TWI475621B - 晶片安裝技術 - Google Patents

晶片安裝技術 Download PDF

Info

Publication number
TWI475621B
TWI475621B TW096143013A TW96143013A TWI475621B TW I475621 B TWI475621 B TW I475621B TW 096143013 A TW096143013 A TW 096143013A TW 96143013 A TW96143013 A TW 96143013A TW I475621 B TWI475621 B TW I475621B
Authority
TW
Taiwan
Prior art keywords
wafer
microns
soldering elements
buffer layers
layer
Prior art date
Application number
TW096143013A
Other languages
English (en)
Chinese (zh)
Other versions
TW200832577A (en
Inventor
塞門Ｊ. 史黛西
Original Assignee
劍橋矽晶片無線電有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 劍橋矽晶片無線電有限公司 filed Critical 劍橋矽晶片無線電有限公司
Publication of TW200832577A publication Critical patent/TW200832577A/zh
Application granted granted Critical
Publication of TWI475621B publication Critical patent/TWI475621B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/024—Material of the insulating layers therebetween
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141—Disposition
    • H01L2224/1412—Layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/206—Length ranges
    • H01L2924/2064—Length ranges larger or equal to 1 micron less than 100 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/206—Length ranges
    • H01L2924/20641—Length ranges larger or equal to 100 microns less than 200 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/206—Length ranges
    • H01L2924/20642—Length ranges larger or equal to 200 microns less than 300 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/206—Length ranges
    • H01L2924/20643—Length ranges larger or equal to 300 microns less than 400 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/206—Length ranges
    • H01L2924/20644—Length ranges larger or equal to 400 microns less than 500 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/206—Length ranges
    • H01L2924/20645—Length ranges larger or equal to 500 microns less than 600 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
TW096143013A 2006-12-13 2007-11-14 晶片安裝技術 TWI475621B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0624888A GB2444775B (en) 2006-12-13 2006-12-13 Chip mounting

Publications (2)

Publication Number Publication Date
TW200832577A TW200832577A (en) 2008-08-01
TWI475621B true TWI475621B (zh) 2015-03-01

Family

ID=37712074

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096143013A TWI475621B (zh) 2006-12-13 2007-11-14 晶片安裝技術

Country Status (5)

Country Link
US (2) US9177885B2 (enExample)
JP (2) JP5623080B2 (enExample)
GB (1) GB2444775B (enExample)
TW (1) TWI475621B (enExample)
WO (1) WO2008071905A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2444775B (en) * 2006-12-13 2011-06-08 Cambridge Silicon Radio Ltd Chip mounting
GB2482894B (en) * 2010-08-18 2014-11-12 Cambridge Silicon Radio Ltd Interconnection structure
US9935038B2 (en) 2012-04-11 2018-04-03 Taiwan Semiconductor Manufacturing Company Semiconductor device packages and methods
US11189538B2 (en) * 2018-09-28 2021-11-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with polyimide packaging and manufacturing method

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216290A (ja) * 1999-01-26 2000-08-04 Hitachi Cable Ltd 半導体パッケ―ジ
JP2000323628A (ja) * 1999-05-10 2000-11-24 Hitachi Ltd 半導体装置とその製造方法、およびこれを用いた電子機器
US6277669B1 (en) * 1999-09-15 2001-08-21 Industrial Technology Research Institute Wafer level packaging method and packages formed
JP2001257282A (ja) * 2000-03-09 2001-09-21 Hitachi Chem Co Ltd 半導体装置の製造方法及び半導体装置
US6462426B1 (en) * 2000-12-14 2002-10-08 National Semiconductor Corporation Barrier pad for wafer level chip scale packages
JP2004214561A (ja) * 2003-01-08 2004-07-29 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP2005039260A (ja) * 2003-07-01 2005-02-10 Nec Corp 応力緩和構造とその形成方法、応力緩和シートとその製造方法、及び半導体装置並びに電子機器
JP2005191604A (ja) * 1997-01-17 2005-07-14 Seiko Epson Corp 半導体装置及びその製造方法
JP2005317685A (ja) * 2004-04-28 2005-11-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US20050258539A1 (en) * 2004-05-20 2005-11-24 Nec Electronics Corporation Semiconductor device
WO2006057360A1 (ja) * 2004-11-25 2006-06-01 Nec Corporation 半導体装置及びその製造方法、配線基板及びその製造方法、半導体パッケージ並びに電子機器
EP1677585A1 (en) * 2004-01-30 2006-07-05 Ibiden Co., Ltd. Multilayer printed wiring board and method for manufacturing same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480636B (en) 1996-12-04 2002-03-21 Seiko Epson Corp Electronic component and semiconductor device, method for manufacturing and mounting thereof, and circuit board and electronic equipment
TW448524B (en) 1997-01-17 2001-08-01 Seiko Epson Corp Electronic component, semiconductor device, manufacturing method therefor, circuit board and electronic equipment
JP3795628B2 (ja) * 1997-05-16 2006-07-12 シチズン時計株式会社 半導体チップを搭載する配線基板の製造方法
JP3414388B2 (ja) * 2000-06-12 2003-06-09 株式会社日立製作所 電子機器
JP3640876B2 (ja) * 2000-09-19 2005-04-20 株式会社ルネサステクノロジ 半導体装置及び半導体装置の実装構造体
TW577152B (en) * 2000-12-18 2004-02-21 Hitachi Ltd Semiconductor integrated circuit device
TW574752B (en) * 2000-12-25 2004-02-01 Hitachi Ltd Semiconductor module
US6518675B2 (en) * 2000-12-29 2003-02-11 Samsung Electronics Co., Ltd. Wafer level package and method for manufacturing the same
US6433427B1 (en) 2001-01-16 2002-08-13 Industrial Technology Research Institute Wafer level package incorporating dual stress buffer layers for I/O redistribution and method for fabrication
JP2003020404A (ja) * 2001-07-10 2003-01-24 Hitachi Ltd 耐熱性低弾性率材およびそれを用いた装置
TW517360B (en) * 2001-12-19 2003-01-11 Ind Tech Res Inst Enhanced type wafer level package structure and its manufacture method
US6805974B2 (en) * 2002-02-15 2004-10-19 International Business Machines Corporation Lead-free tin-silver-copper alloy solder composition
JP2003298196A (ja) * 2002-04-03 2003-10-17 Japan Gore Tex Inc プリント配線板用誘電体フィルム、多層プリント基板および半導体装置
US6940177B2 (en) 2002-05-16 2005-09-06 Dow Corning Corporation Semiconductor package and method of preparing same
US20040089470A1 (en) * 2002-11-12 2004-05-13 Nec Corporation Printed circuit board, semiconductor package, base insulating film, and manufacturing method for interconnect substrate
KR100548581B1 (ko) * 2004-07-22 2006-02-02 주식회사 하이닉스반도체 웨이퍼 레벨 칩 스케일 패키지
JP4471213B2 (ja) * 2004-12-28 2010-06-02 Ｏｋｉセミコンダクタ株式会社 半導体装置およびその製造方法
JP4739198B2 (ja) * 2005-01-19 2011-08-03 新日本無線株式会社 半導体装置の製造方法
US7361990B2 (en) * 2005-03-17 2008-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing cracking of high-lead or lead-free bumps by matching sizes of contact pads and bump pads
GB2444775B (en) 2006-12-13 2011-06-08 Cambridge Silicon Radio Ltd Chip mounting

