JP4847629B2 - 転写用マスクの製造方法 - Google Patents

転写用マスクの製造方法 Download PDF

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Publication number
JP4847629B2
JP4847629B2 JP2011516919A JP2011516919A JP4847629B2 JP 4847629 B2 JP4847629 B2 JP 4847629B2 JP 2011516919 A JP2011516919 A JP 2011516919A JP 2011516919 A JP2011516919 A JP 2011516919A JP 4847629 B2 JP4847629 B2 JP 4847629B2
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Japan
Prior art keywords
film
shielding film
atomic
etching
lower layer
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JP2011516919A
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English (en)
Japanese (ja)
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JPWO2010147172A1 (ja
Inventor
順 野澤
浩之 岩下
雅広 橋本
淳志 小湊
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Hoya Corp
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Hoya Corp
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Priority to JP2011516919A priority Critical patent/JP4847629B2/ja
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Publication of JPWO2010147172A1 publication Critical patent/JPWO2010147172A1/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2011516919A 2009-06-18 2010-06-17 転写用マスクの製造方法 Active JP4847629B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011516919A JP4847629B2 (ja) 2009-06-18 2010-06-17 転写用マスクの製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009145700 2009-06-18
JP2009145700 2009-06-18
JP2011516919A JP4847629B2 (ja) 2009-06-18 2010-06-17 転写用マスクの製造方法
PCT/JP2010/060269 WO2010147172A1 (ja) 2009-06-18 2010-06-17 マスクブランク及び転写用マスク、並びに転写用マスクの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011225682A Division JP5483122B2 (ja) 2009-06-18 2011-10-13 マスクブランク及び転写用マスク、並びに転写用マスクの製造方法

Publications (2)

Publication Number Publication Date
JP4847629B2 true JP4847629B2 (ja) 2011-12-28
JPWO2010147172A1 JPWO2010147172A1 (ja) 2012-12-06

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011516919A Active JP4847629B2 (ja) 2009-06-18 2010-06-17 転写用マスクの製造方法
JP2011225682A Active JP5483122B2 (ja) 2009-06-18 2011-10-13 マスクブランク及び転写用マスク、並びに転写用マスクの製造方法
JP2014020334A Active JP5704773B2 (ja) 2009-06-18 2014-02-05 マスクブランク、転写用マスク及び転写用マスクの製造方法

Family Applications After (2)

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JP2011225682A Active JP5483122B2 (ja) 2009-06-18 2011-10-13 マスクブランク及び転写用マスク、並びに転写用マスクの製造方法
JP2014020334A Active JP5704773B2 (ja) 2009-06-18 2014-02-05 マスクブランク、転写用マスク及び転写用マスクの製造方法

Country Status (5)

