TWI484286B - A mask substrate and a transfer mask, and a method for manufacturing the transfer mask - Google Patents
A mask substrate and a transfer mask, and a method for manufacturing the transfer mask Download PDFInfo
- Publication number
- TWI484286B TWI484286B TW099119990A TW99119990A TWI484286B TW I484286 B TWI484286 B TW I484286B TW 099119990 A TW099119990 A TW 099119990A TW 99119990 A TW99119990 A TW 99119990A TW I484286 B TWI484286 B TW I484286B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- film
- shielding film
- lower layer
- etching
- Prior art date
Links
- 238000012546 transfer Methods 0.000 title claims description 112
- 239000000758 substrate Substances 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 33
- 238000005530 etching Methods 0.000 claims description 190
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 164
- 230000007547 defect Effects 0.000 claims description 101
- 229910052757 nitrogen Inorganic materials 0.000 claims description 96
- 229910052760 oxygen Inorganic materials 0.000 claims description 76
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 69
- 239000001301 oxygen Substances 0.000 claims description 69
- 238000012937 correction Methods 0.000 claims description 68
- 229910052723 transition metal Inorganic materials 0.000 claims description 55
- 150000003624 transition metals Chemical class 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 33
- 229910052731 fluorine Inorganic materials 0.000 claims description 30
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 29
- 239000011737 fluorine Substances 0.000 claims description 29
- 239000000126 substance Substances 0.000 claims description 24
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 21
- 229910052707 ruthenium Inorganic materials 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000012940 design transfer Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 347
- 239000007789 gas Substances 0.000 description 81
- 125000004429 atom Chemical group 0.000 description 80
- 230000003287 optical effect Effects 0.000 description 37
- 229920002120 photoresistant polymer Polymers 0.000 description 31
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 27
- 229910052750 molybdenum Inorganic materials 0.000 description 27
- 239000011733 molybdenum Substances 0.000 description 27
- 238000010894 electron beam technology Methods 0.000 description 26
- 239000000203 mixture Substances 0.000 description 19
- 238000001312 dry etching Methods 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 16
- 229910052786 argon Inorganic materials 0.000 description 15
- 229910052758 niobium Inorganic materials 0.000 description 12
- 239000010955 niobium Substances 0.000 description 12
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 11
- 239000011651 chromium Substances 0.000 description 11
- 229910052804 chromium Inorganic materials 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 8
- 230000002950 deficient Effects 0.000 description 8
- 238000005546 reactive sputtering Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052797 bismuth Inorganic materials 0.000 description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 7
- 229910052746 lanthanum Inorganic materials 0.000 description 7
