TWI476527B - 厚膜光阻 - Google Patents

厚膜光阻 Download PDF

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Publication number
TWI476527B
TWI476527B TW097130707A TW97130707A TWI476527B TW I476527 B TWI476527 B TW I476527B TW 097130707 A TW097130707 A TW 097130707A TW 97130707 A TW97130707 A TW 97130707A TW I476527 B TWI476527 B TW I476527B
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TW
Taiwan
Prior art keywords
bis
hydroxyphenyl
methyl
phenyl
hydroxy
Prior art date
Application number
TW097130707A
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English (en)
Chinese (zh)
Other versions
TW200916957A (en
Inventor
陶凱 米哈達Ａ
邦尼斯可 瑪格麗特
Original Assignee
Ａｚ電子材料美國股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ａｚ電子材料美國股份有限公司 filed Critical Ａｚ電子材料美國股份有限公司
Publication of TW200916957A publication Critical patent/TW200916957A/zh
Application granted granted Critical
Publication of TWI476527B publication Critical patent/TWI476527B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/0275—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with dithiol or polysulfide compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Graft Or Block Polymers (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
TW097130707A 2007-09-25 2008-08-12 厚膜光阻 TWI476527B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/860,675 US8715918B2 (en) 2007-09-25 2007-09-25 Thick film resists

Publications (2)

Publication Number Publication Date
TW200916957A TW200916957A (en) 2009-04-16
TWI476527B true TWI476527B (zh) 2015-03-11

Family

ID=40289141

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097130707A TWI476527B (zh) 2007-09-25 2008-08-12 厚膜光阻

Country Status (7)

Country Link
US (1) US8715918B2 (https=)
EP (1) EP2203783B1 (https=)
JP (1) JP5412690B2 (https=)
KR (1) KR101505482B1 (https=)
CN (1) CN101809502B (https=)
TW (1) TWI476527B (https=)
WO (1) WO2009040661A2 (https=)

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JP4893270B2 (ja) * 2006-11-29 2012-03-07 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US8989107B2 (en) 2009-04-30 2015-03-24 Qualcomm Incorporated Activation deactivation of secondary UL carrier in DC HSUPA
JP5783142B2 (ja) * 2011-07-25 2015-09-24 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
KR20130023560A (ko) * 2011-08-29 2013-03-08 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 미세 패턴의 형성 방법
JP2013079230A (ja) 2011-09-23 2013-05-02 Rohm & Haas Electronic Materials Llc カリックスアレーンおよびこれを含むフォトレジスト組成物
JP6136355B2 (ja) * 2012-02-27 2017-05-31 住友化学株式会社 レジストパターンの製造方法
US9012126B2 (en) * 2012-06-15 2015-04-21 Az Electronic Materials (Luxembourg) S.A.R.L. Positive photosensitive material
JP6287466B2 (ja) * 2013-04-08 2018-03-07 Jsr株式会社 レジスト組成物及びレジストパターン形成方法
US9291909B2 (en) * 2013-05-17 2016-03-22 Az Electronic Materials (Luxembourg) S.A.R.L. Composition comprising a polymeric thermal acid generator and processes thereof
JP6292059B2 (ja) * 2013-08-13 2018-03-14 Jsr株式会社 基板の加工方法
US10047185B2 (en) * 2014-03-20 2018-08-14 Dic Corporation Novolac-type phenolic hydroxyl group-containing resin, production method therefor, curable composition, composition for resist, and color resist
KR102261808B1 (ko) * 2016-08-09 2021-06-07 리지필드 액퀴지션 환경적으로 안정한 후막성 화학증폭형 레지스트
TWI763715B (zh) * 2016-10-07 2022-05-11 日商迪愛生股份有限公司 含酚性羥基之樹脂及抗蝕劑材料
TWI816671B (zh) * 2017-04-25 2023-10-01 德商馬克專利公司 用於產生底切圖樣輪廓之負型光阻調配物以及使光阻組合物成像之方法和用於使基板上之圖樣化光阻劑金屬化之剝離方法
KR102230622B1 (ko) * 2017-11-24 2021-03-22 주식회사 엘지화학 포토레지스트 조성물 및 이를 이용한 포토레지스트 필름
CN108303851B (zh) * 2018-01-05 2019-09-10 湖北固润科技股份有限公司 包含聚对羟基苯乙烯类氧杂环丁烷树脂作为成膜树脂的光刻胶组合物
CN118377192A (zh) 2018-05-24 2024-07-23 默克专利股份有限公司 基于酚醛清漆/dnq的化学增幅型光致抗蚀剂
JP7475111B2 (ja) * 2018-11-14 2024-04-26 東京応化工業株式会社 レジストパターン形成方法、レジスト組成物及びその製造方法
US20200356001A1 (en) * 2019-05-10 2020-11-12 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods of forming resist patterns with such compositions
US20210108065A1 (en) * 2019-10-15 2021-04-15 Rohm And Haas Electronic Materials Llc Polymers and photoresist compositions
JP7539466B2 (ja) * 2019-11-19 2024-08-23 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング Ｐａｇ不含ポジ型化学増幅レジスト組成物及びそれの使用法
US20220365432A1 (en) * 2019-11-25 2022-11-17 Merck Patent Gmbh Chemically amplified photoresist
CN121079290A (zh) 2023-04-27 2025-12-05 默克专利股份有限公司 光活性化合物

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Also Published As

Publication number Publication date
JP5412690B2 (ja) 2014-02-12
US8715918B2 (en) 2014-05-06
WO2009040661A2 (en) 2009-04-02
CN101809502B (zh) 2014-01-08
WO2009040661A3 (en) 2009-06-04
KR20100082843A (ko) 2010-07-20
CN101809502A (zh) 2010-08-18
JP2011501815A (ja) 2011-01-13
EP2203783B1 (en) 2019-11-13
TW200916957A (en) 2009-04-16
US20090081589A1 (en) 2009-03-26
EP2203783A2 (en) 2010-07-07
KR101505482B1 (ko) 2015-03-25

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