TWI478360B - 光電轉換裝置的製造方法 - Google Patents

光電轉換裝置的製造方法 Download PDF

Info

Publication number
TWI478360B
TWI478360B TW098113493A TW98113493A TWI478360B TW I478360 B TWI478360 B TW I478360B TW 098113493 A TW098113493 A TW 098113493A TW 98113493 A TW98113493 A TW 98113493A TW I478360 B TWI478360 B TW I478360B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
single crystal
photoelectric conversion
conversion device
layer
Prior art date
Application number
TW098113493A
Other languages
English (en)
Chinese (zh)
Other versions
TW201003940A (en
Inventor
加藤翔
鳥海聰志
井坂史人
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201003940A publication Critical patent/TW201003940A/zh
Application granted granted Critical
Publication of TWI478360B publication Critical patent/TWI478360B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/30—Electrical components
    • H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
TW098113493A 2008-04-25 2009-04-23 光電轉換裝置的製造方法 TWI478360B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008114744 2008-04-25

Publications (2)

Publication Number Publication Date
TW201003940A TW201003940A (en) 2010-01-16
TWI478360B true TWI478360B (zh) 2015-03-21

Family

ID=41215408

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098113493A TWI478360B (zh) 2008-04-25 2009-04-23 光電轉換裝置的製造方法

Country Status (5)

Country Link
US (1) US7947523B2 (enExample)
JP (1) JP5286146B2 (enExample)
KR (1) KR101512785B1 (enExample)
CN (1) CN101567408B (enExample)
TW (1) TWI478360B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5496540B2 (ja) * 2008-04-24 2014-05-21 株式会社半導体エネルギー研究所 半導体基板の作製方法
US7943414B2 (en) * 2008-08-01 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP2010103510A (ja) * 2008-09-29 2010-05-06 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
SG162675A1 (en) * 2008-12-15 2010-07-29 Semiconductor Energy Lab Manufacturing method of soi substrate and manufacturing method of semiconductor device
US8466447B2 (en) * 2009-08-06 2013-06-18 Alliance For Sustainable Energy, Llc Back contact to film silicon on metal for photovoltaic cells
JP5663254B2 (ja) * 2010-02-08 2015-02-04 シャープ株式会社 水素製造装置および水素製造方法
JP5755931B2 (ja) 2010-04-28 2015-07-29 株式会社半導体エネルギー研究所 半導体膜の作製方法、電極の作製方法、２次電池の作製方法、および太陽電池の作製方法
JP5894379B2 (ja) * 2010-06-18 2016-03-30 株式会社半導体エネルギー研究所 光電変換装置
JP6010809B2 (ja) * 2010-08-31 2016-10-19 国立大学法人 琉球大学 半導体装置の製造方法
JP5719555B2 (ja) 2010-09-28 2015-05-20 シャープ株式会社 水素製造装置および水素製造方法
US9263611B2 (en) 2011-11-17 2016-02-16 Solar Junction Corporation Method for etching multi-layer epitaxial material
US9142615B2 (en) * 2012-10-10 2015-09-22 Solar Junction Corporation Methods and apparatus for identifying and reducing semiconductor failures
JP6359525B2 (ja) * 2013-04-18 2018-07-18 株式会社東芝 太陽光発電モジュール
CN104319316B (zh) * 2014-10-31 2017-04-05 中国科学院上海微系统与信息技术研究所 高效薄膜晶硅太阳电池及其自主能源芯片集成技术
WO2017163931A1 (ja) * 2016-03-22 2017-09-28 株式会社村田製作所 セラミック電子部品およびセラミック電子部品の製造方法
KR101758347B1 (ko) * 2016-08-01 2017-07-18 주식회사 엘케이엔지니어링 정전 척 및 리페어 방법
US11508820B2 (en) 2019-11-22 2022-11-22 Samsung Electronics Co., Ltd. Single crystal semiconductor structure and method of fabricating the same
KR102903262B1 (ko) * 2019-11-22 2025-12-23 삼성전자주식회사 단결정 반도체 구조체 및 그 제조 방법
JP7347350B2 (ja) * 2020-07-10 2023-09-20 信越半導体株式会社 エピタキシャル成長条件の設定方法及びエピタキシャルウェーハの製造方法
US11955374B2 (en) * 2021-08-29 2024-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming SOI substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI238527B (en) * 2002-08-30 2005-08-21 Sharp Kk Photoelectric conversion apparatus and manufacturing method of same
TWI254450B (en) * 2004-05-06 2006-05-01 Canon Kk Photoelectric conversion device and manufacturing method thereof
US20070125420A1 (en) * 2003-08-06 2007-06-07 Fujikura Ltd. Photoelectric converter and method for manufacturing same
TWI296859B (en) * 2006-01-25 2008-05-11 Neo Solar Power Corp Photovoltaic device, photovoltaic element and substrate and manufacturing method thereof