Country Link
US (1) US9017902B2 (enExample)
JP (3) JP4847629B2 (enExample)
KR (2) KR101822801B1 (enExample)
TW (2) TWI484286B (enExample)
WO (1) WO2010147172A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4847629B2 (ja) * 2009-06-18 2011-12-28 Ｈｏｙａ株式会社 転写用マスクの製造方法
JP5772185B2 (ja) * 2011-04-25 2015-09-02 富士通セミコンダクター株式会社 パターン欠陥修正方法及びパターン欠陥修正装置
KR101854796B1 (ko) * 2011-09-15 2018-05-09 삼성디스플레이 주식회사 마스크 제조 방법
JP5541265B2 (ja) * 2011-11-18 2014-07-09 信越化学工業株式会社 エッチングマスク膜の評価方法
JP5541266B2 (ja) * 2011-11-18 2014-07-09 信越化学工業株式会社 パターン形成膜のエッチング条件の評価方法
DE102013203995B4 (de) * 2013-03-08 2020-03-12 Carl Zeiss Smt Gmbh Verfahren zum Schützen eines Substrats während einer Bearbeitung mit einem Teilchenstrahl
JP6428400B2 (ja) 2015-03-13 2018-11-28 信越化学工業株式会社 マスクブランクス及びその製造方法
US10079150B2 (en) * 2015-07-23 2018-09-18 Spts Technologies Limited Method and apparatus for dry gas phase chemically etching a structure
TWI720752B (zh) * 2015-09-30 2021-03-01 日商Ｈｏｙａ股份有限公司 空白遮罩、相位移轉遮罩及半導體元件之製造方法
JP6297766B1 (ja) * 2016-08-26 2018-03-20 Hoya株式会社 マスクブランク、転写用マスク及び半導体デバイスの製造方法
WO2019016224A1 (en) 2017-07-21 2019-01-24 Carl Zeiss Smt Gmbh METHOD AND APPARATUS FOR REMOVING EXCESS MATERIALS FROM A PHOTOLITHOGRAPHIC MASK
SG11202005137VA (en) * 2017-12-26 2020-07-29 Hoya Corp Mask blank, phase shift mask, and method of manufacturing semiconductor device
JP2019020749A (ja) * 2018-10-26 2019-02-07 信越化学工業株式会社 マスクブランクス及びその製造方法
DE102020208568A1 (de) * 2020-07-08 2022-01-13 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zum Entfernen eines einzelnen Partikels von einem Substrat
KR102444967B1 (ko) * 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102465982B1 (ko) 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102503790B1 (ko) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007241060A (ja) * 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスクの製造方法
JP2007241065A (ja) * 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2007292824A (ja) * 2006-04-21 2007-11-08 Shin Etsu Chem Co Ltd フォトマスクブランク
JP2009244752A (ja) * 2008-03-31 2009-10-22 Hoya Corp フォトマスクブランク、フォトマスク及びその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000010260A (ja) 1998-06-19 2000-01-14 Seiko Instruments Inc マスク修正装置の黒欠陥修正方法
US6322672B1 (en) * 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
JP2004537758A (ja) 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
JP2004273933A (ja) 2003-03-11 2004-09-30 Seiko Instruments Inc 金属および金属酸化物の微細加工方法
JP4764214B2 (ja) 2006-03-10 2011-08-31 凸版印刷株式会社 ハーフトーン型位相シフトマスク及びその製造方法
WO2008084680A1 (ja) * 2006-12-27 2008-07-17 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク
JP5115953B2 (ja) * 2007-03-30 2013-01-09 Ｈｏｙａ株式会社 フォトマスクブランク及びフォトマスク
KR100850519B1 (ko) * 2007-06-28 2008-08-05 주식회사 에스앤에스텍 그레이톤 블랭크 마스크 및 포토마스크의 제조방법
JP5242110B2 (ja) 2007-09-30 2013-07-24 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びその製造方法、並びに半導体装置の製造方法
KR20100069629A (ko) * 2007-10-22 2010-06-24 나노마테리얼 레버러토리 코., 엘티디. 반도체 제조 장치, 반도체 제조 방법 및 전자 기기
TWI409580B (zh) 2008-06-27 2013-09-21 S&S Tech Co Ltd 空白光罩、光罩及其製造方法
JP2010109164A (ja) * 2008-10-30 2010-05-13 Toshiba Corp Ｅｕｖマスクの欠陥修正方法
JP4847629B2 (ja) * 2009-06-18 2011-12-28 Ｈｏｙａ株式会社 転写用マスクの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007241060A (ja) * 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスクの製造方法
JP2007241065A (ja) * 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2007292824A (ja) * 2006-04-21 2007-11-08 Shin Etsu Chem Co Ltd フォトマスクブランク
JP2009244752A (ja) * 2008-03-31 2009-10-22 Hoya Corp フォトマスクブランク、フォトマスク及びその製造方法

Also Published As

Publication number Publication date
JP2014098929A (ja) 2014-05-29
TWI563338B (enExample) 2016-12-21
JP5704773B2 (ja) 2015-04-22
WO2010147172A1 (ja) 2010-12-23
KR20170010900A (ko) 2017-02-01
KR101699995B1 (ko) 2017-01-26
TW201109834A (en) 2011-03-16
JP2012008607A (ja) 2012-01-12
US9017902B2 (en) 2015-04-28
JPWO2010147172A1 (ja) 2012-12-06
KR20120044342A (ko) 2012-05-07
TW201527869A (zh) 2015-07-16
KR101822801B1 (ko) 2018-01-29
JP5483122B2 (ja) 2014-05-07
US20120100470A1 (en) 2012-04-26
TWI484286B (zh) 2015-05-11

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