TWI481015B - 高密度閘流體隨機存取記憶體裝置及方法 - Google Patents

高密度閘流體隨機存取記憶體裝置及方法 Download PDF

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Publication number
TWI481015B
TWI481015B TW100125334A TW100125334A TWI481015B TW I481015 B TWI481015 B TW I481015B TW 100125334 A TW100125334 A TW 100125334A TW 100125334 A TW100125334 A TW 100125334A TW I481015 B TWI481015 B TW I481015B
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TW
Taiwan
Prior art keywords
type
doped semiconductor
junction
semiconductor substrate
gate
Prior art date
Application number
TW100125334A
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English (en)
Chinese (zh)
Other versions
TW201214679A (en
Inventor
蘇拉Ｊ 瑪修
錢德拉 毛利
Original Assignee
美光科技公司
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Application filed by 美光科技公司 filed Critical 美光科技公司
Publication of TW201214679A publication Critical patent/TW201214679A/zh
Application granted granted Critical
Publication of TWI481015B publication Critical patent/TWI481015B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors

Landscapes

  • Semiconductor Memories (AREA)
  • Thyristors (AREA)
  • Non-Volatile Memory (AREA)
TW100125334A 2010-07-19 2011-07-18 高密度閘流體隨機存取記憶體裝置及方法 TWI481015B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/838,803 US8455919B2 (en) 2010-07-19 2010-07-19 High density thyristor random access memory device and method

Publications (2)

Publication Number Publication Date
TW201214679A TW201214679A (en) 2012-04-01
TWI481015B true TWI481015B (zh) 2015-04-11

Family

ID=45466254

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100125334A TWI481015B (zh) 2010-07-19 2011-07-18 高密度閘流體隨機存取記憶體裝置及方法

Country Status (6)

Country Link
US (2) US8455919B2 (enExample)
JP (1) JP5686896B2 (enExample)
KR (1) KR101875677B1 (enExample)
CN (1) CN103098212B (enExample)
TW (1) TWI481015B (enExample)
WO (1) WO2012012435A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8455919B2 (en) 2010-07-19 2013-06-04 Micron Technology, Inc. High density thyristor random access memory device and method
US8739010B2 (en) * 2010-11-19 2014-05-27 Altera Corporation Memory array with redundant bits and memory element voting circuits
US9510564B2 (en) * 2012-05-22 2016-12-06 Doskocil Manufacturing Company, Inc. Treat dispenser
KR101719944B1 (ko) * 2013-03-04 2017-03-24 신닛테츠스미킨 카부시키카이샤 충격 흡수 부품
WO2015006457A1 (en) * 2013-07-09 2015-01-15 United Technologies Corporation Reinforced plated polymers
TWI572018B (zh) * 2015-10-28 2017-02-21 旺宏電子股份有限公司 記憶體元件及其製作方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090219426A1 (en) * 2008-03-03 2009-09-03 Micron Technology, Inc. Embedded cache memory in image sensors

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7052941B2 (en) * 2003-06-24 2006-05-30 Sang-Yun Lee Method for making a three-dimensional integrated circuit structure
JP2002216482A (ja) * 2000-11-17 2002-08-02 Toshiba Corp 半導体メモリ集積回路
US6906354B2 (en) 2001-06-13 2005-06-14 International Business Machines Corporation T-RAM cell having a buried vertical thyristor and a pseudo-TFT transfer gate and method for fabricating the same
JP2003030980A (ja) * 2001-07-13 2003-01-31 Toshiba Corp 半導体記憶装置
US6686612B1 (en) 2002-10-01 2004-02-03 T-Ram, Inc. Thyristor-based device adapted to inhibit parasitic current
US6953953B1 (en) * 2002-10-01 2005-10-11 T-Ram, Inc. Deep trench isolation for thyristor-based semiconductor device
US6980457B1 (en) 2002-11-06 2005-12-27 T-Ram, Inc. Thyristor-based device having a reduced-resistance contact to a buried emitter region
US7195959B1 (en) * 2004-10-04 2007-03-27 T-Ram Semiconductor, Inc. Thyristor-based semiconductor device and method of fabrication
US7081378B2 (en) 2004-01-05 2006-07-25 Chartered Semiconductor Manufacturing Ltd. Horizontal TRAM and method for the fabrication thereof
US7224002B2 (en) * 2004-05-06 2007-05-29 Micron Technology, Inc. Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
JP4696964B2 (ja) 2005-07-15 2011-06-08 ソニー株式会社 メモリ用の半導体装置
JP2007067133A (ja) * 2005-08-31 2007-03-15 Sony Corp 半導体装置
US7655973B2 (en) * 2005-10-31 2010-02-02 Micron Technology, Inc. Recessed channel negative differential resistance-based memory cell
US20090179262A1 (en) 2008-01-16 2009-07-16 Qimonda Ag Floating Body Memory Cell with a Non-Overlapping Gate Electrode
US8455919B2 (en) 2010-07-19 2013-06-04 Micron Technology, Inc. High density thyristor random access memory device and method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090219426A1 (en) * 2008-03-03 2009-09-03 Micron Technology, Inc. Embedded cache memory in image sensors

Also Published As

Publication number Publication date
CN103098212B (zh) 2014-08-06
US8754443B2 (en) 2014-06-17
US8455919B2 (en) 2013-06-04
JP2013536572A (ja) 2013-09-19
CN103098212A (zh) 2013-05-08
US20120012892A1 (en) 2012-01-19
JP5686896B2 (ja) 2015-03-18
WO2012012435A2 (en) 2012-01-26
KR20130094801A (ko) 2013-08-26
TW201214679A (en) 2012-04-01
KR101875677B1 (ko) 2018-08-02
WO2012012435A3 (en) 2012-04-19
US20130009208A1 (en) 2013-01-10

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