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000005477 sputtering target Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- -1 hydrazine hydride Chemical compound 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000000475 sunscreen effect Effects 0.000 description 2
- 239000000516 sunscreening agent Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000002087 whitening effect Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910017263 Mo—C Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009145700 | 2009-06-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201109834A TW201109834A (en) | 2011-03-16 |
| TWI484286B true TWI484286B (zh) | 2015-05-11 |
Family
ID=43356488
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099119990A TWI484286B (zh) | 2009-06-18 | 2010-06-18 | A mask substrate and a transfer mask, and a method for manufacturing the transfer mask |
| TW104111694A TW201527869A (zh) | 2009-06-18 | 2010-06-18 | 光罩基底及轉印用光罩、與轉印用光罩之製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104111694A TW201527869A (zh) | 2009-06-18 | 2010-06-18 | 光罩基底及轉印用光罩、與轉印用光罩之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9017902B2 (enExample) |
| JP (3) | JP4847629B2 (enExample) |
| KR (2) | KR101822801B1 (enExample) |
| TW (2) | TWI484286B (enExample) |
| WO (1) | WO2010147172A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4847629B2 (ja) * | 2009-06-18 | 2011-12-28 | Ｈｏｙａ株式会社 | 転写用マスクの製造方法 |
| JP5772185B2 (ja) * | 2011-04-25 | 2015-09-02 | 富士通セミコンダクター株式会社 | パターン欠陥修正方法及びパターン欠陥修正装置 |
| KR101854796B1 (ko) * | 2011-09-15 | 2018-05-09 | 삼성디스플레이 주식회사 | 마스크 제조 방법 |
| JP5541265B2 (ja) * | 2011-11-18 | 2014-07-09 | 信越化学工業株式会社 | エッチングマスク膜の評価方法 |
| JP5541266B2 (ja) * | 2011-11-18 | 2014-07-09 | 信越化学工業株式会社 | パターン形成膜のエッチング条件の評価方法 |
| DE102013203995B4 (de) * | 2013-03-08 | 2020-03-12 | Carl Zeiss Smt Gmbh | Verfahren zum Schützen eines Substrats während einer Bearbeitung mit einem Teilchenstrahl |
| JP6428400B2 (ja) | 2015-03-13 | 2018-11-28 | 信越化学工業株式会社 | マスクブランクス及びその製造方法 |
| US10079150B2 (en) * | 2015-07-23 | 2018-09-18 | Spts Technologies Limited | Method and apparatus for dry gas phase chemically etching a structure |
| TWI720752B (zh) * | 2015-09-30 | 2021-03-01 | 日商Ｈｏｙａ股份有限公司 | 空白遮罩、相位移轉遮罩及半導體元件之製造方法 |
| JP6297766B1 (ja) * | 2016-08-26 | 2018-03-20 | Hoya株式会社 | マスクブランク、転写用マスク及び半導体デバイスの製造方法 |
| WO2019016224A1 (en) | 2017-07-21 | 2019-01-24 | Carl Zeiss Smt Gmbh | METHOD AND APPARATUS FOR REMOVING EXCESS MATERIALS FROM A PHOTOLITHOGRAPHIC MASK |
| SG11202005137VA (en) * | 2017-12-26 | 2020-07-29 | Hoya Corp | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
| JP2019020749A (ja) * | 2018-10-26 | 2019-02-07 | 信越化学工業株式会社 | マスクブランクス及びその製造方法 |
| DE102020208568A1 (de) * | 2020-07-08 | 2022-01-13 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Entfernen eines einzelnen Partikels von einem Substrat |
| KR102444967B1 (ko) * | 2021-04-29 | 2022-09-16 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102465982B1 (ko) | 2021-07-13 | 2022-11-09 | 에스케이씨솔믹스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
| KR102503790B1 (ko) * | 2021-10-07 | 2023-02-23 | 에스케이엔펄스 주식회사 | 블랭크 마스크 및 이를 이용한 포토마스크 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007241065A (ja) * | 2006-03-10 | 2007-09-20 | Shin Etsu Chem Co Ltd | フォトマスクブランク及びフォトマスク |
| JP2007292824A (ja) * | 2006-04-21 | 2007-11-08 | Shin Etsu Chem Co Ltd | フォトマスクブランク |
| TW200844650A (en) * | 2006-12-27 | 2008-11-16 | Asahi Glass Co Ltd | Reflective mask blank for EUV lithography |
