CN101809502B - 厚膜抗蚀剂 - Google Patents

厚膜抗蚀剂 Download PDF

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Publication number
CN101809502B
CN101809502B CN200880108713.2A CN200880108713A CN101809502B CN 101809502 B CN101809502 B CN 101809502B CN 200880108713 A CN200880108713 A CN 200880108713A CN 101809502 B CN101809502 B CN 101809502B
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CN
China
Prior art keywords
vinyl ether
bis
solution
hydroxyphenyl
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200880108713.2A
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English (en)
Chinese (zh)
Other versions
CN101809502A (zh
Inventor
M·A·托西
M·鲍内斯库
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
AZ Electronic Materials USA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials USA Corp
Publication of CN101809502A publication Critical patent/CN101809502A/zh
Application granted granted Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/0275—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with dithiol or polysulfide compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Graft Or Block Polymers (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
CN200880108713.2A 2007-09-25 2008-09-24 厚膜抗蚀剂 Active CN101809502B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/860,675 US8715918B2 (en) 2007-09-25 2007-09-25 Thick film resists
US11/860,675 2007-09-25
PCT/IB2008/002593 WO2009040661A2 (en) 2007-09-25 2008-09-24 Thick film resists

Publications (2)

Publication Number Publication Date
CN101809502A CN101809502A (zh) 2010-08-18
CN101809502B true CN101809502B (zh) 2014-01-08

Family

ID=40289141

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880108713.2A Active CN101809502B (zh) 2007-09-25 2008-09-24 厚膜抗蚀剂

Country Status (7)

Country Link
US (1) US8715918B2 (https=)
EP (1) EP2203783B1 (https=)
JP (1) JP5412690B2 (https=)
KR (1) KR101505482B1 (https=)
CN (1) CN101809502B (https=)
TW (1) TWI476527B (https=)
WO (1) WO2009040661A2 (https=)

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US8989107B2 (en) 2009-04-30 2015-03-24 Qualcomm Incorporated Activation deactivation of secondary UL carrier in DC HSUPA
JP5783142B2 (ja) * 2011-07-25 2015-09-24 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
KR20130023560A (ko) * 2011-08-29 2013-03-08 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 미세 패턴의 형성 방법
JP2013079230A (ja) 2011-09-23 2013-05-02 Rohm & Haas Electronic Materials Llc カリックスアレーンおよびこれを含むフォトレジスト組成物
JP6136355B2 (ja) * 2012-02-27 2017-05-31 住友化学株式会社 レジストパターンの製造方法
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US9291909B2 (en) * 2013-05-17 2016-03-22 Az Electronic Materials (Luxembourg) S.A.R.L. Composition comprising a polymeric thermal acid generator and processes thereof
JP6292059B2 (ja) * 2013-08-13 2018-03-14 Jsr株式会社 基板の加工方法
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KR102261808B1 (ko) * 2016-08-09 2021-06-07 리지필드 액퀴지션 환경적으로 안정한 후막성 화학증폭형 레지스트
TWI763715B (zh) * 2016-10-07 2022-05-11 日商迪愛生股份有限公司 含酚性羥基之樹脂及抗蝕劑材料
TWI816671B (zh) * 2017-04-25 2023-10-01 德商馬克專利公司 用於產生底切圖樣輪廓之負型光阻調配物以及使光阻組合物成像之方法和用於使基板上之圖樣化光阻劑金屬化之剝離方法
KR102230622B1 (ko) * 2017-11-24 2021-03-22 주식회사 엘지화학 포토레지스트 조성물 및 이를 이용한 포토레지스트 필름
CN108303851B (zh) * 2018-01-05 2019-09-10 湖北固润科技股份有限公司 包含聚对羟基苯乙烯类氧杂环丁烷树脂作为成膜树脂的光刻胶组合物
CN118377192A (zh) 2018-05-24 2024-07-23 默克专利股份有限公司 基于酚醛清漆/dnq的化学增幅型光致抗蚀剂
JP7475111B2 (ja) * 2018-11-14 2024-04-26 東京応化工業株式会社 レジストパターン形成方法、レジスト組成物及びその製造方法
US20200356001A1 (en) * 2019-05-10 2020-11-12 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods of forming resist patterns with such compositions
US20210108065A1 (en) * 2019-10-15 2021-04-15 Rohm And Haas Electronic Materials Llc Polymers and photoresist compositions
JP7539466B2 (ja) * 2019-11-19 2024-08-23 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング Ｐａｇ不含ポジ型化学増幅レジスト組成物及びそれの使用法
US20220365432A1 (en) * 2019-11-25 2022-11-17 Merck Patent Gmbh Chemically amplified photoresist
CN121079290A (zh) 2023-04-27 2025-12-05 默克专利股份有限公司 光活性化合物

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Also Published As

Publication number Publication date
JP5412690B2 (ja) 2014-02-12
US8715918B2 (en) 2014-05-06
WO2009040661A2 (en) 2009-04-02
WO2009040661A3 (en) 2009-06-04
KR20100082843A (ko) 2010-07-20
CN101809502A (zh) 2010-08-18
JP2011501815A (ja) 2011-01-13
EP2203783B1 (en) 2019-11-13
TWI476527B (zh) 2015-03-11
TW200916957A (en) 2009-04-16
US20090081589A1 (en) 2009-03-26
EP2203783A2 (en) 2010-07-07
KR101505482B1 (ko) 2015-03-25

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