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191604A (ja) * 1997-01-17 2005-07-14 Seiko Epson Corp 半導体装置及びその製造方法
JP2000216290A (ja) * 1999-01-26 2000-08-04 Hitachi Cable Ltd 半導体パッケ―ジ
JP2000323628A (ja) * 1999-05-10 2000-11-24 Hitachi Ltd 半導体装置とその製造方法、およびこれを用いた電子機器
US6277669B1 (en) * 1999-09-15 2001-08-21 Industrial Technology Research Institute Wafer level packaging method and packages formed
JP2001257282A (ja) * 2000-03-09 2001-09-21 Hitachi Chem Co Ltd 半導体装置の製造方法及び半導体装置
US6462426B1 (en) * 2000-12-14 2002-10-08 National Semiconductor Corporation Barrier pad for wafer level chip scale packages
JP2004214561A (ja) * 2003-01-08 2004-07-29 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP2005039260A (ja) * 2003-07-01 2005-02-10 Nec Corp 応力緩和構造とその形成方法、応力緩和シートとその製造方法、及び半導体装置並びに電子機器
EP1677585A1 (en) * 2004-01-30 2006-07-05 Ibiden Co., Ltd. Multilayer printed wiring board and method for manufacturing same
JP2005317685A (ja) * 2004-04-28 2005-11-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US20050258539A1 (en) * 2004-05-20 2005-11-24 Nec Electronics Corporation Semiconductor device
WO2006057360A1 (ja) * 2004-11-25 2006-06-01 Nec Corporation 半導体装置及びその製造方法、配線基板及びその製造方法、半導体パッケージ並びに電子機器

Also Published As

Publication number Publication date
JP5806286B2 (ja) 2015-11-10
JP2010514148A (ja) 2010-04-30
TW200832577A (en) 2008-08-01
US9177885B2 (en) 2015-11-03
US20100013093A1 (en) 2010-01-21
WO2008071905B1 (en) 2008-08-21
GB2444775B (en) 2011-06-08
US20160086907A1 (en) 2016-03-24
JP2014112694A (ja) 2014-06-19
JP5623080B2 (ja) 2014-11-12
US9659894B2 (en) 2017-05-23
WO2008071905A1 (en) 2008-06-19
GB2444775A (en) 2008-06-18
GB0624888D0 (en) 2007-01-24

Similar Documents

Publication Publication Date Title
US8350385B2 (en) Reduced bottom roughness of stress buffering element of a semiconductor component
US8492896B2 (en) Semiconductor apparatus and semiconductor apparatus unit
JP2004055628A (ja) ウエハレベルの半導体装置及びその作製方法
US20100224987A1 (en) Stress buffering package for a semiconductor component
US20150228594A1 (en) Via under the interconnect structures for semiconductor devices
JP2001085560A (ja) 半導体装置およびその製造方法
TW201637138A (zh) 半導體元件的堆疊結構
KR101517598B1 (ko) 반도체 장치 및 그 제조 방법
CN101295686A (zh) 半导体装置及其制造方法
US9659894B2 (en) Chip mounting
US20080265410A1 (en) Wafer level package
US7952200B2 (en) Semiconductor device including a copolymer layer
JP2007158043A (ja) 半導体装置、半導体装置の製造方法、電子部品、回路基板及び電子機器
JP2002280486A (ja) 半導体パッケージ
JP3339472B2 (ja) 半導体装置及びその製造方法
JP2007053346A5 (enExample)
JP2010157544A (ja) 半導体装置及びその製造方法、並びに電子機器
JP2008047732A (ja) 半導体装置及びその製造方法
JP3943037B2 (ja) 半導体装置の製造方法
JP5036217B2 (ja) 半導体装置及びその製造方法
JP2004193167A (ja) 半導体パッケージおよび半導体パッケージの製造方法
JPH09246274A (ja) 半導体装置
JP2002329809A (ja) 半導体装置およびその製造方法
JP2008016782A (ja) 半導体装置及び半導体モジュール
JP2010192577A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees