019-04-02 | Microsoft Technology Licensing, Llc | Processor device voltage characterization |
| US10725104B2 (en) * | 2017-12-22 | 2020-07-28 | Sandisk Technologies Llc | Self testing circuit for power optimization |
| US10446254B1 (en) | 2018-05-03 | 2019-10-15 | Western Digital Technologies, Inc. | Method for maximizing power efficiency in memory interface block |
| US10825540B2 (en) | 2018-05-16 | 2020-11-03 | Micron Technology, Inc. | Memory system quality integral analysis and configuration |
| US10535417B2 (en) | 2018-05-16 | 2020-01-14 | Micron Technology, Inc. | Memory system quality margin analysis and configuration |
| CN109375543B (zh) * | 2018-10-31 | 2020-08-11 | 珠海全志科技股份有限公司 | Dvs电压管理装置、系统及方法、存储介质、计算机设备 |
| US11984723B2 (en) * | 2019-06-05 | 2024-05-14 | Mitsubishi Electric Corporation | Multi-mode power supply system |
| CN112382328B (zh) * | 2020-11-06 | 2024-10-11 | 润昇系统测试(深圳)有限公司 | 内存测试装置以及测试电压调整方法 |
| US11598806B2 (en) * | 2021-01-21 | 2023-03-07 | Nanya Technology Corporation | Test apparatus and test method to a memory device |
| US12204442B2 (en) | 2021-04-27 | 2025-01-21 | Micron Technology, Inc. | Dynamic voltage supply for memory circuit |
| US20230079229A1 (en) * | 2021-09-10 | 2023-03-16 | Maxim Integrated Products, Inc. | Power modulation using dynamic voltage and frequency scaling |
| US12340857B2 (en) | 2021-11-02 | 2025-06-24 | Samsung Electronics Co., Ltd. | Electronic device for adjusting driving voltage of volatile memory and method for operating the same |
| US12217815B2 (en) * | 2022-11-16 | 2025-02-04 | Nanya Technology Corporation | Memory testing system and memory testing method |
| US12562198B2 (en) * | 2023-03-20 | 2026-02-24 | Micron Technology, Inc. | Voltage domain based error management |
| WO2024196372A1 (en) * | 2023-03-23 | 2024-09-26 | Siemens Industry Software Inc. | Memory built-in self-test with automated write trim tuning |
| US12272415B2 (en) * | 2023-06-13 | 2025-04-08 | Nanya Technology Corporation | System and method for testing memory device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6282135B1 (en) * | 1999-02-13 | 2001-08-28 | Integrated Device Technology, Inc. | Intializing memory cells within a dynamic memory array prior to performing internal memory operations |
| JP2004005777A (ja) * | 2002-05-30 | 2004-01-08 | Hitachi Ltd | 半導体記憶装置 |
| JP2006114078A (ja) * | 2004-10-12 | 2006-04-27 | Toshiba Corp | 不揮発性半導体記憶装置及びその動作方法 |
| US7079443B2 (en) * | 1998-06-29 | 2006-07-18 | Fujitsu Limited | Semiconductor device |
| US7082068B2 (en) * | 2004-06-03 | 2006-07-25 | Hynix Semiconductor Inc. | Semiconductor memory device and method for adjusting internal voltage thereof |
| US20060259840A1 (en) * | 2005-05-12 | 2006-11-16 | International Business Machines Corporation | Self-test circuitry to determine minimum operating voltage |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3609868B2 (ja) | 1995-05-30 | 2005-01-12 | 株式会社ルネサステクノロジ | スタティック型半導体記憶装置 |
| JPH09153290A (ja) * | 1995-11-30 | 1997-06-10 | Nec Corp | 半導体記憶装置 |
| JP3722334B2 (ja) * | 1998-01-27 | 2005-11-30 | 株式会社日立製作所 | 半導体記憶装置 |
| US6259639B1 (en) * | 2000-02-16 | 2001-07-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device capable of repairing defective parts in a large-scale memory |
