KR20120009419A - 플라즈마 식각 장치 - Google Patents

플라즈마 식각 장치 Download PDF

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Publication number
KR20120009419A
KR20120009419A KR1020117015433A KR20117015433A KR20120009419A KR 20120009419 A KR20120009419 A KR 20120009419A KR 1020117015433 A KR1020117015433 A KR 1020117015433A KR 20117015433 A KR20117015433 A KR 20117015433A KR 20120009419 A KR20120009419 A KR 20120009419A
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KR
South Korea
Prior art keywords
plasma
space
substrate
state
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117015433A
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English (en)
Korean (ko)
Inventor
타카시 야마모토
요시유키 노자와
Original Assignee
스미토모 세이미츠 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스미토모 세이미츠 고교 가부시키가이샤 filed Critical 스미토모 세이미츠 고교 가부시키가이샤
Publication of KR20120009419A publication Critical patent/KR20120009419A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Paper (AREA)
KR1020117015433A 2009-03-31 2009-12-10 플라즈마 식각 장치 Ceased KR20120009419A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-084137 2009-03-31
JP2009084137A JP4977730B2 (ja) 2009-03-31 2009-03-31 プラズマエッチング装置

Publications (1)

Publication Number Publication Date
KR20120009419A true KR20120009419A (ko) 2012-01-31

Family

ID=42827680

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117015433A Ceased KR20120009419A (ko) 2009-03-31 2009-12-10 플라즈마 식각 장치

Country Status (7)

Country Link
US (1) US20120006490A1 (enExample)
EP (1) EP2416351B1 (enExample)
JP (1) JP4977730B2 (enExample)
KR (1) KR20120009419A (enExample)
CN (1) CN102301457B (enExample)
TW (1) TWI476829B (enExample)
WO (1) WO2010113358A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101659594B1 (ko) * 2011-08-19 2016-09-23 맷슨 테크놀로지, 인크. 고효율 플라즈마 소스
JP5821039B2 (ja) * 2011-11-07 2015-11-24 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
JP5485327B2 (ja) * 2012-04-16 2014-05-07 Ｓｐｐテクノロジーズ株式会社 プラズマ密度調整部材
WO2014050903A1 (ja) 2012-09-27 2014-04-03 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング装置
GB201318249D0 (en) * 2013-10-15 2013-11-27 Spts Technologies Ltd Plasma etching apparatus
DE102014216195A1 (de) * 2014-08-14 2016-02-18 Robert Bosch Gmbh Vorrichtung zum anisotropen Ätzen eines Substrats und Verfahren zum Betreiben einer Vorrichtung zum anisotropen Ätzen eines Substrats
JP6444794B2 (ja) * 2015-03-30 2018-12-26 Ｓｐｐテクノロジーズ株式会社 半導体素子の製造方法及びその製造に用いられるプラズマエッチング装置
US11201036B2 (en) 2017-06-09 2021-12-14 Beijing E-Town Semiconductor Technology Co., Ltd Plasma strip tool with uniformity control
CN114521284B (zh) 2020-08-28 2024-08-09 北京屹唐半导体科技股份有限公司 具有可移动插入件的等离子体剥离工具

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001007083A (ja) * 1999-06-18 2001-01-12 Sony Corp プラズマ処理装置及び方法
EP1162646A3 (en) * 2000-06-06 2004-10-13 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
JP2005531125A (ja) * 2001-10-22 2005-10-13 ユナクシス・ユーエスエイ・インコーポレーテッド パルス化プラズマを使用したフォトマスク基板のエッチングのための方法及び装置
US20030092278A1 (en) * 2001-11-13 2003-05-15 Fink Steven T. Plasma baffle assembly
JP2004079465A (ja) * 2002-08-22 2004-03-11 Shimadzu Corp プラズマ生成装置およびプラズマ処理装置
JP3712125B2 (ja) * 2003-02-03 2005-11-02 東京応化工業株式会社 プラズマ処理装置
GB0323001D0 (en) * 2003-10-01 2003-11-05 Oxford Instr Plasma Technology Apparatus and method for plasma treating a substrate
JP4459877B2 (ja) 2004-08-12 2010-04-28 住友精密工業株式会社 エッチング方法及びエッチング装置
JP4578893B2 (ja) 2004-08-20 2010-11-10 住友精密工業株式会社 シリコン材のプラズマエッチング方法及びプラズマエッチング装置
KR100683174B1 (ko) * 2005-06-17 2007-02-15 삼성전자주식회사 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템

Also Published As

Publication number Publication date
EP2416351A4 (en) 2015-08-12
EP2416351B1 (en) 2019-08-07
JP2010238847A (ja) 2010-10-21
CN102301457A (zh) 2011-12-28
JP4977730B2 (ja) 2012-07-18
EP2416351A1 (en) 2012-02-08
WO2010113358A1 (ja) 2010-10-07
TW201036061A (en) 2010-10-01
TWI476829B (zh) 2015-03-11
US20120006490A1 (en) 2012-01-12
CN102301457B (zh) 2013-09-25

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