| TW200900851A (en) * | 2007-06-28 | 2009-01-01 | S & Amp S Tech Co Ltd | Process method of gray tone blank mask, and photo mask using the same |
| TW200905373A (en) * | 2007-03-30 | 2009-02-01 | Hoya Corp | Photomask blank and photomask |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000010260A (ja) | 1998-06-19 | 2000-01-14 | Seiko Instruments Inc | マスク修正装置の黒欠陥修正方法 |
| US6322672B1 (en) * | 2000-03-10 | 2001-11-27 | Fei Company | Method and apparatus for milling copper interconnects in a charged particle beam system |
| JP2004537758A (ja) | 2001-07-27 | 2004-12-16 | エフ・イ−・アイ・カンパニー | 電子ビーム処理 |
| JP2004273933A (ja) | 2003-03-11 | 2004-09-30 | Seiko Instruments Inc | 金属および金属酸化物の微細加工方法 |
| JP4764214B2 (ja) | 2006-03-10 | 2011-08-31 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスク及びその製造方法 |
| JP4883278B2 (ja) | 2006-03-10 | 2012-02-22 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスクの製造方法 |
| JP5242110B2 (ja) | 2007-09-30 | 2013-07-24 | Ｈｏｙａ株式会社 | フォトマスクブランク、フォトマスク及びその製造方法、並びに半導体装置の製造方法 |
| KR20100069629A (ko) * | 2007-10-22 | 2010-06-24 | 나노마테리얼 레버러토리 코., 엘티디. | 반도체 제조 장치, 반도체 제조 방법 및 전자 기기 |
| JP5530075B2 (ja) | 2008-03-31 | 2014-06-25 | Ｈｏｙａ株式会社 | フォトマスクブランク、フォトマスク及びこれらの製造方法 |
| TWI409580B (zh) | 2008-06-27 | 2013-09-21 | S&S Tech Co Ltd | 空白光罩、光罩及其製造方法 |
| JP2010109164A (ja) * | 2008-10-30 | 2010-05-13 | Toshiba Corp | Ｅｕｖマスクの欠陥修正方法 |
| JP4847629B2 (ja) * | 2009-06-18 | 2011-12-28 | Ｈｏｙａ株式会社 | 転写用マスクの製造方法 |
-
2010
- 2010-06-17 JP JP2011516919A patent/JP4847629B2/ja active Active
- 2010-06-17 KR KR1020177001569A patent/KR101822801B1/ko active Active
- 2010-06-17 US US13/378,739 patent/US9017902B2/en active Active
- 2010-06-17 KR KR1020127001315A patent/KR101699995B1/ko active Active
- 2010-06-17 WO PCT/JP2010/060269 patent/WO2010147172A1/ja not_active Ceased
- 2010-06-18 TW TW099119990A patent/TWI484286B/zh active
- 2010-06-18 TW TW104111694A patent/TW201527869A/zh unknown
-
2011
- 2011-10-13 JP JP2011225682A patent/JP5483122B2/ja active Active
-
2014
- 2014-02-05 JP JP2014020334A patent/JP5704773B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007241065A (ja) * | 2006-03-10 | 2007-09-20 | Shin Etsu Chem Co Ltd | フォトマスクブランク及びフォトマスク |
| JP2007292824A (ja) * | 2006-04-21 | 2007-11-08 | Shin Etsu Chem Co Ltd | フォトマスクブランク |
| TW200844650A (en) * | 2006-12-27 | 2008-11-16 | Asahi Glass Co Ltd | Reflective mask blank for EUV lithography |
| TW200905373A (en) * | 2007-03-30 | 2009-02-01 | Hoya Corp | Photomask blank and photomask |
| TW200900851A (en) * | 2007-06-28 | 2009-01-01 | S & Amp S Tech Co Ltd | Process method of gray tone blank mask, and photo mask using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014098929A (ja) | 2014-05-29 |
| TWI563338B (enExample) | 2016-12-21 |
| JP5704773B2 (ja) | 2015-04-22 |
| WO2010147172A1 (ja) | 2010-12-23 |
| KR20170010900A (ko) | 2017-02-01 |
| KR101699995B1 (ko) | 2017-01-26 |
| TW201109834A (en) | 2011-03-16 |
| JP2012008607A (ja) | 2012-01-12 |
| US9017902B2 (en) | 2015-04-28 |
| JPWO2010147172A1 (ja) | 2012-12-06 |
| KR20120044342A (ko) | 2012-05-07 |
| TW201527869A (zh) | 2015-07-16 |
| KR101822801B1 (ko) | 2018-01-29 |
| JP5483122B2 (ja) | 2014-05-07 |
| US20120100470A1 (en) | 2012-04-26 |
| JP4847629B2 (ja) | 2011-12-28 |
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