SG11202005137VA - Mask blank, phase shift mask, and method of manufacturing semiconductor device - Google Patents
Mask blank, phase shift mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11202005137VA SG11202005137VA SG11202005137VA SG11202005137VA SG11202005137VA SG 11202005137V A SG11202005137V A SG 11202005137VA SG 11202005137V A SG11202005137V A SG 11202005137VA SG 11202005137V A SG11202005137V A SG 11202005137VA SG 11202005137V A SG11202005137V A SG 11202005137VA
- Authority
- SG
- Singapore
- Prior art keywords
- mask
- semiconductor device
- phase shift
- manufacturing semiconductor
- mask blank
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017248999 | 2017-12-26 | ||
| PCT/JP2018/040505 WO2019130802A1 (en) | 2017-12-26 | 2018-10-31 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202005137VA true SG11202005137VA (en) | 2020-07-29 |
Family
ID=67066944
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202005137VA SG11202005137VA (en) | 2017-12-26 | 2018-10-31 | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
| SG10202112473XA SG10202112473XA (en) | 2017-12-26 | 2018-10-31 | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202112473XA SG10202112473XA (en) | 2017-12-26 | 2018-10-31 | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20200379338A1 (en) |
| JP (2) | JP6542497B1 (en) |
| KR (1) | KR20200125586A (en) |
| CN (1) | CN111512226B (en) |
| SG (2) | SG11202005137VA (en) |
| TW (1) | TWI791688B (en) |
| WO (1) | WO2019130802A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116152262B (en) * | 2023-04-24 | 2023-06-23 | 东莞市群安塑胶实业有限公司 | Method for detecting appearance defects of ionic intermediate film |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3286103B2 (en) | 1995-02-15 | 2002-05-27 | 株式会社東芝 | Method and apparatus for manufacturing exposure mask |
| JP2004537758A (en) | 2001-07-27 | 2004-12-16 | エフ・イ−・アイ・カンパニー | Electron beam processing |
| TWI348590B (en) * | 2004-03-31 | 2011-09-11 | Shinetsu Chemical Co | Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method |
| JP2010217514A (en) | 2009-03-17 | 2010-09-30 | Toppan Printing Co Ltd | Method for manufacturing photomask |
| KR101699995B1 (en) * | 2009-06-18 | 2017-01-26 | 호야 가부시키가이샤 | Mask blank, transfer mask, and method for manufacturing transfer masks |
| CN105739233B (en) * | 2010-04-09 | 2019-11-05 | Hoya株式会社 | Phase shift mask blank and its manufacturing method and phase shifting mask |
| JP5286455B1 (en) * | 2012-03-23 | 2013-09-11 | Ｈｏｙａ株式会社 | Mask blank, transfer mask, and manufacturing method thereof |
| JP6005530B2 (en) | 2013-01-15 | 2016-10-12 | Hoya株式会社 | Mask blank, phase shift mask and manufacturing method thereof |
| JP6104852B2 (en) * | 2014-07-14 | 2017-03-29 | Hoya株式会社 | Mask blank manufacturing method, phase shift mask manufacturing method, and semiconductor device manufacturing method |
| JP6612326B2 (en) * | 2015-03-19 | 2019-11-27 | Ｈｏｙａ株式会社 | Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method |
| JP6341129B2 (en) * | 2015-03-31 | 2018-06-13 | 信越化学工業株式会社 | Halftone phase shift mask blank and halftone phase shift mask |
| JP6087401B2 (en) * | 2015-08-14 | 2017-03-01 | Hoya株式会社 | Mask blank, phase shift mask, and semiconductor device manufacturing method |
| JP6295352B2 (en) * | 2017-03-01 | 2018-03-14 | Hoya株式会社 | Mask blank manufacturing method, phase shift mask manufacturing method, and semiconductor device manufacturing method |
| JP6321265B2 (en) * | 2017-05-29 | 2018-05-09 | Hoya株式会社 | Mask blank, phase shift mask, phase shift mask manufacturing method, and semiconductor device manufacturing method |
-
2018
- 2018-10-31 CN CN201880082414.XA patent/CN111512226B/en active Active
- 2018-10-31 US US16/955,002 patent/US20200379338A1/en not_active Abandoned
- 2018-10-31 SG SG11202005137VA patent/SG11202005137VA/en unknown
- 2018-10-31 SG SG10202112473XA patent/SG10202112473XA/en unknown
- 2018-10-31 WO PCT/JP2018/040505 patent/WO2019130802A1/en active Application Filing
- 2018-10-31 JP JP2019510465A patent/JP6542497B1/en active Active
- 2018-10-31 KR KR1020207021047A patent/KR20200125586A/en not_active Application Discontinuation
- 2018-11-26 TW TW107142023A patent/TWI791688B/en active
-
2019
- 2019-06-10 JP JP2019107729A patent/JP7039521B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200125586A (en) | 2020-11-04 |
| TW201932973A (en) | 2019-08-16 |
| CN111512226A (en) | 2020-08-07 |
| CN111512226B (en) | 2023-09-26 |
| SG10202112473XA (en) | 2021-12-30 |
| JP7039521B2 (en) | 2022-03-22 |
| WO2019130802A1 (en) | 2019-07-04 |
| US20200379338A1 (en) | 2020-12-03 |
| TWI791688B (en) | 2023-02-11 |
| JPWO2019130802A1 (en) | 2019-12-26 |
| JP6542497B1 (en) | 2019-07-10 |
| JP2019164381A (en) | 2019-09-26 |
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