TWI476829B - 電漿蝕刻裝置 - Google Patents

電漿蝕刻裝置 Download PDF

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Publication number
TWI476829B
TWI476829B TW098143187A TW98143187A TWI476829B TW I476829 B TWI476829 B TW I476829B TW 098143187 A TW098143187 A TW 098143187A TW 98143187 A TW98143187 A TW 98143187A TW I476829 B TWI476829 B TW I476829B
Authority
TW
Taiwan
Prior art keywords
plasma
plasma generating
generating space
substrate
body portion
Prior art date
Application number
TW098143187A
Other languages
English (en)
Chinese (zh)
Other versions
TW201036061A (en
Inventor
山本孝
野沢善幸
Original Assignee
Spp科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spp科技股份有限公司 filed Critical Spp科技股份有限公司
Publication of TW201036061A publication Critical patent/TW201036061A/zh
Application granted granted Critical
Publication of TWI476829B publication Critical patent/TWI476829B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Paper (AREA)
TW098143187A 2009-03-31 2009-12-16 電漿蝕刻裝置 TWI476829B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009084137A JP4977730B2 (ja) 2009-03-31 2009-03-31 プラズマエッチング装置

Publications (2)

Publication Number Publication Date
TW201036061A TW201036061A (en) 2010-10-01
TWI476829B true TWI476829B (zh) 2015-03-11

Family

ID=42827680

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098143187A TWI476829B (zh) 2009-03-31 2009-12-16 電漿蝕刻裝置

Country Status (7)

Country Link
US (1) US20120006490A1 (enExample)
EP (1) EP2416351B1 (enExample)
JP (1) JP4977730B2 (enExample)
KR (1) KR20120009419A (enExample)
CN (1) CN102301457B (enExample)
TW (1) TWI476829B (enExample)
WO (1) WO2010113358A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013028313A1 (en) * 2011-08-19 2013-02-28 Mattson Technology, Inc. High efficiency plasma source
JP5821039B2 (ja) * 2011-11-07 2015-11-24 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
JP5485327B2 (ja) * 2012-04-16 2014-05-07 Ｓｐｐテクノロジーズ株式会社 プラズマ密度調整部材
JP6110865B2 (ja) * 2012-09-27 2017-04-05 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング装置
GB201318249D0 (en) * 2013-10-15 2013-11-27 Spts Technologies Ltd Plasma etching apparatus
DE102014216195A1 (de) * 2014-08-14 2016-02-18 Robert Bosch Gmbh Vorrichtung zum anisotropen Ätzen eines Substrats und Verfahren zum Betreiben einer Vorrichtung zum anisotropen Ätzen eines Substrats
JP6444794B2 (ja) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置
US11201036B2 (en) 2017-06-09 2021-12-14 Beijing E-Town Semiconductor Technology Co., Ltd Plasma strip tool with uniformity control
EP4200891A1 (en) 2020-08-28 2023-06-28 Mattson Technology, Inc. Plasma strip tool with movable insert
WO2024249035A1 (en) * 2023-05-30 2024-12-05 Beijing E-town Semiconductor Technology Co., Ltd. Workpiece processing apparatus and methods for the treatment of workpieces

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007083A (ja) * 1999-06-18 2001-01-12 Sony Corp プラズマ処理装置及び方法
JP2004241437A (ja) * 2003-02-03 2004-08-26 Tokyo Ohka Kogyo Co Ltd プラズマ処理装置
JP2005531125A (ja) * 2001-10-22 2005-10-13 ユナクシス・ユーエスエイ・インコーポレーテッド パルス化プラズマを使用したフォトマスク基板のエッチングのための方法及び装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1162646A3 (en) * 2000-06-06 2004-10-13 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
US20030092278A1 (en) * 2001-11-13 2003-05-15 Fink Steven T. Plasma baffle assembly
JP2004079465A (ja) * 2002-08-22 2004-03-11 Shimadzu Corp プラズマ生成装置およびプラズマ処理装置
GB0323001D0 (en) * 2003-10-01 2003-11-05 Oxford Instr Plasma Technology Apparatus and method for plasma treating a substrate
JP4459877B2 (ja) 2004-08-12 2010-04-28 住友精密工業株式会社 エッチング方法及びエッチング装置
JP4578893B2 (ja) 2004-08-20 2010-11-10 住友精密工業株式会社 シリコン材のプラズマエッチング方法及びプラズマエッチング装置
KR100683174B1 (ko) * 2005-06-17 2007-02-15 삼성전자주식회사 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007083A (ja) * 1999-06-18 2001-01-12 Sony Corp プラズマ処理装置及び方法
JP2005531125A (ja) * 2001-10-22 2005-10-13 ユナクシス・ユーエスエイ・インコーポレーテッド パルス化プラズマを使用したフォトマスク基板のエッチングのための方法及び装置
JP2004241437A (ja) * 2003-02-03 2004-08-26 Tokyo Ohka Kogyo Co Ltd プラズマ処理装置

Also Published As

Publication number Publication date
EP2416351B1 (en) 2019-08-07
KR20120009419A (ko) 2012-01-31
JP2010238847A (ja) 2010-10-21
TW201036061A (en) 2010-10-01
US20120006490A1 (en) 2012-01-12
EP2416351A4 (en) 2015-08-12
EP2416351A1 (en) 2012-02-08
WO2010113358A1 (ja) 2010-10-07
CN102301457A (zh) 2011-12-28
JP4977730B2 (ja) 2012-07-18
CN102301457B (zh) 2013-09-25

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