| US6327224B1 (en) | 2000-06-16 | 2001-12-04 | International Business Machines Corporation | On-chip method for measuring access time and data-pin spread |
| US6529436B1 (en) | 2001-04-26 | 2003-03-04 | Lsi Logic Corporation | Supply degradation compensation for memory self time circuits |
| US6483754B1 (en) | 2001-05-16 | 2002-11-19 | Lsi Logic Corporation | Self-time scheme to reduce cycle time for memories |
| JP2003007094A (ja) * | 2001-06-19 | 2003-01-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US6630685B1 (en) * | 2002-06-24 | 2003-10-07 | Micron Technology, Inc. | Probe look ahead: testing parts not currently under a probehead |
| US7173875B2 (en) | 2002-11-29 | 2007-02-06 | International Business Machines Corporation | SRAM array with improved cell stability |
| US7333357B2 (en) | 2003-12-11 | 2008-02-19 | Texas Instruments Incorproated | Static random access memory device having reduced leakage current during active mode and a method of operating thereof |
| JP4198644B2 (ja) | 2004-06-21 | 2008-12-17 | 富士通マイクロエレクトロニクス株式会社 | 半導体集積回路 |
| US7409315B2 (en) | 2004-06-28 | 2008-08-05 | Broadcom Corporation | On-board performance monitor and power control system |
| JP2006118995A (ja) * | 2004-10-21 | 2006-05-11 | Oki Electric Ind Co Ltd | 半導体集積回路 |
| EP1953762B1 (en) * | 2007-01-25 | 2013-09-18 | Imec | Memory device with reduced standby power consumption and method for operating same |
| JP2009076169A (ja) * | 2007-09-25 | 2009-04-09 | Fujitsu Microelectronics Ltd | 半導体記憶装置 |
| JP2009176340A (ja) * | 2008-01-22 | 2009-08-06 | Sony Corp | 不揮発性メモリ |
-
2007
- 2007-07-13 US US11/777,635 patent/US7616509B2/en active Active
-
2008
- 2008-05-28 CN CN200880024536.XA patent/CN101743598B/zh active Active
- 2008-05-28 JP JP2010517037A patent/JP5462160B2/ja active Active
- 2008-05-28 WO PCT/US2008/064969 patent/WO2009011977A1/en not_active Ceased
- 2008-05-28 KR KR1020107000648A patent/KR101498514B1/ko active Active
- 2008-06-12 TW TW097121961A patent/TWI490873B/zh active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7079443B2 (en) * | 1998-06-29 | 2006-07-18 | Fujitsu Limited | Semiconductor device |
| US6282135B1 (en) * | 1999-02-13 | 2001-08-28 | Integrated Device Technology, Inc. | Intializing memory cells within a dynamic memory array prior to performing internal memory operations |
| JP2004005777A (ja) * | 2002-05-30 | 2004-01-08 | Hitachi Ltd | 半導体記憶装置 |
| US7082068B2 (en) * | 2004-06-03 | 2006-07-25 | Hynix Semiconductor Inc. | Semiconductor memory device and method for adjusting internal voltage thereof |
| JP2006114078A (ja) * | 2004-10-12 | 2006-04-27 | Toshiba Corp | 不揮発性半導体記憶装置及びその動作方法 |
| US20060259840A1 (en) * | 2005-05-12 | 2006-11-16 | International Business Machines Corporation | Self-test circuitry to determine minimum operating voltage |
| TW200700945A (en) * | 2005-05-12 | 2007-01-01 | Ibm | Self-test circuitry to determine minimum operating voltage |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101743598B (zh) | 2013-07-24 |
| JP5462160B2 (ja) | 2014-04-02 |
| CN101743598A (zh) | 2010-06-16 |
| KR20100047216A (ko) | 2010-05-07 |
| JP2010534896A (ja) | 2010-11-11 |
| WO2009011977A1 (en) | 2009-01-22 |
| TW200907990A (en) | 2009-02-16 |
| US7616509B2 (en) | 2009-11-10 |
| US20090016140A1 (en) | 2009-01-15 |
| KR101498514B1 (ko) | 2015-03-04 |
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