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0644638B2 (ja) 1982-12-29 1994-06-08 圭弘 濱川 異質単位セル同士のスタック形光起電力素子
US4496788A (en) 1982-12-29 1985-01-29 Osaka Transformer Co., Ltd. Photovoltaic device
JPS59175170A (ja) 1983-03-24 1984-10-03 Yoshihiro Hamakawa タンデム型太陽電池
JP2687393B2 (ja) * 1988-02-23 1997-12-08 セイコーエプソン株式会社 半導体装置の製造方法
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3381443B2 (ja) * 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
JPH1093122A (ja) * 1996-09-10 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> 薄膜太陽電池の製造方法
JP3962465B2 (ja) * 1996-12-18 2007-08-22 キヤノン株式会社 半導体部材の製造方法
JPH1197379A (ja) 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
US6534380B1 (en) 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
JPH11121310A (ja) 1997-10-09 1999-04-30 Denso Corp 半導体基板の製造方法
JPH1140786A (ja) 1997-07-18 1999-02-12 Denso Corp 半導体基板及びその製造方法
JP3358550B2 (ja) 1998-07-07 2002-12-24 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
JP2001085715A (ja) * 1999-09-09 2001-03-30 Canon Inc 半導体層の分離方法および太陽電池の製造方法
JP2004103855A (ja) * 2002-09-10 2004-04-02 Canon Inc 基板及びその製造方法
JP4554180B2 (ja) * 2003-09-17 2010-09-29 ソニー株式会社 薄膜半導体デバイスの製造方法
JP2006310741A (ja) * 2005-03-30 2006-11-09 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
FR2917232B1 (fr) * 2007-06-06 2009-10-09 Soitec Silicon On Insulator Procede de fabrication d'une structure pour epitaxie sans zone d'exclusion.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI238527B (en) * 2002-08-30 2005-08-21 Sharp Kk Photoelectric conversion apparatus and manufacturing method of same
US20070125420A1 (en) * 2003-08-06 2007-06-07 Fujikura Ltd. Photoelectric converter and method for manufacturing same
TWI254450B (en) * 2004-05-06 2006-05-01 Canon Kk Photoelectric conversion device and manufacturing method thereof
TWI296859B (en) * 2006-01-25 2008-05-11 Neo Solar Power Corp Photovoltaic device, photovoltaic element and substrate and manufacturing method thereof

Also Published As

Publication number Publication date
KR101512785B1 (ko) 2015-04-16
JP2009283923A (ja) 2009-12-03
JP5286146B2 (ja) 2013-09-11
KR20090113227A (ko) 2009-10-29
US7947523B2 (en) 2011-05-24
TW201003940A (en) 2010-01-16
CN101567408A (zh) 2009-10-28
CN101567408B (zh) 2013-08-14
US20090269875A1 (en) 2009-10-29

Similar Documents

Publication Publication Date Title
CN101567408B (zh) 光电转换装置的制造方法
CN101447526B (zh) 光电转换装置的制造方法
JP5459901B2 (ja) 光電変換装置モジュールの作製方法
TWI442590B (zh) 光電轉換裝置的製造方法
JP5248994B2 (ja) 光電変換装置の製造方法
JP5352190B2 (ja) 光電変換装置
JP5315008B2 (ja) 光電変換装置
JP5070112B2 (ja) 光起電力装置及び光起電力装置の製造方法
JP5723204B2 (ja) 半導体基板の作製方法
JP5577030B2 (ja) 光電変換装置及びその製造方法
TWI557928B (zh) 光電轉換裝置及其製造方法
JP2008112848A (ja) 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
CN118712280A (zh) 一种柔性太阳能电池及其制作方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees